ATE421191T1 - Herstellung integrierter, akustischer dünnschichtresonatoren (fbar) mit unterschiedlichen frequenzen - Google Patents

Herstellung integrierter, akustischer dünnschichtresonatoren (fbar) mit unterschiedlichen frequenzen

Info

Publication number
ATE421191T1
ATE421191T1 AT05737419T AT05737419T ATE421191T1 AT E421191 T1 ATE421191 T1 AT E421191T1 AT 05737419 T AT05737419 T AT 05737419T AT 05737419 T AT05737419 T AT 05737419T AT E421191 T1 ATE421191 T1 AT E421191T1
Authority
AT
Austria
Prior art keywords
different frequencies
fbar
production
thin film
acoustic resonators
Prior art date
Application number
AT05737419T
Other languages
English (en)
Inventor
Qing Ma
Li-Peng Wang
Dong Shim
Valluri Rao
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE421191T1 publication Critical patent/ATE421191T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0478—Resonance frequency in a process for mass production

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
AT05737419T 2004-05-07 2005-04-13 Herstellung integrierter, akustischer dünnschichtresonatoren (fbar) mit unterschiedlichen frequenzen ATE421191T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/841,402 US20050248420A1 (en) 2004-05-07 2004-05-07 Forming integrated plural frequency band film bulk acoustic resonators

Publications (1)

Publication Number Publication Date
ATE421191T1 true ATE421191T1 (de) 2009-01-15

Family

ID=34966421

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05737419T ATE421191T1 (de) 2004-05-07 2005-04-13 Herstellung integrierter, akustischer dünnschichtresonatoren (fbar) mit unterschiedlichen frequenzen

Country Status (7)

Country Link
US (1) US20050248420A1 (de)
EP (1) EP1751858B1 (de)
JP (1) JP4567731B2 (de)
CN (1) CN1951005B (de)
AT (1) ATE421191T1 (de)
DE (1) DE602005012385D1 (de)
WO (1) WO2005114836A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070139140A1 (en) * 2005-12-20 2007-06-21 Rao Valluri R Frequency tuning of film bulk acoustic resonators (FBAR)
JP2008172494A (ja) * 2007-01-11 2008-07-24 Fujitsu Media Device Kk 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。
JP2009124583A (ja) * 2007-11-16 2009-06-04 Murata Mfg Co Ltd 圧電振動装置
JP5340876B2 (ja) * 2009-10-07 2013-11-13 太陽誘電株式会社 弾性波デバイス、フィルタ、通信モジュール、通信装置
JP2011199453A (ja) * 2010-03-18 2011-10-06 Seiko Epson Corp 振動体および振動デバイス
JP5229308B2 (ja) * 2010-12-07 2013-07-03 株式会社村田製作所 圧電デバイス及びその製造方法
JP5588889B2 (ja) 2011-02-08 2014-09-10 太陽誘電株式会社 弾性波デバイスおよびフィルタ
JP2013038471A (ja) * 2011-08-03 2013-02-21 Taiyo Yuden Co Ltd 弾性波フィルタ
JP2017060077A (ja) * 2015-09-18 2017-03-23 セイコーエプソン株式会社 振動子及びその製造方法
JP2017108228A (ja) * 2015-12-08 2017-06-15 日本電波工業株式会社 圧電振動子の周波数調整方法および圧電振動子
JP6515042B2 (ja) * 2016-01-25 2019-05-15 太陽誘電株式会社 弾性波デバイス
CN108134589B (zh) * 2018-02-05 2020-02-18 武汉衍熙微器件有限公司 一种薄膜体声波谐振器
EP3723285A4 (de) 2018-01-19 2020-12-30 Wuhan Yanxi Micro Components Co., Ltd. Schicht-volumenschallwellenresonator
CN108173528A (zh) * 2018-02-01 2018-06-15 湖北宙讯科技有限公司 滤波器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56154813A (en) * 1980-04-30 1981-11-30 Murata Mfg Co Ltd Fine adjusting method for resonance frequency of energy shut-in type piezoelectric oscillator and its products
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
JPH0998052A (ja) * 1995-09-29 1997-04-08 Matsushita Electric Ind Co Ltd 電子部品
US6051907A (en) * 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
WO1999059244A2 (de) * 1998-05-08 1999-11-18 Infineon Technologies Ag Dünnfilm-piezoresonator
JP4513169B2 (ja) * 2000-05-17 2010-07-28 株式会社村田製作所 圧電フィルタ、通信装置および圧電フィルタの製造方法
US6407649B1 (en) * 2001-01-05 2002-06-18 Nokia Corporation Monolithic FBAR duplexer and method of making the same
US6617249B2 (en) * 2001-03-05 2003-09-09 Agilent Technologies, Inc. Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
US6874211B2 (en) * 2001-03-05 2005-04-05 Agilent Technologies, Inc. Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method
US6566979B2 (en) * 2001-03-05 2003-05-20 Agilent Technologies, Inc. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
JP2005236337A (ja) * 2001-05-11 2005-09-02 Ube Ind Ltd 薄膜音響共振器及びその製造方法
JP3954395B2 (ja) * 2001-10-26 2007-08-08 富士通株式会社 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
JP2003229743A (ja) * 2001-11-29 2003-08-15 Murata Mfg Co Ltd 圧電フィルタ、通信装置および圧電フィルタの製造方法
JP2003347613A (ja) * 2002-05-27 2003-12-05 Mitsubishi Electric Corp 圧電体薄膜素子
JP3941592B2 (ja) * 2002-06-03 2007-07-04 株式会社村田製作所 圧電フィルタ、およびそれを有する電子部品
US20040017130A1 (en) * 2002-07-24 2004-01-29 Li-Peng Wang Adjusting the frequency of film bulk acoustic resonators
US6794958B2 (en) * 2002-07-25 2004-09-21 Agilent Technologies, Inc. Method of fabricating a semiconductor device and an apparatus embodying the method
US20040027030A1 (en) * 2002-08-08 2004-02-12 Li-Peng Wang Manufacturing film bulk acoustic resonator filters
DE10241425B4 (de) * 2002-09-06 2015-06-18 Epcos Ag Mit akustischen Wellen arbeitender Resonator mit Unterdrückung störender Nebenmoden

Also Published As

Publication number Publication date
US20050248420A1 (en) 2005-11-10
CN1951005A (zh) 2007-04-18
DE602005012385D1 (de) 2009-03-05
CN1951005B (zh) 2010-06-16
EP1751858A1 (de) 2007-02-14
EP1751858B1 (de) 2009-01-14
WO2005114836A1 (en) 2005-12-01
JP2007535279A (ja) 2007-11-29
JP4567731B2 (ja) 2010-10-20

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