DE60303045D1 - Auffrischen von mehrportspeicher in integrierten schaltungen - Google Patents

Auffrischen von mehrportspeicher in integrierten schaltungen

Info

Publication number
DE60303045D1
DE60303045D1 DE60303045T DE60303045T DE60303045D1 DE 60303045 D1 DE60303045 D1 DE 60303045D1 DE 60303045 T DE60303045 T DE 60303045T DE 60303045 T DE60303045 T DE 60303045T DE 60303045 D1 DE60303045 D1 DE 60303045D1
Authority
DE
Germany
Prior art keywords
refreshing
integrated circuits
multiport storage
multiport
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60303045T
Other languages
English (en)
Other versions
DE60303045T2 (de
Inventor
Raj Kumar Jain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE60303045D1 publication Critical patent/DE60303045D1/de
Application granted granted Critical
Publication of DE60303045T2 publication Critical patent/DE60303045T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE60303045T 2002-09-19 2003-08-26 Auffrischen von mehrportspeicher in integrierten schaltungen Expired - Lifetime DE60303045T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65128 2002-09-19
US10/065,128 US6711081B1 (en) 2002-09-19 2002-09-19 Refreshing of multi-port memory in integrated circuits
PCT/EP2003/009447 WO2004027781A1 (en) 2002-09-19 2003-08-26 Refreshing of multi-port memory in integrated circuits

Publications (2)

Publication Number Publication Date
DE60303045D1 true DE60303045D1 (de) 2006-02-02
DE60303045T2 DE60303045T2 (de) 2006-08-03

Family

ID=31975651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60303045T Expired - Lifetime DE60303045T2 (de) 2002-09-19 2003-08-26 Auffrischen von mehrportspeicher in integrierten schaltungen

Country Status (6)

Country Link
US (1) US6711081B1 (de)
EP (1) EP1540658B1 (de)
JP (1) JP2005531101A (de)
CN (1) CN100470668C (de)
DE (1) DE60303045T2 (de)
WO (1) WO2004027781A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958944B1 (en) * 2004-05-26 2005-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Enhanced refresh circuit and method for reduction of DRAM refresh cycles
US7619942B2 (en) * 2005-09-29 2009-11-17 Hynix Semiconductor Inc. Multi-port memory device having self-refresh mode
US7362640B2 (en) * 2005-12-29 2008-04-22 Mosaid Technologies Incorporated Apparatus and method for self-refreshing dynamic random access memory cells
US8531907B2 (en) * 2011-01-28 2013-09-10 Infineon Technologies Ag Semiconductor memory device and method
US9251885B2 (en) * 2012-12-28 2016-02-02 Intel Corporation Throttling support for row-hammer counters
KR101639946B1 (ko) * 2015-04-13 2016-07-14 엘에스산전 주식회사 듀얼 포트 메모리 시스템의 접근 제어 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203159A (en) * 1978-10-05 1980-05-13 Wanlass Frank M Pseudostatic electronic memory
JPS59140694A (ja) * 1983-01-31 1984-08-13 Sharp Corp ダイナミツクｒａｍのリフレツシユ方法
KR0135699B1 (ko) * 1994-07-11 1998-04-24 김주용 셀프-리프레쉬 가능한 듀얼포트 동적 캠셀 및 리프레쉬장치
JPH08115594A (ja) * 1994-10-18 1996-05-07 Oki Electric Ind Co Ltd デュアルポートｄｒａｍのデータ読出転送とリフレッシュの方法
US5923593A (en) * 1996-12-17 1999-07-13 Monolithic Systems, Inc. Multi-port DRAM cell and memory system using same
US5963497A (en) * 1998-05-18 1999-10-05 Silicon Aquarius, Inc. Dynamic random access memory system with simultaneous access and refresh operations and methods for using the same
US6487107B1 (en) * 1999-09-29 2002-11-26 Infineon Technologies Ag Retention time of memory cells by reducing leakage current
JP3708801B2 (ja) * 2000-06-16 2005-10-19 松下電器産業株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JP2005531101A (ja) 2005-10-13
WO2004027781A1 (en) 2004-04-01
EP1540658A1 (de) 2005-06-15
CN1685440A (zh) 2005-10-19
EP1540658B1 (de) 2005-12-28
DE60303045T2 (de) 2006-08-03
CN100470668C (zh) 2009-03-18
US6711081B1 (en) 2004-03-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN