ATE467909T1 - Solarzelle und herstellungsverfahren - Google Patents

Solarzelle und herstellungsverfahren

Info

Publication number
ATE467909T1
ATE467909T1 AT05703486T AT05703486T ATE467909T1 AT E467909 T1 ATE467909 T1 AT E467909T1 AT 05703486 T AT05703486 T AT 05703486T AT 05703486 T AT05703486 T AT 05703486T AT E467909 T1 ATE467909 T1 AT E467909T1
Authority
AT
Austria
Prior art keywords
type
compound semiconductor
semiconductor layer
conductive film
apertures
Prior art date
Application number
AT05703486T
Other languages
English (en)
Inventor
Yasuhito Takahashi
Yukiyoshi Ono
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of ATE467909T1 publication Critical patent/ATE467909T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT05703486T 2004-01-13 2005-01-12 Solarzelle und herstellungsverfahren ATE467909T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004005768 2004-01-13
PCT/JP2005/000247 WO2005069386A1 (ja) 2004-01-13 2005-01-12 太陽電池とその製造方法

Publications (1)

Publication Number Publication Date
ATE467909T1 true ATE467909T1 (de) 2010-05-15

Family

ID=34792113

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05703486T ATE467909T1 (de) 2004-01-13 2005-01-12 Solarzelle und herstellungsverfahren

Country Status (7)

Country Link
US (1) US7557294B2 (de)
EP (1) EP1705717B1 (de)
JP (1) JP4098330B2 (de)
CN (1) CN100459174C (de)
AT (1) ATE467909T1 (de)
DE (1) DE602005021200D1 (de)
WO (1) WO2005069386A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080290875A1 (en) * 1996-11-04 2008-11-27 Park Larry A Seismic activity detector
WO2004097915A1 (ja) 2003-04-25 2004-11-11 Semiconductor Energy Laboratory Co., Ltd. 液滴吐出装置、パターンの形成方法、および半導体装置の製造方法
US7462514B2 (en) * 2004-03-03 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US20050196710A1 (en) * 2004-03-04 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
US8158517B2 (en) 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
TWI399861B (zh) * 2007-12-06 2013-06-21 Chung Shan Inst Of Science Structure of solar cell absorbent layer and manufacturing method thereof
TWI374859B (en) 2008-05-28 2012-10-21 Ind Tech Res Inst Photo energy transformation catalysts and methods for fabricating the same
JP5287380B2 (ja) * 2009-03-13 2013-09-11 Ｔｄｋ株式会社 太陽電池、及び太陽電池の製造方法
EP2454755A4 (de) * 2009-07-13 2016-03-30 First Solar Inc Kontaktdotierung einer solarzellenvorderseite
JP2011176283A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 光電変換素子の製造方法
EP2565939A4 (de) * 2010-04-27 2014-04-23 Kyocera Corp Photoelektrisches umwandlungselement, photoelektrische umwandlungsvorrichtung und verfahren zur herstellung des photoelektrischen umwandlungselements
JP5421890B2 (ja) * 2010-11-09 2014-02-19 富士フイルム株式会社 光電変換素子の製造方法
KR101349484B1 (ko) * 2011-11-29 2014-01-10 엘지이노텍 주식회사 태양전지 모듈 및 이의 제조방법
JP6076615B2 (ja) * 2012-04-27 2017-02-08 東京エレクトロン株式会社 不純物拡散方法、基板処理装置及び半導体装置の製造方法
US20140042407A1 (en) * 2012-08-08 2014-02-13 Vanderbilt University Biohybrid photoelectrochemical energy conversion device
JP6357757B2 (ja) * 2012-11-19 2018-07-18 東ソー株式会社 酸化物焼結体、それを用いたスパッタリングターゲット及び酸化物膜
WO2014155444A1 (ja) * 2013-03-26 2014-10-02 キヤノンアネルバ株式会社 太陽電池の製造方法、および太陽電池
KR102042657B1 (ko) * 2013-08-22 2019-11-28 재단법인대구경북과학기술원 박막 태양전지 및 이의 제조방법
WO2019099607A1 (en) * 2017-11-16 2019-05-23 First Solar, Inc. Layer structures for photovoltaic devices and photovoltaic devices including the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697481A (ja) 1992-09-14 1994-04-08 Matsushita Electric Ind Co Ltd ホモ接合半導体装置とそれを用いた光電変換半導体装置の製造方法
JPH07302926A (ja) * 1994-04-30 1995-11-14 Canon Inc 太陽電池モジュール
JP2922466B2 (ja) 1996-08-29 1999-07-26 時夫 中田 薄膜太陽電池
EP0837511B1 (de) * 1996-10-15 2005-09-14 Matsushita Electric Industrial Co., Ltd Sonnenzelle und Herstellungsverfahren
JP3646953B2 (ja) 1996-10-15 2005-05-11 松下電器産業株式会社 太陽電池
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
US5948176A (en) * 1997-09-29 1999-09-07 Midwest Research Institute Cadmium-free junction fabrication process for CuInSe2 thin film solar cells
JP3434259B2 (ja) * 1999-03-05 2003-08-04 松下電器産業株式会社 太陽電池
US6259016B1 (en) * 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
JP4549570B2 (ja) * 2001-05-15 2010-09-22 昭和シェル石油株式会社 ヘテロ接合薄膜太陽電池の製造方法

Also Published As

Publication number Publication date
JPWO2005069386A1 (ja) 2007-12-27
DE602005021200D1 (de) 2010-06-24
EP1705717B1 (de) 2010-05-12
CN100459174C (zh) 2009-02-04
JP4098330B2 (ja) 2008-06-11
US20070295396A1 (en) 2007-12-27
WO2005069386A1 (ja) 2005-07-28
US7557294B2 (en) 2009-07-07
CN1842920A (zh) 2006-10-04
EP1705717A4 (de) 2009-04-08
EP1705717A1 (de) 2006-09-27

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