ATE430371T1 - Variable integrierte induktivität - Google Patents

Variable integrierte induktivität

Info

Publication number
ATE430371T1
ATE430371T1 AT06792885T AT06792885T ATE430371T1 AT E430371 T1 ATE430371 T1 AT E430371T1 AT 06792885 T AT06792885 T AT 06792885T AT 06792885 T AT06792885 T AT 06792885T AT E430371 T1 ATE430371 T1 AT E430371T1
Authority
AT
Austria
Prior art keywords
variable integrated
integrated inductor
inductor
secondary inductors
switched
Prior art date
Application number
AT06792885T
Other languages
English (en)
Inventor
Thomas Mattsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Application granted granted Critical
Publication of ATE430371T1 publication Critical patent/ATE430371T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Networks Using Active Elements (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Transceivers (AREA)
  • Filters And Equalizers (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT06792885T 2005-08-29 2006-08-18 Variable integrierte induktivität ATE430371T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/214,076 US7432794B2 (en) 2004-08-16 2005-08-29 Variable integrated inductor
PCT/EP2006/065437 WO2007025875A1 (en) 2005-08-29 2006-08-18 Variable integrated inductor

Publications (1)

Publication Number Publication Date
ATE430371T1 true ATE430371T1 (de) 2009-05-15

Family

ID=37400885

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06792885T ATE430371T1 (de) 2005-08-29 2006-08-18 Variable integrierte induktivität

Country Status (15)

Country Link
US (1) US7432794B2 (de)
EP (1) EP1929486B1 (de)
JP (1) JP5154419B2 (de)
KR (1) KR101256697B1 (de)
CN (1) CN101253585B (de)
AT (1) ATE430371T1 (de)
BR (1) BRPI0615402B1 (de)
CA (1) CA2620623C (de)
DE (1) DE602006006584D1 (de)
HK (1) HK1120654A1 (de)
MY (1) MY140388A (de)
PL (1) PL1929486T3 (de)
RU (1) RU2416132C2 (de)
TW (1) TWI431927B (de)
WO (1) WO2007025875A1 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120735A (ja) * 2004-10-19 2006-05-11 Matsushita Electric Ind Co Ltd インダクタ装置
KR100579136B1 (ko) * 2004-12-16 2006-05-12 한국전자통신연구원 가변 인덕턴스를 갖는 트랜스포머
FI20055402A0 (fi) * 2005-07-11 2005-07-11 Nokia Corp Induktorilaite monikaistaista radiotaajuista toimintaa varten
US8044756B2 (en) * 2006-07-07 2011-10-25 St-Ericsson Sa Programmable inductor
DE102006035204B4 (de) * 2006-07-29 2009-10-15 Atmel Duisburg Gmbh Monolithisch integrierbare Schaltungsanordnung
CN101188159B (zh) * 2006-11-24 2011-01-12 阎跃军 分段可调电感器
US8237531B2 (en) * 2007-12-31 2012-08-07 Globalfoundries Singapore Pte. Ltd. Tunable high quality factor inductor
US8018312B2 (en) * 2008-02-12 2011-09-13 International Business Machines Corporation Inductor and method of operating an inductor by combining primary and secondary coils with coupling structures
GB2462885B (en) * 2008-08-29 2013-03-27 Cambridge Silicon Radio Ltd Inductor structure
EP2273613A1 (de) * 2009-07-07 2011-01-12 Nxp B.V. Layout einer magnetischen Abschirmung, Halbleiterbauelement und Anwendung
EP2293309A1 (de) * 2009-09-08 2011-03-09 STmicroelectronics SA Integrierte induktive Vorrichtung
KR20120088692A (ko) * 2009-09-29 2012-08-08 텔레호낙티에볼라게트 엘엠 에릭슨(피유비엘) 통신 네트워크에서 사용하기 위한 발진기, 주파수 합성기 및 네트워크 노드
GB0918221D0 (en) 2009-10-16 2009-12-02 Cambridge Silicon Radio Ltd Inductor structure
EP2564403B1 (de) 2010-04-30 2016-09-21 Powermat Technologies Ltd. Vorrichtung und verfahren für die induktive übertragung über einen ausgedehnten bereich
EP2421011A1 (de) * 2010-08-19 2012-02-22 Nxp B.V. Symmetrischer Induktor
US8963674B2 (en) * 2010-12-20 2015-02-24 Mediatek Singapore Pte. Ltd. Tunable inductor
WO2012095850A1 (en) * 2011-01-10 2012-07-19 Powermat Technologies Ltd. System for transferring power inductively to items within a container
US20120244802A1 (en) * 2011-03-24 2012-09-27 Lei Feng On chip inductor
WO2013043334A1 (en) * 2011-09-23 2013-03-28 Rambus Inc. Electronic circuits using coupled multi-inductors
US8576039B2 (en) * 2011-12-06 2013-11-05 Cambridge Silicon Radio Limited Inductor structure
EP2648193B1 (de) 2012-04-03 2015-07-29 Telefonaktiebolaget L M Ericsson (publ) Induktor-Layout, und spannungsgesteuertes Oszillator- (VCO) -System
US9608577B2 (en) * 2012-09-23 2017-03-28 Dsp Group Ltd. Radio frequency front end module circuit incorporating an efficient high linearity power amplifier
WO2014078455A1 (en) * 2012-11-13 2014-05-22 Spectra7 Microsystems Ltd Method and system for signal dynamic range improvement for frequency-division duplex communication systems
KR101351855B1 (ko) 2012-12-03 2014-01-22 주식회사 피에스텍 고전력용 가변 인덕터와 이를 사용한 필터
US8860521B2 (en) * 2012-12-19 2014-10-14 Intel IP Corporation Variable inductor for LC oscillator
US10115661B2 (en) 2013-02-08 2018-10-30 Qualcomm Incorporated Substrate-less discrete coupled inductor structure
US9899133B2 (en) 2013-08-01 2018-02-20 Qorvo Us, Inc. Advanced 3D inductor structures with confined magnetic field
US9685928B2 (en) 2013-08-01 2017-06-20 Qorvo Us, Inc. Interference rejection RF filters
US9825656B2 (en) 2013-08-01 2017-11-21 Qorvo Us, Inc. Weakly coupled tunable RF transmitter architecture
US9628045B2 (en) 2013-08-01 2017-04-18 Qorvo Us, Inc. Cooperative tunable RF filters
WO2014145633A1 (en) 2013-03-15 2014-09-18 Rf Micro Devices, Inc. Weakly coupled based harmonic rejection filter for feedback linearization power amplifier
US9755671B2 (en) 2013-08-01 2017-09-05 Qorvo Us, Inc. VSWR detector for a tunable filter structure
US9705478B2 (en) 2013-08-01 2017-07-11 Qorvo Us, Inc. Weakly coupled tunable RF receiver architecture
US9859863B2 (en) 2013-03-15 2018-01-02 Qorvo Us, Inc. RF filter structure for antenna diversity and beam forming
US9780756B2 (en) 2013-08-01 2017-10-03 Qorvo Us, Inc. Calibration for a tunable RF filter structure
US9444417B2 (en) 2013-03-15 2016-09-13 Qorvo Us, Inc. Weakly coupled RF network based power amplifier architecture
US9484879B2 (en) 2013-06-06 2016-11-01 Qorvo Us, Inc. Nonlinear capacitance linearization
US9871499B2 (en) 2013-03-15 2018-01-16 Qorvo Us, Inc. Multi-band impedance tuners using weakly-coupled LC resonators
US9774311B2 (en) 2013-03-15 2017-09-26 Qorvo Us, Inc. Filtering characteristic adjustments of weakly coupled tunable RF filters
US9966981B2 (en) 2013-06-06 2018-05-08 Qorvo Us, Inc. Passive acoustic resonator based RF receiver
US9705542B2 (en) 2013-06-06 2017-07-11 Qorvo Us, Inc. Reconfigurable RF filter
US9780817B2 (en) 2013-06-06 2017-10-03 Qorvo Us, Inc. RX shunt switching element-based RF front-end circuit
US9800282B2 (en) 2013-06-06 2017-10-24 Qorvo Us, Inc. Passive voltage-gain network
US9172353B2 (en) 2013-10-09 2015-10-27 Analog Devices, Inc. Programmable filter
ES2637119T3 (es) 2013-10-16 2017-10-10 Telefonaktiebolaget Lm Ericsson (Publ) Disposición, transceptor, procedimiento y programa informático de inductor sintonizable
EP2863429B1 (de) 2013-10-16 2017-06-14 Telefonaktiebolaget LM Ericsson (publ) Abstimmbare Induktoranordnung, Sender-Empfänger, Verfahren und Computerprogramm
US9276616B2 (en) * 2014-01-10 2016-03-01 Qualcomm Technologies International, Ltd. Integrated circuit chip inductor configuration
US9543068B2 (en) * 2014-06-17 2017-01-10 Qualcomm Technologies International, Ltd. Inductor structure and application thereof
US20160125995A1 (en) * 2014-10-31 2016-05-05 Qualcomm Incorporated Array of interleaved 8-shaped transformers with high isolation between adjacent elements
TWI622068B (zh) * 2015-02-02 2018-04-21 瑞昱半導體股份有限公司 積體電感結構
CN105990322B (zh) * 2015-02-06 2019-03-15 瑞昱半导体股份有限公司 积体电感结构
TWI584316B (zh) * 2015-05-20 2017-05-21 瑞昱半導體股份有限公司 電感裝置
US9543892B1 (en) 2015-07-16 2017-01-10 Qualcomm Incorporated Overlapping uncoupled inductors for low-cost multi-frequency voltage-controlled oscillators
US10796835B2 (en) 2015-08-24 2020-10-06 Qorvo Us, Inc. Stacked laminate inductors for high module volume utilization and performance-cost-size-processing-time tradeoff
US10692645B2 (en) * 2016-03-23 2020-06-23 Qorvo Us, Inc. Coupled inductor structures
WO2018079134A1 (ja) 2016-10-31 2018-05-03 株式会社江口高周波 リアクトル
US11139238B2 (en) 2016-12-07 2021-10-05 Qorvo Us, Inc. High Q factor inductor structure
CN108616218A (zh) * 2016-12-13 2018-10-02 湖南格兰德芯微电子有限公司 射频电感变换器
CN110494939B (zh) * 2017-04-10 2021-07-30 瑞典爱立信有限公司 集成变压器
TWI647716B (zh) * 2017-12-26 2019-01-11 國家中山科學研究院 Variable inductor
US11552594B2 (en) * 2018-03-30 2023-01-10 Intel Corporation Oscillator frequency range extension using switched inductor
CN108777565B (zh) * 2018-06-04 2022-08-09 成都仕芯半导体有限公司 电感耦合式谐振器及其构成的压控振荡器
TWI666662B (zh) 2018-06-20 2019-07-21 瑞昱半導體股份有限公司 可變電感裝置
CN110660556B (zh) * 2018-06-28 2021-11-12 瑞昱半导体股份有限公司 可变电感装置
CN109361831A (zh) * 2018-10-31 2019-02-19 宁波环球广电科技有限公司 高精度多频带电控均衡电路
CN110783079B (zh) * 2019-11-08 2021-11-02 展讯通信（上海）有限公司 一种电感结构
US10867735B1 (en) * 2020-03-06 2020-12-15 Inphi Corporation Inductors with compensated electromagnetic coupling
US11652444B2 (en) 2021-09-20 2023-05-16 Apple Inc. Inductor topology for phase noise reduction

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB299731A (en) * 1927-10-28 1930-01-23 British Thomson Houston Co Ltd Improvements relating to variable inductances
US4701732A (en) * 1986-12-16 1987-10-20 Hughes Aircraft Company Fast tuning RF network inductor
US4816784A (en) * 1988-01-19 1989-03-28 Northern Telecom Limited Balanced planar transformers
US5585766A (en) * 1994-10-27 1996-12-17 Applied Materials, Inc. Electrically tuned matching networks using adjustable inductance elements
JPH08162331A (ja) * 1994-12-05 1996-06-21 Hitachi Ltd 可変インダクタ及びそれを用いた半導体集積回路
AU3597897A (en) 1996-07-29 1998-02-20 Motorola, Inc. Low radiation planar inductor/transformer and method
EP0862214A1 (de) * 1997-02-28 1998-09-02 TELEFONAKTIEBOLAGET L M ERICSSON (publ) Integrierte Schaltung mit einer Planar-Induktivität
JP2771525B2 (ja) * 1997-03-28 1998-07-02 株式会社日立製作所 表示装置及び表示部駆動用回路
US5872489A (en) * 1997-04-28 1999-02-16 Rockwell Science Center, Llc Integrated tunable inductance network and method
JP3250503B2 (ja) * 1997-11-11 2002-01-28 株式会社村田製作所 可変インダクタ素子
US5912596A (en) * 1998-01-26 1999-06-15 International Business Machines Corporation Apparatus and method for frequency tuning an LC oscillator in a integrated clock circuit
US5952893A (en) * 1998-03-06 1999-09-14 International Business Machines Corporation Integrated circuit inductors for use with electronic oscillators
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
US6255913B1 (en) 1999-10-04 2001-07-03 Agere Systems Guardian Corp. Variable frequency oscillator circuit
TW502264B (en) * 2000-08-26 2002-09-11 Samsung Electronics Co Ltd RF matching unit
US6437653B1 (en) 2000-09-28 2002-08-20 Sun Microsystems, Inc. Method and apparatus for providing a variable inductor on a semiconductor chip
US6549096B2 (en) 2001-03-19 2003-04-15 International Business Machines Corporation Switched inductor/varactor tuning circuit having a variable integrated inductor
US6577219B2 (en) * 2001-06-29 2003-06-10 Koninklijke Philips Electronics N.V. Multiple-interleaved integrated circuit transformer
JP2003124743A (ja) * 2001-10-16 2003-04-25 Oki Electric Ind Co Ltd 電圧制御発振回路
US6842101B2 (en) * 2002-01-08 2005-01-11 Eagle Comtronics, Inc. Tunable inductor
DE10233980A1 (de) 2002-07-25 2004-02-12 Philips Intellectual Property & Standards Gmbh Planarinduktivität
JP2005085701A (ja) * 2003-09-10 2005-03-31 Matsushita Electric Ind Co Ltd 偏向ヨーク及び陰極線管装置
US7460001B2 (en) * 2003-09-25 2008-12-02 Qualcomm Incorporated Variable inductor for integrated circuit and printed circuit board

Also Published As

Publication number Publication date
KR20080039464A (ko) 2008-05-07
RU2008112129A (ru) 2009-10-10
EP1929486B1 (de) 2009-04-29
MY140388A (en) 2009-12-31
EP1929486A1 (de) 2008-06-11
CA2620623C (en) 2015-02-17
PL1929486T3 (pl) 2009-09-30
CA2620623A1 (en) 2007-03-08
DE602006006584D1 (de) 2009-06-10
HK1120654A1 (en) 2009-04-03
US20060033602A1 (en) 2006-02-16
JP5154419B2 (ja) 2013-02-27
RU2416132C2 (ru) 2011-04-10
CN101253585A (zh) 2008-08-27
KR101256697B1 (ko) 2013-04-19
CN101253585B (zh) 2011-01-19
TWI431927B (zh) 2014-03-21
JP2009506562A (ja) 2009-02-12
BRPI0615402A2 (pt) 2012-12-04
US7432794B2 (en) 2008-10-07
WO2007025875A1 (en) 2007-03-08
TW200713794A (en) 2007-04-01
BRPI0615402B1 (pt) 2018-05-29

Similar Documents

Publication Publication Date Title
ATE430371T1 (de) Variable integrierte induktivität
US9634610B2 (en) 60 GHz wideband class E/F2 power amplifier
CN104242829B (zh) 与基于多谐波近似的功率放大器效率相关的电路和方法
CA2595944A1 (en) Two stage microwave class e power amplifier
JP2010537453A (ja) チューナブルインピーダンス整合回路
Yang et al. Class E power amplifiers using high-Q inductors for loosely coupled wireless power transfer system
US10536113B2 (en) Variable gain power amplifiers
CN109075747A (zh) 放大器
US10326491B2 (en) Transceiving device
US8497744B1 (en) Lattice network for power amplifier output matching
KR101176615B1 (ko) 초 광대역의 신호 생성기
WO2008030303A3 (en) Amplifier feedback and bias configuration
Suvarna et al. Transformer-based tunable matching network design techniques in 40-nm CMOS
JP6058518B2 (ja) 小型無線送信装置
Kim et al. A fully integrated CMOS RF power amplifier with tunable matching network for GSM/EDGE dual-mode application
Jeong et al. Optimized ultralow-power amplifier for OOK transmitter with shaped voltage drive
Xu Merging of RF oscillator and power amplifier to enable fully integrated transmitters for Internet-of-Things
Li et al. Switchless matching networks for dual-band class-E power amplifiers
Niotaki On the Impact of Rectifier Topologies on Rectennas performance
Jain et al. Wideband Class-B RF Power Amplifier Circuit Design Using CCMOS Pair
Madtha et al. Design of MOS RF Power Amplifier for WLAN
Schmitz et al. A highly linear, differential gyrator in 65nm CMOS for reconfigurable GHz applications
Hsu et al. High-Power Oscillator and High-Efficiency Rectifier for 900-MHz Wireless Power Transfer System With Minimal Components
Yoo et al. A Fully integrated 2.4/3.4 GHz dual-band CMOS power amplifier with variable inductor
Du et al. Analysis on maximum operating frequency of subharmonic class-E amplifier at any duty ratio

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties