ATE445167T1 - Halbzeug für einen sensor zum messen eines magnetischen feldes - Google Patents

Halbzeug für einen sensor zum messen eines magnetischen feldes

Info

Publication number
ATE445167T1
ATE445167T1 AT02733067T AT02733067T ATE445167T1 AT E445167 T1 ATE445167 T1 AT E445167T1 AT 02733067 T AT02733067 T AT 02733067T AT 02733067 T AT02733067 T AT 02733067T AT E445167 T1 ATE445167 T1 AT E445167T1
Authority
AT
Austria
Prior art keywords
magnetic
magnetic field
semi
measuring
magnetization
Prior art date
Application number
AT02733067T
Other languages
English (en)
Inventor
Zon Joannes Van
Jacobus Ruigrok
Carsten Giebeler
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE445167T1 publication Critical patent/ATE445167T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08Measuring electromagnetic field characteristics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Thin Magnetic Films (AREA)
AT02733067T 2001-06-01 2002-05-29 Halbzeug für einen sensor zum messen eines magnetischen feldes ATE445167T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01202136 2001-06-01
PCT/IB2002/001916 WO2002099451A2 (en) 2001-06-01 2002-05-29 Semimanufacture for a sensor for measuring a magnetic field

Publications (1)

Publication Number Publication Date
ATE445167T1 true ATE445167T1 (de) 2009-10-15

Family

ID=8180421

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02733067T ATE445167T1 (de) 2001-06-01 2002-05-29 Halbzeug für einen sensor zum messen eines magnetischen feldes

Country Status (8)

Country Link
US (1) US6946834B2 (de)
EP (1) EP1399748B1 (de)
JP (1) JP4630544B2 (de)
KR (1) KR20030018065A (de)
CN (1) CN1322333C (de)
AT (1) ATE445167T1 (de)
DE (1) DE60233940D1 (de)
WO (1) WO2002099451A2 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10162752A1 (de) * 2001-12-20 2003-07-03 Philips Intellectual Property Magnetoresistiver Sensor
US7259545B2 (en) * 2003-02-11 2007-08-21 Allegro Microsystems, Inc. Integrated sensor
JP4259937B2 (ja) * 2003-06-30 2009-04-30 アルプス電気株式会社 角度検出センサ
EP1729142B1 (de) * 2004-03-23 2014-12-03 Murata Manufacturing Co., Ltd. Langer magnetischer sensor
US7135859B2 (en) * 2004-04-06 2006-11-14 Murugesan Sethu Rotary and angular position sensing
US7112957B2 (en) * 2004-06-16 2006-09-26 Honeywell International Inc. GMR sensor with flux concentrators
JP4614061B2 (ja) * 2004-09-28 2011-01-19 ヤマハ株式会社 巨大磁気抵抗効果素子を用いた磁気センサ及び同磁気センサの製造方法
US7777607B2 (en) * 2004-10-12 2010-08-17 Allegro Microsystems, Inc. Resistor having a predetermined temperature coefficient
US20100001723A1 (en) * 2004-12-28 2010-01-07 Koninklijke Philips Electronics, N.V. Bridge type sensor with tunable characteristic
DE102005047413B8 (de) * 2005-02-23 2012-06-06 Infineon Technologies Ag Magnetfeldsensorelement und Verfahren zum Durchführen eines On-Wafer-Funktionstests, sowie Verfahren zur Herstellung von Magnetfeldsensorelementen und Verfahren zur Herstellung von Magnetfeldsensorelementen mit On-Wafer-Funktionstest
JP2006253411A (ja) * 2005-03-10 2006-09-21 Yamaha Corp 磁気センサ
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
WO2007096806A2 (en) 2006-02-23 2007-08-30 Nxp B.V. Magnetoresistive sensor device and method of fabricating such magnetoresistive sensor device
JP4833691B2 (ja) * 2006-03-03 2011-12-07 株式会社リコー 磁気センサ及びその製造方法
JP4790448B2 (ja) * 2006-03-03 2011-10-12 株式会社リコー 磁気抵抗効果素子及びその形成方法
US7646569B2 (en) * 2006-07-20 2010-01-12 Hitachi Global Storage Technologies Netherlands B.V. Pinned layer in magnetoresistive sensor
US8715776B2 (en) * 2007-09-28 2014-05-06 Headway Technologies, Inc. Method for providing AFM exchange pinning fields in multiple directions on same substrate
US7795862B2 (en) 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
US7816905B2 (en) * 2008-06-02 2010-10-19 Allegro Microsystems, Inc. Arrangements for a current sensing circuit and integrated current sensor
JP4807535B2 (ja) * 2009-07-31 2011-11-02 Tdk株式会社 磁気センサ
CN102298126B (zh) * 2011-01-17 2013-03-13 江苏多维科技有限公司 独立封装的桥式磁场传感器
US8890266B2 (en) * 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
JP5809478B2 (ja) * 2011-08-02 2015-11-11 アルプス電気株式会社 磁気センサ
JP5802565B2 (ja) * 2012-01-18 2015-10-28 アルプス電気株式会社 磁気センサ
JP5899012B2 (ja) * 2012-03-14 2016-04-06 アルプス電気株式会社 磁気センサ
US9164155B2 (en) 2013-01-29 2015-10-20 Infineon Technologies Ag Systems and methods for offset reduction in sensor devices and systems
US9341684B2 (en) 2013-03-13 2016-05-17 Plures Technologies, Inc. Magnetic field sensing apparatus and methods
JP6216598B2 (ja) * 2013-10-07 2017-10-18 大同特殊鋼株式会社 単位素子対及び薄膜磁気センサ
US9605983B2 (en) * 2014-06-09 2017-03-28 Infineon Technologies Ag Sensor device and sensor arrangement
US9823168B2 (en) 2014-06-27 2017-11-21 Infineon Technologies Ag Auto tire localization systems and methods utilizing a TPMS angular position index
DE102014116953B4 (de) * 2014-11-19 2022-06-30 Sensitec Gmbh Verfahren und Vorrichtung zur Herstellung einer Magnetfeldsensorvorrichtung, sowie diesbezüglicheMagnetfeldsensorvorrichtung
JP2022066240A (ja) * 2017-05-19 2022-04-28 旭化成エレクトロニクス株式会社 磁気センサ
JP7097228B2 (ja) * 2017-05-19 2022-07-07 旭化成エレクトロニクス株式会社 磁気センサ
JP6699635B2 (ja) * 2017-08-18 2020-05-27 Tdk株式会社 磁気センサ
US10794968B2 (en) * 2017-08-24 2020-10-06 Everspin Technologies, Inc. Magnetic field sensor and method of manufacture
KR101965510B1 (ko) * 2017-11-16 2019-08-07 재단법인대구경북과학기술원 거대자기저항 센서
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
CN109556539B (zh) * 2018-12-29 2021-07-02 上海山南勘测设计有限公司 一种基于盾构管片测定的大坡度隧道轴线检测方法
JP7058630B2 (ja) * 2019-10-01 2022-04-22 Tdk株式会社 磁気センサ装置
JP7279834B2 (ja) * 2019-10-01 2023-05-23 Tdk株式会社 磁気センサ装置
US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element
JP7421462B2 (ja) * 2020-10-16 2024-01-24 株式会社東芝 磁気センサ及び検査装置
JP7414703B2 (ja) * 2020-12-14 2024-01-16 株式会社東芝 磁気センサ及び検査装置
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor
US11994541B2 (en) 2022-04-15 2024-05-28 Allegro Microsystems, Llc Current sensor assemblies for low currents

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06130088A (ja) * 1992-10-15 1994-05-13 Fujitsu Ltd 電流センサ
US5617071A (en) 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
JPH0894728A (ja) * 1994-09-21 1996-04-12 Sony Corp 磁界センサーと磁界センサーの製造方法
US5561368A (en) 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
JP3886589B2 (ja) * 1997-03-07 2007-02-28 アルプス電気株式会社 巨大磁気抵抗効果素子センサ
JP3755291B2 (ja) * 1998-04-02 2006-03-15 Tdk株式会社 薄膜磁気ヘッドの製造方法
WO2000010023A1 (en) 1998-08-14 2000-02-24 Koninklijke Philips Electronics N.V. Magnetic field sensor comprising a spin tunneling junction element
DE60025146T2 (de) * 1999-06-18 2006-08-24 Koninklijke Philips Electronics N.V. Herstellungsverfahren für eine magnetische fühleranordnung
US6501678B1 (en) 1999-06-18 2002-12-31 Koninklijke Philips Electronics N.V. Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems
JP2001141514A (ja) * 1999-11-16 2001-05-25 Matsushita Electric Ind Co Ltd 磁気抵抗素子
JP3462832B2 (ja) * 2000-04-06 2003-11-05 株式会社日立製作所 磁気抵抗センサ並びにこれを用いた磁気ヘッド及び磁気記録再生装置

Also Published As

Publication number Publication date
WO2002099451A2 (en) 2002-12-12
JP4630544B2 (ja) 2011-02-09
US6946834B2 (en) 2005-09-20
US20020180433A1 (en) 2002-12-05
EP1399748B1 (de) 2009-10-07
DE60233940D1 (de) 2009-11-19
WO2002099451A3 (en) 2003-04-17
EP1399748A2 (de) 2004-03-24
JP2004533120A (ja) 2004-10-28
KR20030018065A (ko) 2003-03-04
CN1322333C (zh) 2007-06-20
CN1513120A (zh) 2004-07-14

Similar Documents

Publication Publication Date Title
ATE445167T1 (de) Halbzeug für einen sensor zum messen eines magnetischen feldes
JP3623367B2 (ja) 巨大磁気抵抗効果素子を備えたポテンショメータ
US7589528B2 (en) Magnetic sensor formed of magnetoresistance effect elements
US10613161B2 (en) Magnetic sensor including two bias magnetic field generation units for generating stable bias magnetic field
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
WO2004074855A3 (en) Magnetic field sensor
CN105891739B (zh) 磁传感器
KR960018612A (ko) 자계 센서, 브리지 회로 자계 센서 및 그 제조 방법
ATE552488T1 (de) Gmr-biosensor mit erhöhter empfindlichkeit
EP1296331A3 (de) MRAM Leseverfahren
WO2004029973A3 (en) Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element
MY116219A (en) Multilayer magnetoresistive sensor.
WO1995010020A1 (en) Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor
TW200725880A (en) Semiconductor piezoresistive sensor and operation method thereof
EP0800161A3 (de) Magnetoresistiver Spinventil-Magnetkopf und Herstellungsverfahren und Magnetspeichergerät
EP1298669A3 (de) Magnetische Speicheranordnung
WO2017173992A1 (zh) 一种无需置位/复位装置的各向异性磁电阻amr传感器
JP2001345498A (ja) 磁気センサ及び同磁気センサの製造方法
CA2447711A1 (en) Azimuth meter
EP0814519A3 (de) Element mit magnetoresistivem Effekt, ihres Herstellungsverfahren und Magnetkopf daraus
JP7022764B2 (ja) 磁界印加バイアス膜ならびにこれを用いた磁気検出素子および磁気検出装置
DE60307523D1 (de) Verfahren zum messen der magnetostriktion in magnetowiderstandselementen
DE60139682D1 (de) Magnetische mehrschichtstruktur mit verbessertem magnetfeldbereich
GB2356059A (en) Multilayer magnetoresistive sensor/bridge circuit arrangement
ATE533031T1 (de) Magnetoresistiver sensor

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties