ATE507504T1 - Verbesserung der prozessmodellgenauigkeit durch simulation von maskenecken-rundungseffekten - Google Patents

Verbesserung der prozessmodellgenauigkeit durch simulation von maskenecken-rundungseffekten

Info

Publication number
ATE507504T1
ATE507504T1 AT07866063T AT07866063T ATE507504T1 AT E507504 T1 ATE507504 T1 AT E507504T1 AT 07866063 T AT07866063 T AT 07866063T AT 07866063 T AT07866063 T AT 07866063T AT E507504 T1 ATE507504 T1 AT E507504T1
Authority
AT
Austria
Prior art keywords
process model
mask
corner rounding
model accuracy
improve process
Prior art date
Application number
AT07866063T
Other languages
English (en)
Inventor
Jensheng Huang
Chun-Chieh Kuo
Lawrence S Melvin
Original Assignee
Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Synopsys Inc filed Critical Synopsys Inc
Application granted granted Critical
Publication of ATE507504T1 publication Critical patent/ATE507504T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
AT07866063T 2007-09-28 2007-12-27 Verbesserung der prozessmodellgenauigkeit durch simulation von maskenecken-rundungseffekten ATE507504T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/863,624 US7707539B2 (en) 2007-09-28 2007-09-28 Facilitating process model accuracy by modeling mask corner rounding effects
PCT/US2007/088957 WO2009041987A1 (en) 2007-09-28 2007-12-27 Improving process model accuracy by modeling mask corner rounding effects

Publications (1)

Publication Number Publication Date
ATE507504T1 true ATE507504T1 (de) 2011-05-15

Family

ID=39687349

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07866063T ATE507504T1 (de) 2007-09-28 2007-12-27 Verbesserung der prozessmodellgenauigkeit durch simulation von maskenecken-rundungseffekten

Country Status (8)

Country Link
US (2) US7707539B2 (de)
EP (1) EP2198343B1 (de)
JP (1) JP5306357B2 (de)
CN (1) CN101675385B (de)
AT (1) ATE507504T1 (de)
DE (1) DE602007014269D1 (de)
TW (1) TWI456420B (de)
WO (1) WO2009041987A1 (de)

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US8184897B2 (en) * 2008-10-02 2012-05-22 Synopsys, Inc. Method and apparatus for determining an optical threshold and a resist bias
US8146025B2 (en) * 2009-07-30 2012-03-27 United Microelectronics Corp. Method for correcting layout pattern using rule checking rectangle
US8255838B2 (en) * 2010-01-15 2012-08-28 Synopsys, Inc. Etch-aware OPC model calibration by using an etch bias filter
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US9679224B2 (en) 2013-06-28 2017-06-13 Cognex Corporation Semi-supervised method for training multiple pattern recognition and registration tool models
CN104882373B (zh) * 2015-04-24 2018-05-15 石以瑄 晶体管t形栅的制造方法
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US10354373B2 (en) 2017-04-26 2019-07-16 Kla-Tencor Corporation System and method for photomask alignment and orientation characterization based on notch detection
CN107479331B (zh) * 2017-07-31 2020-05-15 上海华力微电子有限公司 一种图形转角的opc修正方法
CN108565213B (zh) * 2018-01-26 2020-07-07 成都海威华芯科技有限公司 一种高电子迁移率晶体管t形栅的制造方法
CN109143773B (zh) * 2018-10-16 2022-05-27 上海华力微电子有限公司 一种光学临近修正前的预处理方法
KR20200072981A (ko) * 2018-12-13 2020-06-23 삼성전자주식회사 마스크 레이아웃 설계 방법, opc 방법, 및 그 opc 방법을 이용한 마스크 제조방법
CN109634070B (zh) * 2019-02-01 2020-09-01 墨研计算科学（南京）有限公司 一种基于掩模版拐角圆化的计算光刻方法及装置
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Also Published As

Publication number Publication date
TWI456420B (zh) 2014-10-11
EP2198343B1 (de) 2011-04-27
CN101675385A (zh) 2010-03-17
US7853919B2 (en) 2010-12-14
WO2009041987A1 (en) 2009-04-02
CN101675385B (zh) 2012-09-05
DE602007014269D1 (de) 2011-06-09
US7707539B2 (en) 2010-04-27
US20100146476A1 (en) 2010-06-10
EP2198343A1 (de) 2010-06-23
JP2010541003A (ja) 2010-12-24
US20090089736A1 (en) 2009-04-02
JP5306357B2 (ja) 2013-10-02
TW200915121A (en) 2009-04-01

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