ATE523263T1 - Aufschleuder-schutzbeschichtungen für die nassätzverarbeitung mikroelektronischer substrate - Google Patents

Aufschleuder-schutzbeschichtungen für die nassätzverarbeitung mikroelektronischer substrate

Info

Publication number
ATE523263T1
ATE523263T1 AT05705442T AT05705442T ATE523263T1 AT E523263 T1 ATE523263 T1 AT E523263T1 AT 05705442 T AT05705442 T AT 05705442T AT 05705442 T AT05705442 T AT 05705442T AT E523263 T1 ATE523263 T1 AT E523263T1
Authority
AT
Austria
Prior art keywords
protective layer
wet etch
spin
protective coatings
etch processing
Prior art date
Application number
AT05705442T
Other languages
English (en)
Inventor
Chenghong Li
Kimberly Ruben
Tony Flaim
Original Assignee
Brewer Science Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brewer Science Inc filed Critical Brewer Science Inc
Application granted granted Critical
Publication of ATE523263T1 publication Critical patent/ATE523263T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02—Homopolymers or copolymers of hydrocarbons
    • C09D125/04—Homopolymers or copolymers of styrene
    • C09D125/08—Copolymers of styrene
    • C09D125/12—Copolymers of styrene with unsaturated nitriles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/355—Temporary coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
    • Y10T428/31544—Addition polymer is perhalogenated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31609—Particulate metal or metal compound-containing
    • Y10T428/31612—As silicone, silane or siloxane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31935—Ester, halide or nitrile of addition polymer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
AT05705442T 2004-01-16 2005-01-07 Aufschleuder-schutzbeschichtungen für die nassätzverarbeitung mikroelektronischer substrate ATE523263T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/759,448 US7316844B2 (en) 2004-01-16 2004-01-16 Spin-on protective coatings for wet-etch processing of microelectronic substrates
PCT/US2005/000786 WO2005072489A2 (en) 2004-01-16 2005-01-07 Spin-on protective coatings for wet-etch processing of microelectronic substrates

Publications (1)

Publication Number Publication Date
ATE523263T1 true ATE523263T1 (de) 2011-09-15

Family

ID=34749694

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05705442T ATE523263T1 (de) 2004-01-16 2005-01-07 Aufschleuder-schutzbeschichtungen für die nassätzverarbeitung mikroelektronischer substrate

Country Status (9)

Country Link
US (3) US7316844B2 (de)
EP (1) EP1715961B1 (de)
JP (1) JP5165247B2 (de)
KR (1) KR101189394B1 (de)
CN (1) CN100566852C (de)
AT (1) ATE523263T1 (de)
SG (1) SG152244A1 (de)
TW (1) TWI405263B (de)
WO (1) WO2005072489A2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316844B2 (en) 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
US7695890B2 (en) 2005-09-09 2010-04-13 Brewer Science Inc. Negative photoresist for silicon KOH etch without silicon nitride
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
US8192642B2 (en) * 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
TW200934865A (en) * 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
US8092628B2 (en) * 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
US8771927B2 (en) 2009-04-15 2014-07-08 Brewer Science Inc. Acid-etch resistant, protective coatings
EP2289843A1 (de) 2009-08-31 2011-03-02 University College Cork-National University of Ireland, Cork Mikronadelvorrichtung und Verfahren zu deren Herstellung
JP5800370B2 (ja) * 2009-09-16 2015-10-28 ブルーワー サイエンス アイ エヌシー． 背面処理中に前面側電気回路を保護するための耐傷性コーティング
KR101125427B1 (ko) * 2010-04-02 2012-03-26 에스케이텔레시스 주식회사 이동통신 단말기의 헤어라인 형성 방법 및 헤어라인이 형성된 이동통신 단말기
DE102010044133B4 (de) 2010-11-18 2016-03-03 Schott Ag Ätzverfahren zur Oberflächenstrukturierung und Ätzmaske
US8802482B2 (en) 2011-11-04 2014-08-12 International Business Machines Corporation Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer
TWI502031B (zh) 2012-03-01 2015-10-01 Eternal Materials Co Ltd 抗蝕刻組成物及其應用
US9531820B2 (en) * 2012-07-02 2016-12-27 Kt Corporation Contents providing scheme using identification code
US9557841B2 (en) 2015-01-22 2017-01-31 Eastman Kodak Company Devices with protected electrically-conductive metal grids
US9650716B2 (en) 2015-01-22 2017-05-16 Eastman Kodak Company Patterning continuous webs with protected electrically-conductive grids
US9516760B2 (en) * 2015-01-22 2016-12-06 Eastman Kodak Company Methods for providing electrically-conductive articles
US9545025B2 (en) 2015-01-22 2017-01-10 Eastman Kodak Company Electrically-conductive articles with protective polymeric coatings
US10410883B2 (en) * 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
CN109096430A (zh) * 2018-07-25 2018-12-28 嘉兴华雯化工有限公司 一种新型的反应性四元共聚物及其制备方法
EP4041845A4 (de) * 2019-10-09 2023-11-22 Entegris, Inc. Nassätzzusammensetzung und verfahren
WO2023028019A1 (en) 2021-08-25 2023-03-02 Corning Incorporated Textured glass-based articles
WO2023027932A1 (en) * 2021-08-25 2023-03-02 Corning Incorporated Textured glass-based articles
WO2023055653A1 (en) * 2021-09-30 2023-04-06 Entegris, Inc. Articles having removable coatings and related methods
KR102361960B1 (ko) * 2021-10-28 2022-02-14 제일씨앤피주식회사 인쇄판의 제조방법 및 이에 의해 제조된 인쇄판

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3398044A (en) * 1965-02-01 1968-08-20 Dow Corning Bonding of organic resins or rubbers to inorganic substances
NL130670C (de) * 1965-02-15
US3461027A (en) * 1966-02-01 1969-08-12 Dow Corning Bonding of thermoplastic polymer resins to silane-primed siliceous or metallic materials
US3585103A (en) * 1968-09-23 1971-06-15 Hercules Inc Priming composition comprising a coupling agent and a polyfunctional azide for bonding polymers to glass,metal and metal oxide substrates
US3826709A (en) * 1969-09-02 1974-07-30 Bethlehem Steel Corp Process for laminating phosphate coated steel with abs resin
US3843557A (en) * 1971-10-05 1974-10-22 Mennen Co Inc Microcapsules and method of making same
US3766189A (en) * 1972-10-05 1973-10-16 Sinclair Koppers Co Fire retardant latex containing chlorinated paraffin wax
JPS544070A (en) * 1977-06-13 1979-01-12 Hitachi Ltd Manufacture for semiconductor device
JPS5434769A (en) * 1977-08-24 1979-03-14 Fuji Electric Co Ltd Photoetching method for silicon semiconductor wafer
US4882245A (en) 1985-10-28 1989-11-21 International Business Machines Corporation Photoresist composition and printed circuit boards and packages made therewith
US4800125A (en) * 1986-10-07 1989-01-24 Dow Corning Corporation Coupling agent compositions
US4826564A (en) 1987-10-30 1989-05-02 International Business Machines Corporation Method of selective reactive ion etching of substrates
US4853095A (en) * 1988-03-09 1989-08-01 Macdermid, Incorporated Conversion of manganese dioxide to permanganate
GB8924142D0 (en) * 1989-10-26 1989-12-13 Ciba Geigy Methods for making metallic patterns
US5077174A (en) 1990-04-10 1991-12-31 E. I. Du Pont De Nemours And Company Positive working dry film element having a layer of resist composition
TW230830B (de) 1991-11-01 1994-09-21 Furukawa Electric Co Ltd
DE69232419T2 (de) * 1991-12-10 2002-09-19 The Dow Chemical Co., Midland Strahlungshärtbare cyclobutaren zusammensetzungen
US5217568A (en) * 1992-02-03 1993-06-08 Motorola, Inc. Silicon etching process using polymeric mask, for example, to form V-groove for an optical fiber coupling
JPH0621499A (ja) * 1992-06-29 1994-01-28 Canon Inc 封止用樹脂組成物及びそれを用いた太陽電池
US5353705A (en) * 1992-07-20 1994-10-11 Presstek, Inc. Lithographic printing members having secondary ablation layers for use with laser-discharge imaging apparatus
JP3417008B2 (ja) * 1993-11-04 2003-06-16 株式会社デンソー 半導体ウエハのエッチング方法
US5591354A (en) * 1994-10-21 1997-01-07 Jp Laboratories, Inc. Etching plastics with nitrosyls
US5753523A (en) 1994-11-21 1998-05-19 Brewer Science, Inc. Method for making airbridge from ion-implanted conductive polymers
US5922410A (en) 1995-01-18 1999-07-13 Rohm And Haas Company Wood coating composition
JP3272188B2 (ja) * 1995-05-17 2002-04-08 三洋電機株式会社 薄膜半導体装置の製造方法
US6162860A (en) 1997-11-12 2000-12-19 S. C. Johnson Commercial Markets, Inc. Solvent based interactive polymeric compositions containing a substantially non-gelled composition
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
TW457703B (en) * 1998-08-31 2001-10-01 Siemens Ag Micro-electronic structure, method for its production and its application in a memory-cell
US7375350B2 (en) 1999-11-24 2008-05-20 Neushul Stephen Computed radiography x-ray cassette with rigid embedded CR plate
JP2003531924A (ja) * 2000-02-28 2003-10-28 アドシル・エルシー シランが基になったコーティング組成物、これから得た被覆製品およびこれの使用方法
US6645695B2 (en) 2000-09-11 2003-11-11 Shipley Company, L.L.C. Photoresist composition
US6756459B2 (en) 2000-09-28 2004-06-29 Rohm And Haas Company Binder compositions for direct-to-metal coatings
US6929705B2 (en) * 2001-04-30 2005-08-16 Ak Steel Corporation Antimicrobial coated metal sheet
US6956268B2 (en) 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
KR100863984B1 (ko) 2001-07-03 2008-10-16 후지필름 가부시키가이샤 포지티브 레지스트 조성물
US6930364B2 (en) 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US7723162B2 (en) * 2002-03-22 2010-05-25 White Electronic Designs Corporation Method for producing shock and tamper resistant microelectronic devices
US20040157426A1 (en) 2003-02-07 2004-08-12 Luc Ouellet Fabrication of advanced silicon-based MEMS devices
JP4207604B2 (ja) 2003-03-03 2009-01-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの形成方法
JP3960281B2 (ja) 2003-05-28 2007-08-15 Ｊｓｒ株式会社 硬化性樹脂組成物、保護膜および保護膜の形成方法
EP1507171A3 (de) 2003-08-15 2008-03-05 FUJIFILM Corporation Lichtempfindlicher Bogen mit einer Unterlage, einer ersten und einer zweiten lichtempfindlichen Schicht sowie einer Barriereschicht
US6920253B2 (en) * 2003-10-02 2005-07-19 Agilent Technologies, Inc Optical modulator based on a microdisk resonator
JP4131864B2 (ja) 2003-11-25 2008-08-13 東京応化工業株式会社 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法
US7316844B2 (en) 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
EP1617178B1 (de) 2004-07-12 2017-04-12 STMicroelectronics Srl Mikroelektromechanische Struktur mit elektrisch isolierten Gebieten und Verfahren zu ihrer Herstellung
ATE470887T1 (de) 2004-10-29 2010-06-15 Jsr Corp Positiv lichtempfindliche isolierende harzzusammensetzung und ausgehärtetes produkt davon
KR100692593B1 (ko) 2005-01-24 2007-03-13 삼성전자주식회사 Ｍｅｍｓ 구조체, 외팔보 형태의 ｍｅｍｓ 구조체 및밀봉된 유체채널의 제조 방법.
US7695890B2 (en) 2005-09-09 2010-04-13 Brewer Science Inc. Negative photoresist for silicon KOH etch without silicon nitride

Also Published As

Publication number Publication date
JP2007520064A (ja) 2007-07-19
EP1715961A4 (de) 2007-08-22
EP1715961B1 (de) 2011-09-07
JP5165247B2 (ja) 2013-03-21
EP1715961A2 (de) 2006-11-02
KR101189394B1 (ko) 2012-10-11
TW200603283A (en) 2006-01-16
SG152244A1 (en) 2009-05-29
US20050158538A1 (en) 2005-07-21
WO2005072489A3 (en) 2006-07-20
WO2005072489A2 (en) 2005-08-11
CN100566852C (zh) 2009-12-09
US20080041815A1 (en) 2008-02-21
US8202442B2 (en) 2012-06-19
US7758913B2 (en) 2010-07-20
KR20060125841A (ko) 2006-12-06
US20060240181A1 (en) 2006-10-26
TWI405263B (zh) 2013-08-11
CN1909977A (zh) 2007-02-07
US7316844B2 (en) 2008-01-08

Similar Documents

Publication Publication Date Title
ATE523263T1 (de) Aufschleuder-schutzbeschichtungen für die nassätzverarbeitung mikroelektronischer substrate
WO2009035866A3 (en) Spin-on protective coatings for wet-etch processing of microelectronic substrates
WO2004051708A3 (de) Verfahren und vorrichtung zum bearbeiten eines wafers sowie wafer mit trennschicht und trägerschicht
WO2008156152A1 (ja) 搬送方法および搬送装置
WO2008120467A1 (ja) 半導体装置の製造方法
TW200712607A (en) Flexible pixel array substrate and method of fabricating the same
GB0207350D0 (en) Surface
WO2006054024A3 (fr) Amincissement d'une plaquette semiconductrice
WO2008020267A3 (en) Etch method in the manufacture of an integrated circuit
WO2007111694A3 (en) Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
WO2007043056A3 (en) Novel integrated circuit support structures and the fabrication thereof
CA2573428A1 (en) Low-maintenance coatings
WO2009073596A3 (en) Formulations for cleaning memory device structures
US11587772B2 (en) Multi-layer protective coating
WO2007106361A3 (en) Thermal transfer barrier building members
JP2014533893A (ja) 電子デバイス構造を提供する方法および関連する電子デバイス構造
JP2001102430A (ja) 防塵用カバーフィルム付きウエハ支持台及びその製造方法
JP6364200B2 (ja) 電子部品用粘着テープ、電子部品の製造方法及びイメージセンサの製造方法
WO2007019487A3 (en) Method and system for fabricating thin devices
TW200620279A (en) MRAM over sloped pillar and the manufacturing method thereof
TW200629462A (en) Supporting plate attaching method
WO2009078121A1 (ja) 半導体基板支持治具及びその製造方法
WO2006069579A3 (en) A device having a hydrophilic coating comprising p-toluene-sulfonamide and a method for the preparation thereof
WO2008007259A3 (en) Semiconductor device and method of manufacturing a semiconductor device
SG142214A1 (en) Process for the fabrication of thin-film device and thin-film device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties