ATE469419T1 - Integrierte schaltung mit phasenänderungs- speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen - Google Patents

Integrierte schaltung mit phasenänderungs- speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen

Info

Publication number
ATE469419T1
ATE469419T1 AT05792269T AT05792269T ATE469419T1 AT E469419 T1 ATE469419 T1 AT E469419T1 AT 05792269 T AT05792269 T AT 05792269T AT 05792269 T AT05792269 T AT 05792269T AT E469419 T1 ATE469419 T1 AT E469419T1
Authority
AT
Austria
Prior art keywords
memory cells
phase change
change memory
integrated circuit
phase
Prior art date
Application number
AT05792269T
Other languages
English (en)
Inventor
Martijn Lankhorst
Hendrik Huizing
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE469419T1 publication Critical patent/ATE469419T1/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
AT05792269T 2004-10-21 2005-10-17 Integrierte schaltung mit phasenänderungs- speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen ATE469419T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04105212 2004-10-21
PCT/IB2005/053399 WO2006043230A1 (en) 2004-10-21 2005-10-17 Integrated circuit with phase-change memory cells and method for addressing phase-change memory cells

Publications (1)

Publication Number Publication Date
ATE469419T1 true ATE469419T1 (de) 2010-06-15

Family

ID=35636940

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05792269T ATE469419T1 (de) 2004-10-21 2005-10-17 Integrierte schaltung mit phasenänderungs- speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen

Country Status (9)

Country Link
US (1) US7911822B2 (de)
EP (1) EP1807840B1 (de)
JP (1) JP2008518373A (de)
KR (1) KR20070067150A (de)
CN (1) CN101044577B (de)
AT (1) ATE469419T1 (de)
DE (1) DE602005021527D1 (de)
TW (1) TW200627457A (de)
WO (1) WO2006043230A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7839672B1 (en) * 2006-12-18 2010-11-23 Marvell International Ltd. Phase change memory array circuits and methods of manufacture
ATE527702T1 (de) 2008-01-16 2011-10-15 Nxp Bv Mehrschichtige struktur mit einer phasenwechselmaterialschicht und verfahren zu ihrer herstellung
US20140159770A1 (en) * 2012-12-12 2014-06-12 Alexander Mikhailovich Shukh Nonvolatile Logic Circuit

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4202017A (en) * 1978-05-08 1980-05-06 Sperry Rand Corporation Magnetic recording signal equalization apparatus
AU3769900A (en) 1999-03-25 2000-10-09 Energy Conversion Devices Inc. Electrically programmable memory element with improved contacts
DE10297786B4 (de) 2002-09-11 2012-11-08 Ovonyx Inc. Programmierung eines Phasenübergangsmaterialspeichers
US6912146B2 (en) * 2002-12-13 2005-06-28 Ovonyx, Inc. Using an MOS select gate for a phase change memory
WO2004057618A2 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Electric device comprising a layer of phase change material and method of manufacturing the same
KR100546322B1 (ko) * 2003-03-27 2006-01-26 삼성전자주식회사 비휘발성 메모리와 휘발성 메모리로 선택적으로 동작할 수있는 상 변화 메모리 장치 및 상 변화 메모리 장치의 동작방법
DE102004016408B4 (de) * 2003-03-27 2008-08-07 Samsung Electronics Co., Ltd., Suwon Phasenwechselspeicherbaustein und zugehöriges Programmierverfahren
KR100498493B1 (ko) * 2003-04-04 2005-07-01 삼성전자주식회사 저전류 고속 상변화 메모리 및 그 구동 방식
KR100564567B1 (ko) * 2003-06-03 2006-03-29 삼성전자주식회사 상 변화 메모리의 기입 드라이버 회로
US7085154B2 (en) * 2003-06-03 2006-08-01 Samsung Electronics Co., Ltd. Device and method for pulse width control in a phase change memory device
EP1634296A4 (de) * 2003-06-09 2007-02-14 Nantero Inc Nichtflüchtige elektromechanische feldeffektbausteine und schaltungen damit und verfahren zu ihrer herstellung
US7308067B2 (en) * 2003-08-04 2007-12-11 Intel Corporation Read bias scheme for phase change memories
KR100520228B1 (ko) * 2004-02-04 2005-10-11 삼성전자주식회사 상변화 메모리 장치 및 그에 따른 데이터 라이팅 방법
KR100647218B1 (ko) * 2004-06-04 2006-11-23 비욘드마이크로 주식회사 고집적 상변화 메모리 셀 어레이 및 이를 포함하는 상변화메모리 소자
KR100587702B1 (ko) * 2004-07-09 2006-06-08 삼성전자주식회사 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
US7289351B1 (en) * 2005-06-24 2007-10-30 Spansion Llc Method of programming a resistive memory device

Also Published As

Publication number Publication date
EP1807840B1 (de) 2010-05-26
WO2006043230A1 (en) 2006-04-27
CN101044577A (zh) 2007-09-26
KR20070067150A (ko) 2007-06-27
JP2008518373A (ja) 2008-05-29
TW200627457A (en) 2006-08-01
EP1807840A1 (de) 2007-07-18
US20090067226A1 (en) 2009-03-12
CN101044577B (zh) 2011-06-15
DE602005021527D1 (de) 2010-07-08
US7911822B2 (en) 2011-03-22

Similar Documents

Publication Publication Date Title
JP5214566B2 (ja) 抵抗変化メモリ装置
CN1838321B (zh) 有增强的位线和/或字线驱动能力的非易失性存储器设备
JP5032621B2 (ja) 不揮発性半導体メモリ及びその製造方法
US8199557B2 (en) Nonvolatile semiconductor memory device and method of resetting the same
CN103310837B (zh) 半导体存储器器件和存储器基元电压施加方法
US8345464B2 (en) Resistive memory devices having a stacked structure and methods of operation thereof
US20120243294A1 (en) Resistance-change memory
US9036398B2 (en) Vertical resistance memory device and a read method thereof
JP2006079812A (ja) 半導体メモリ装置及びリード動作方法
TW200636736A (en) Non-volatile semiconductor memory device and operation method thereof
US20080198646A1 (en) Nonvolatile memory device using resistance material
WO2007050679A3 (en) Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
TW201243846A (en) Semiconductor memory device
CN104756192A (zh) 具有节能读取架构的存储器阵列
JP2010033683A (ja) 不揮発性半導体記憶装置
JP2008016144A (ja) 不揮発性メモリ及びその制御方法
CN103811052A (zh) 阻变存储器件及其驱动方法
JP2011198445A (ja) 半導体記憶装置
US7843720B2 (en) Phase change memory and method discharging bitline
US8665644B2 (en) Stacked memory device and method of fabricating same
ATE469419T1 (de) Integrierte schaltung mit phasenänderungs- speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen
JP2011060389A (ja) 半導体メモリ装置
US7852666B2 (en) Nonvolatile memory using resistance material
US9019783B2 (en) Semiconductor memory device including write driver and method of controlling the same
US11328768B2 (en) Phase change memory device, system including the memory device, and method for operating the memory device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties