ATE412245T1 - Dauer magnet-dünnschicht und hestellungsverfahren - Google Patents

Dauer magnet-dünnschicht und hestellungsverfahren

Info

Publication number
ATE412245T1
ATE412245T1 AT01906188T AT01906188T ATE412245T1 AT E412245 T1 ATE412245 T1 AT E412245T1 AT 01906188 T AT01906188 T AT 01906188T AT 01906188 T AT01906188 T AT 01906188T AT E412245 T1 ATE412245 T1 AT E412245T1
Authority
AT
Austria
Prior art keywords
thin film
permanent magnet
production process
layers
magnet thin
Prior art date
Application number
AT01906188T
Other languages
English (en)
Inventor
Minoru Uehara
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Application granted granted Critical
Publication of ATE412245T1 publication Critical patent/ATE412245T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
    • H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
    • H01F1/047—Alloys characterised by their composition
    • H01F1/053—Alloys characterised by their composition containing rare earth metals
    • H01F1/055—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
    • H01F1/057—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Permanent Field Magnets Of Synchronous Machinery (AREA)
  • Magnetic Heads (AREA)
  • Hard Magnetic Materials (AREA)
AT01906188T 2000-02-22 2001-02-21 Dauer magnet-dünnschicht und hestellungsverfahren ATE412245T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000044175A JP4337209B2 (ja) 2000-02-22 2000-02-22 永久磁石薄膜およびその製造方法

Publications (1)

Publication Number Publication Date
ATE412245T1 true ATE412245T1 (de) 2008-11-15

Family

ID=18566981

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01906188T ATE412245T1 (de) 2000-02-22 2001-02-21 Dauer magnet-dünnschicht und hestellungsverfahren

Country Status (9)

