ATE65003T1 - Verfahren zur herstellung einer integrierten schaltung aus tantalsiliziden und nach diesem verfahren hergestellte integrierte schaltung. - Google Patents

Verfahren zur herstellung einer integrierten schaltung aus tantalsiliziden und nach diesem verfahren hergestellte integrierte schaltung.

Info

Publication number
ATE65003T1
ATE65003T1 AT84402348T AT84402348T ATE65003T1 AT E65003 T1 ATE65003 T1 AT E65003T1 AT 84402348 T AT84402348 T AT 84402348T AT 84402348 T AT84402348 T AT 84402348T AT E65003 T1 ATE65003 T1 AT E65003T1
Authority
AT
Austria
Prior art keywords
integrated circuit
manufacture
tantalum
tantalum silicide
manufactured
Prior art date
Application number
AT84402348T
Other languages
English (en)
Inventor
Annie Baudrant
Michel Marty
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Application granted granted Critical
Publication of ATE65003T1 publication Critical patent/ATE65003T1/de

Links

Classifications

    • H10P14/6314—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D64/0112—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H10P14/69393—
    • H10P14/6334—
    • H10P14/69215—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Details Of Connecting Devices For Male And Female Coupling (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
AT84402348T 1983-11-22 1984-11-16 Verfahren zur herstellung einer integrierten schaltung aus tantalsiliziden und nach diesem verfahren hergestellte integrierte schaltung. ATE65003T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8318565A FR2555365B1 (fr) 1983-11-22 1983-11-22 Procede de fabrication de circuit integre avec connexions de siliciure de tantale et circuit integre realise selon ce procede
EP84402348A EP0143700B1 (de) 1983-11-22 1984-11-16 Verfahren zur Herstellung einer integrierten Schaltung aus Tantalsiliziden und nach diesem Verfahren hergestellte integrierte Schaltung

Publications (1)

Publication Number Publication Date
ATE65003T1 true ATE65003T1 (de) 1991-07-15

Family

ID=9294381

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84402348T ATE65003T1 (de) 1983-11-22 1984-11-16 Verfahren zur herstellung einer integrierten schaltung aus tantalsiliziden und nach diesem verfahren hergestellte integrierte schaltung.

Country Status (6)

Country Link
US (2) US4593454A (de)
EP (1) EP0143700B1 (de)
JP (1) JPS60138942A (de)
AT (1) ATE65003T1 (de)
DE (1) DE3484769D1 (de)
FR (1) FR2555365B1 (de)

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US5059546A (en) * 1987-05-01 1991-10-22 Texas Instruments Incorporated BICMOS process for forming shallow NPN emitters and mosfet source/drains
US4874715A (en) * 1987-05-20 1989-10-17 Texas Instruments Incorporated Read only memory with improved channel length control and method of forming
JP2659714B2 (ja) * 1987-07-21 1997-09-30 株式会社日立製作所 半導体集積回路装置
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US4951103A (en) * 1988-06-03 1990-08-21 Texas Instruments, Incorporated Fast, trench isolated, planar flash EEPROMS with silicided bitlines
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JP2757927B2 (ja) * 1990-06-28 1998-05-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体基板上の隔置されたシリコン領域の相互接続方法
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US5387811A (en) * 1991-01-25 1995-02-07 Nec Corporation Composite semiconductor device with a particular bipolar structure
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Also Published As

Publication number Publication date
FR2555365A1 (fr) 1985-05-24
US4714951A (en) 1987-12-22
US4593454A (en) 1986-06-10
FR2555365B1 (fr) 1986-08-29
JPS60138942A (ja) 1985-07-23
EP0143700B1 (de) 1991-07-03
JPH0418702B2 (de) 1992-03-27
EP0143700A3 (en) 1985-09-18
DE3484769D1 (de) 1991-08-08
EP0143700A2 (de) 1985-06-05

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