ATE390761T1 - Schutzschaltung gegen hochspannung für standard cmos prozess - Google Patents

Schutzschaltung gegen hochspannung für standard cmos prozess

Info

Publication number
ATE390761T1
ATE390761T1 AT99928892T AT99928892T ATE390761T1 AT E390761 T1 ATE390761 T1 AT E390761T1 AT 99928892 T AT99928892 T AT 99928892T AT 99928892 T AT99928892 T AT 99928892T AT E390761 T1 ATE390761 T1 AT E390761T1
Authority
AT
Austria
Prior art keywords
cmos process
gate
high voltage
oxide
protective circuit
Prior art date
Application number
AT99928892T
Other languages
English (en)
Inventor
Louis Wong
David Money
Original Assignee
Cochlear Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cochlear Ltd filed Critical Cochlear Ltd
Application granted granted Critical
Publication of ATE390761T1 publication Critical patent/ATE390761T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electronic Switches (AREA)
AT99928892T 1999-06-29 1999-06-29 Schutzschaltung gegen hochspannung für standard cmos prozess ATE390761T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/AU1999/000519 WO2001003301A1 (en) 1999-06-29 1999-06-29 High voltage protection circuit on standard cmos process

Publications (1)

Publication Number Publication Date
ATE390761T1 true ATE390761T1 (de) 2008-04-15

Family

ID=3764586

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99928892T ATE390761T1 (de) 1999-06-29 1999-06-29 Schutzschaltung gegen hochspannung für standard cmos prozess

Country Status (8)

Country Link
US (1) US6377075B1 (de)
EP (1) EP1190487B1 (de)
JP (1) JP4763192B2 (de)
AT (1) ATE390761T1 (de)
AU (1) AU761220B2 (de)
CA (1) CA2377896A1 (de)
DE (1) DE69938434T2 (de)
WO (1) WO2001003301A1 (de)

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US7199612B2 (en) * 2002-08-12 2007-04-03 Broadcom Corporation Method and circuit for reducing HCI stress
US7068091B1 (en) * 2003-02-27 2006-06-27 Cypress Semiconductor Corporation Voltage translator circuit formed using low voltage transistors
US7274209B1 (en) 2003-06-26 2007-09-25 Cypress Semiconductor Corporation Low voltage to high voltage signal level translator with improved performance
EP1492232A1 (de) 2003-06-27 2004-12-29 Dialog Semiconductor GmbH Komparator mit Hochspannungseingängen in einem erweiterten CMOS-Prozess für Hochspannungspegel
US7205830B2 (en) * 2005-01-04 2007-04-17 International Business Machines Corporation Analog MOS circuits having reduced voltage stress
US7332956B2 (en) * 2005-10-27 2008-02-19 International Business Machines Corporation Method to avoid device stressing
ATE497651T1 (de) * 2006-04-12 2011-02-15 Nxp Bv Elektronische schaltung
JP4991436B2 (ja) * 2007-08-02 2012-08-01 キヤノン株式会社 撮像装置及び撮像システム
US7694243B2 (en) * 2007-12-27 2010-04-06 International Business Machines Corporation Avoiding device stressing
US8154270B2 (en) * 2009-02-13 2012-04-10 Standard Microsystems Corporation Power-up control for very low-power systems
CN102782806A (zh) 2010-03-04 2012-11-14 株式会社安川电机 工作台装置
US9086709B2 (en) 2013-05-28 2015-07-21 Newlans, Inc. Apparatus and methods for variable capacitor arrays
US9570222B2 (en) 2013-05-28 2017-02-14 Tdk Corporation Vector inductor having multiple mutually coupled metalization layers providing high quality factor
US9461610B2 (en) 2014-12-03 2016-10-04 Tdk Corporation Apparatus and methods for high voltage variable capacitors
US9735752B2 (en) 2014-12-03 2017-08-15 Tdk Corporation Apparatus and methods for tunable filters
US9671812B2 (en) 2014-12-17 2017-06-06 Tdk Corporation Apparatus and methods for temperature compensation of variable capacitors
US9362882B1 (en) 2015-01-23 2016-06-07 Tdk Corporation Apparatus and methods for segmented variable capacitor arrays
US9680426B2 (en) 2015-03-27 2017-06-13 Tdk Corporation Power amplifiers with tunable notches
US10382002B2 (en) 2015-03-27 2019-08-13 Tdk Corporation Apparatus and methods for tunable phase networks
US9595942B2 (en) 2015-03-30 2017-03-14 Tdk Corporation MOS capacitors with interleaved fingers and methods of forming the same
US10073482B2 (en) 2015-03-30 2018-09-11 Tdk Corporation Apparatus and methods for MOS capacitor structures for variable capacitor arrays
US10042376B2 (en) 2015-03-30 2018-08-07 Tdk Corporation MOS capacitors for variable capacitor arrays and methods of forming the same
US9973155B2 (en) 2015-07-09 2018-05-15 Tdk Corporation Apparatus and methods for tunable power amplifiers
WO2021171482A1 (ja) 2020-02-27 2021-09-02 株式会社ソシオネクスト 出力回路、送信回路及び半導体集積回路

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US6130557A (en) * 1999-04-26 2000-10-10 Ati Technologies, Inc. Three level pre-buffer voltage level shifting circuit and method

Also Published As

Publication number Publication date
EP1190487B1 (de) 2008-03-26
JP4763192B2 (ja) 2011-08-31
EP1190487A4 (de) 2003-07-16
AU4591099A (en) 2001-01-22
DE69938434T2 (de) 2008-09-18
AU761220B2 (en) 2003-05-29
CA2377896A1 (en) 2001-01-11
DE69938434D1 (de) 2008-05-08
US6377075B1 (en) 2002-04-23
EP1190487A1 (de) 2002-03-27
WO2001003301A1 (en) 2001-01-11
JP2003504860A (ja) 2003-02-04

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