Country Link
US (1) US6805980B2 (de)
EP (1) EP1187148B1 (de)
JP (1) JP4337209B2 (de)
KR (1) KR100734062B1 (de)
CN (1) CN1249737C (de)
AT (1) ATE412245T1 (de)
AU (1) AU3411301A (de)
DE (1) DE60136253D1 (de)
WO (1) WO2001063628A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040062659A1 (en) * 2002-07-12 2004-04-01 Sinha Mahadeva P. Ion pump with combined housing and cathode
JP5063855B2 (ja) * 2004-03-30 2012-10-31 パナソニック株式会社 異方性希土類−鉄系磁石膜の製造方法および超小型モータ
EP1744328B1 (de) * 2005-06-10 2012-07-25 Nissan Motor Co., Ltd. Seltenerdmagnet mit hoher Festigkeit und mit grossem elektrischem Widerstand
SE529789C8 (sv) * 2006-03-10 2007-12-27 Abb Ab Mätanordning omfattande ett skikt av en magnetoelastisk legering och förfarande för tillverkning av mätanordningen
JP5434004B2 (ja) * 2008-07-29 2014-03-05 日立金属株式会社 電磁駆動型アクチュエータ及び電磁駆動型アクチュエータの製造方法
EP2444985B1 (de) * 2010-10-25 2018-07-11 Toyota Jidosha Kabushiki Kaisha Herstellungsverfahren für Seltenerdmagneten
WO2013103132A1 (ja) * 2012-01-04 2013-07-11 トヨタ自動車株式会社 希土類ナノコンポジット磁石
US20140083115A1 (en) * 2012-09-27 2014-03-27 United Technologies Corporation Article with dielectric mirror coating system
JP6175889B2 (ja) * 2013-05-15 2017-08-09 株式会社豊田中央研究所 永久磁石およびその製造方法
JP2015198203A (ja) * 2014-04-02 2015-11-09 株式会社豊田中央研究所 高保磁力化永久磁石
JP6803523B2 (ja) * 2015-03-31 2020-12-23 パナソニックＩｐマネジメント株式会社 薄膜磁石および薄膜磁石の製造方法
WO2017179422A1 (ja) * 2016-04-15 2017-10-19 Ｊｘ金属株式会社 希土類薄膜磁石及びその製造方法
CN109585106B (zh) * 2018-12-18 2021-04-06 宁波铄腾新材料有限公司 一种超大块稀土永磁体及其制备方法
US11362554B2 (en) 2019-06-12 2022-06-14 Ford Global Technologies, Llc Permanent magnets with soft material layers
CN113415780B (zh) * 2021-06-18 2024-01-30 合肥工业大学 一种一维有序结构的金属氧化物纳米纤维薄膜材料及其制备方法
CN115020099B (zh) * 2022-05-26 2023-11-03 中国科学院金属研究所 一种增强NdFeB基永磁厚膜垂直磁各向异性的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000796A (en) * 1988-02-23 1991-03-19 Eastman Kodak Company Anisotropic high energy magnets and a process of preparing the same
US4957668A (en) * 1988-12-07 1990-09-18 General Motors Corporation Ultrasonic compacting and bonding particles
JP2646398B2 (ja) * 1989-09-20 1997-08-27 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 光磁気記録媒体
JPH03285307A (ja) 1990-04-02 1991-12-16 Tdk Corp 磁性多層膜
ATE134793T1 (de) * 1991-07-11 1996-03-15 Laube Hans Juergen Aus mehreren einzelmagnetkörpern zusammengesetzter magnetkörper und eine dauermagnetische schwebelagerung mit aus mehreren einzelmagneten zusammengesetztem gesamtmagnetkörper
US5545266A (en) * 1991-11-11 1996-08-13 Sumitomo Special Metals Co., Ltd. Rare earth magnets and alloy powder for rare earth magnets and their manufacturing methods
JPH06151226A (ja) 1992-05-14 1994-05-31 Yaskawa Electric Corp 膜磁石の形成方法
JPH076916A (ja) 1993-06-16 1995-01-10 Seiko Epson Corp 希土類合金硬磁性薄膜及びその製造方法
JP2785678B2 (ja) * 1994-03-24 1998-08-13 日本電気株式会社 スピンバルブ膜およびこれを用いた再生ヘッド
JP2957421B2 (ja) * 1994-09-09 1999-10-04 三菱電機株式会社 薄膜磁石およびその製造方法ならびに円筒形強磁性薄膜
JP3527786B2 (ja) 1995-03-01 2004-05-17 株式会社日立グローバルストレージテクノロジーズ 多層磁気抵抗効果膜および磁気ヘッド
US5824409A (en) * 1995-11-13 1998-10-20 Board Of Regents High coercivity longitudinal recording media and method for its preparation
JPH09219313A (ja) 1995-12-08 1997-08-19 Hitachi Metals Ltd Ｒ−ｔｍ−ｂ系硬磁性薄膜およびその製造方法
DE69630283T2 (de) * 1995-12-25 2004-05-06 Sumitomo Special Metals Co., Ltd. Dauermagnet für ultra-hoch-vakuum anwendung und herstellung desselben
JP3449160B2 (ja) 1997-03-25 2003-09-22 三菱電機株式会社 磁気抵抗効果素子及びそれを用いた回転センサ
JP2962415B2 (ja) * 1997-10-22 1999-10-12 アルプス電気株式会社 交換結合膜
US6302972B1 (en) * 1998-12-07 2001-10-16 Sumitomo Special Metals Co., Ltd Nanocomposite magnet material and method for producing nanocomposite magnet

Also Published As

Publication number Publication date
JP4337209B2 (ja) 2009-09-30
CN1363101A (zh) 2002-08-07
KR100734062B1 (ko) 2007-07-02
EP1187148A1 (de) 2002-03-13
EP1187148A4 (de) 2006-03-15
US6805980B2 (en) 2004-10-19
EP1187148B1 (de) 2008-10-22
CN1249737C (zh) 2006-04-05
DE60136253D1 (de) 2008-12-04
JP2001237119A (ja) 2001-08-31
US20020192502A1 (en) 2002-12-19
AU3411301A (en) 2001-09-03
WO2001063628A1 (fr) 2001-08-30
KR20020033610A (ko) 2002-05-07

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