EP2293309A1 - Integrierte induktive Vorrichtung - Google Patents

Integrierte induktive Vorrichtung Download PDF

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Publication number
EP2293309A1
EP2293309A1 EP10174810A EP10174810A EP2293309A1 EP 2293309 A1 EP2293309 A1 EP 2293309A1 EP 10174810 A EP10174810 A EP 10174810A EP 10174810 A EP10174810 A EP 10174810A EP 2293309 A1 EP2293309 A1 EP 2293309A1
Authority
EP
European Patent Office
Prior art keywords
inductive device
integrated
axis
central
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10174810A
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English (en)
French (fr)
Inventor
Frédéric Gianesello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of EP2293309A1 publication Critical patent/EP2293309A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/346—Preventing or reducing leakage fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate

Definitions

  • the invention relates to integrated circuits, including integrated inductive devices and in particular those made in voltage-controlled oscillators of wireless communication devices.
  • the inductive devices integrated in the electronic circuits are devices that comprise a plurality of coils, called "turns". But these turns induce electromagnetic fields in the neighboring areas of the inductive device and disrupt the operation of components that are in the near vicinity of the inductive device.
  • inductive devices must be integrated into circuits that are increasingly miniaturized.
  • inductive devices having a sufficiently high inductance and which generate the lowest possible electromagnetic fields in order to reduce the electromagnetic disturbances in the vicinity of the inductive device.
  • US patent application can be cited US 2005/0195063 , which discloses an integrated inductive device comprising two coplanar turns mutually coupled so as to form substantially an eight with a high loop and a low loop, said turns being substantially symmetrical with respect to a horizontal axis of the inductor.
  • this inductive device comprises asymmetry which causes non-homogeneity of the electromagnetic fields induced in the vicinity of the inductive device. This inductive device also does not sufficiently reduce the electromagnetic fields induced.
  • an integrated inductive device for reducing the levels of coupling with the environment, that is to say to reduce the electromagnetic fields induced in the vicinity of this inductive device, while maintaining a small surface area. for the integrated inductive device considered.
  • an integrated inductive device comprising a central turn disposed between two outer turns mutually coupled to the central turn, so as to form two substantially eight-shaped patterns having a common portion corresponding to said central turn.
  • This device makes it possible to reduce the levels of coupling with the environment, in particular thanks to the central coil which generates an induced electromagnetic field opposed to the electromagnetic fields induced by the two outer turns.
  • Such a device also makes it possible to obtain a sufficiently small external diameter, this external diameter being for example between 150 and 400 micrometers.
  • the central coil is integrally inserted between the outer turns.
  • This arrangement of the turns makes it possible to improve the homogeneity of the induced electromagnetic field generated in the neighboring zones of the inductive device. Thus, it prevents the creation of a large induced electromagnetic field in a preferred area adjacent to the inductive device.
  • the device may also include an axis of symmetry located in the plane of the device.
  • an inductive device which is substantially perfectly symmetrical (with manufacturing tolerances) with respect to an axis of the device, which improves the homogeneity of the electromagnetic field induced at the periphery of this device. Furthermore, an inductive device that has a substantially perfect symmetry facilitates its manufacture and promote its integration into an electronic circuit.
  • the device comprises an additional axis located in the plane of the device and perpendicular to said axis of symmetry of the device, each outer turn being substantially symmetrical with respect to the additional axis.
  • the central turn is open and symmetrical with respect to said axis of symmetry and the device comprises two feed means connected to the central turn in the vicinity of its opening.
  • An opening made at the central turn allows free access to the midpoint of the inductive device.
  • the central turn can be vis-à-vis all the outer turns.
  • the three turns of the inductor have substantially the same external diameter, which promotes on the one hand, the homogeneity of the electromagnetic field induced, and on the other hand, improves the reduction of coupling levels.
  • an integrated circuit comprising an integrated inductive device as defined above.
  • a voltage controlled oscillator comprising an integrated circuit provided with an integrated inductive device as defined above.
  • a wireless communication apparatus comprising a voltage controlled oscillator as defined above.
  • an inductive device integrated in a voltage-controlled oscillator in order to reduce the electromagnetic fields induced coming, for example, from a power amplifier located in the vicinity of the voltage-controlled oscillator and which are capable of to disturb the operation of the voltage controlled oscillator.
  • Such integrated inductive device makes it possible to improve the output signal delivered by the voltage-controlled oscillator when the latter is placed in an environment with strong electromagnetic disturbances.
  • FIG. 1 schematically an embodiment of an integrated inductive device 1 intended to be integrated in an integrated circuit.
  • the integrated inductive device comprises a central turn 2 and two outer turns 3, 4.
  • the inductive device 1 also comprises an axis of symmetry A and an additional axis B which is perpendicular to said axis of symmetry A.
  • the central turn 2 comprises an opening C, located in the axis of the axis of symmetry A of the inductive device 1, in order to power the latter.
  • the inductive device 1 further comprises two supply means 5, 6 connected to the central turn 2 and in the vicinity of its opening C.
  • the central turn 2, as well as the outer turns 3, 4 are coplanar, according to a plane P of FIG. integrated inductive device 1.
  • the axis of symmetry A and the additional axis B are also coplanar with said turns 2 to 4.
  • the integrated inductive device 1 comprises at least two metallization levels (a higher level and a lower level) separated by a dielectric. We have shown on the figure 1 the upper level of metallization of the inductive device 1 in solid lines and the lower level in dashed lines.
  • the two outer turns 3, 4 are mutually coupled to the central turn 2 so as to form two substantially eight-shaped patterns, having a common portion corresponding to said central turn 2.
