JP2007535279A - 集積化された多周波数帯圧電薄膜共振器(fbar)の形成 - Google Patents
集積化された多周波数帯圧電薄膜共振器(fbar)の形成 Download PDFInfo
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- 238000001459 lithography Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
Abstract
【解決手段】リソグラフィー技術を用いて、多周波数帯圧電薄膜共振器(Film Bulk Acoustic Resonator、FBAR)を1つの同じ集積回路上に形成するとしてもよい。このようにすることによって、再現性のある構成部品を大量生産できるようになり、製造された共振器は周波数が互いに異なる構造となる。
【選択図】図3
Description
Claims (24)
- リソグラフィー技術を用いて、異なる周波数を持つ少なくとも2つの圧電薄膜共振器を、1つの集積回路上に形成すること
を含む方法。 - 基板上に下部電極を形成すること
を含む請求項1に記載の方法。 - 前記下部電極の上に圧電材料を形成すること
を含む請求項2に記載の方法。 - 前記圧電材料の上に上部電極を形成すること
を含む請求項3に記載の方法。 - 前記共振器それぞれの周波数を決定するべく、前記上部電極の上に変調材料を形成すること
を含む請求項4に記載の方法。 - 前記共振器それぞれの周波数を決定するべく、前記上部電極を形成すること
を含む請求項4に記載の方法。 - 1つの集積回路上に、複数の上部電極を有し且つ当該上部電極の垂直方向の高さがそれぞれ異なる共振器を形成すること
を含む請求項6に記載の方法。 - 上部電極の上に形成された複数のストライプのパターンが異なるため周波数が異なる共振器を少なくとも2つ形成すること
を含む請求項1に記載の方法。 - 前記上部電極の上に、音響品質係数が高い材料を堆積すること
を含む請求項1に記載の方法。 - 周波数が異なる2つの共振器を形成するべく、2つの共振器の上部電極をそれぞれリソグラフィー技術を用いてパターニングすること
を含む請求項1に記載の方法。 - 2つの異なる周波数を持つ複数の共振器を形成するべく、前記共振器のそれぞれの上部電極の特性を調整すること
を含む請求項1に記載の方法。 - 方法であって、
集積回路上に、第1周波数を持つ第1圧電薄膜共振器を形成することと、
前記集積回路上に、前記第1周波数とは異なる第2周波数を持つ第2圧電薄膜共振器を、リソグラフィー技術およびパターニングによって、前記共振器同士を識別できるように形成することと
を含む方法。 - 各共振器について、基板上に下部電極、前記下部電極の上に圧電材料、および前記圧電材料の上に上部電極を形成すること
を含む請求項12に記載の方法。 - 前記2つの共振器それぞれの周波数を決定すべく、前記上部電極の上に変調材料を形成すること
を含む請求項13に記載の方法。 - 前記2つの共振器それぞれの周波数を決定するように前記上部電極を形成すること
を含む請求項13に記載の方法。 - 周波数が異なる2つの共振器を製造すべく、前記共振器の上部電極の垂直方向の高さを調整すること
を含む請求項15に記載の方法。 - 前記2つの圧電薄膜共振器それぞれの周波数帯域を決定すべく、前記上部電極の上に、変調材料から成り、且つ幅が異なるストライプを複数形成すること
を含む請求項13に記載の方法。 - 周波数が異なる前記2つの共振器を形成すべく、前記共振器それぞれの上部電極の特性を調整すること
を含む請求項12に記載の方法。 - 集積回路であって、
第1周波数で動作する第1圧電薄膜共振器と、
第2周波数で動作する第2圧電薄膜共振器と
を備え、
前記第1共振器および第2共振器それぞれの周波数を異ならせるべく、前記第1共振器および前記第2共振器の上部電極構造はパターニングが異なる
集積回路。 - 前記第1共振器および前記第2共振器はそれぞれ上部電極を有し、当該上部電極は両共振器の周波数が互いに異なるようにパターニングが異なる
請求項19に記載の集積回路。 - 前記上部電極構造は変調材料を含み、前記共振器はそれぞれ上部電極を有し、前記変調材料は前記上部電極の上に形成され、周波数が異なる共振器が形成されるように、前記第1共振器の変調材料は第1パターンを有し、前記第2共振器の変調材料は第2パターンを有する
請求項19に記載の集積回路。 - 前記第1共振器および前記第2共振器はそれぞれ電極を有し、当該電極は互いに厚みが異なる
請求項19に記載の集積回路。 - 前記第1共振器および前記第2共振器はそれぞれ、平行に配設された複数のストライプとして形成された上部電極を有する
請求項19に記載の集積回路。 - 前記複数のストライプは、前記共振器の周波数を決めるべく、異なる厚みを持つ
請求項23に記載の集積回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/841,402 US20050248420A1 (en) | 2004-05-07 | 2004-05-07 | Forming integrated plural frequency band film bulk acoustic resonators |
PCT/US2005/012910 WO2005114836A1 (en) | 2004-05-07 | 2005-04-13 | Forming integrated plural frequency band film bulk acoustic resonators |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007535279A true JP2007535279A (ja) | 2007-11-29 |
JP4567731B2 JP4567731B2 (ja) | 2010-10-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007510785A Expired - Fee Related JP4567731B2 (ja) | 2004-05-07 | 2005-04-13 | 圧電薄膜共振器の製造方法および集積回路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050248420A1 (ja) |
EP (1) | EP1751858B1 (ja) |
JP (1) | JP4567731B2 (ja) |
CN (1) | CN1951005B (ja) |
AT (1) | ATE421191T1 (ja) |
DE (1) | DE602005012385D1 (ja) |
WO (1) | WO2005114836A1 (ja) |
Cited By (5)
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JP2011082817A (ja) * | 2009-10-07 | 2011-04-21 | Taiyo Yuden Co Ltd | 弾性波デバイス、フィルタ、通信モジュール、通信装置 |
JP2011199453A (ja) * | 2010-03-18 | 2011-10-06 | Seiko Epson Corp | 振動体および振動デバイス |
JP2012124648A (ja) * | 2010-12-07 | 2012-06-28 | Murata Mfg Co Ltd | 圧電デバイス及びその製造方法 |
US9013250B2 (en) | 2011-02-08 | 2015-04-21 | Taiyo Yuden Co., Ltd. | Acoustic wave device and filter |
JP2017060077A (ja) * | 2015-09-18 | 2017-03-23 | セイコーエプソン株式会社 | 振動子及びその製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070139140A1 (en) * | 2005-12-20 | 2007-06-21 | Rao Valluri R | Frequency tuning of film bulk acoustic resonators (FBAR) |
JP2008172494A (ja) * | 2007-01-11 | 2008-07-24 | Fujitsu Media Device Kk | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
JP2009124583A (ja) * | 2007-11-16 | 2009-06-04 | Murata Mfg Co Ltd | 圧電振動装置 |
JP2013038471A (ja) * | 2011-08-03 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波フィルタ |
JP2017108228A (ja) * | 2015-12-08 | 2017-06-15 | 日本電波工業株式会社 | 圧電振動子の周波数調整方法および圧電振動子 |
JP6515042B2 (ja) * | 2016-01-25 | 2019-05-15 | 太陽誘電株式会社 | 弾性波デバイス |
WO2019141073A1 (zh) | 2018-01-19 | 2019-07-25 | 武汉衍熙微器件有限公司 | 一种薄膜体声波谐振器 |
CN108134589B (zh) * | 2018-02-05 | 2020-02-18 | 武汉衍熙微器件有限公司 | 一种薄膜体声波谐振器 |
CN108173528A (zh) * | 2018-02-01 | 2018-06-15 | 湖北宙讯科技有限公司 | 滤波器 |
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- 2005-04-13 JP JP2007510785A patent/JP4567731B2/ja not_active Expired - Fee Related
- 2005-04-13 DE DE602005012385T patent/DE602005012385D1/de active Active
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JP2011082817A (ja) * | 2009-10-07 | 2011-04-21 | Taiyo Yuden Co Ltd | 弾性波デバイス、フィルタ、通信モジュール、通信装置 |
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---|---|
JP4567731B2 (ja) | 2010-10-20 |
US20050248420A1 (en) | 2005-11-10 |
ATE421191T1 (de) | 2009-01-15 |
DE602005012385D1 (de) | 2009-03-05 |
CN1951005A (zh) | 2007-04-18 |
WO2005114836A1 (en) | 2005-12-01 |
CN1951005B (zh) | 2010-06-16 |
EP1751858B1 (en) | 2009-01-14 |
EP1751858A1 (en) | 2007-02-14 |
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