DE69522617T2 - Verfahren und Vorrichtung zum Reinigen von Werkstücken - Google Patents

Verfahren und Vorrichtung zum Reinigen von Werkstücken

Info

Publication number
DE69522617T2
DE69522617T2 DE69522617T DE69522617T DE69522617T2 DE 69522617 T2 DE69522617 T2 DE 69522617T2 DE 69522617 T DE69522617 T DE 69522617T DE 69522617 T DE69522617 T DE 69522617T DE 69522617 T2 DE69522617 T2 DE 69522617T2
Authority
DE
Germany
Prior art keywords
cleaning workpieces
workpieces
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69522617T
Other languages
English (en)
Other versions
DE69522617D1 (de
Inventor
Toshiro Maekawa
Koji Ono
Motoaki Okada
Tamami Takahashi
Shiro Mishima
Masako Kodera
Atsushi Shigeta
Riichiro Aoki
Gisuke Kouno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69522617D1 publication Critical patent/DE69522617D1/de
Publication of DE69522617T2 publication Critical patent/DE69522617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B08B1/32—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B08B1/50—
    • B08B1/52—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
DE69522617T 1994-06-28 1995-05-15 Verfahren und Vorrichtung zum Reinigen von Werkstücken Expired - Fee Related DE69522617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16876794 1994-06-28

Publications (2)

Publication Number Publication Date
DE69522617D1 DE69522617D1 (de) 2001-10-18
DE69522617T2 true DE69522617T2 (de) 2002-07-04

Family

ID=15874079

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69522617T Expired - Fee Related DE69522617T2 (de) 1994-06-28 1995-05-15 Verfahren und Vorrichtung zum Reinigen von Werkstücken

Country Status (4)

Country Link
US (1) US5846335A (de)
EP (2) EP0692318B1 (de)
KR (1) KR100373062B1 (de)
DE (1) DE69522617T2 (de)

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DE69632553T2 (de) * 1995-02-15 2004-09-30 Texas Instruments Inc., Dallas Verfahren zum Entfernen partikulärer Verunreinigungen von der Oberfläche einer Halbleiterscheibe
US6743723B2 (en) 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
US20020068357A1 (en) * 1995-09-28 2002-06-06 Mathies Richard A. Miniaturized integrated nucleic acid processing and analysis device and method
US6132580A (en) * 1995-09-28 2000-10-17 The Regents Of The University Of California Miniature reaction chamber and devices incorporating same
DE19632809C2 (de) * 1996-08-14 2002-06-20 Infineon Technologies Ag Gerät zum chemisch-mechanischen Polieren von Wafern
TW353784B (en) * 1996-11-19 1999-03-01 Tokyo Electron Ltd Apparatus and method for washing substrate
TW364165B (en) * 1996-11-29 1999-07-11 Canon Kk Method for fabricating semiconductor device
JPH10321572A (ja) * 1997-05-15 1998-12-04 Toshiba Corp 半導体ウェーハの両面洗浄装置及び半導体ウェーハのポリッシング方法
JP3654779B2 (ja) * 1998-01-06 2005-06-02 東京エレクトロン株式会社 基板洗浄具及び基板洗浄方法
JP3441956B2 (ja) 1998-02-16 2003-09-02 キヤノン株式会社 露光装置、クリーニング用砥石およびデバイス製造方法
KR100619383B1 (ko) * 1998-03-30 2006-09-06 동경 엘렉트론 주식회사 스크러브 세정장치 및 스크러브 세정방법
US6592676B1 (en) * 1999-01-08 2003-07-15 Interuniversitair Micro-Elektronica Centrum Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate
EP1066926B1 (de) * 1999-06-28 2006-03-29 Societe Europeenne De Systemes Optiques S.E.S.O. Verfahren zum Polieren von mindestens einer Seite eines Silizium enthaltende Werkstücks
US7754061B2 (en) * 2000-08-10 2010-07-13 Novellus Systems, Inc. Method for controlling conductor deposition on predetermined portions of a wafer
US6921551B2 (en) 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
US20020173214A1 (en) * 2001-04-12 2002-11-21 3M Innovative Properties Company Cleaning articles and method of making
US6818604B2 (en) * 2001-10-04 2004-11-16 Speedfam-Ipec Corporation System and method for cleaning workpieces
US20050056303A1 (en) * 2003-09-16 2005-03-17 Wei-Ming Lee Oblique burnish/wipe mechanism for hard drive disk like media
US20050106359A1 (en) * 2003-11-13 2005-05-19 Honeywell International Inc. Method of processing substrate
US7862662B2 (en) 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US8522799B2 (en) 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US20050170980A1 (en) * 2004-01-30 2005-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. ER cleaning composition and method
TWI324797B (en) * 2005-04-05 2010-05-11 Lam Res Corp Method for removing particles from a surface
US8500985B2 (en) 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
US8075697B2 (en) * 2007-02-08 2011-12-13 Fontana Technology Particle removal method and composition
US8211846B2 (en) 2007-12-14 2012-07-03 Lam Research Group Materials for particle removal by single-phase and two-phase media
CN101941005B (zh) * 2010-07-27 2013-08-21 清华大学 擦子装置及其加工方法以及利用该装置进行清洁的方法
US20130217228A1 (en) * 2012-02-21 2013-08-22 Masako Kodera Method for fabricating semiconductor device
CN103506340B (zh) * 2012-06-29 2016-12-21 北京七星华创电子股份有限公司 一种喷淋装置
US9704729B2 (en) * 2013-06-13 2017-07-11 K.C. Tech Co., Ltd. Substrate cleaning apparatus and method and brush assembly used therein
CN103909074B (zh) * 2014-03-26 2016-03-02 中国科学院长春光学精密机械与物理研究所 大口径反射镜自动清洗装置
US10141205B2 (en) * 2014-09-26 2018-11-27 Acm Research (Shanghai) Inc. Apparatus and method for cleaning semiconductor wafer
JP6316730B2 (ja) * 2014-10-31 2018-04-25 株式会社荏原製作所 ロール部材、ペンシル部材、及びそれらの少なくともいずれか一方を含む基板処理装置
CN104492747B (zh) * 2014-12-30 2016-12-07 中国科学院长春光学精密机械与物理研究所 一种可拆卸式望远镜主镜自动清洗装置
WO2016152932A1 (ja) * 2015-03-24 2016-09-29 ＡｖａｎＳｔｒａｔｅ株式会社 ガラス基板の製造方法
JP6661453B2 (ja) * 2016-04-20 2020-03-11 株式会社ディスコ 洗浄装置
JP2019087674A (ja) * 2017-11-08 2019-06-06 株式会社ディスコ 研削装置
KR102211622B1 (ko) * 2018-07-11 2021-02-03 (주)아이솔루션 반도체 설비 세정용 와이퍼 및 이를 가진 세정 팩
CN111744836B (zh) * 2019-03-29 2022-09-16 中芯集成电路（宁波）有限公司 晶圆清洗装置及控制系统
US11948811B2 (en) 2019-12-26 2024-04-02 Ebara Corporation Cleaning apparatus and polishing apparatus
JP7013520B2 (ja) * 2020-04-24 2022-01-31 株式会社スギノマシン 洗浄方法
CN113078078A (zh) * 2021-03-19 2021-07-06 长鑫存储技术有限公司 晶圆清洗方法及晶圆清洗装置
CN115121536A (zh) * 2022-06-24 2022-09-30 广东中图半导体科技股份有限公司 一种压印模板清洗回收方法及清洗回收装置
CN116984972B (zh) * 2023-08-10 2024-03-26 沈阳工业大学 一种用于金刚石晶片的磨削抛光一体化方法与装置

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JPS519764A (en) * 1974-07-12 1976-01-26 Fuji Oil Co Ltd Bataaoiruoryosuru totsupingukuriimuno seizoho
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ATE93437T1 (de) * 1987-08-25 1993-09-15 Rodel Inc Material mit invertierter zellstruktur fuer schleif-, laepp-, form- und poliervorgaenge.
JP2660248B2 (ja) * 1988-01-06 1997-10-08 株式会社 半導体エネルギー研究所 光を用いた膜形成方法
US5235995A (en) * 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
JP2617535B2 (ja) * 1988-10-18 1997-06-04 東京エレクトロン株式会社 洗浄装置
JP2653511B2 (ja) * 1989-03-30 1997-09-17 株式会社東芝 半導体装置の洗浄方法及びその洗浄装置
DE3926673A1 (de) * 1989-08-11 1991-02-14 Wacker Chemitronic Verfahren und vorrichtung zur poliertuchaufbereitung beim chemomechanischen polieren, insbesondere von halbleiterscheiben
JPH04107824A (ja) * 1990-08-28 1992-04-09 Tokyo Electron Ltd 洗浄用部材の洗浄方法
US5279704A (en) * 1991-04-23 1994-01-18 Honda Giken Kogyo Kabushiki Kaisha Method of fabricating semiconductor device
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
JPH0617283A (ja) * 1992-07-02 1994-01-25 Sumitomo Metal Ind Ltd 加工性、成形性に優れためっきＡｌ板およびその製造方法
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5442828A (en) * 1992-11-30 1995-08-22 Ontrak Systems, Inc. Double-sided wafer scrubber with a wet submersing silicon wafer indexer
US5324690A (en) * 1993-02-01 1994-06-28 Motorola Inc. Semiconductor device having a ternary boron nitride film and a method for forming the same
JP3324181B2 (ja) * 1993-03-12 2002-09-17 富士通株式会社 ウエハの洗浄方法
US5551986A (en) * 1995-02-15 1996-09-03 Taxas Instruments Incorporated Mechanical scrubbing for particle removal

Also Published As

Publication number Publication date
EP1080797A3 (de) 2005-10-05
KR960000319A (ko) 1996-01-25
EP0692318B1 (de) 2001-09-12
EP0692318A1 (de) 1996-01-17
EP1080797A2 (de) 2001-03-07
DE69522617D1 (de) 2001-10-18
KR100373062B1 (ko) 2003-05-09
US5846335A (en) 1998-12-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee