CN113363303A - 一种透明导电基板及其制备方法 - Google Patents

一种透明导电基板及其制备方法 Download PDF

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CN113363303A
CN113363303A CN202110618135.4A CN202110618135A CN113363303A CN 113363303 A CN113363303 A CN 113363303A CN 202110618135 A CN202110618135 A CN 202110618135A CN 113363303 A CN113363303 A CN 113363303A
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glass substrate
transparent conductive
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卢虎贲
李珍
李弋舟
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Hunan Zhixin Microelectronics Technology Co ltd
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Abstract

本发明提供了一种透明导电基板包括：玻璃基板，第一导电层，单质金导电层。所述单质金导电层的图案可根据需要进行设计。本发明还提供了所述的透明导电基板制备方法，准备表面干燥洁净的玻璃基板，在所述玻璃基板一侧溅射纯铬，涂胶，曝光，显影，蒸镀，得到具有蒸镀种子层的基板，根据设计的图形用电镀的方法在单质金导电种子层的基础上长出单质金导电层，去胶、腐蚀得到透明的导电基板。

Description

一种透明导电基板及其制备方法
技术领域
本发明涉及一种透明导电基板及制备该导电基板的方法。
背景技术
作为液晶显示器，电致发光显示器，等离子显示器等显示元件作用透明电极，触摸面板，太阳能电池等的透明电镀、红外线反射、电磁波屏蔽、抗静电、防雾等功能性涂层所使用的透明导电基板的形成材料，已知有锡掺杂氧化铟(Indium Tin Oxide,下记为ITO)。
但是对于这样各种ITO透明导电膜形成的基板，由于ITO透明导电膜形成过程需要用涂布液在基板上涂布，干燥，烧成而形成，其涂布液中的有机铟化合物等在通过烧成是的热分解或燃烧(氧化)而转化为ITO膜的过程中，形成的ITO微粒之间难以致密化，因此，得到的透明导电膜存在导电性不充分，或膜强度低，易脱落的问题。因此为了利用于显示器、触摸面板、太阳能电池等期望具有导电性以及粘附性更好的透明导电膜的基板。
发明内容
本发明提供了一种透明导电基板，可以有效解决上述问题。
本发明是这样实现的：
一种透明导电基板，包括：玻璃基板、第一导电层、单质金导电层；所述第一导电层设置于所述玻璃基板的一侧，所述单质金导电层设置于所述第一导电层远离所述玻璃基板的一侧，所述第一导电层为通过将铬溅射在所述玻璃基板得到。
进一步地，所述透明导电基板，其中，所述第一导电层为铬层，所述铬层表面光滑平整，厚度均匀一致为60～100nm。
进一步地，所述透明导电基板，其中，所述单质金导电层设置于所述第一导电层远离所述玻璃基板的一侧，所述单质金导电层为不同连续化图形，或不连续的点。
本发明还进一步提供所述透明导电基板的制备方法，包括如下步骤：
S1准备表面干燥洁净的玻璃基板；
S2在所述玻璃基板一侧溅射纯铬，溅射在真空条件下进行，所述纯铬的厚度根据溅射功率以及时间调整，在所述玻璃基板一侧形成纯铬层；
S3在所述纯铬层相对于所述玻璃基板距离较远的一侧涂光刻胶，形成光刻胶层；
S4用图形化的光刻母版曝光显影，在所述光刻胶层得到图形化的凹槽；
S5显影后在未去胶的所述玻璃基板蒸镀单质金导电种子层；
S6用电镀的方法在所述单质金导电种子层的基础上生长需要的厚度，得到单质金导电层；
S7电镀完成后去胶然后进行铬腐蚀得到具有所述单质金导电层的透明导电基板。
进一步地，所述透明导电基板的制备方法，其中，在步骤S2中，在所述玻璃基板一侧溅射合适厚度的纯铬层，所述纯铬层的厚度为60～150nm。
进一步地，所述的透明导电基板的制备方法，其中，步骤S5显影后在未去胶的基板蒸镀所述单质金导电种子层,所述单质金导电种子厚度为1～5nm。
本发明的有益效果是：采用铬作为电镀膜层，铬的导电性较好，可以保证膜层的导电性与粘附性，相比于ITO/IWO等非金属基底的粘附性好，电镀后的蚀刻更简单，种子层的厚度可以更薄，为1-2nm,电镀区域变小，节约成本。
附图说明
为了更清楚地说明本发明实施方式的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1是本发明实施方式提供的流程图。
具体实施方式
为使本发明实施方式的目的、技术方案和优点更加清楚，下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。因此，以下对在附图中提供的本发明的实施方式的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施方式。基于本发明中的实施方式，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。
参照图1所示，
一种透明导电基板，包括：玻璃基板、第一导电层、单质金导电层；所述第一导电层设置于所述玻璃基板的一侧，所述单质金导电层设置于所述第一导电层远离所述玻璃基板的一侧，所述第一导电层为通过将铬溅射在所述玻璃基板得到。
进一步地，所述的透明导电基板，其中，所述第一导电层为纯铬层，所述纯铬层表面光滑平整，厚度均匀60～150nm。
进一步地，所述的透明导电基板，其中，所述单质金导电层设置于所述第一导电层远离所述玻璃基板的一侧，为不同图形或不连续的点。
进一步地，所述透明导电基板的制备方法，其中，包括如下步骤
S1准备表面干燥洁净的玻璃基板；
S2在所述玻璃基板一侧溅射合适厚度的纯铬，溅射在真空条件下进行，纯铬的厚度根据溅射功率以及时间调整，在所述玻璃基板一侧形成纯铬层；
S3在所述纯铬层相对于所述玻璃基板距离较远的一侧涂一层光刻胶；
S4用图形化的光刻母版曝光显影，在所述光刻胶层得到图形化的凹槽；
S5显影后在未去胶的基板蒸镀一层单质金导电种子层；
S6用电镀的方法在所述单质金导电种子层的基础上生长需要厚度的单质金导电层；
S7电镀完成后去胶然后进行铬腐蚀得到具有所述单质金导电层透明导电基板。
进一步地，为了使所述纯铬层对所述光刻胶、玻璃基板以及后续的单质金导电层均具有较强的粘附性，需要使所述纯铬层具有一定的厚度。然而，当所述纯铬层的厚度过大时，一方面影响整个所述透明导电基板的透光性，另一方面，随着厚度的增加还会使其均匀性降低。故，优选的，在步骤S2中，所述纯铬层的厚度为60～150nm。更优选的，所述纯铬层的厚度为100～120nm。
所述单质金导电种子层的主要作用为诱导后续单质金导电层的快速形成。可以理解，所述单质金导电种子层的厚度较小时，对后续的电镀难以产生诱导作用，不利于单质金导电层的快速形成，当所述单质金导电种子层的厚度过大时，蒸镀于所述光刻胶上面的单质金导电种子层后续会被去除而产生浪费。故，优选的，所述单质金导电种子层厚度均匀为1～5nm。更优选的，所述单质金导电种子层厚度均匀为1～2nm。所述单质金导种子层厚度可以通过蒸镀的时间以及功率控制，在此不再累述。
实施例1：透明导电基板的制备，在玻璃基板上溅射一层60nm的纯铬，在铬层上均匀涂一层光刻胶，所涂光刻胶用图形化的光刻模板曝光后显影得到单质金导电层图形化需要的凹槽，所涂光刻胶曝光显影后再未去胶的基板蒸镀一层1nm的单质金导电种子层，用电镀的方法在单质金导电种子层的基础上生长厚度为60nm的单质金导电层。电镀完成后去胶得到可分立存在的图形，即单质金导电层可为不连续的点。去胶完成后进行铬腐蚀，去除基板表面多余的铬，仅保留和单质金导电层结合在一起的铬层，得到透明导电基板。
实施例2：透明导电基板的制备，在玻璃基板上溅射一层120nm的纯铬，在铬层上均匀涂一层光刻胶，所涂光刻胶用图形化的光刻模板曝光后显影得到单质金导电层图形化需要的凹槽，所涂光刻胶曝光显影后在未去胶的基板蒸镀2nm的单质金导电种子，用电镀的方法在单质金导电种子的基础上生长厚度为120nm的单质金导电层。电镀完成后去胶得到可分立存在的图形，即单质金导电层为不同的图形或不连续的点。去胶完成后进行腐蚀，去除基板表面多余的铬，仅保留和单质金导电层结合在一起的铬层，得到透明导电基板。
实施例3：透明导电基板的制备，在玻璃基板上溅射一层150nm的纯铬，在铬层上均匀涂一层光刻胶，所涂光刻胶用图形化的光刻模板曝光后显影得到单质金导电层图形化需要的凹槽，所涂光刻胶曝光显影后再未去胶的基板蒸镀一层5nm的单质金导电种子层，用电镀的方法在单质金导电种子层的基础上生长厚度为150nm的单质金导电层。电镀完成后去胶得到可分立存在的图形，即单质金导电层可为不连续的点。去胶完成后进行铬腐蚀，去除基板表面多余的铬，仅保留和单质金导电层结合再一起的铬层，得到透明导电基板。
对比例1：透明导电基板的制备，在玻璃基板上溅射一层60nmITO层，在ITO层上均匀涂一层光刻胶，所涂光刻胶用图形化的光刻模板曝光后显影得到单质金导电层图形化需要的凹槽，所涂光刻胶曝光显影后在未去胶的基板蒸镀一层2nm的单质金导电种子层，用电镀的方法在单质金导电种子层的基础上生长厚度为150nm的单质金导电层。电镀完成后去胶得到可分立存在的图形，即单质金导电层为不连续的点。去胶完成后进行ITO腐蚀，去除基板表面多余的ITO，仅保留和单质金导电层结合再一起的ITO层，得到透明导电基板。
性能测试：将实施例以及对比例作为样品采用伏安法进行透明导电基板进行导电性试验，测试透明导电基板的电阻，电阻越小，导电性能越好，测试结果如表1
表1、透明导电基板电阻测试
透明导电基板 电阻测试
实施例1 0.9Ω
实施例2 0.8Ω
实施例3 0.9Ω
对比例1 10Ω
将实施例以及对比例得到透明导电基板作为测试样品进行粘附性的实验，黏附性实验采用十字栅格法，在所述测试样品表面划栅格，通过测量测试样品表面脱落点以及脱落面积的大小比对粘附性能的高低，脱落点越少，脱落面积越小，则黏附性能越高，测试结果如表2
表2、透明导电基板粘附性测试
Figure BDA0003098568520000071
Figure BDA0003098568520000081
以上所述仅为本发明的优选实施方式而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (7)

1.一种透明导电基板，其特征在于，包括：玻璃基板、第一导电层、单质金导电层；所述第一导电层设置于所述玻璃基板的一侧，所述单质金导电层设置于所述第一导电层远离所述玻璃基板的一侧，所述第一导电层为通过将铬溅射在所述玻璃基板得到。
2.根据权利要求1所述的透明导电基板，其特征在于，所述第一导电层为铬层，所述铬层厚度为60～150nm。
3.根据权利要求1所述的透明导电基板，其特征在于，所述铬层的厚度为100～120nm。
4.根据权利要求1所述的透明导电基板，其特征在于，所述单质金导电层为不同的连续化图形或不连续的点。
5.一种透明导电基板的制备方法，其特征在于，包括如下步骤，
S1准备表面干燥洁净的玻璃基板；
S2在所述玻璃基板一侧溅射纯铬，溅射在真空条件下进行，在所述玻璃基板一侧形成纯铬层；
S3在所述纯铬层远离所述玻璃基板的一侧涂光刻胶，得到光刻胶层；
S4用图形化的光刻母版曝光显影，在所述光刻胶层得到图形化的凹槽；
S5显影后在未去胶的所述玻璃基板上蒸镀单质金导电种子层；
S6用电镀的方法在所述单质金导电种子层的基础上生长需要的厚度，得到单质金导电层；
S7电镀完成后去除所述光刻胶然后进行铬腐蚀得到所述透明导电基板。
6.根据权利要求5所述的透明导电基板的制备方法，其特征在于，在步骤S2中，所述纯铬的厚度为60～150nm。
7.根据权利要求5所述的透明导电基板的制备方法，其特征在于，在步骤S5中，所述单质金导电种子层的厚度为1～5nm。
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