ATE541316T1 - Flash- und rom-speicher - Google Patents

Flash- und rom-speicher

Info

Publication number
ATE541316T1
ATE541316T1 AT05807812T AT05807812T ATE541316T1 AT E541316 T1 ATE541316 T1 AT E541316T1 AT 05807812 T AT05807812 T AT 05807812T AT 05807812 T AT05807812 T AT 05807812T AT E541316 T1 ATE541316 T1 AT E541316T1
Authority
AT
Austria
Prior art keywords
memory cell
layout
flash memory
transistor
rom memory
Prior art date
Application number
AT05807812T
Other languages
English (en)
Inventor
Rob Verhaar
Guido Dormans
Maurits Storms
Roger Cuppens
Frans List
Robert Beurze
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE541316T1 publication Critical patent/ATE541316T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/34—Source electrode or drain electrode programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
AT05807812T 2004-11-15 2005-11-08 Flash- und rom-speicher ATE541316T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04105780 2004-11-15
PCT/IB2005/053672 WO2006051487A1 (en) 2004-11-15 2005-11-08 Flash- and rom- memory

Publications (1)

Publication Number Publication Date
ATE541316T1 true ATE541316T1 (de) 2012-01-15

Family

ID=35945243

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05807812T ATE541316T1 (de) 2004-11-15 2005-11-08 Flash- und rom-speicher

Country Status (8)

Country Link
US (1) US8576603B2 (de)
EP (1) EP1815518B1 (de)
JP (1) JP4950898B2 (de)
KR (1) KR101160720B1 (de)
CN (1) CN101057331B (de)
AT (1) ATE541316T1 (de)
TW (1) TW200633190A (de)
WO (1) WO2006051487A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003242901A1 (en) * 2002-06-20 2004-01-06 Koninklijke Philips Electronics N.V. Conductive spacers extended floating gates
US7982288B2 (en) 2008-10-17 2011-07-19 United Microelectronics Corp. Semiconductor device and method of fabricating the same
TWI414055B (zh) * 2008-10-21 2013-11-01 United Microelectronics Corp 半導體元件及其製造方法
CN102544074B (zh) * 2012-02-21 2013-12-18 无锡来燕微电子有限公司 与cmos逻辑工艺兼容的非挥发性记忆体及其制备方法
US20140241055A1 (en) * 2013-02-25 2014-08-28 Infineon Technologies Ag Method and System for Reducing the Complexity of Electronically Programmable Nonvolatile Memory
US20150048875A1 (en) * 2013-08-19 2015-02-19 Ememory Technology Inc. High voltage power control system
US9437603B2 (en) 2014-10-10 2016-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wing-type projection between neighboring access transistors in memory devices
US20160147594A1 (en) * 2014-11-26 2016-05-26 Qualcomm Technologies International, Ltd. Method and apparatus for preventing and managing corruption of flash memory contents
US9773792B1 (en) * 2016-03-25 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programming cell
US10658364B2 (en) * 2018-02-28 2020-05-19 Stmicroelectronics S.R.L. Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof
CN111129017B (zh) * 2019-12-26 2022-06-07 华虹半导体(无锡)有限公司 Otp存储器及其制造方法

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JPS6260255A (ja) 1985-09-09 1987-03-16 Nec Corp 半導体記憶装置
JPS63167754U (de) * 1987-04-21 1988-11-01
JP2540600B2 (ja) * 1988-06-09 1996-10-02 株式会社日立製作所 半導体集積回路装置の形成方法
JP2535220B2 (ja) * 1989-04-03 1996-09-18 三菱電機株式会社 ワンチップマイクロコンピュ―タの製造方法
JPH02310683A (ja) * 1989-05-26 1990-12-26 Hitachi Ltd 半導体集積回路装置の形成方法
JP2775066B2 (ja) * 1989-08-26 1998-07-09 株式会社日立製作所 半導体集積回路装置の製造方法
JP3044073B2 (ja) * 1991-03-05 2000-05-22 株式会社日立製作所 半導体集積回路装置及びその形成方法
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EP0890985B1 (de) 1997-07-08 2005-11-02 STMicroelectronics S.r.l. Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen
EP0957521A1 (de) 1998-05-11 1999-11-17 STMicroelectronics S.r.l. Speicherzellenanordnung hergestellt durch ein Self-Aligned-Source-Verfahren (SAS), die Festwertspeicherzellen (ROM) aufweist, und deren Herstellungsverfahren
DE69833247D1 (de) * 1998-10-02 2006-04-06 St Microelectronics Srl Verfahren zur Herstellung eines Mehrpegel ROM Speichers in einem Doppelgate CMOS Prozess und entsprechende ROM Speicherzelle
JP2002133885A (ja) * 2000-10-30 2002-05-10 Toshiba Corp 不揮発性半導体記憶装置
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Also Published As

Publication number Publication date
CN101057331A (zh) 2007-10-17
WO2006051487A1 (en) 2006-05-18
EP1815518A1 (de) 2007-08-08
JP2008520093A (ja) 2008-06-12
KR20070084344A (ko) 2007-08-24
KR101160720B1 (ko) 2012-06-28
EP1815518B1 (de) 2012-01-11
TW200633190A (en) 2006-09-16
JP4950898B2 (ja) 2012-06-13
US20090296447A1 (en) 2009-12-03
US8576603B2 (en) 2013-11-05
CN101057331B (zh) 2010-06-16

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