TWI456420B - 以模型化光罩轉角變圓作用，決定改良製程模型的方法與其電腦可讀取儲存媒體 - Google Patents

以模型化光罩轉角變圓作用，決定改良製程模型的方法與其電腦可讀取儲存媒體 Download PDF

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TWI456420B
TWI456420B TW096150566A TW96150566A TWI456420B TW I456420 B TWI456420 B TW I456420B TW 096150566 A TW096150566 A TW 096150566A TW 96150566 A TW96150566 A TW 96150566A TW I456420 B TWI456420 B TW I456420B
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reticle
mcr
layout
process model
mask
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TW096150566A
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TW200915121A (en
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Jensheng Huang
Chun Chieh Kuo
Melvin, Iii
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Synopsys Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Claims (22)

  1. 一種決定模型化光罩轉角變圓作用的改良製程模型的方法，該方法包含：接收一光罩佈局；接收藉由施加一光微影製程至該光罩佈局所產生之製程資料；接收一未校正製程模型；指明在該光罩佈局中之一組轉角；修改鄰近該組轉角之該光罩佈局，以取得一修改光罩佈局，其中對該光罩佈局的修改關係於光罩轉角變圓作用；及藉由使用該修改光罩佈局及該製程資料，來校正該未校正製程模型，以決定該改良之製程模型。
  2. 如申請專利範圍第1項所述之方法，其中修改該光罩佈局包含加入斜角人造外形至該組轉角中之一轉角。
  3. 如申請專利範圍1項所述之方法，其中修改該光罩佈局包含加入一缺口人造外形至該組轉角中之一轉角。
  4. 如申請專利範圍第1項所述之方法，其中該組轉角包含一內轉角及一外轉角，及其中修改該光罩佈局包含：將一第一人造外形加入至該內轉角；及將一第二人造外形加入至該外轉角，其中該第二人造外形係與該第一人造外形不同。
  5. 如申請專利範圍第4項所述之方法，其中該第一 人造外形之大小與該第二人造外形的大小不同。
  6. 如申請專利範圍第4項所述之方法，其中該第一人造外形之形狀與該第二人造外形的形狀不同。
  7. 一種儲存指令之電腦可讀取儲存媒體，當指令為電腦所執行時，使得該電腦執行決定模型化光罩轉角變圓作用的改良製程模型的方法，該方法包含：接收一光罩佈局；接收藉由施加一光微影製程至該光罩佈局所產生之製程資料；接收一未校正製程模型；指明在該光罩佈局中之一組轉角；修改鄰近該組轉角之該光罩佈局，以取得一修改光罩佈局，其中對該光罩佈局的修改關係於光罩轉角變圓作用；及藉由使用該修改光罩佈局及該製程資料，來校正該未校正製程模型，以決定該改良之製程模型。
  8. 如申請專利範圍第7項所述之電腦可讀取儲存媒體，其中修改該光罩佈局包含加入斜角人造外形至該組轉角中之一轉角。
  9. 如申請專利範圍7項所述之電腦可讀取儲存媒體，其中修改該光罩佈局包含加入一缺口人造外形至該組轉角中之一轉角。
  10. 如申請專利範圍第7項所述之電腦可讀取儲存媒體，其中該組轉角包含一內轉角及一外轉角，及其中修改 該光罩佈局包含：將一第一人造外形加入至該內轉角；及將一第二人造外形加入至該外轉角，其中該第二人造外形係與該第一人造外形不同。
  11. 如申請專利範圍第10項所述之電腦可讀取儲存媒體，其中該第一人造外形之大小與該第二人造外形的大小不同。
  12. 如申請專利範圍第10項所述之電腦可讀取儲存媒體，其中該第一人造外形之形狀與該第二人造外形的形狀不同。
  13. 一種決定模型化光罩轉角變圓作用的改良製程模型的方法，該方法包含：接收一光罩佈局；接收藉由施加一光微影製程至該光罩佈局所產生之製程資料；接收一未校正製程模型，該模型包含：一光學元件；及一組光罩轉角變圓(MCR)元件，其中每一MCR元件被設計以模型化MCR作用；指明在該光罩佈局中之一組轉角；決定一組光罩層，其包含：一第一光罩層，其包含在該光罩佈局中之實際所有圖案；及一組MCR光罩層，其中在每一MCR光罩層中之 實際所有圖案有關於在該光罩佈局中之鄰近該組轉角的圖案，及其中每一MCR光罩層係相關於一MCR元件；及藉由使用該組光罩層及該製程資料，來校正該未校正製程模型，以決定該改良之製程模型。
  14. 如申請專利範圍第13項所述之方法，其中該組MCR元件包含：用以模型化內轉角的MCR作用的內轉角元件；及用以模型化外轉角的MCR作用的外轉角元件。
  15. 如申請專利範圍第13項所述之方法，其中該組MCR光罩層包含：一內轉角光罩層，其中在該內轉角光罩層中之實際所有圖案關係於在該光罩佈局中鄰近內轉角的圖案；及一外轉角光罩層，其中在該外轉角光罩層中之實際所有圖案關係於在該光罩佈局中鄰近外轉角的圖案。
  16. 如申請專利範圍第13項所述之方法，其中決定該改良製程模型包含：卷積該光學元件與該第一光罩層；及卷積每一MCR元件與該所相關MCR光罩層。
  17. 一種儲存指令之電腦可讀取儲存媒體，當指令為電腦所執行時，使得該電腦執行一種決定模型化光罩轉角變圓作用的改良製程模型的方法，該方法包含：接收一光罩佈局；接收藉由施加一光微影製程至該光罩佈局所產生之製程資料； 接收一未校正製程模型，該模型包含：一光學元件；及一組光罩轉角變圓(MCR)元件，其中每一MCR元件被設計以模型化MCR作用；指明在該光罩佈局中之一組轉角；決定一組光罩層，其包含：一第一光罩層，其包含在該光罩佈局中之實際所有圖案；及一組MCR光罩層，其中在每一MCR光罩層中之實際所有圖案有關於在該光罩佈局中之鄰近該組轉角的圖案，及其中每一MCR光罩層係相關於一MCR元件；及藉由使用該組光罩層及該製程資料，來校正該未校正製程模型，以決定該改良之製程模型。
  18. 如申請專利範圍第17項所述之電腦可讀取儲存媒體，其中該組MCR元件包含：用以模型化內轉角的MCR作用的內轉角元件；及用以模型化外轉角的MCR作用的外轉角元件。
  19. 如申請專利範圍第17項所述之方法，其中該組MCR光罩層包含：一內轉角光罩層，其中在該內轉角光罩層中之實際所有圖案關係於在該光罩佈局中鄰近內轉角的圖案；及一外轉角光罩層，其中在該外轉角光罩層中之實際所有圖案關係於在該光罩佈局中鄰近外轉角的圖案。
  20. 如申請專利範圍第17項所述之方法，其中決定 該改良製程模型包含：卷積該光學元件與該第一光罩層；及卷積每一MCR元件與該所相關MCR光罩層。
  21. 一種儲存指令之電腦可讀取儲存媒體，當指令為電腦所執行時，使得該電腦執行一種決定一改良製程模型的方法，該方法包含：接收一光罩佈局；接收製程資料，其中該製程資料係藉由量測使用該光罩佈局及一光微影製程所產生之特性的臨界尺寸加以產生；接收一未校正製程模型，該模型包含：一光學元件；及一光罩轉角變圓(MCR)元件，其被設計以模型化MCR作用；選擇在該光罩佈局中之一組轉角；決定一MCR光罩層，其中在該MCR光罩層中之實際所有圖案有關於在該光罩佈局中之鄰近該組轉角的圖案；藉由使用該光罩佈局、該MCR光罩層、及該製程資料，來校正該未校正製程模型，以決定該改良之製程模型；及輸出該改良之製程模型。
  22. 如申請專利範圍第21項所述之電腦可讀取儲存媒體，其中決定該改良製程模型包含：卷積該光學元件與該第一光罩佈局；及 卷積該MCR元件與該MCR光罩層。
TW096150566A 2007-09-28 2007-12-27 以模型化光罩轉角變圓作用，決定改良製程模型的方法與其電腦可讀取儲存媒體 TWI456420B (zh)

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US11/863,624 US7707539B2 (en) 2007-09-28 2007-09-28 Facilitating process model accuracy by modeling mask corner rounding effects

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US (2) US7707539B2 (zh)
EP (1) EP2198343B1 (zh)
JP (1) JP5306357B2 (zh)
CN (1) CN101675385B (zh)
AT (1) ATE507504T1 (zh)
DE (1) DE602007014269D1 (zh)
TW (1) TWI456420B (zh)
WO (1) WO2009041987A1 (zh)

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JP5306357B2 (ja) 2013-10-02
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US7707539B2 (en) 2010-04-27
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