ATE478438T1 - Integrierte toroidspuleninduktoren für ic- bauelemente und herstellungsverfahren - Google Patents

Integrierte toroidspuleninduktoren für ic- bauelemente und herstellungsverfahren

Info

Publication number
ATE478438T1
ATE478438T1 AT02725187T AT02725187T ATE478438T1 AT E478438 T1 ATE478438 T1 AT E478438T1 AT 02725187 T AT02725187 T AT 02725187T AT 02725187 T AT02725187 T AT 02725187T AT E478438 T1 ATE478438 T1 AT E478438T1
Authority
AT
Austria
Prior art keywords
coil
solenoidal
beol
fabrication
embedded
Prior art date
Application number
AT02725187T
Other languages
English (en)
Inventor
Raul Acosta
Melanie Carasso
Steven Cordes
Robert Groves
Jennifer Lund
Joanna Rosner
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE478438T1 publication Critical patent/ATE478438T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
AT02725187T 2001-03-14 2002-03-13 Integrierte toroidspuleninduktoren für ic- bauelemente und herstellungsverfahren ATE478438T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/808,381 US6492708B2 (en) 2001-03-14 2001-03-14 Integrated coil inductors for IC devices
PCT/US2002/007992 WO2002073702A1 (en) 2001-03-14 2002-03-13 Integrated toroidal coil inductors for ic devices

Publications (1)

Publication Number Publication Date
ATE478438T1 true ATE478438T1 (de) 2010-09-15

Family

ID=25198608

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02725187T ATE478438T1 (de) 2001-03-14 2002-03-13 Integrierte toroidspuleninduktoren für ic- bauelemente und herstellungsverfahren

Country Status (9)

Country Link
US (2) US6492708B2 (de)
EP (1) EP1374314B1 (de)
JP (1) JP4299543B2 (de)
KR (1) KR100629063B1 (de)
CN (1) CN100466294C (de)
AT (1) ATE478438T1 (de)
DE (1) DE60237354D1 (de)
TW (1) TW556235B (de)
WO (1) WO2002073702A1 (de)

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JP4324952B2 (ja) * 2003-02-26 2009-09-02 Ｔｄｋラムダ株式会社 インダクタンス素子の製造方法
US7609763B2 (en) * 2003-07-18 2009-10-27 Microsoft Corporation Advanced bi-directional predictive coding of video frames
US7985677B2 (en) * 2004-11-30 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7517791B2 (en) * 2004-11-30 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7696625B2 (en) * 2004-11-30 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7732349B2 (en) * 2004-11-30 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of insulating film and semiconductor device
KR100683866B1 (ko) * 2004-12-03 2007-02-15 삼성전자주식회사 감광성 필름 및 공동(空洞)을 이용하여 제조된 인덕터 및그 제조방법
US7687326B2 (en) * 2004-12-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US10522279B2 (en) 2005-09-22 2019-12-31 Radial Electronics, Inc. Embedded high voltage transformer components and methods
US7477128B2 (en) * 2005-09-22 2009-01-13 Radial Electronics, Inc. Magnetic components
US9754712B2 (en) 2005-09-22 2017-09-05 Radial Electronics, Inc. Embedded magnetic components and methods
US10431367B2 (en) 2005-09-22 2019-10-01 Radial Electronics, Inc. Method for gapping an embedded magnetic device
US10049803B2 (en) 2005-09-22 2018-08-14 Radial Electronics, Inc. Arrayed embedded magnetic components and methods
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US7531407B2 (en) 2006-07-18 2009-05-12 International Business Machines Corporation Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
US20080052110A1 (en) * 2006-08-23 2008-02-28 Cambridge Software Solutions Corp. Referral system
US20100327406A1 (en) * 2009-06-26 2010-12-30 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate
US8313659B2 (en) * 2009-07-10 2012-11-20 Seagate Technology Llc Fabrication of multi-dimensional microstructures
US8664745B2 (en) * 2010-07-20 2014-03-04 Triune Ip Llc Integrated inductor
CN102738128B (zh) * 2011-03-30 2015-08-26 香港科技大学 大电感值集成磁性感应器件及其制造方法
US8742539B2 (en) * 2012-07-27 2014-06-03 Infineon Technologies Austria Ag Semiconductor component and method for producing a semiconductor component
DE102012018013B4 (de) 2012-09-12 2014-09-18 X-Fab Semiconductor Foundries Ag Spiralförmige, integrierbare Spulen mit zentrischen Anschlüssen in planarer grabenisolierter Siliziumhalbleitertechnologie
KR20140083577A (ko) * 2012-12-26 2014-07-04 삼성전기주식회사 공통모드필터 및 이의 제조방법
KR20150025859A (ko) * 2013-08-30 2015-03-11 삼성전기주식회사 코일 부품 및 이를 이용하는 전자 모듈
US9355972B2 (en) 2014-03-04 2016-05-31 International Business Machines Corporation Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator
US9893141B2 (en) * 2015-02-26 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic core, inductor, and method for fabricating the magnetic core
US10431377B2 (en) 2015-03-26 2019-10-01 Toyota Motor Engineering & Manufacturing North America, Inc. High efficiency magnetic component
US10304603B2 (en) * 2016-06-29 2019-05-28 International Business Machines Corporation Stress control in magnetic inductor stacks
US10811177B2 (en) 2016-06-30 2020-10-20 International Business Machines Corporation Stress control in magnetic inductor stacks
US10283249B2 (en) 2016-09-30 2019-05-07 International Business Machines Corporation Method for fabricating a magnetic material stack

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Also Published As

Publication number Publication date
US6720230B2 (en) 2004-04-13
WO2002073702A1 (en) 2002-09-19
TW556235B (en) 2003-10-01
JP4299543B2 (ja) 2009-07-22
US6492708B2 (en) 2002-12-10
WO2002073702A9 (en) 2003-03-20
KR20040072022A (ko) 2004-08-16
EP1374314A1 (de) 2004-01-02
US20020130386A1 (en) 2002-09-19
DE60237354D1 (de) 2010-09-30
EP1374314B1 (de) 2010-08-18
CN1526171A (zh) 2004-09-01
JP2004524696A (ja) 2004-08-12
CN100466294C (zh) 2009-03-04
KR100629063B1 (ko) 2006-09-26
US20030011041A1 (en) 2003-01-16
EP1374314A4 (de) 2008-03-12

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