ATE39033T1 - Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung. - Google Patents
Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung.Info
- Publication number
- ATE39033T1 ATE39033T1 AT84201339T AT84201339T ATE39033T1 AT E39033 T1 ATE39033 T1 AT E39033T1 AT 84201339 T AT84201339 T AT 84201339T AT 84201339 T AT84201339 T AT 84201339T AT E39033 T1 ATE39033 T1 AT E39033T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor device
- manufacturing
- poly
- contacted
- respect
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8303268A NL8303268A (nl) | 1983-09-23 | 1983-09-23 | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
| EP84201339A EP0137554B1 (de) | 1983-09-23 | 1984-09-14 | Verfahren zur Herstellung einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE39033T1 true ATE39033T1 (de) | 1988-12-15 |
Family
ID=19842443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT84201339T ATE39033T1 (de) | 1983-09-23 | 1984-09-14 | Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung. |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US4686759A (de) |
| EP (1) | EP0137554B1 (de) |
| JP (1) | JPS6091672A (de) |
| AT (1) | ATE39033T1 (de) |
| AU (1) | AU572561B2 (de) |
| CA (1) | CA1216965A (de) |
| DE (1) | DE3475453D1 (de) |
| ES (1) | ES536095A0 (de) |
| NL (1) | NL8303268A (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0734455B2 (ja) * | 1986-08-27 | 1995-04-12 | 日本電気株式会社 | 多層配線基板 |
| US5023700A (en) * | 1988-06-17 | 1991-06-11 | Ngk Insulators, Ltd. | Minutely patterned structure |
| JPH02266537A (ja) * | 1989-04-07 | 1990-10-31 | Mitsubishi Electric Corp | 電荷転送素子 |
| JP2855291B2 (ja) * | 1991-03-07 | 1999-02-10 | 富士写真フイルム株式会社 | 固体撮像装置 |
| JPH07297194A (ja) * | 1994-04-25 | 1995-11-10 | Sony Corp | マルチチャンバー装置及び半導体装置の製造方法 |
| KR0165326B1 (ko) * | 1995-12-28 | 1998-12-15 | 김광호 | 전하전송소자 및 그 제조방법 |
| US6218686B1 (en) | 1995-12-28 | 2001-04-17 | Samsung Electronics Co. Ltd. | Charge coupled devices |
| US6096636A (en) * | 1996-02-06 | 2000-08-01 | Micron Technology, Inc. | Methods of forming conductive lines |
| WO1998011608A1 (en) * | 1996-09-10 | 1998-03-19 | Philips Electronics N.V. | Charge coupled device, and method of manufacturing such a device |
| KR100259084B1 (ko) * | 1997-07-25 | 2000-06-15 | 김영환 | 고체촬상소자및이의제조방법 |
| KR100268440B1 (ko) | 1998-09-21 | 2000-10-16 | 윤종용 | 고감도 고체 촬상 장치 |
| US6329219B1 (en) * | 1999-12-22 | 2001-12-11 | Scientific Imaging Technologies, Inc. | Method of processing a semiconductor device |
| WO2013131776A1 (en) * | 2012-03-09 | 2013-09-12 | Construction Research & Technology Gmbh | Amine curable epoxy resin composition |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3681147A (en) * | 1970-01-22 | 1972-08-01 | Ibm | Method for masking semiconductor regions for ion implantation |
| AU2419371A (en) * | 1971-01-11 | 1972-07-13 | Multiple layer metal structure and processing | |
| JPS5316523B2 (de) * | 1973-05-08 | 1978-06-01 | ||
| US3943543A (en) * | 1974-07-26 | 1976-03-09 | Texas Instruments Incorporated | Three level electrode configuration for three phase charge coupled device |
| US3961352A (en) * | 1975-05-30 | 1976-06-01 | Northern Electric Company Limited | Multi-ripple charge coupled device |
| NL7608901A (nl) * | 1976-08-11 | 1978-02-14 | Philips Nv | Werkwijze ter vervaardiging van een halfge- leiderinrichting en halfgeleiderinrichting vervaardigd door middel van een dergelijke werkwijze. |
| US4097885A (en) * | 1976-10-15 | 1978-06-27 | Fairchild Camera And Instrument Corp. | Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material |
| US4262297A (en) * | 1978-12-19 | 1981-04-14 | The General Electric Company Limited | Semiconductor charge transfer device with multi-level polysilicon electrode and bus-line structure |
| JPS5593236A (en) * | 1979-01-10 | 1980-07-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
| DE2923995C2 (de) * | 1979-06-13 | 1985-11-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie |
| JPS5610930A (en) * | 1979-07-09 | 1981-02-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US4380863A (en) * | 1979-12-10 | 1983-04-26 | Texas Instruments Incorporated | Method of making double level polysilicon series transistor devices |
| NL8202777A (nl) * | 1982-07-09 | 1984-02-01 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. |
-
1983
- 1983-09-23 NL NL8303268A patent/NL8303268A/nl not_active Application Discontinuation
-
1984
- 1984-09-12 US US06/649,633 patent/US4686759A/en not_active Expired - Fee Related
- 1984-09-14 AT AT84201339T patent/ATE39033T1/de not_active IP Right Cessation
- 1984-09-14 DE DE8484201339T patent/DE3475453D1/de not_active Expired
- 1984-09-14 EP EP84201339A patent/EP0137554B1/de not_active Expired
- 1984-09-19 AU AU33277/84A patent/AU572561B2/en not_active Expired - Fee Related
- 1984-09-20 ES ES536095A patent/ES536095A0/es active Granted
- 1984-09-20 CA CA000463695A patent/CA1216965A/en not_active Expired
- 1984-09-25 JP JP59198767A patent/JPS6091672A/ja active Granted
-
1987
- 1987-01-22 US US07/005,807 patent/US4831425A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU3327784A (en) | 1985-03-28 |
| NL8303268A (nl) | 1985-04-16 |
| EP0137554A2 (de) | 1985-04-17 |
| US4686759A (en) | 1987-08-18 |
| DE3475453D1 (en) | 1989-01-05 |
| US4831425A (en) | 1989-05-16 |
| JPH0458702B2 (de) | 1992-09-18 |
| ES8601564A1 (es) | 1985-10-16 |
| JPS6091672A (ja) | 1985-05-23 |
| EP0137554B1 (de) | 1988-11-30 |
| AU572561B2 (en) | 1988-05-12 |
| ES536095A0 (es) | 1985-10-16 |
| CA1216965A (en) | 1987-01-20 |
| EP0137554A3 (en) | 1985-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |