ATE416477T1 - Verfahren und system zur reinigung eines substrats und programmspeichermedium - Google Patents

Verfahren und system zur reinigung eines substrats und programmspeichermedium

Info

Publication number
ATE416477T1
ATE416477T1 AT07009836T AT07009836T ATE416477T1 AT E416477 T1 ATE416477 T1 AT E416477T1 AT 07009836 T AT07009836 T AT 07009836T AT 07009836 T AT07009836 T AT 07009836T AT E416477 T1 ATE416477 T1 AT E416477T1
Authority
AT
Austria
Prior art keywords
cleaning
substrate
cleaning liquid
storage medium
program storage
Prior art date
Application number
AT07009836T
Other languages
English (en)
Inventor
Tsukasa Watanabe
Naoki Shindo
Koukichi Hiroshiro
Yuji Kamikawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE416477T1 publication Critical patent/ATE416477T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
AT07009836T 2006-05-19 2007-05-16 Verfahren und system zur reinigung eines substrats und programmspeichermedium ATE416477T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006140377A JP4705517B2 (ja) 2006-05-19 2006-05-19 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体

Publications (1)

Publication Number Publication Date
ATE416477T1 true ATE416477T1 (de) 2008-12-15

Family

ID=38472834

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07009836T ATE416477T1 (de) 2006-05-19 2007-05-16 Verfahren und system zur reinigung eines substrats und programmspeichermedium

Country Status (7)

Country Link
US (1) US8152928B2 (de)
EP (1) EP1858059B1 (de)
JP (1) JP4705517B2 (de)
KR (1) KR101049842B1 (de)
AT (1) ATE416477T1 (de)
DE (1) DE602007000315D1 (de)
TW (1) TW200818282A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231579A (ja) * 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP5666086B2 (ja) 2008-12-25 2015-02-12 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコンウェハ洗浄装置
US8404056B1 (en) 2009-05-27 2013-03-26 WD Media, LLC Process control for a sonication cleaning tank
US8863763B1 (en) 2009-05-27 2014-10-21 WD Media, LLC Sonication cleaning with a particle counter
CN102029273B (zh) * 2009-10-05 2015-09-16 东京毅力科创株式会社 超声波清洗装置、超声波清洗方法
TWI490931B (zh) * 2009-10-05 2015-07-01 Tokyo Electron Ltd 超音波清洗裝置、超音波清洗方法、及記錄有用來執行此超音波清洗方法之電腦程式的記錄媒體
TW201330084A (zh) * 2012-01-13 2013-07-16 Smartron Co Ltd 晶片清洗裝置及其工序方法
JP5894858B2 (ja) * 2012-05-24 2016-03-30 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
JP5872382B2 (ja) * 2012-05-24 2016-03-01 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
US9174249B2 (en) * 2012-12-12 2015-11-03 Lam Research Corporation Ultrasonic cleaning method and apparatus therefore
US9070631B2 (en) * 2013-03-14 2015-06-30 Mei Llc Metal liftoff tools and methods
JP6329342B2 (ja) * 2013-06-07 2018-05-23 株式会社ダルトン 洗浄方法及び洗浄装置
US9562291B2 (en) 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP6090184B2 (ja) * 2014-01-27 2017-03-08 信越半導体株式会社 半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法
US10522369B2 (en) * 2015-02-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for cleaning wafer and scrubber
EP3515611A4 (de) 2016-09-19 2020-05-13 ACM Research (Shanghai) Inc. Verfahren und vorrichtung zur reinigung von substraten
KR102658739B1 (ko) * 2017-05-03 2024-04-17 램 리써치 코포레이션 컨디셔닝 챔버 컴포넌트
JP6977845B1 (ja) * 2020-09-30 2021-12-08 栗田工業株式会社 電子部品・部材の洗浄水供給装置及び電子部品・部材の洗浄水の供給方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5427622A (en) * 1993-02-12 1995-06-27 International Business Machines Corporation Method for uniform cleaning of wafers using megasonic energy
JPH0831783A (ja) * 1994-07-14 1996-02-02 Fujitsu Ltd 基板のダイシング方法とその装置
KR0170214B1 (ko) * 1995-12-29 1999-03-30 김광호 교반기가 장착된 웨이퍼 세정 장치
KR100202191B1 (ko) * 1996-07-18 1999-06-15 문정환 반도체 웨이퍼 습식 처리장치
JPH10109072A (ja) 1996-10-04 1998-04-28 Puretetsuku:Kk 高周波洗浄装置
JPH10223585A (ja) 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
US6391067B2 (en) * 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
US5800626A (en) * 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
US5849091A (en) * 1997-06-02 1998-12-15 Micron Technology, Inc. Megasonic cleaning methods and apparatus
JP3839553B2 (ja) * 1997-06-05 2006-11-01 大日本スクリーン製造株式会社 基板処理槽および基板処理装置
US6039055A (en) * 1998-01-08 2000-03-21 International Business Machines Corporation Wafer cleaning with dissolved gas concentration control
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
KR200261175Y1 (ko) * 1998-12-30 2002-05-13 김광교 반도체웨이퍼세정용약액공급장치
JP3851486B2 (ja) * 2000-03-27 2006-11-29 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2001284306A (ja) * 2000-03-28 2001-10-12 Toshiba Corp 基板洗浄装置および基板洗浄方法
JP2002093765A (ja) * 2000-09-20 2002-03-29 Kaijo Corp 基板洗浄方法および基板洗浄装置
US6532974B2 (en) * 2001-04-06 2003-03-18 Akrion Llc Process tank with pressurized mist generation
US20020166569A1 (en) * 2001-05-10 2002-11-14 Speedfam-Ipec Corporation Method and apparatus for semiconductor wafer cleaning
JP4319445B2 (ja) * 2002-06-20 2009-08-26 大日本スクリーン製造株式会社 基板処理装置
US7111632B2 (en) * 2003-09-22 2006-09-26 Seagate Technology Llc Ultrasonic cleaning device for removing undesirable particles from an object
EP1736568A4 (de) * 2004-04-15 2011-01-12 Tokyo Electron Ltd Flüssigkeitsbehandlungsvorrichtung und flüssigkeitsbehandlungsverfahren
JP2006066793A (ja) * 2004-08-30 2006-03-09 Naoetsu Electronics Co Ltd ウエハ洗浄方法及びその装置
JP2006108512A (ja) * 2004-10-07 2006-04-20 Ses Co Ltd 基板処理装置
JP4490780B2 (ja) * 2004-10-07 2010-06-30 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
TWI262827B (en) * 2005-12-13 2006-10-01 Ind Tech Res Inst Cleaning device and method of bubble reaction

Also Published As

Publication number Publication date
EP1858059B1 (de) 2008-12-03
US8152928B2 (en) 2012-04-10
TW200818282A (en) 2008-04-16
EP1858059A1 (de) 2007-11-21
JP4705517B2 (ja) 2011-06-22
DE602007000315D1 (de) 2009-01-15
JP2007311631A (ja) 2007-11-29
TWI342040B (de) 2011-05-11
KR20070111973A (ko) 2007-11-22
US20070267040A1 (en) 2007-11-22
KR101049842B1 (ko) 2011-07-15

Similar Documents

Publication Publication Date Title
ATE416477T1 (de) Verfahren und system zur reinigung eines substrats und programmspeichermedium
EP1834708A3 (de) Verfahren und System zur Reinigung eines Substrats und Programmspeichermedium
TW200746284A (en) Method, apparatus for cleaning substrate and program recording medium
MY154929A (en) Particle removal method and composition
DE602005020353D1 (de) Verfahren zur oberflächenbearbeitung eines knochenimplantats
TW200711754A (en) Ultrasonic cleaning system and method
SG115836A1 (en) Controls of ambient environment during wafer drying using proximity head
WO2006096814A3 (en) Method and system for processing substrates with sonic energy that reduces or eliminates damage to semiconductor devices
DE60140780D1 (de) Verfahren und Vorrichtung zum Reinigen und Trocknen eines Substrats
TW200739710A (en) Substrate processing method and substrate processing apparatus
SG149849A1 (en) Method and apparatus for cleaning a substrate using non-newtonian fluids
TW200710981A (en) Method for removing material from semiconductor wafer and apparatus for performing the same
ATE514495T1 (de) Verfahren zum entfernen von partikeln von einer halbleiteroberfläche
CN102489470A (zh) 玻璃基板的清洗装置及清洗方法
CN202097155U (zh) 二极管表面清洗装置
WO2013139047A1 (zh) Tft-lcd玻璃基板清洗方法
WO2008096696A1 (ja) 超音波洗浄方法
ATE523267T1 (de) Vorrichtung und verfahren zur entgratung und/oder reinigung eines in ein flüssiges medium eingetauchten werkstücks
TW200625430A (en) Methods of inserting or removing a species from a substrate
SG148960A1 (en) Substrate cleaning method and substrate cleaning apparatus
EP1696476A3 (de) Verfahren zur Behandlung von Substrat Oberflächen, zur Reinigung von Substraten und für die Verfahren implementierende Programme
JP2009246000A (ja) 基板の処理装置及び処理方法
TW200640586A (en) Method and device of processing substrate
MY147281A (en) An apparatus for washing a workpiece
EP2184128A3 (de) Verfahren zum Reparieren von Gasturbinenmotorkomponenten

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties