ATE550781T1 - Verfahren zur herstellung einer rückseitenbeleuchtete festkörperbildvorrichtung - Google Patents
Verfahren zur herstellung einer rückseitenbeleuchtete festkörperbildvorrichtungInfo
- Publication number
- ATE550781T1 ATE550781T1 AT09160746T AT09160746T ATE550781T1 AT E550781 T1 ATE550781 T1 AT E550781T1 AT 09160746 T AT09160746 T AT 09160746T AT 09160746 T AT09160746 T AT 09160746T AT E550781 T1 ATE550781 T1 AT E550781T1
- Authority
- AT
- Austria
- Prior art keywords
- imaging device
- producing
- solid state
- state imaging
- illuminated solid
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title abstract 2
- 239000007787 solid Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008131699A JP2009283533A (ja) | 2008-05-20 | 2008-05-20 | 裏面照射型固体撮像素子用ウェーハ、その製造方法及び裏面照射型固体撮像素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE550781T1 true ATE550781T1 (de) | 2012-04-15 |
Family
ID=40886096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09160746T ATE550781T1 (de) | 2008-05-20 | 2009-05-20 | Verfahren zur herstellung einer rückseitenbeleuchtete festkörperbildvorrichtung |
Country Status (6)
Country | Link |
---|---|
US (2) | US20090289283A1 (de) |
EP (1) | EP2124251B1 (de) |
JP (1) | JP2009283533A (de) |
KR (2) | KR20090121246A (de) |
AT (1) | ATE550781T1 (de) |
TW (1) | TW201001690A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090242939A1 (en) * | 2008-03-25 | 2009-10-01 | Sumco Corporation | Wafer for backside illumination type solid imaging device, production method thereof and backside illumination solid imaging device |
US9490128B2 (en) | 2012-08-27 | 2016-11-08 | Ultratech, Inc. | Non-melt thin-wafer laser thermal annealing methods |
US10083843B2 (en) | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08321509A (ja) * | 1995-05-24 | 1996-12-03 | Sony Corp | 半導体装置と、半導体装置およびその半導体基板の製法 |
JPH11204771A (ja) * | 1998-01-07 | 1999-07-30 | Sony Corp | 半導体基板の製造方法及び固体撮像装置の製造方法 |
JP2002353434A (ja) * | 2001-05-22 | 2002-12-06 | Sony Corp | 固体撮像装置の製造方法 |
JP4970724B2 (ja) * | 2002-07-17 | 2012-07-11 | 株式会社Sumco | 高抵抗シリコンウエーハの製造方法 |
CN100461349C (zh) * | 2003-10-21 | 2009-02-11 | 株式会社上睦可 | 高电阻硅晶片的制造方法以及外延晶片及soi晶片的制造方法 |
JP4211696B2 (ja) * | 2004-06-30 | 2009-01-21 | ソニー株式会社 | 固体撮像装置の製造方法 |
KR100632463B1 (ko) * | 2005-02-07 | 2006-10-11 | 삼성전자주식회사 | 에피택셜 반도체 기판의 제조 방법과 이를 이용한 이미지센서의 제조 방법, 에피택셜 반도체 기판 및 이를 이용한이미지 센서 |
JP4940667B2 (ja) | 2005-06-02 | 2012-05-30 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
US8049293B2 (en) * | 2005-03-07 | 2011-11-01 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
KR100654354B1 (ko) * | 2005-07-25 | 2006-12-08 | 삼성전자주식회사 | 게더링 기능을 가지는 저결함 에피택셜 반도체 기판, 이를이용한 이미지 센서 및 이의 제조 방법 |
JP2007059755A (ja) | 2005-08-26 | 2007-03-08 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2007095951A (ja) * | 2005-09-28 | 2007-04-12 | Denso Corp | 半導体基板およびその製造方法 |
EP1833100A2 (de) * | 2006-03-06 | 2007-09-12 | Matsushita Electric Industrial Co., Ltd. | Vorrichtung zur Lichterkennung und Herstellungsverfahren dafür |
JP5315596B2 (ja) * | 2006-07-24 | 2013-10-16 | 株式会社Sumco | 貼合せsoiウェーハの製造方法 |
EP2061082B1 (de) * | 2006-09-07 | 2015-07-08 | Sumco Corporation | Herstellungsverfahren für ein halbleitersubstrat für festkörperbildgebungsvorrichtung |
JP4816603B2 (ja) * | 2007-09-10 | 2011-11-16 | ソニー株式会社 | 固体撮像素子の製造方法 |
US8212328B2 (en) * | 2007-12-05 | 2012-07-03 | Intellectual Ventures Ii Llc | Backside illuminated image sensor |
US20090242939A1 (en) * | 2008-03-25 | 2009-10-01 | Sumco Corporation | Wafer for backside illumination type solid imaging device, production method thereof and backside illumination solid imaging device |
-
2008
- 2008-05-20 JP JP2008131699A patent/JP2009283533A/ja active Pending
-
2009
- 2009-05-20 EP EP09160746A patent/EP2124251B1/de not_active Not-in-force
- 2009-05-20 TW TW098116781A patent/TW201001690A/zh unknown
- 2009-05-20 US US12/469,505 patent/US20090289283A1/en not_active Abandoned
- 2009-05-20 KR KR1020090044019A patent/KR20090121246A/ko not_active IP Right Cessation
- 2009-05-20 AT AT09160746T patent/ATE550781T1/de active
-
2012
- 2012-06-28 KR KR1020120070207A patent/KR101176333B1/ko not_active IP Right Cessation
- 2012-08-13 US US13/584,566 patent/US20120329204A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2009283533A (ja) | 2009-12-03 |
US20120329204A1 (en) | 2012-12-27 |
KR20120081064A (ko) | 2012-07-18 |
EP2124251A1 (de) | 2009-11-25 |
KR20090121246A (ko) | 2009-11-25 |
EP2124251B1 (de) | 2012-03-21 |
TW201001690A (en) | 2010-01-01 |
KR101176333B1 (ko) | 2012-08-22 |
US20090289283A1 (en) | 2009-11-26 |
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