ATE540906T1 - Gesinterter silicium-wafer - Google Patents

Gesinterter silicium-wafer

Info

Publication number
ATE540906T1
ATE540906T1 AT08777887T AT08777887T ATE540906T1 AT E540906 T1 ATE540906 T1 AT E540906T1 AT 08777887 T AT08777887 T AT 08777887T AT 08777887 T AT08777887 T AT 08777887T AT E540906 T1 ATE540906 T1 AT E540906T1
Authority
AT
Austria
Prior art keywords
silicon wafer
sintered silicon
average
sintered
20kgf
Prior art date
Application number
AT08777887T
Other languages
English (en)
Inventor
Ryo Suzuki
Hiroshi Takamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Application granted granted Critical
Publication of ATE540906T1 publication Critical patent/ATE540906T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/268—Monolayer with structurally defined element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
AT08777887T 2007-07-13 2008-07-04 Gesinterter silicium-wafer ATE540906T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007184756 2007-07-13
PCT/JP2008/062172 WO2009011233A1 (ja) 2007-07-13 2008-07-04 焼結シリコンウエハ

Publications (1)

Publication Number Publication Date
ATE540906T1 true ATE540906T1 (de) 2012-01-15

Family

ID=40259571

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08777887T ATE540906T1 (de) 2007-07-13 2008-07-04 Gesinterter silicium-wafer

Country Status (8)

Country Link
US (1) US20100330325A1 (de)
EP (1) EP2168934B1 (de)
JP (1) JP5432712B2 (de)
KR (1) KR101211983B1 (de)
CN (1) CN101687709B (de)
AT (1) ATE540906T1 (de)
TW (1) TWI489015B (de)
WO (1) WO2009011233A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2169707A4 (de) * 2007-07-13 2012-11-21 Jx Nippon Mining & Metals Corp Gesinterter silicium-wafer
JP5279828B2 (ja) * 2008-07-10 2013-09-04 Ｊｘ日鉱日石金属株式会社 ハイブリッドシリコンウエハ及びその製造方法
US8512868B2 (en) 2009-11-06 2013-08-20 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer
US8659022B2 (en) 2009-11-06 2014-02-25 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer
US8647747B2 (en) 2010-07-08 2014-02-11 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
US8252422B2 (en) 2010-07-08 2012-08-28 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
WO2012124596A1 (ja) 2011-03-15 2012-09-20 Jx日鉱日石金属株式会社 多結晶シリコンウエハ
US9982334B2 (en) 2012-02-01 2018-05-29 Jx Nippon Mining & Metals Corporation Polycrystalline silicon sputtering target
WO2013136922A1 (ja) 2012-03-12 2013-09-19 Jx日鉱日石金属株式会社 多結晶シリコンウエハ
JP6502399B2 (ja) 2017-02-06 2019-04-17 Ｊｘ金属株式会社 単結晶シリコンスパッタリングターゲット
JP6546953B2 (ja) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
CN115012027A (zh) * 2022-06-29 2022-09-06 山东大学 一种生长氮化铝单晶用可控粒径氮化铝原料的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
JP3342898B2 (ja) * 1991-11-26 2002-11-11 株式会社東芝 硅素焼結体およびこれを用いて形成したウェハ保持用ボード、スパッタリングターゲットおよびシリコンウェハ
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer
JP3511466B2 (ja) * 1998-05-22 2004-03-29 東芝セラミックス株式会社 半導体ウェーハ熱処理用部材およびこれを用いた治具
JP2003286023A (ja) * 2002-03-27 2003-10-07 Tdk Corp シリコン焼結体の製造方法およびシリコン焼結体
JP3819863B2 (ja) * 2003-03-25 2006-09-13 日鉱金属株式会社 シリコン焼結体及びその製造方法
JP4354721B2 (ja) * 2003-03-25 2009-10-28 日鉱金属株式会社 シリコン焼結体の製造方法
JP4238357B2 (ja) * 2003-08-19 2009-03-18 独立行政法人産業技術総合研究所 炭化珪素エピタキシャルウエハ、同ウエハの製造方法及び同ウエハ上に作製された半導体装置
CN100376039C (zh) * 2005-02-05 2008-03-19 江苏林洋新能源有限公司 高效晶体硅电池规模化制造方法
CN1941426A (zh) * 2005-09-26 2007-04-04 中芯国际集成电路制造(上海)有限公司 N－型硅片上制造太阳能电池的方法
CN1967881A (zh) * 2005-11-17 2007-05-23 上海太阳能科技有限公司 太阳电池硅表面生成多孔硅的方法
JP5279828B2 (ja) * 2008-07-10 2013-09-04 Ｊｘ日鉱日石金属株式会社 ハイブリッドシリコンウエハ及びその製造方法

Also Published As

Publication number Publication date
US20100330325A1 (en) 2010-12-30
TW200907119A (en) 2009-02-16
JPWO2009011233A1 (ja) 2010-09-16
KR101211983B1 (ko) 2012-12-13
CN101687709B (zh) 2013-02-13
EP2168934A1 (de) 2010-03-31
EP2168934B1 (de) 2012-01-11
CN101687709A (zh) 2010-03-31
KR20100022519A (ko) 2010-03-02
JP5432712B2 (ja) 2014-03-05
EP2168934A4 (de) 2010-08-04
WO2009011233A1 (ja) 2009-01-22
TWI489015B (zh) 2015-06-21

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