ATE452408T1 - Asynchroner statischer direktzugriffspeicher - Google Patents

Asynchroner statischer direktzugriffspeicher

Info

Publication number
ATE452408T1
ATE452408T1 AT04778275T AT04778275T ATE452408T1 AT E452408 T1 ATE452408 T1 AT E452408T1 AT 04778275 T AT04778275 T AT 04778275T AT 04778275 T AT04778275 T AT 04778275T AT E452408 T1 ATE452408 T1 AT E452408T1
Authority
AT
Austria
Prior art keywords
random access
access memory
sram
static random
asynchronous static
Prior art date
Application number
AT04778275T
Other languages
German (de)
English (en)
Inventor
Uri Cummings
Andrew Lines
Original Assignee
Fulcrum Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fulcrum Microsystems Inc filed Critical Fulcrum Microsystems Inc
Application granted granted Critical
Publication of ATE452408T1 publication Critical patent/ATE452408T1/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
AT04778275T 2003-07-14 2004-07-13 Asynchroner statischer direktzugriffspeicher ATE452408T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48753603P 2003-07-14 2003-07-14
PCT/US2004/022679 WO2005008672A2 (en) 2003-07-14 2004-07-13 Asynchronous static random access memory

Publications (1)

Publication Number Publication Date
ATE452408T1 true ATE452408T1 (de) 2010-01-15

Family

ID=34079380

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04778275T ATE452408T1 (de) 2003-07-14 2004-07-13 Asynchroner statischer direktzugriffspeicher

Country Status (6)

Country Link
US (2) US7050324B2 (https=)
EP (1) EP1647030B1 (https=)
JP (1) JP4904154B2 (https=)
AT (1) ATE452408T1 (https=)
DE (1) DE602004024683D1 (https=)
WO (1) WO2005008672A2 (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7584449B2 (en) * 2004-11-22 2009-09-01 Fulcrum Microsystems, Inc. Logic synthesis of multi-level domino asynchronous pipelines
US7814280B2 (en) * 2005-01-12 2010-10-12 Fulcrum Microsystems Inc. Shared-memory switch fabric architecture
US7359281B2 (en) 2005-02-01 2008-04-15 Intelliserv, Inc. Read and/or write detection system for an asynchronous memory array
US7504851B2 (en) * 2006-04-27 2009-03-17 Achronix Semiconductor Corporation Fault tolerant asynchronous circuits
US7505304B2 (en) * 2006-04-27 2009-03-17 Achronix Semiconductor Corporation Fault tolerant asynchronous circuits
EP2020085B1 (en) * 2006-04-27 2017-11-08 Achronix Semiconductor Corp. Fault tolerant asynchronous circuits
US7913201B2 (en) * 2006-09-08 2011-03-22 International Business Machines Corporation Structure for estimating power consumption of integrated circuitry
US8027825B2 (en) 2007-01-09 2011-09-27 International Business Machines Corporation Structure for testing an operation of integrated circuitry
US8006155B2 (en) 2007-01-09 2011-08-23 International Business Machines Corporation Testing an operation of integrated circuitry
US7707535B2 (en) * 2007-02-23 2010-04-27 International Business Machines Corporation Stitched IC chip layout design structure
US7703060B2 (en) * 2007-02-23 2010-04-20 International Business Machines Corporation Stitched IC layout methods, systems and program product
DE102007009526B4 (de) * 2007-02-27 2017-08-24 Infineon Technologies Ag Vorrichtung zum Speichern eines binären Zustandes
US7916718B2 (en) * 2007-04-19 2011-03-29 Fulcrum Microsystems, Inc. Flow and congestion control in switch architectures for multi-hop, memory efficient fabrics
US20080273366A1 (en) * 2007-05-03 2008-11-06 International Business Machines Corporation Design structure for improved sram device performance through double gate topology
US7768325B2 (en) * 2008-04-23 2010-08-03 International Business Machines Corporation Circuit and design structure for synchronizing multiple digital signals
US7958482B2 (en) * 2008-04-30 2011-06-07 International Business Machines Corporation Stitched circuitry region boundary identification for stitched IC chip layout
US8006211B2 (en) * 2008-04-30 2011-08-23 International Business Machines Corporation IC chip and design structure including stitched circuitry region boundary identification
US7952912B2 (en) * 2008-06-06 2011-05-31 Purdue Research Foundation Static random access memory cell and devices using same
US8397133B2 (en) * 2008-11-26 2013-03-12 Arizona Board Of Regents For And On Behalf Of Arizona State University Circuits and methods for dual redundant register files with error detection and correction mechanisms
US8370557B2 (en) * 2008-12-19 2013-02-05 Intel Corporation Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory
US8706793B1 (en) 2009-04-02 2014-04-22 Xilinx, Inc. Multiplier circuits with optional shift function
US9411554B1 (en) 2009-04-02 2016-08-09 Xilinx, Inc. Signed multiplier circuit utilizing a uniform array of logic blocks
US7746109B1 (en) 2009-04-02 2010-06-29 Xilinx, Inc. Circuits for sharing self-timed logic
US8527572B1 (en) 2009-04-02 2013-09-03 Xilinx, Inc. Multiplier architecture utilizing a uniform array of logic blocks, and methods of using the same
US9002915B1 (en) 2009-04-02 2015-04-07 Xilinx, Inc. Circuits for shifting bussed data
US7982496B1 (en) 2009-04-02 2011-07-19 Xilinx, Inc. Bus-based logic blocks with optional constant input
US7948265B1 (en) * 2009-04-02 2011-05-24 Xilinx, Inc. Circuits for replicating self-timed logic
US7746108B1 (en) 2009-04-02 2010-06-29 Xilinx, Inc. Compute-centric architecture for integrated circuits
US7733123B1 (en) * 2009-04-02 2010-06-08 Xilinx, Inc. Implementing conditional statements in self-timed logic circuits
US7746101B1 (en) 2009-04-02 2010-06-29 Xilinx, Inc. Cascading input structure for logic blocks in integrated circuits
KR101646705B1 (ko) * 2009-12-01 2016-08-09 삼성전자주식회사 에스-박스를 구현한 암호화 장치
US8402164B1 (en) 2010-10-27 2013-03-19 Xilinx, Inc. Asynchronous communication network and methods of enabling the asynchronous communication of data in an integrated circuit
US8644088B2 (en) 2010-10-28 2014-02-04 Hynix Semiconductor Inc. Semiconductor memory device and semiconductor system including the same
US9058860B2 (en) 2012-03-29 2015-06-16 Memoir Systems, Inc. Methods and apparatus for synthesizing multi-port memory circuits
US9508405B2 (en) 2013-10-03 2016-11-29 Stmicroelectronics International N.V. Method and circuit to enable wide supply voltage difference in multi-supply memory
US9361973B2 (en) * 2013-10-28 2016-06-07 Cypress Semiconductor Corporation Multi-channel, multi-bank memory with wide data input/output
US10043194B2 (en) 2014-04-04 2018-08-07 International Business Machines Corporation Network demand forecasting
US10361924B2 (en) 2014-04-04 2019-07-23 International Business Machines Corporation Forecasting computer resources demand
US10439891B2 (en) 2014-04-08 2019-10-08 International Business Machines Corporation Hyperparameter and network topology selection in network demand forecasting
US9385934B2 (en) 2014-04-08 2016-07-05 International Business Machines Corporation Dynamic network monitoring
US10713574B2 (en) 2014-04-10 2020-07-14 International Business Machines Corporation Cognitive distributed network
DE102014106909B4 (de) * 2014-05-16 2019-08-14 Infineon Technologies Ag Verfahren zum Zugreifen auf einen Speicher und Speicherzugriffsschaltung
TWI609375B (zh) 2016-01-21 2017-12-21 國立成功大學 雙字線非同步驅動的記憶細胞及具此記憶細胞的記憶體
CN119294323B (zh) * 2024-12-11 2025-03-04 兰州大学 一种基于事件驱动型电路的异步fifo及其数据处理方法

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395540A (ja) * 1986-10-09 1988-04-26 Nec Corp メモリインタフエ−ス回路
JPS63173143A (ja) * 1987-01-13 1988-07-16 Nec Corp メモリインタフエ−ス回路
JPH0322289A (ja) * 1989-06-19 1991-01-30 Hitachi Ltd ダイナミック型ram
JPH0359884A (ja) * 1989-07-27 1991-03-14 Nec Corp 半導体記憶装置
US5752070A (en) * 1990-03-19 1998-05-12 California Institute Of Technology Asynchronous processors
JPH04328663A (ja) * 1991-04-26 1992-11-17 Fuji Xerox Co Ltd Dramアクセス調停方法および装置
JP3153568B2 (ja) * 1991-07-03 2001-04-09 株式会社東芝 マルチポートram用メモリセル及びマルチポートram
JPH05233320A (ja) * 1992-02-19 1993-09-10 Mitsubishi Electric Corp マイクロコンピュータ
JPH05289989A (ja) * 1992-04-15 1993-11-05 Sony Corp 多出力遅延回路
JPH05334261A (ja) * 1992-06-04 1993-12-17 Japan Radio Co Ltd ライトアクセス時の高速非同期通信方式
US5268863A (en) * 1992-07-06 1993-12-07 Motorola, Inc. Memory having a write enable controlled word line
JPH0628865A (ja) * 1992-07-10 1994-02-04 Fujitsu Ltd 半導体記憶装置
JP2869336B2 (ja) * 1993-06-01 1999-03-10 松下電器産業株式会社 半導体記憶装置
JPH06342414A (ja) * 1993-06-01 1994-12-13 Fujitsu Ltd データ転送装置
JP2663838B2 (ja) * 1993-07-27 1997-10-15 日本電気株式会社 半導体集積回路装置
JPH07240095A (ja) * 1994-02-28 1995-09-12 Toshiba Corp マルチポートメモリ
JPH0869434A (ja) * 1994-08-30 1996-03-12 Oki Electric Ind Co Ltd 転送制御回路
DE69615421T2 (de) * 1995-01-12 2002-06-06 Intergraph Corp., Huntsville Registerspeicher mit Umleitungsmöglichkeit
JPH09128958A (ja) * 1995-11-01 1997-05-16 Sony Corp 半導体メモリ装置
JPH09180433A (ja) * 1995-12-21 1997-07-11 Kawasaki Steel Corp ファーストイン・ファーストアウトメモリ装置
JPH09231770A (ja) * 1996-01-19 1997-09-05 Sgs Thomson Microelectron Inc メモリセルへの書込を終了させる回路及び方法
JPH09282886A (ja) * 1996-01-19 1997-10-31 Sgs Thomson Microelectron Inc メモリセルへの書込の開始をトラッキングする回路及び方法
JP3178383B2 (ja) * 1996-09-20 2001-06-18 株式会社日立製作所 同期型半導体論理回路
JPH10112646A (ja) * 1996-10-04 1998-04-28 Hitachi Ltd 半導体論理回路
JPH10283781A (ja) * 1997-04-03 1998-10-23 Matsushita Electric Ind Co Ltd マルチポートメモリ
EP0884876B1 (en) * 1997-05-31 2010-02-03 Texas Instruments Incorporated Improved packet switching
US6502180B1 (en) * 1997-09-12 2002-12-31 California Institute Of Technology Asynchronous circuits with pipelined completion process
US6038656A (en) 1997-09-12 2000-03-14 California Institute Of Technology Pipelined completion for asynchronous communication
US6046606A (en) * 1998-01-21 2000-04-04 International Business Machines Corporation Soft error protected dynamic circuit
JP3183245B2 (ja) * 1998-03-06 2001-07-09 日本電気株式会社 半導体記憶装置
US6052772A (en) * 1998-04-13 2000-04-18 International Business Machines Corporation Memory request protocol method
US6169422B1 (en) * 1998-07-20 2001-01-02 Sun Microsystems, Inc. Apparatus and methods for high throughput self-timed domino circuits
US6349378B1 (en) * 1999-03-31 2002-02-19 U.S. Philips Corporation Data processing using various data processors
JP4308972B2 (ja) * 1999-05-20 2009-08-05 エルピーダメモリ株式会社 半導体記憶装置
JP3386117B2 (ja) * 2000-01-11 2003-03-17 日本電気株式会社 マルチレイヤクラス識別通信装置と通信装置
US6505323B1 (en) * 2000-02-17 2003-01-07 Avant! Corporation Methods, apparatus and computer program products that perform layout versus schematic comparison of integrated circuit memory devices using bit cell detection and depth first searching techniques
US6697957B1 (en) * 2000-05-11 2004-02-24 Quickturn Design Systems, Inc. Emulation circuit with a hold time algorithm, logic analyzer and shadow memory
US6614438B1 (en) * 2000-05-30 2003-09-02 Koninlijke Philips Electronics N.V. Data-processing arrangement for processing different types of data
US6519204B2 (en) * 2000-11-03 2003-02-11 Broadcom Corporation Very small swing high performance CMOS static memory (multi-port register file) with power reducing column multiplexing scheme
JP3613726B2 (ja) * 2000-12-06 2005-01-26 日本電信電話株式会社 非同期式回路
JP2003004599A (ja) * 2001-06-26 2003-01-08 Nkk Corp 構造物の疲労損傷度の評価方法及び表示方法
AU2002347870A1 (en) * 2001-10-11 2003-04-22 California Institute Of Technology Method and system for compiling circuit designs
JP3811392B2 (ja) * 2001-11-27 2006-08-16 鹿島建設株式会社 気象環境を考慮したコンクリート構造物の劣化評価システム及びライフサイクルコスト評価システム、劣化評価方法及びライフサイクルコスト評価方法、プログラム、記録媒体
US7283557B2 (en) * 2002-01-25 2007-10-16 Fulcrum Microsystems, Inc. Asynchronous crossbar with deterministic or arbitrated control
US6954084B2 (en) * 2002-02-11 2005-10-11 Seiko Epson Corporation Logic circuits using polycrystalline semiconductor thin film transistors
US6950959B2 (en) * 2002-02-12 2005-09-27 Fulcrum Microystems Inc. Techniques for facilitating conversion between asynchronous and synchronous domains

Also Published As

Publication number Publication date
US20050024928A1 (en) 2005-02-03
US7161828B2 (en) 2007-01-09
JP4904154B2 (ja) 2012-03-28
EP1647030A4 (en) 2007-03-07
DE602004024683D1 (https=) 2010-01-28
WO2005008672A2 (en) 2005-01-27
US7050324B2 (en) 2006-05-23
WO2005008672A3 (en) 2005-07-14
EP1647030A2 (en) 2006-04-19
JP2007531957A (ja) 2007-11-08
EP1647030B1 (en) 2009-12-16
WO2005008672B1 (en) 2005-08-18
US20050276095A1 (en) 2005-12-15

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