ATE467910T1 - Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung - Google Patents

Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung

Info

Publication number
ATE467910T1
ATE467910T1 AT00301345T AT00301345T ATE467910T1 AT E467910 T1 ATE467910 T1 AT E467910T1 AT 00301345 T AT00301345 T AT 00301345T AT 00301345 T AT00301345 T AT 00301345T AT E467910 T1 ATE467910 T1 AT E467910T1
Authority
AT
Austria
Prior art keywords
substrate
holder
opening
deposition
spacer
Prior art date
Application number
AT00301345T
Other languages
English (en)
Inventor
Masataka Kondo
Takayuki Suzuki
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11048387A external-priority patent/JP2000252505A/ja
Priority claimed from JP11201338A external-priority patent/JP2001026866A/ja
Priority claimed from JP11228524A external-priority patent/JP2001053305A/ja
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of ATE467910T1 publication Critical patent/ATE467910T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT00301345T 1999-02-25 2000-02-21 Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung ATE467910T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11048387A JP2000252505A (ja) 1999-02-25 1999-02-25 太陽電池モジュール
JP11201338A JP2001026866A (ja) 1999-07-15 1999-07-15 スパッタリングによる成膜方法
JP11228524A JP2001053305A (ja) 1999-08-12 1999-08-12 非単結晶シリコン系薄膜光電変換装置

Publications (1)

Publication Number Publication Date
ATE467910T1 true ATE467910T1 (de) 2010-05-15

Family

ID=27293276

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00301345T ATE467910T1 (de) 1999-02-25 2000-02-21 Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung

Country Status (5)

Country Link
US (1) US6294722B1 (de)
EP (1) EP1039552B1 (de)
AT (1) ATE467910T1 (de)
AU (1) AU768057B2 (de)
DE (1) DE60044384D1 (de)

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Also Published As

Publication number Publication date
EP1039552B1 (de) 2010-05-12
AU768057B2 (en) 2003-11-27
DE60044384D1 (de) 2010-06-24
EP1039552A2 (de) 2000-09-27
US6294722B1 (en) 2001-09-25
EP1039552A3 (de) 2003-08-13
AU1844100A (en) 2000-08-31

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