  • the first outer turn 3 is mutually coupled to the central turn 2 by a first link 7.
  • the second outer turn 4 is also mutually coupled to the central turn 2 via a second link 8.
  • the first link 7 has a part 7a on the upper metallization level and a part 7b on the metallization level lower part 7b being connected to the upper metallization level by vias (not shown here for simplification purposes).
  • the second link 8 has a portion 8a on the upper metallization level and a portion 8b on the lower metallization level, the 8b portion being connected to the upper metallization level by vias (not shown here for simplification purposes).
  • the supply current travels the outer turns 3, 4 in the opposite direction of clockwise.
  • the current thus generates in the first outer turn 3 a first electromagnetic field induced along a first direction axis E which is perpendicular to the plane P of the inductive device 1 and oriented in a first direction.
  • the current also generates in the second outer turn 4 a second electromagnetic field induced along a second direction axis F which is also perpendicular to the plane P of the inductive device 1 and oriented in the same direction as the first direction axis.
  • the supply current travels through the central turn 2 in the direction of clockwise, and thus generates a third induced electromagnetic field along a third axis of direction G which is perpendicular to the plane P of the inductive device 1 and oriented in a second direction. direction opposite to the first direction of the axes of direction E, F of the external turns 3, 4.
  • This third electromagnetic field induced makes it possible to compensate for the first two electromagnetic fields, thus making it possible to reduce the coupling levels between the inductive device 1 and the components of the integrated circuit located in the vicinity of this latest.
  • the third axis of direction G is situated substantially at the midpoint of the inductive device 1 and that this midpoint is accessible from the opening C of the central turn 2.
  • outer turns 3.4 each comprise a midpoint and that the two axes of direction E, F respectively pass through said midpoints of the outer turns 3.4.
  • the central turn 2 is integrally inserted between the outer turns 3, 4 so that the middle points of the outer turns 3.4 are aligned with the midpoint of the inductive device. That is to say that the three midpoints are aligned along the additional axis B, which promotes the homogeneity of the global electromagnetic field induced by the inductive device 1.
  • central turn 2 is vis-à-vis all the outer turns so that the three turns 2, 3, 4 have substantially the same diameter.
  • the first curve S1 is obtained from an integrated inductive device comprising a single turn.
  • the second curve S2 is obtained from an integrated inductive device comprising two turns as described in the US patent application. US 2005/0195063 .
  • the third curve S3 is obtained from an integrated inductive device 1 comprising three turns as described in FIG. figure 1 .
  • the abscissa axis corresponds to the inductance L of an integrated inductive device expressed in nano henry.
  • the ordinate axis corresponds to the diameter De of the integrated inductive device expressed in micrometers.
  • FIG. 3 On the figure 3 three systems Sy1, Sy2, Sy3 are shown schematically, each comprising a first reference inductive device LS1 and a second different inductive device for each system Sy1, Sy2, Sy3, in order to measure the coupling level between each second inductive device. and the reference inductive device LS1 in order to be able to compare the coupling level generated by each of the different inductive devices.
  • the inductive reference device LS1 comprises a single turn.
  • the first system Sy1 comprises the first reference inductive device LS1 located at a distance of 200 micrometers from a second inductive device LS1 identical to the first.
  • the second system Sy2 comprises the inductive reference device LS1 situated at a distance of 200 micrometers from a second inductive device LS2 comprising two turns as described in the US patent application. US 2005/0195063 .
  • the third system Sy3 comprises the reference inductive device LS1 situated at a distance of 200 micrometers from a second inductive device LS3 comprising three turns as described in FIG. figure 1 .
  • Coupling levels are expressed in decibels as a function of the frequency (in gigahertz) of the current flowing through the inductive devices.
  • the decibel unit (denoted by dB) is a logarithmic unit for measuring the ratio between two powers. This unit is dimensionless and defines a scale of intensity known to those skilled in the art.
  • the comparison of the three curves makes it possible to highlight the reduction of the coupling level of the inductive device LS3, as described in FIG. figure 1 , compared to the state of the art represented by the two inductive devices LS1 and LS2.
  • the inductive device LS3 makes it possible to improve the coupling by about 15 dB compared with the inductive device LS2 as described in the US patent application. US 2005/0195063 .
  • a wireless communication apparatus 10 is shown schematically.
  • This wireless communication apparatus 10 includes an antenna 11 for transmitting and receiving communication signals with a remote base station.
  • This apparatus comprises a transmission chain comprising, in a conventional manner, an ETN digital processing stage, an ETA analog processing stage and the antenna 11.
  • the digital processing stage ETN generates a baseband signal for the analog processing stage ETA.
  • the ETA analog processing stage comprises in particular a MIX mixer, a PPA power preamplifier, a PA power amplifier and a PLL phase-locked loop comprising a VCO voltage-controlled oscillator.
  • the voltage controlled oscillator VCO comprises an integrated circuit CI which comprises at least one integrated inductive device 1 as described in FIG. figure 1 .
  • the output of the VCO voltage controlled oscillator provides a transposition signal for the MIX mixer.
  • the mixer MIX also receives the signal, for example in baseband, from the digital processing stage ETN and frequency transposes the baseband signal into a radiofrequency signal to be transmitted for the remote base station.
  • This radiofrequency signal is amplified by an amplification system comprising the power preamplifier PPA and the power amplifier PA, and is then transmitted thanks to the antenna 11 of the apparatus 10.
  • the coupling levels between the voltage-controlled oscillator VCO are reduced and, in particular, the power amplifier PA, thus promoting the reduction of spurious signals from the power amplifier PA and improving the output signal of the voltage-controlled oscillator VCO.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Near-Field Transmission Systems (AREA)
EP10174810A 2009-09-08 2010-09-01 Integrierte induktive Vorrichtung Withdrawn EP2293309A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0956100 2009-09-08

Publications (1)

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EP2293309A1 true EP2293309A1 (de) 2011-03-09

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US (1) US9019065B2 (de)
EP (1) EP2293309A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3238219A4 (de) * 2014-12-23 2018-08-29 Nokia Technologies OY Magnetische vorrichtungen mit geringem übersprechen

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10665378B1 (en) * 2016-03-08 2020-05-26 Marvell International Ltd. Systems and methods for an inductor structure with enhanced area usage of a circuit
US9667407B1 (en) * 2016-05-13 2017-05-30 Credo Technology Group Limited Integrated multi-channel receiver having independent clock recovery modules with enhanced inductors
US20170345546A1 (en) * 2016-05-27 2017-11-30 Qualcomm Incorporated Stacked inductors
CN109074937B (zh) * 2016-07-13 2020-09-08 日本制铁株式会社 电感调整装置
US10529795B2 (en) * 2016-07-27 2020-01-07 Credo Technology Group Ltd. Enhanced inductors suitable for integrated multi-channel receivers
US10483910B2 (en) 2017-02-02 2019-11-19 Credo Technology Group Limited Multiport inductors for enhanced signal distribution
CN109314095B (zh) 2017-04-10 2023-07-21 默升科技集团有限公司 笼式屏蔽中介层电感
JP6954478B2 (ja) * 2018-08-17 2021-10-27 株式会社村田製作所 平面アレイコイル及びスイッチング電源装置

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US20040140878A1 (en) * 2003-01-17 2004-07-22 Mitsubishi Denki Kabushiki Kaisha Inductor having small energy loss
US20050140486A1 (en) * 2003-12-26 2005-06-30 Hung-Wen Lin Multi-layer chip inductive element
US20050195063A1 (en) 2004-03-03 2005-09-08 Thomas Mattsson Method of and inductor layout for reduced VCO coupling
WO2009081342A1 (en) * 2007-12-21 2009-07-02 Nxp B.V. Low magnetic field inductor

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US1604478A (en) * 1925-08-18 1926-10-26 Oporia L Orton Cluster inductance coil for radio sets
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US7460001B2 (en) * 2003-09-25 2008-12-02 Qualcomm Incorporated Variable inductor for integrated circuit and printed circuit board
US7432794B2 (en) * 2004-08-16 2008-10-07 Telefonaktiebolaget L M Ericsson (Publ) Variable integrated inductor
US7955886B2 (en) * 2005-03-30 2011-06-07 Silicon Laboratories Inc. Apparatus and method for reducing interference

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US20040140878A1 (en) * 2003-01-17 2004-07-22 Mitsubishi Denki Kabushiki Kaisha Inductor having small energy loss
US20050140486A1 (en) * 2003-12-26 2005-06-30 Hung-Wen Lin Multi-layer chip inductive element
US20050195063A1 (en) 2004-03-03 2005-09-08 Thomas Mattsson Method of and inductor layout for reduced VCO coupling
WO2009081342A1 (en) * 2007-12-21 2009-07-02 Nxp B.V. Low magnetic field inductor

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Title
NATHAN M NEIHART ET AL: "Twisted inductors for low coupling mixed-signal and RF applications", CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2008. CICC 2008. IEEE, IEEE, PISCATAWAY, NJ, USA, 21 September 2008 (2008-09-21), pages 575 - 578, XP031361527, ISBN: 978-1-4244-2018-6 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3238219A4 (de) * 2014-12-23 2018-08-29 Nokia Technologies OY Magnetische vorrichtungen mit geringem übersprechen

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US20110057759A1 (en) 2011-03-10
US9019065B2 (en) 2015-04-28

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