ATE514495T1 - Verfahren zum entfernen von partikeln von einer halbleiteroberfläche - Google Patents

Verfahren zum entfernen von partikeln von einer halbleiteroberfläche

Info

Publication number
ATE514495T1
ATE514495T1 AT06725265T AT06725265T ATE514495T1 AT E514495 T1 ATE514495 T1 AT E514495T1 AT 06725265 T AT06725265 T AT 06725265T AT 06725265 T AT06725265 T AT 06725265T AT E514495 T1 ATE514495 T1 AT E514495T1
Authority
AT
Austria
Prior art keywords
particles
cleaning
semiconductor surface
removal
supplied
Prior art date
Application number
AT06725265T
Other languages
English (en)
Inventor
Alexander Pfeuffer
Original Assignee
Lam Res Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Ag filed Critical Lam Res Ag
Application granted granted Critical
Publication of ATE514495T1 publication Critical patent/ATE514495T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/08—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/14—Silicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning By Liquid Or Steam (AREA)
AT06725265T 2005-04-05 2006-03-23 Verfahren zum entfernen von partikeln von einer halbleiteroberfläche ATE514495T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT5762005 2005-04-05
PCT/EP2006/060987 WO2006106045A1 (en) 2005-04-05 2006-03-23 Method for removing particles from a semiconductor surface

Publications (1)

Publication Number Publication Date
ATE514495T1 true ATE514495T1 (de) 2011-07-15

Family

ID=36699088

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06725265T ATE514495T1 (de) 2005-04-05 2006-03-23 Verfahren zum entfernen von partikeln von einer halbleiteroberfläche

Country Status (8)

Country Link
US (1) US7754019B2 (de)
EP (1) EP1869697B1 (de)
JP (1) JP5081809B2 (de)
KR (1) KR20080003821A (de)
CN (1) CN100517594C (de)
AT (1) ATE514495T1 (de)
TW (1) TWI324797B (de)
WO (1) WO2006106045A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457993B (zh) * 2007-01-22 2014-10-21 Lam Res Ag 清潔表面的方法
CN101610980A (zh) * 2007-02-08 2009-12-23 丰塔纳技术公司 粒子去除方法及化合物
US8388762B2 (en) * 2007-05-02 2013-03-05 Lam Research Corporation Substrate cleaning technique employing multi-phase solution
US7749327B2 (en) * 2007-11-01 2010-07-06 Micron Technology, Inc. Methods for treating surfaces
JP5518598B2 (ja) * 2010-07-02 2014-06-11 東京エレクトロン株式会社 パーティクル分布解析支援方法及びその方法を実施するためのプログラムを記録した記録媒体
US8595929B2 (en) * 2010-10-21 2013-12-03 Siemens Energy, Inc. Repair of a turbine engine surface containing crevices
CN102764743A (zh) * 2012-07-25 2012-11-07 赵显华 一种超声波清洗方法
CN103509657A (zh) * 2013-10-17 2014-01-15 太仓康茂电子有限公司 零部件表面清洁方法
AU2015248440C1 (en) * 2014-04-14 2019-11-07 Ever Clean And Clear Technologies Ltd An ultrasound cleaning method with suspended nanoparticles
CN116581068B (zh) * 2023-07-13 2023-12-19 北京紫光华天热能动力技术有限公司 一种硅基材料高效脱除纳米颗粒物装置及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050954A (en) * 1976-03-25 1977-09-27 International Business Machines Corporation Surface treatment of semiconductor substrates
JP2653511B2 (ja) 1989-03-30 1997-09-17 株式会社東芝 半導体装置の洗浄方法及びその洗浄装置
JPH0629272A (ja) * 1992-07-10 1994-02-04 Matsushita Electron Corp 半導体基板の洗浄方法
JP3324181B2 (ja) * 1993-03-12 2002-09-17 富士通株式会社 ウエハの洗浄方法
US5593339A (en) * 1993-08-12 1997-01-14 Church & Dwight Co., Inc. Slurry cleaning process
EP1080797A3 (de) * 1994-06-28 2005-10-05 Ebara Corporation Verfahren und Vorrichtung für die Reinigung von Werkstücken
DE19525521B4 (de) * 1994-07-15 2007-04-26 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Verfahren zum Reinigen von Substraten
TW406329B (en) * 1998-04-30 2000-09-21 Ibm Method of cleaning semiconductor wafers after cmp planarization
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
JP3664605B2 (ja) * 1999-04-30 2005-06-29 信越半導体株式会社 ウェーハの研磨方法、洗浄方法及び処理方法
US6756308B2 (en) * 2001-02-13 2004-06-29 Ekc Technology, Inc. Chemical-mechanical planarization using ozone
AU2003238888A1 (en) * 2002-06-05 2003-12-22 Arizona Board Of Regents Abrasive particles to clean semiconductor wafers during chemical mechanical planarization
KR100516886B1 (ko) * 2002-12-09 2005-09-23 제일모직주식회사 실리콘 웨이퍼의 최종 연마용 슬러리 조성물
US7407601B2 (en) * 2003-04-24 2008-08-05 Taiwan Semiconductor Manufacturing Co., Ltd Polymeric particle slurry system and method to reduce feature sidewall erosion
US7696141B2 (en) * 2003-06-27 2010-04-13 Lam Research Corporation Cleaning compound and method and system for using the cleaning compound

Also Published As

Publication number Publication date
TW200636839A (en) 2006-10-16
EP1869697A1 (de) 2007-12-26
EP1869697B1 (de) 2011-06-29
US7754019B2 (en) 2010-07-13
JP5081809B2 (ja) 2012-11-28
JP2008535276A (ja) 2008-08-28
KR20080003821A (ko) 2008-01-08
US20090050176A1 (en) 2009-02-26
WO2006106045A1 (en) 2006-10-12
CN100517594C (zh) 2009-07-22
CN101151714A (zh) 2008-03-26
TWI324797B (en) 2010-05-11

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