ATE521729T1 - Steuerung oder modelierung von verfahren zur verdichtung von porösen substraten mit kohlenstoff mittels chemischen gasphaseninfiltration - Google Patents

Steuerung oder modelierung von verfahren zur verdichtung von porösen substraten mit kohlenstoff mittels chemischen gasphaseninfiltration

Info

Publication number
ATE521729T1
ATE521729T1 AT04742576T AT04742576T ATE521729T1 AT E521729 T1 ATE521729 T1 AT E521729T1 AT 04742576 T AT04742576 T AT 04742576T AT 04742576 T AT04742576 T AT 04742576T AT E521729 T1 ATE521729 T1 AT E521729T1
Authority
AT
Austria
Prior art keywords
gas
carbon
controlling
substrate
furnace
Prior art date
Application number
AT04742576T
Other languages
English (en)
Inventor
Eric Sion
Paul-Marie Marquaire
Rene Fournet
Guy-Marie Come
Original Assignee
Messier Bugatti
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messier Bugatti filed Critical Messier Bugatti
Application granted granted Critical
Publication of ATE521729T1 publication Critical patent/ATE521729T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/71—Ceramic products containing macroscopic reinforcing agents
    • C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
    • C04B35/80—Fibres, filaments, whiskers, platelets, or the like
    • C04B35/83—Carbon fibres in a carbon matrix
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B1/00—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Food Preservation Except Freezing, Refrigeration, And Drying (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Treating Waste Gases (AREA)
AT04742576T 2003-04-28 2004-04-27 Steuerung oder modelierung von verfahren zur verdichtung von porösen substraten mit kohlenstoff mittels chemischen gasphaseninfiltration ATE521729T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0305194A FR2854168B1 (fr) 2003-04-28 2003-04-28 Commande ou modelisation de procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux par du carbone
PCT/FR2004/001009 WO2004097065A2 (fr) 2003-04-28 2004-04-27 Commande ou modelisation de procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux par du carbone.

Publications (1)

Publication Number Publication Date
ATE521729T1 true ATE521729T1 (de) 2011-09-15

Family

ID=33104451

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04742576T ATE521729T1 (de) 2003-04-28 2004-04-27 Steuerung oder modelierung von verfahren zur verdichtung von porösen substraten mit kohlenstoff mittels chemischen gasphaseninfiltration

Country Status (15)

Country Link
US (1) US7727591B2 (de)
EP (1) EP1620577B1 (de)
JP (1) JP4546459B2 (de)
KR (1) KR101179769B1 (de)
CN (1) CN1777692B (de)
AT (1) ATE521729T1 (de)
BR (1) BRPI0409674A (de)
CA (1) CA2523927C (de)
FR (1) FR2854168B1 (de)
IL (1) IL171439A (de)
MX (1) MXPA05011570A (de)
RU (1) RU2347009C2 (de)
TW (1) TWI352132B (de)
UA (1) UA89025C2 (de)
WO (1) WO2004097065A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691443B2 (en) * 2005-05-31 2010-04-06 Goodrich Corporation Non-pressure gradient single cycle CVI/CVD apparatus and method
US8057855B1 (en) * 2005-05-31 2011-11-15 Goodrich Corporation Non-pressure gradient single cycle CVI/CVD apparatus and method
US20070184179A1 (en) * 2006-02-09 2007-08-09 Akshay Waghray Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc
US7959973B2 (en) * 2006-11-29 2011-06-14 Honeywell International Inc. Pressure swing CVI/CVD
US8383197B2 (en) * 2009-05-28 2013-02-26 Honeywell International Inc. Titanium carbide or tungsten carbide with combustion synthesis to block porosity in C-C brake discs for antioxidation protection
US20110033623A1 (en) * 2009-08-05 2011-02-10 Honeywell International Inc. Method of preventing carbon friction material anti oxidation system migration by utilizing carbon vapor deposition
CA2839406C (en) * 2011-06-16 2019-10-29 Zimmer, Inc. Chemical vapor infiltration apparatus and process
RU2505620C1 (ru) * 2012-05-17 2014-01-27 Виктор Николаевич Кондратьев Способ получения пироуглерода с трехмерно-ориентированной структурой на углеродном изделии
US11326255B2 (en) * 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
US11499230B2 (en) 2014-08-18 2022-11-15 Dynetics, Inc. Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors
EP3183377A4 (de) * 2014-08-18 2018-04-04 Dynetics, Inc. Verfahren und vorrichtung zur herstellung von fasern und mikrostrukturen aus ungleichen molmassevorläufern
US10167555B2 (en) 2014-08-18 2019-01-01 Dynetics, Inc. Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors
US10648075B2 (en) * 2015-03-23 2020-05-12 Goodrich Corporation Systems and methods for chemical vapor infiltration and densification of porous substrates
WO2017033053A1 (en) 2015-08-21 2017-03-02 Flisom Ag Homogeneous linear evaporation source
TWI624554B (zh) * 2015-08-21 2018-05-21 弗里松股份有限公司 蒸發源
US10131985B2 (en) 2016-03-21 2018-11-20 Goodrich Corporation System and method for enhancing a diffusion limited CVI/CVD process
KR102570397B1 (ko) 2016-05-11 2023-08-24 삼성디스플레이 주식회사 유기 박막 트랜지스터 및 그 제조 방법
RU2658858C2 (ru) * 2016-08-31 2018-06-25 Акционерное общество "Уральский научно-исследовательский институт композиционных материалов" (АО "УНИИКМ") Углерод-углеродный композиционный материал и способ изготовления из него изделий
RU2667403C2 (ru) * 2016-08-31 2018-09-19 Акционерное общество "Уральский научно-исследовательский институт композиционных материалов" (АО "УНИИКМ") Углерод-углеродный композиционный материал и способ изготовления из него изделий
CN112446156B (zh) * 2017-12-06 2022-09-23 重庆大唐国际石柱发电有限责任公司 基于炉膛飞灰停留时间的电站锅炉飞灰含碳量的测量方法
RU2678288C1 (ru) * 2018-01-10 2019-01-24 Акционерное общество "Уральский научно-исследовательский институт композиционных материалов" Волокнистый материал объемной структуры из дискретных фрагментированных углеродных волокон, способ его изготовления и устройство для осуществления способа
CN108414836B (zh) * 2018-04-27 2024-01-26 河南理工大学 氮气驱替煤层气用复电阻测量系统及方法
FR3090011B1 (fr) * 2018-12-14 2021-01-01 Safran Ceram Procédé d’infiltration ou de dépôt chimique en phase vapeur
CN111123745B (zh) * 2019-12-05 2021-06-22 苏州华星光电技术有限公司 一种制程设备的控制方法及装置
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings
CN114935614B (zh) * 2022-05-24 2024-02-23 安徽理工大学 一种分析煤体复燃特性的模拟实验装置及实验方法

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JP3754450B2 (ja) * 1994-11-16 2006-03-15 グッドリッチ・コーポレイション 圧力勾配ｃｖｉ／ｃｖｄ法
FR2732677B1 (fr) * 1995-04-07 1997-06-27 Europ Propulsion Procede d'infiltration chimique en phase vapeur avec parametres d'infiltration variables
US6210745B1 (en) * 1999-07-08 2001-04-03 National Semiconductor Corporation Method of quality control for chemical vapor deposition

Also Published As

Publication number Publication date
CN1777692A (zh) 2006-05-24
BRPI0409674A (pt) 2006-04-18
WO2004097065A3 (fr) 2004-12-16
CN1777692B (zh) 2012-09-05
US7727591B2 (en) 2010-06-01
JP4546459B2 (ja) 2010-09-15
TW200506089A (en) 2005-02-16
KR20060010764A (ko) 2006-02-02
CA2523927A1 (en) 2004-11-11
JP2006524624A (ja) 2006-11-02
IL171439A (en) 2009-07-20
FR2854168A1 (fr) 2004-10-29
CA2523927C (en) 2012-09-18
WO2004097065A2 (fr) 2004-11-11
RU2005131994A (ru) 2006-06-10
UA89025C2 (ru) 2009-12-25
MXPA05011570A (es) 2005-12-15
TWI352132B (en) 2011-11-11
RU2347009C2 (ru) 2009-02-20
EP1620577B1 (de) 2011-08-24
US20060263525A1 (en) 2006-11-23
FR2854168B1 (fr) 2007-02-09
EP1620577A2 (de) 2006-02-01
KR101179769B1 (ko) 2012-09-04

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