WO2009011233A1 - 焼結シリコンウエハ - Google Patents

焼結シリコンウエハ Download PDF

Info

Publication number
WO2009011233A1
WO2009011233A1 PCT/JP2008/062172 JP2008062172W WO2009011233A1 WO 2009011233 A1 WO2009011233 A1 WO 2009011233A1 JP 2008062172 W JP2008062172 W JP 2008062172W WO 2009011233 A1 WO2009011233 A1 WO 2009011233A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafer
average
sintered
sintered silicon
20kgf
Prior art date
Application number
PCT/JP2008/062172
Other languages
English (en)
French (fr)
Inventor
Ryo Suzuki
Hiroshi Takamura
Original Assignee
Nippon Mining & Metals Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to CN200880023643.0A priority Critical patent/CN101687709B/zh
Priority to EP08777887A priority patent/EP2168934B1/en
Priority to JP2009523599A priority patent/JP5432712B2/ja
Priority to US12/668,239 priority patent/US20100330325A1/en
Priority to AT08777887T priority patent/ATE540906T1/de
Publication of WO2009011233A1 publication Critical patent/WO2009011233A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/268—Monolayer with structurally defined element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

 焼結シリコンウエハであって、その最大結晶粒径が２０μｍ以下、平均結晶粒径が１μｍ以上、１０μｍ以下である焼結シリコンウエハ及び直径が４００ｍｍ以上のシリコンウエハから複数の試験試料を採取し測定した以下の機械的特性を有する焼結シリコンウエハであって、３点曲げ法による抗折力の平均値が２０ｋｇｆ／ｍｍ２以上、５０ｋｇｆ／ｍｍ２以下、引張り強度の平均値が５ｋｇｆ／ｍｍ２以上、２０ｋｇｆ／ｍｍ２以下、ビッカース硬度の平均値がＨｖ８００以上、Ｈｖ１２００以下の機械的特性を有する焼結シリコンウエハ。大型の円盤状焼結シリコンウエハにおいても、一定の強度を備えた焼結体ウエハであり、単結晶シリコンの機械的物性に類似した焼結シリコンウエハを提供することにある。
PCT/JP2008/062172 2007-07-13 2008-07-04 焼結シリコンウエハ WO2009011233A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200880023643.0A CN101687709B (zh) 2007-07-13 2008-07-04 烧结硅晶片
EP08777887A EP2168934B1 (en) 2007-07-13 2008-07-04 Sintered silicon wafer
JP2009523599A JP5432712B2 (ja) 2007-07-13 2008-07-04 焼結シリコンウエハ
US12/668,239 US20100330325A1 (en) 2007-07-13 2008-07-04 Sintered Silicon Wafer
AT08777887T ATE540906T1 (de) 2007-07-13 2008-07-04 Gesinterter silicium-wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184756 2007-07-13
JP2007184756 2007-07-13

Publications (1)

Publication Number Publication Date
WO2009011233A1 true WO2009011233A1 (ja) 2009-01-22

Family

ID=40259571

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062172 WO2009011233A1 (ja) 2007-07-13 2008-07-04 焼結シリコンウエハ

Country Status (8)

Country Link
US (1) US20100330325A1 (ja)
EP (1) EP2168934B1 (ja)
JP (1) JP5432712B2 (ja)
KR (1) KR101211983B1 (ja)
CN (1) CN101687709B (ja)
AT (1) ATE540906T1 (ja)
TW (1) TWI489015B (ja)
WO (1) WO2009011233A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120009374A1 (en) * 2010-07-08 2012-01-12 Nippon Mining & Metals Co., Ltd. Hybrid Silicon Wafer and Method of Producing the Same
US8236428B2 (en) 2008-07-10 2012-08-07 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method for manufacturing same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4323562B2 (ja) * 2007-07-13 2009-09-02 日鉱金属株式会社 焼結シリコンウエハ
EP2497848A4 (en) 2009-11-06 2014-08-06 Jx Nippon Mining & Metals Corp HYBRID SILICON WAFER
EP2497849A4 (en) 2009-11-06 2014-08-06 Jx Nippon Mining & Metals Corp HYBRID SILICON WAFER
US8252422B2 (en) 2010-07-08 2012-08-28 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
US8987737B2 (en) 2011-03-15 2015-03-24 Jx Nippon Mining & Metals Corporation Polycrystalline silicon wafer
US9982334B2 (en) 2012-02-01 2018-05-29 Jx Nippon Mining & Metals Corporation Polycrystalline silicon sputtering target
JP5826915B2 (ja) 2012-03-12 2015-12-02 Jx日鉱日石金属株式会社 多結晶シリコンウエハ
JP6502399B2 (ja) 2017-02-06 2019-04-17 Ｊｘ金属株式会社 単結晶シリコンスパッタリングターゲット
JP6546953B2 (ja) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
CN115012027A (zh) * 2022-06-29 2022-09-06 山东大学 一种生长氮化铝单晶用可控粒径氮化铝原料的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340155A (ja) * 1998-05-22 1999-12-10 Toshiba Ceramics Co Ltd 半導体ウェーハ熱処理用部材およびこれを用いた治具
JP2003286023A (ja) * 2002-03-27 2003-10-07 Tdk Corp シリコン焼結体の製造方法およびシリコン焼結体
JP2004289065A (ja) * 2003-03-25 2004-10-14 Nikko Materials Co Ltd シリコン焼結体及びその製造方法
JP2004284929A (ja) * 2003-03-25 2004-10-14 Nikko Materials Co Ltd シリコン焼結体の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
JP3342898B2 (ja) * 1991-11-26 2002-11-11 株式会社東芝 硅素焼結体およびこれを用いて形成したウェハ保持用ボード、スパッタリングターゲットおよびシリコンウェハ
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer
JP4238357B2 (ja) * 2003-08-19 2009-03-18 独立行政法人産業技術総合研究所 炭化珪素エピタキシャルウエハ、同ウエハの製造方法及び同ウエハ上に作製された半導体装置
CN100376039C (zh) * 2005-02-05 2008-03-19 江苏林洋新能源有限公司 高效晶体硅电池规模化制造方法
CN1941426A (zh) * 2005-09-26 2007-04-04 中芯国际集成电路制造(上海)有限公司 N－型硅片上制造太阳能电池的方法
CN1967881A (zh) * 2005-11-17 2007-05-23 上海太阳能科技有限公司 太阳电池硅表面生成多孔硅的方法
US8236428B2 (en) * 2008-07-10 2012-08-07 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method for manufacturing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340155A (ja) * 1998-05-22 1999-12-10 Toshiba Ceramics Co Ltd 半導体ウェーハ熱処理用部材およびこれを用いた治具
JP2003286023A (ja) * 2002-03-27 2003-10-07 Tdk Corp シリコン焼結体の製造方法およびシリコン焼結体
JP2004289065A (ja) * 2003-03-25 2004-10-14 Nikko Materials Co Ltd シリコン焼結体及びその製造方法
JP2004284929A (ja) * 2003-03-25 2004-10-14 Nikko Materials Co Ltd シリコン焼結体の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8236428B2 (en) 2008-07-10 2012-08-07 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method for manufacturing same
US20120009374A1 (en) * 2010-07-08 2012-01-12 Nippon Mining & Metals Co., Ltd. Hybrid Silicon Wafer and Method of Producing the Same

Also Published As

Publication number Publication date
EP2168934A1 (en) 2010-03-31
EP2168934A4 (en) 2010-08-04
TWI489015B (zh) 2015-06-21
ATE540906T1 (de) 2012-01-15
JPWO2009011233A1 (ja) 2010-09-16
KR20100022519A (ko) 2010-03-02
JP5432712B2 (ja) 2014-03-05
TW200907119A (en) 2009-02-16
US20100330325A1 (en) 2010-12-30
CN101687709A (zh) 2010-03-31
CN101687709B (zh) 2013-02-13
EP2168934B1 (en) 2012-01-11
KR101211983B1 (ko) 2012-12-13

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