ATE451694T1 - Adaptive deterministische gruppierung von blöcken in mehrblockeinheiten - Google Patents

Adaptive deterministische gruppierung von blöcken in mehrblockeinheiten

Info

Publication number
ATE451694T1
ATE451694T1 AT04814563T AT04814563T ATE451694T1 AT E451694 T1 ATE451694 T1 AT E451694T1 AT 04814563 T AT04814563 T AT 04814563T AT 04814563 T AT04814563 T AT 04814563T AT E451694 T1 ATE451694 T1 AT E451694T1
Authority
AT
Austria
Prior art keywords
blocks
linking
memory
block units
metablocks
Prior art date
Application number
AT04814563T
Other languages
English (en)
Inventor
Carlos Gonzalez
Alan D Bryce
Sergey A Gorobets
Alan D Bennett
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE451694T1 publication Critical patent/ATE451694T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Compression Or Coding Systems Of Tv Signals (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Error Detection And Correction (AREA)
AT04814563T 2003-12-30 2004-12-15 Adaptive deterministische gruppierung von blöcken in mehrblockeinheiten ATE451694T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,157 US20050144516A1 (en) 2003-12-30 2003-12-30 Adaptive deterministic grouping of blocks into multi-block units
PCT/US2004/042400 WO2005066974A1 (en) 2003-12-30 2004-12-15 Adaptive deterministic grouping of blocks into multi-block units

Publications (1)

Publication Number Publication Date
ATE451694T1 true ATE451694T1 (de) 2009-12-15

Family

ID=34701162

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04814563T ATE451694T1 (de) 2003-12-30 2004-12-15 Adaptive deterministische gruppierung von blöcken in mehrblockeinheiten

Country Status (9)

Country Link
US (3) US20050144516A1 (de)
EP (1) EP1700313B1 (de)
JP (1) JP4960705B2 (de)
KR (1) KR20060120231A (de)
CN (1) CN1930635B (de)
AT (1) ATE451694T1 (de)
DE (1) DE602004024582D1 (de)
TW (1) TWI294081B (de)
WO (1) WO2005066974A1 (de)

Families Citing this family (210)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8027194B2 (en) 1988-06-13 2011-09-27 Samsung Electronics Co., Ltd. Memory system and method of accessing a semiconductor memory device
JP4284200B2 (ja) * 2004-01-28 2009-06-24 株式会社東芝 不揮発性半導体記憶システム
US7464306B1 (en) * 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
EP1630657A1 (de) * 2004-08-30 2006-03-01 STMicroelectronics S.r.l. Eingebetteter Speicher mit integrierter Datenverwaltung und Speichersystem dazu
US7315917B2 (en) * 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
EP1712985A1 (de) * 2005-04-15 2006-10-18 Deutsche Thomson-Brandt Gmbh Verfahren und System zum Speichern von logischen Datenblöcken in Löschblöcken in mehreren nichtflüchtigen Speichereinheiten, die an mindestens einem gemeinsamen Datenbus angeschlossen sind
US7558906B2 (en) * 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7409489B2 (en) 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
US7552271B2 (en) * 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
DE602006019263D1 (de) * 2005-08-03 2011-02-10 Sandisk Corp Nichtflüchtiger speicher mit blockverwaltung
US7546515B2 (en) 2005-12-27 2009-06-09 Sandisk Corporation Method of storing downloadable firmware on bulk media
US7536627B2 (en) 2005-12-27 2009-05-19 Sandisk Corporation Storing downloadable firmware on bulk media
WO2007077595A1 (ja) * 2005-12-28 2007-07-12 Fujitsu Limited メモリ制御方法、プログラム及び装置
US7441068B2 (en) 2006-01-06 2008-10-21 Phison Electronics Corp. Flash memory and method for utilizing the same
US7774643B2 (en) * 2006-01-06 2010-08-10 Dot Hill Systems Corporation Method and apparatus for preventing permanent data loss due to single failure of a fault tolerant array
GB2434460B (en) * 2006-01-24 2007-12-05 Phison Electronics Corp Flash memory and method for utilizing the same
KR100703807B1 (ko) * 2006-02-17 2007-04-09 삼성전자주식회사 블록 방식의 메모리에서 데이터의 변경 유형에 따라 블록을관리하는 방법 및 장치
KR100675015B1 (ko) * 2006-02-24 2007-01-29 삼성전자주식회사 스캔 기능 및 컬럼 리던던시를 포함하는 내장형 메모리장치, 리던던시 리페어 및 스캔 방법
JP4171749B2 (ja) * 2006-04-17 2008-10-29 Ｔｄｋ株式会社 メモリコントローラおよびフラッシュメモリシステム
US20080010510A1 (en) * 2006-06-19 2008-01-10 Tony Turner Method and system for using multiple memory regions for redundant remapping
US20080052446A1 (en) * 2006-08-28 2008-02-28 Sandisk Il Ltd. Logical super block mapping for NAND flash memory
KR100784007B1 (ko) * 2006-10-31 2007-12-10 주식회사 하이닉스반도체 비휘발성 메모리 장치 및 그 소거 방법
KR100809069B1 (ko) * 2006-11-03 2008-03-03 삼성전자주식회사 비휘발성 메모리를 구비하는 광학 매체 드라이브 및 그구동 방법
US20080162787A1 (en) * 2006-12-28 2008-07-03 Andrew Tomlin System for block relinking
WO2008082950A1 (en) * 2006-12-28 2008-07-10 Sandisk Corporation System for block relinking
US20080162612A1 (en) * 2006-12-28 2008-07-03 Andrew Tomlin Method for block relinking
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7669092B2 (en) 2007-02-26 2010-02-23 Micron Technology, Inc. Apparatus, method, and system of NAND defect management
US8190841B2 (en) * 2007-03-21 2012-05-29 Intel Corporation Method of managing sectors of a non-volatile memory
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US20090006436A1 (en) * 2007-06-29 2009-01-01 Alqudah Yazan A Automated yield analysis system
US20090013148A1 (en) 2007-07-03 2009-01-08 Micron Technology, Inc. Block addressing for parallel memory arrays
US9373362B2 (en) * 2007-08-14 2016-06-21 Dell Products L.P. System and method for implementing a memory defect map
KR20090021476A (ko) * 2007-08-27 2009-03-04 삼성전자주식회사 메모리 셀 어레이, 이를 포함하는 비휘발성 메모리 장치 및메모리 셀 어레이 구성 방법
KR101372245B1 (ko) * 2007-08-30 2014-03-10 삼성전자주식회사 메모리 셀 어레이, 이를 포함하는 비휘발성 메모리 장치 및메모리 셀 어레이 구성 방법
KR101399549B1 (ko) * 2007-09-04 2014-05-28 삼성전자주식회사 반도체 메모리 장치 및 그것의 블록 관리 방법
US7818493B2 (en) * 2007-09-07 2010-10-19 Sandisk Corporation Adaptive block list management
KR20090026941A (ko) * 2007-09-11 2009-03-16 삼성전자주식회사 복수개의 비휘발성 데이터 저장매체를 구비한 저장장치의가상 파일 시스템에서 어드레스 맵핑을 수행하는 방법 및그 장치
US8566504B2 (en) * 2007-09-28 2013-10-22 Sandisk Technologies Inc. Dynamic metablocks
US8621137B2 (en) 2007-12-27 2013-12-31 Sandisk Enterprise Ip Llc Metadata rebuild in a flash memory controller following a loss of power
TW200931425A (en) * 2008-01-11 2009-07-16 Phison Electronics Corp Method for managing flash memory blocks and controller using the same
JP5032371B2 (ja) 2008-03-01 2012-09-26 株式会社東芝 メモリシステム
JP5010505B2 (ja) * 2008-03-01 2012-08-29 株式会社東芝 メモリシステム
WO2009140157A2 (en) * 2008-05-15 2009-11-19 Board Of Governors Of Higher Education, State Of Rhode Island And Providence Plantations Systems and methods for recovering information from nand gate array memory systems
US8074023B2 (en) * 2008-05-22 2011-12-06 Nuvoton Technology Corporation In-system programming to switch memory access from one area to another in memory cards
US7971007B2 (en) * 2008-07-08 2011-06-28 Silicon Motion, Inc. Downgrade memory apparatus, and method for accessing a downgrade memory
KR101103061B1 (ko) * 2008-07-28 2012-01-06 주식회사 팍스디스크 반도체 스토리지 시스템 및 그 제어 방법
US8327066B2 (en) * 2008-09-30 2012-12-04 Samsung Electronics Co., Ltd. Method of managing a solid state drive, associated systems and implementations
JP4632180B2 (ja) 2008-10-15 2011-02-16 Ｔｄｋ株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
JP2010092200A (ja) * 2008-10-07 2010-04-22 Tdk Corp メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
JP4720891B2 (ja) * 2008-09-30 2011-07-13 Ｔｄｋ株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
US8214579B2 (en) 2008-09-30 2012-07-03 Tdk Corporation Memory controller, flash memory system with memory controller, and method of controlling flash memory
JP4582232B2 (ja) * 2008-09-30 2010-11-17 Ｔｄｋ株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
US7962801B2 (en) * 2008-10-15 2011-06-14 Silicon Motion, Inc. Link table recovery method
US8244960B2 (en) * 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8261174B2 (en) * 2009-01-13 2012-09-04 International Business Machines Corporation Protecting and migrating memory lines
JP4762323B2 (ja) 2009-03-03 2011-08-31 富士通株式会社 アクセス制御装置、情報処理装置、アクセス制御プログラム及びアクセス制御方法
US8239614B2 (en) * 2009-03-04 2012-08-07 Micron Technology, Inc. Memory super block allocation
US8095765B2 (en) * 2009-03-04 2012-01-10 Micron Technology, Inc. Memory block management
US8555141B2 (en) * 2009-06-04 2013-10-08 Lsi Corporation Flash memory organization
US8166258B2 (en) * 2009-07-24 2012-04-24 Lsi Corporation Skip operations for solid state disks
US8321639B2 (en) * 2009-12-30 2012-11-27 Lsi Corporation Command tracking for direct access block storage devices
US8286004B2 (en) * 2009-10-09 2012-10-09 Lsi Corporation Saving encryption keys in one-time programmable memory
US8245112B2 (en) * 2009-06-04 2012-08-14 Lsi Corporation Flash memory organization
US20100306451A1 (en) * 2009-06-01 2010-12-02 Joshua Johnson Architecture for nand flash constraint enforcement
US8219776B2 (en) * 2009-09-23 2012-07-10 Lsi Corporation Logical-to-physical address translation for solid state disks
US8868809B2 (en) * 2009-11-30 2014-10-21 Lsi Corporation Interrupt queuing in a media controller architecture
KR101600951B1 (ko) * 2009-05-18 2016-03-08 삼성전자주식회사 고체 상태 드라이브 장치
US7856528B1 (en) * 2009-08-11 2010-12-21 Texas Memory Systems, Inc. Method and apparatus for protecting data using variable size page stripes in a FLASH-based storage system
US8688894B2 (en) * 2009-09-03 2014-04-01 Pioneer Chip Technology Ltd. Page based management of flash storage
US8285946B2 (en) * 2009-12-15 2012-10-09 International Business Machines Corporation Reducing access contention in flash-based memory systems
CN101819821B (zh) * 2010-03-25 2012-08-29 清华大学深圳研究生院 一种固态硬盘动态损耗均衡方法
TWI547872B (zh) * 2010-04-01 2016-09-01 鴻海精密工業股份有限公司 媒體資料播放裝置及其重新啟動方法
JP5559616B2 (ja) * 2010-06-17 2014-07-23 ラピスセミコンダクタ株式会社 半導体メモリ装置
KR20120003283A (ko) * 2010-07-02 2012-01-10 삼성전자주식회사 데이터 저장 장치 및 그것의 배드 블록 관리 방법
TWI435216B (zh) * 2010-09-27 2014-04-21 Silicon Motion Inc 用來進行超區塊管理之方法以及記憶裝置及控制器
TWI425357B (zh) 2010-09-27 2014-02-01 Silicon Motion Inc 用來進行區塊管理之方法以及記憶裝置及控制器
CN102456401B (zh) * 2010-10-26 2015-04-22 群联电子股份有限公司 区块管理方法、存储器控制器与存储器储存装置
CN102479156B (zh) * 2010-11-22 2015-03-11 慧荣科技股份有限公司 用来进行区块管理的方法、记忆装置及其控制器
CN102479154B (zh) * 2010-11-30 2015-03-11 慧荣科技股份有限公司 用来进行超区块管理的方法、记忆装置及其控制器
TWI446345B (zh) 2010-12-31 2014-07-21 Silicon Motion Inc 用來進行區塊管理之方法以及記憶裝置及控制器
US8578208B2 (en) * 2011-01-13 2013-11-05 Micron Technology, Inc. Determining location of error detection data
JP5319723B2 (ja) * 2011-03-24 2013-10-16 株式会社東芝 メモリシステムおよびプログラム
US20120262815A1 (en) * 2011-04-15 2012-10-18 Lsi Corporation Method and system for dynamically expandable software based bad block management
KR20120124285A (ko) * 2011-05-03 2012-11-13 삼성전자주식회사 배드 블록 관리를 위한 방법 및 메모리 시스템
CN103688246A (zh) 2011-05-17 2014-03-26 桑迪士克科技股份有限公司 具有在活跃slc和mlc存储器分区之间分布的小逻辑组的非易失性存储器和方法
US9176864B2 (en) 2011-05-17 2015-11-03 SanDisk Technologies, Inc. Non-volatile memory and method having block management with hot/cold data sorting
US9141528B2 (en) 2011-05-17 2015-09-22 Sandisk Technologies Inc. Tracking and handling of super-hot data in non-volatile memory systems
KR101269557B1 (ko) * 2011-05-20 2013-06-04 연세대학교 산학협력단 반도체 메모리 수리 장치 및 수리 방법
US8543758B2 (en) 2011-05-31 2013-09-24 Micron Technology, Inc. Apparatus including memory channel control circuit and related methods for relaying commands to logical units
US9098399B2 (en) 2011-08-31 2015-08-04 SMART Storage Systems, Inc. Electronic system with storage management mechanism and method of operation thereof
US9021319B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Non-volatile memory management system with load leveling and method of operation thereof
US9063844B2 (en) 2011-09-02 2015-06-23 SMART Storage Systems, Inc. Non-volatile memory management system with time measure mechanism and method of operation thereof
US8700961B2 (en) 2011-12-20 2014-04-15 Sandisk Technologies Inc. Controller and method for virtual LUN assignment for improved memory bank mapping
US9239781B2 (en) * 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
US8924636B2 (en) * 2012-02-23 2014-12-30 Kabushiki Kaisha Toshiba Management information generating method, logical block constructing method, and semiconductor memory device
JP5952036B2 (ja) * 2012-03-13 2016-07-13 株式会社メガチップス 半導体メモリのリユース処理装置、及び半導体メモリ
JP5956791B2 (ja) * 2012-03-13 2016-07-27 株式会社メガチップス 半導体メモリのリユース処理装置、及び半導体メモリ
US9355929B2 (en) 2012-04-25 2016-05-31 Sandisk Technologies Inc. Data storage based upon temperature considerations
US9699263B1 (en) 2012-08-17 2017-07-04 Sandisk Technologies Llc. Automatic read and write acceleration of data accessed by virtual machines
US8891305B2 (en) 2012-08-21 2014-11-18 Micron Technology, Inc. Apparatuses and methods involving accessing distributed sub-blocks of memory cells
US8902670B2 (en) * 2012-08-31 2014-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device
US9507523B1 (en) * 2012-10-12 2016-11-29 Western Digital Technologies, Inc. Methods, devices and systems for variable size logical page management in a solid state drive
US9032244B2 (en) * 2012-11-16 2015-05-12 Microsoft Technology Licensing, Llc Memory segment remapping to address fragmentation
US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
US20140181621A1 (en) * 2012-12-26 2014-06-26 Skymedi Corporation Method of arranging data in a non-volatile memory and a memory control system thereof
US9612948B2 (en) 2012-12-27 2017-04-04 Sandisk Technologies Llc Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device
US9454420B1 (en) 2012-12-31 2016-09-27 Sandisk Technologies Llc Method and system of reading threshold voltage equalization
WO2014109756A1 (en) * 2013-01-11 2014-07-17 Empire Technology Development Llc Page allocation for flash memories
US9123445B2 (en) 2013-01-22 2015-09-01 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
US9214965B2 (en) 2013-02-20 2015-12-15 Sandisk Enterprise Ip Llc Method and system for improving data integrity in non-volatile storage
US9183137B2 (en) 2013-02-27 2015-11-10 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9870830B1 (en) 2013-03-14 2018-01-16 Sandisk Technologies Llc Optimal multilevel sensing for reading data from a storage medium
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9170941B2 (en) 2013-04-05 2015-10-27 Sandisk Enterprises IP LLC Data hardening in a storage system
US9543025B2 (en) 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
US9406362B2 (en) 2013-06-17 2016-08-02 Micron Technology, Inc. Memory tile access and selection patterns
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
US9524235B1 (en) 2013-07-25 2016-12-20 Sandisk Technologies Llc Local hash value generation in non-volatile data storage systems
US9146850B2 (en) 2013-08-01 2015-09-29 SMART Storage Systems, Inc. Data storage system with dynamic read threshold mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9431113B2 (en) 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9639463B1 (en) 2013-08-26 2017-05-02 Sandisk Technologies Llc Heuristic aware garbage collection scheme in storage systems
US9442662B2 (en) 2013-10-18 2016-09-13 Sandisk Technologies Llc Device and method for managing die groups
US9436831B2 (en) 2013-10-30 2016-09-06 Sandisk Technologies Llc Secure erase in a memory device
US9152555B2 (en) 2013-11-15 2015-10-06 Sandisk Enterprise IP LLC. Data management with modular erase in a data storage system
US9703816B2 (en) 2013-11-19 2017-07-11 Sandisk Technologies Llc Method and system for forward reference logging in a persistent datastore
US9520197B2 (en) 2013-11-22 2016-12-13 Sandisk Technologies Llc Adaptive erase of a storage device
US9520162B2 (en) 2013-11-27 2016-12-13 Sandisk Technologies Llc DIMM device controller supervisor
US9582058B2 (en) 2013-11-29 2017-02-28 Sandisk Technologies Llc Power inrush management of storage devices
US9703636B2 (en) 2014-03-01 2017-07-11 Sandisk Technologies Llc Firmware reversion trigger and control
KR102225989B1 (ko) 2014-03-04 2021-03-10 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
US9595352B2 (en) * 2014-03-17 2017-03-14 Seagate Technology Llc Manufacturer self-test for solid-state drives
US9448876B2 (en) 2014-03-19 2016-09-20 Sandisk Technologies Llc Fault detection and prediction in storage devices
US9454448B2 (en) 2014-03-19 2016-09-27 Sandisk Technologies Llc Fault testing in storage devices
US9626399B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Conditional updates for reducing frequency of data modification operations
US9626400B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Compaction of information in tiered data structure
US9697267B2 (en) 2014-04-03 2017-07-04 Sandisk Technologies Llc Methods and systems for performing efficient snapshots in tiered data structures
US20150339223A1 (en) * 2014-05-22 2015-11-26 Kabushiki Kaisha Toshiba Memory system and method
US10114557B2 (en) 2014-05-30 2018-10-30 Sandisk Technologies Llc Identification of hot regions to enhance performance and endurance of a non-volatile storage device
US10162748B2 (en) 2014-05-30 2018-12-25 Sandisk Technologies Llc Prioritizing garbage collection and block allocation based on I/O history for logical address regions
US10372613B2 (en) 2014-05-30 2019-08-06 Sandisk Technologies Llc Using sub-region I/O history to cache repeatedly accessed sub-regions in a non-volatile storage device
US10656842B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Using history of I/O sizes and I/O sequences to trigger coalesced writes in a non-volatile storage device
US10656840B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Real-time I/O pattern recognition to enhance performance and endurance of a storage device
US9703491B2 (en) 2014-05-30 2017-07-11 Sandisk Technologies Llc Using history of unaligned writes to cache data and avoid read-modify-writes in a non-volatile storage device
US10146448B2 (en) 2014-05-30 2018-12-04 Sandisk Technologies Llc Using history of I/O sequences to trigger cached read ahead in a non-volatile storage device
US9652381B2 (en) 2014-06-19 2017-05-16 Sandisk Technologies Llc Sub-block garbage collection
US9632712B2 (en) * 2014-07-02 2017-04-25 Sandisk Technologies Llc System and method of updating metablocks associated with multiple memory dies
US9626289B2 (en) 2014-08-28 2017-04-18 Sandisk Technologies Llc Metalblock relinking to physical blocks of semiconductor memory in adaptive wear leveling based on health
US9443601B2 (en) 2014-09-08 2016-09-13 Sandisk Technologies Llc Holdup capacitor energy harvesting
KR102257031B1 (ko) 2015-03-13 2021-05-27 삼성전자주식회사 반도체 집적 회로 설계 방법
US10289327B2 (en) 2015-06-05 2019-05-14 Western Digital Technologies, Inc. Scheduling scheme(s) for a multi-die storage device
US9875053B2 (en) 2015-06-05 2018-01-23 Western Digital Technologies, Inc. Scheduling scheme(s) for a multi-die storage device
CN105488722B (zh) * 2015-11-30 2019-11-26 布比（北京）网络技术有限公司 基于衍生链的资产数据处理方法及装置
US10126970B2 (en) * 2015-12-11 2018-11-13 Sandisk Technologies Llc Paired metablocks in non-volatile storage device
WO2017170679A1 (ja) * 2016-03-31 2017-10-05 株式会社ｂｉｔＦｌｙｅｒ プライベートノード、プライベートノードにおける処理方法、及びそのためのプログラム
CN106372533B (zh) * 2016-09-14 2020-04-21 中国银联股份有限公司 基于区块链技术的内容存储方法
CN106529924A (zh) * 2016-09-29 2017-03-22 马龙 彩色区块链的管理方法及管理系统
KR20180047329A (ko) * 2016-10-31 2018-05-10 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
KR20180047778A (ko) 2016-11-01 2018-05-10 삼성전자주식회사 단계별 저전력 상태들을 갖는 메모리 장치
CN106844523B (zh) * 2016-12-29 2020-05-08 北京瑞卓喜投科技发展有限公司 顺序型多维拓展的区块链的生成方法及系统
US10725933B2 (en) * 2016-12-30 2020-07-28 Intel Corporation Method and apparatus for redirecting memory access commands sent to unusable memory partitions
US10223022B2 (en) * 2017-01-27 2019-03-05 Western Digital Technologies, Inc. System and method for implementing super word line zones in a memory device
CN106874440B (zh) * 2017-02-07 2019-11-12 杭州秘猿科技有限公司 一种基于sql数据库的区块链状态存储方法
KR102409760B1 (ko) * 2017-03-17 2022-06-17 에스케이하이닉스 주식회사 메모리 시스템
KR102395434B1 (ko) 2017-03-20 2022-05-09 삼성전자주식회사 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템
CN107451011B (zh) * 2017-03-24 2020-12-25 北京瑞卓喜投科技发展有限公司 并行增加区块的区块链的勘误方法及系统
TWI646554B (zh) * 2017-03-28 2019-01-01 慧榮科技股份有限公司 資料儲存裝置以及其操作方法
US10229751B2 (en) 2017-05-01 2019-03-12 Western Digital Technologies, Inc. Storage system and method for bad block recycling
DE102017209381A1 (de) * 2017-06-02 2018-12-06 Bundesdruckerei Gmbh Bidirektional verkettete Blockchain-Struktur
US10649661B2 (en) * 2017-06-26 2020-05-12 Western Digital Technologies, Inc. Dynamically resizing logical storage blocks
TWI641988B (zh) 2017-07-21 2018-11-21 慧榮科技股份有限公司 用來於一記憶裝置中進行編程管理之方法以及記憶裝置及其控制器
TWI617917B (zh) * 2017-08-28 2018-03-11 慧榮科技股份有限公司 用以優化資料儲存裝置之資料儲存方法及其資料儲存裝置
US10977182B2 (en) * 2017-12-01 2021-04-13 Micron Technology, Inc. Logical block mapping based on an offset
US11436154B2 (en) 2017-12-01 2022-09-06 Micron Technology, Inc. Logical block mapping based on an offset
US10635515B2 (en) 2017-12-06 2020-04-28 Sandisk Technologies Llc Recovery of partial memory die
US10445230B2 (en) * 2017-12-08 2019-10-15 Macronix International Co., Ltd. Managing block arrangement of super blocks
KR20190072306A (ko) 2017-12-15 2019-06-25 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
KR20190073125A (ko) * 2017-12-18 2019-06-26 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
US10372355B2 (en) * 2017-12-29 2019-08-06 Micron Technology, Inc. Managing partial superblocks in a NAND device
CN108196795B (zh) * 2017-12-30 2020-09-04 惠龙易通国际物流股份有限公司 一种数据存储方法、设备及计算机存储介质
JP7051484B2 (ja) 2018-02-22 2022-04-11 キオクシア株式会社 半導体メモリ
CN108846749B (zh) * 2018-05-31 2021-09-07 杭州溪塔科技有限公司 一种基于区块链技术的分片化的交易执行系统及方法
TWI664528B (zh) * 2018-06-06 2019-07-01 群聯電子股份有限公司 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置
CN110609795B (zh) * 2018-06-14 2022-11-22 群联电子股份有限公司 存储器管理方法、存储器控制电路单元与存储器存储装置
CN108984645B (zh) * 2018-06-25 2021-02-02 百度在线网络技术（北京）有限公司 区块链处理方法、装置、设备及存储介质
CN109032802A (zh) * 2018-07-26 2018-12-18 国信优易数据有限公司 一种区块链系统和管理方法
KR20200042791A (ko) * 2018-10-16 2020-04-24 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102592803B1 (ko) * 2018-10-31 2023-10-24 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR20200060053A (ko) * 2018-11-22 2020-05-29 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
US11416161B2 (en) 2019-06-28 2022-08-16 Western Digital Technologies, Inc. Zone formation for zoned namespaces
KR20210017481A (ko) 2019-08-08 2021-02-17 에스케이하이닉스 주식회사 컨트롤러 및 컨트롤러의 동작방법
US11282567B2 (en) 2019-08-20 2022-03-22 Micron Technology, Inc. Sequential SLC read optimization
US11281578B2 (en) 2019-08-20 2022-03-22 Micron Technology, Inc. Garbage collection in a memory sub-system during a low battery state
US20210055878A1 (en) * 2019-08-20 2021-02-25 Micron Technology, Inc. Data compaction within the same plane of a memory component
US11726869B2 (en) 2019-08-20 2023-08-15 Micron Technology, Inc. Performing error control operation on memory component for garbage collection
US11281392B2 (en) 2019-08-28 2022-03-22 Micron Technology, Inc. Garbage collection in a memory component using an adjusted parameter
CN112530494A (zh) * 2019-09-17 2021-03-19 硅存储技术股份有限公司 具有存储的索引信息的非易失性存储器设备
US11640259B2 (en) * 2020-05-21 2023-05-02 Western Digital Technologies, Inc. Use of surplus erase block pairs in super block formation
KR20220165074A (ko) * 2021-06-07 2022-12-14 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
WO2023050147A1 (zh) * 2021-09-29 2023-04-06 长江存储科技有限责任公司 用于存储器的数据保护方法及其存储装置
CN115687171B (zh) * 2022-10-26 2023-06-06 深圳三地一芯电子股份有限公司 闪存块绑定方法、装置、设备及存储介质

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5428621A (en) * 1992-09-21 1995-06-27 Sundisk Corporation Latent defect handling in EEPROM devices
JP3105092B2 (ja) * 1992-10-06 2000-10-30 株式会社東芝 半導体メモリ装置
US5835935A (en) * 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
US5978808A (en) * 1995-12-27 1999-11-02 Intel Corporation Virtual small block file manager for flash memory array
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
CN1249585C (zh) * 1997-12-16 2006-04-05 Tdk株式会社 闪速存储器系统
CN1249586C (zh) * 1997-12-22 2006-04-05 Tdk株式会社 闪速存储器系统
JP3734620B2 (ja) * 1998-06-24 2006-01-11 沖電気工業株式会社 半導体ディスク装置
US6260156B1 (en) * 1998-12-04 2001-07-10 Datalight, Inc. Method and system for managing bad areas in flash memory
GB9903490D0 (en) 1999-02-17 1999-04-07 Memory Corp Plc Memory system
KR100330164B1 (ko) * 1999-04-27 2002-03-28 윤종용 무효 블록들을 가지는 복수의 플래시 메모리들을 동시에 프로그램하는 방법
US6742078B1 (en) * 1999-10-05 2004-05-25 Feiya Technology Corp. Management, data link structure and calculating method for flash memory
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
DE10134229A1 (de) * 2000-08-17 2002-02-28 Ibm Verfahren und System zum Ermitteln von Abweichungen in Datentabellen
JP3699890B2 (ja) * 2000-08-30 2005-09-28 シャープ株式会社 不揮発性半導体記憶装置
US6574705B1 (en) * 2000-11-16 2003-06-03 International Business Machines Corporation Data processing system and method including a logical volume manager for storing logical volume data
US6763424B2 (en) * 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
JP4220690B2 (ja) * 2001-07-05 2009-02-04 Ｔｄｋ株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム及びフラッシュメモリの制御方法
JP4248772B2 (ja) * 2001-07-05 2009-04-02 Ｔｄｋ株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム及びフラッシュメモリの制御方法
JP2003058417A (ja) * 2001-08-21 2003-02-28 Matsushita Electric Ind Co Ltd 記憶装置
GB0123412D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Memory system sectors
DE10236796B4 (de) * 2002-08-08 2004-12-02 Christian Dr. Scheideler Verfahren und Anordnung zur randomisierten Datenspeicherung in Speichernetzwerken und/oder einem Intranet und/oder dem Internet sowie ein entsprechendes Computerprogramm-Erzeugnis und ein entsprechendes computerlesbares Speichermedium
US6901498B2 (en) * 2002-12-09 2005-05-31 Sandisk Corporation Zone boundary adjustment for defects in non-volatile memories
US7478096B2 (en) * 2003-02-26 2009-01-13 Burnside Acquisition, Llc History preservation in a computer storage system
JP2004265162A (ja) * 2003-03-03 2004-09-24 Renesas Technology Corp 記憶装置およびアドレス管理方法
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques

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