ATE540906T1 - Gesinterter silicium-wafer - Google Patents

Gesinterter silicium-wafer

Info

Publication number
ATE540906T1
ATE540906T1 AT08777887T AT08777887T ATE540906T1 AT E540906 T1 ATE540906 T1 AT E540906T1 AT 08777887 T AT08777887 T AT 08777887T AT 08777887 T AT08777887 T AT 08777887T AT E540906 T1 ATE540906 T1 AT E540906T1
Authority
AT
Austria
Prior art keywords
silicon wafer
sintered silicon
average
sintered
20kgf
Prior art date
Application number
AT08777887T
Other languages
English (en)
Inventor
Ryo Suzuki
Hiroshi Takamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Application granted granted Critical
Publication of ATE540906T1 publication Critical patent/ATE540906T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/268—Monolayer with structurally defined element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Silicon Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
  • Physical Vapour Deposition (AREA)
AT08777887T 2007-07-13 2008-07-04 Gesinterter silicium-wafer ATE540906T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007184756 2007-07-13
PCT/JP2008/062172 WO2009011233A1 (ja) 2007-07-13 2008-07-04 焼結シリコンウエハ

Publications (1)

Publication Number Publication Date
ATE540906T1 true ATE540906T1 (de) 2012-01-15

Family

ID=40259571

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08777887T ATE540906T1 (de) 2007-07-13 2008-07-04 Gesinterter silicium-wafer

Country Status (8)

Country Link
US (1) US20100330325A1 (de)
EP (1) EP2168934B1 (de)
JP (1) JP5432712B2 (de)
KR (1) KR101211983B1 (de)
CN (1) CN101687709B (de)
AT (1) ATE540906T1 (de)
TW (1) TWI489015B (de)
WO (1) WO2009011233A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101611469A (zh) * 2007-07-13 2009-12-23 日矿金属株式会社 烧结硅晶圆
EP2299474B1 (de) * 2008-07-10 2013-01-23 JX Nippon Mining & Metals Corporation Silizium-hybridwafer und herstellungsverfahren dafür
EP2497849A4 (de) 2009-11-06 2014-08-06 Jx Nippon Mining & Metals Corp Hybridsiliciumwafer
US8512868B2 (en) 2009-11-06 2013-08-20 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer
US8647747B2 (en) * 2010-07-08 2014-02-11 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
US8252422B2 (en) 2010-07-08 2012-08-28 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
KR101356303B1 (ko) 2011-03-15 2014-01-28 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 다결정 실리콘 웨이퍼
US9982334B2 (en) 2012-02-01 2018-05-29 Jx Nippon Mining & Metals Corporation Polycrystalline silicon sputtering target
US9053942B2 (en) 2012-03-12 2015-06-09 Jx Nippon Mining & Metals Corporation Polycrystalline silicon wafer
JP6502399B2 (ja) 2017-02-06 2019-04-17 Ｊｘ金属株式会社 単結晶シリコンスパッタリングターゲット
JP6546953B2 (ja) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
CN115012027A (zh) * 2022-06-29 2022-09-06 山东大学 一种生长氮化铝单晶用可控粒径氮化铝原料的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
JP3342898B2 (ja) * 1991-11-26 2002-11-11 株式会社東芝 硅素焼結体およびこれを用いて形成したウェハ保持用ボード、スパッタリングターゲットおよびシリコンウェハ
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer
JP3511466B2 (ja) * 1998-05-22 2004-03-29 東芝セラミックス株式会社 半導体ウェーハ熱処理用部材およびこれを用いた治具
JP2003286023A (ja) * 2002-03-27 2003-10-07 Tdk Corp シリコン焼結体の製造方法およびシリコン焼結体
JP3819863B2 (ja) * 2003-03-25 2006-09-13 日鉱金属株式会社 シリコン焼結体及びその製造方法
JP4354721B2 (ja) * 2003-03-25 2009-10-28 日鉱金属株式会社 シリコン焼結体の製造方法
JP4238357B2 (ja) * 2003-08-19 2009-03-18 独立行政法人産業技術総合研究所 炭化珪素エピタキシャルウエハ、同ウエハの製造方法及び同ウエハ上に作製された半導体装置
CN100376039C (zh) * 2005-02-05 2008-03-19 江苏林洋新能源有限公司 高效晶体硅电池规模化制造方法
CN1941426A (zh) * 2005-09-26 2007-04-04 中芯国际集成电路制造(上海)有限公司 N－型硅片上制造太阳能电池的方法
CN1967881A (zh) * 2005-11-17 2007-05-23 上海太阳能科技有限公司 太阳电池硅表面生成多孔硅的方法
EP2299474B1 (de) * 2008-07-10 2013-01-23 JX Nippon Mining & Metals Corporation Silizium-hybridwafer und herstellungsverfahren dafür

Also Published As

Publication number Publication date
EP2168934A1 (de) 2010-03-31
KR20100022519A (ko) 2010-03-02
KR101211983B1 (ko) 2012-12-13
TW200907119A (en) 2009-02-16
US20100330325A1 (en) 2010-12-30
TWI489015B (zh) 2015-06-21
EP2168934A4 (de) 2010-08-04
CN101687709B (zh) 2013-02-13
EP2168934B1 (de) 2012-01-11
WO2009011233A1 (ja) 2009-01-22
CN101687709A (zh) 2010-03-31
JPWO2009011233A1 (ja) 2010-09-16
JP5432712B2 (ja) 2014-03-05

Similar Documents

Publication Publication Date Title
ATE540906T1 (de) Gesinterter silicium-wafer
WO2009011235A1 (ja) 焼結シリコンウエハ
EP2610602A3 (de) Elektroaktiver Polymer-Drucksensor
ATE467107T1 (de) Kraftmesszelle
EP2505695A3 (de) Verfahren zur Herstellung von Gusssilicium aus Keimkristallen
EP1852688A3 (de) Mehrachsige Kraftsensorchip
EP1229314A3 (de) Flüssigkeitsstandanzeiger, mit einer abnehmbaren Hall-Effektanordnung
WO2009140441A3 (en) Piezoresistor height sensing cantilever
ATE510051T1 (de) Energieaktiver verbundfaden, verfahren zu seiner herstellung und artikel damit
WO2011073871A3 (en) Light emitting diode device with luminescent material
WO2002019944A3 (en) Flexible implant
EP3537129A3 (de) Dehnmesssreifen mit mechanisch entkoppltem temperatursensor
EP2023217A3 (de) Armbanduhrartige mobile Vorrichtung
WO2005092010A3 (en) Chemical mechanical polishing retaining ring
EP1887365A3 (de) Dreiachsige Mehrbereichs-Beschleunigungssensorvorrichtung
EP2384026A3 (de) Akustiksensor und Herstellungsverfahren dafür
EP2023109A3 (de) Lastsensor mit Halbleiterdehnungsmessstreifen
EP2043141A3 (de) Doppel-Gate-Transistorstruktur, die mit einem Kanal mit mehreren Zweigen ausgestattet ist
EP2283741A3 (de) Schliessvorrichtung
WO2005090988A3 (en) Mycobacterium tuberculosis infection diagnostic test
WO2010028373A3 (en) Methods for diagnosing cancer and determining the overall survival and disease-free survival of cancer patients
Hecht et al. Combining atomic force-fluorescence microscopy with a stretching device for analyzing mechanotransduction processes in living cells
EP1584871A3 (de) Einkristallartikeln mit gesteuerter Kristallorientierung
ATE431556T1 (de) Bestimmung von kurzkettiger srl- alkoholdehydrogenase (dhrs4) als biomarker für entzündungen und infektionen
EP1696470A3 (de) Haltevorrichtung und Verfahren zum Halten eines Wafers