ATE377845T1 - Halbleiter-strahlungsdetektionselement - Google Patents

Halbleiter-strahlungsdetektionselement

Info

Publication number
ATE377845T1
ATE377845T1 AT02718533T AT02718533T ATE377845T1 AT E377845 T1 ATE377845 T1 AT E377845T1 AT 02718533 T AT02718533 T AT 02718533T AT 02718533 T AT02718533 T AT 02718533T AT E377845 T1 ATE377845 T1 AT E377845T1
Authority
AT
Austria
Prior art keywords
compound
inxcdytez
tellurium
cadmium
semiconductor crystal
Prior art date
Application number
AT02718533T
Other languages
English (en)
Inventor
Miki Moriyama
Masaki Murakami
Atsushi Kyan
Ryoichi Ohno
Original Assignee
Acrorad Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acrorad Co Ltd filed Critical Acrorad Co Ltd
Application granted granted Critical
Publication of ATE377845T1 publication Critical patent/ATE377845T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
AT02718533T 2001-05-15 2002-04-11 Halbleiter-strahlungsdetektionselement ATE377845T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001144313A JP5135651B2 (ja) 2001-05-15 2001-05-15 半導体放射線検出素子

Publications (1)

Publication Number Publication Date
ATE377845T1 true ATE377845T1 (de) 2007-11-15

Family

ID=18990280

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02718533T ATE377845T1 (de) 2001-05-15 2002-04-11 Halbleiter-strahlungsdetektionselement

Country Status (9)

Country Link
US (1) US6975012B2 (de)
EP (1) EP1391940B1 (de)
JP (1) JP5135651B2 (de)
AT (1) ATE377845T1 (de)
CA (1) CA2447403C (de)
DE (1) DE60223358T2 (de)
RU (1) RU2281531C2 (de)
TW (1) TW541708B (de)
WO (1) WO2002093654A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237126B2 (en) 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
CN102016639A (zh) * 2008-04-24 2011-04-13 住友重机械工业株式会社 半导体探测器模块及使用该半导体探测器模块的正电子断层摄影装置
GB0908583D0 (en) * 2009-05-19 2009-06-24 Durham Scient Crystals Ltd Semiconductor device contacts
US8165266B2 (en) * 2009-09-10 2012-04-24 General Electric Company Transverse scanning bone densitometer and detector used in same
DE102012215041A1 (de) * 2012-08-23 2014-02-27 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Halbleiterelementes eines direktkonvertierenden Röntgendetektors
JP6433644B2 (ja) 2013-06-07 2018-12-05 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ 半導体ウェハのダイシング方法
RU2578103C1 (ru) * 2014-11-10 2016-03-20 Федеральное государственное казенное военное образовательное учреждение высшего профессионального образования "Военная академия Ракетных войск стратегического назначения имени Петра Великого" Министерства обороны Российской Федерации Полупроводниковый комбинированный приемник электромагнитного излучения

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
JPS5630771A (en) * 1979-08-20 1981-03-27 Matsushita Electric Ind Co Ltd Manufacture of photoreceptor
US4613495A (en) * 1984-07-20 1986-09-23 Hughes Aircraft Company Growth of single crystal Cadmium-Indium-Telluride
JPS62115391A (ja) * 1985-11-13 1987-05-27 Nippon Mining Co Ltd ＣｄＴｅ放射線検出器
JPH03248578A (ja) * 1990-02-27 1991-11-06 Nikko Kyodo Co Ltd 半導体放射線検出素子の製造方法
US5510644A (en) * 1992-03-23 1996-04-23 Martin Marietta Corporation CDTE x-ray detector for use at room temperature
US5391882A (en) * 1993-06-11 1995-02-21 Santa Barbara Research Center Semiconductor gamma ray detector including compositionally graded, leakage current blocking potential barrier layers and method of fabricating the detector
US6030853A (en) * 1993-08-13 2000-02-29 Drs Fpa, L.P. Method of producing intrinsic p-type HgCdTe using CdTe capping layer
JPH07221340A (ja) * 1994-01-31 1995-08-18 Hitachi Chem Co Ltd 半導体放射線検出器
US6011264A (en) * 1994-08-11 2000-01-04 Urigal Technologies, Ltd. Apparatus, system and method for gamma ray and x-ray detection
JP4397012B2 (ja) * 2001-11-05 2010-01-13 独立行政法人 宇宙航空研究開発機構 孔型電極を有する半導体イメージセンサ及びその製造方法

Also Published As

Publication number Publication date
WO2002093654A1 (fr) 2002-11-21
EP1391940A1 (de) 2004-02-25
EP1391940B1 (de) 2007-11-07
TW541708B (en) 2003-07-11
RU2281531C2 (ru) 2006-08-10
JP5135651B2 (ja) 2013-02-06
CA2447403C (en) 2012-09-04
EP1391940A4 (de) 2006-08-09
DE60223358D1 (de) 2007-12-20
RU2003133302A (ru) 2005-03-20
US6975012B2 (en) 2005-12-13
DE60223358T2 (de) 2008-08-28
JP2002344000A (ja) 2002-11-29
US20040129994A1 (en) 2004-07-08
CA2447403A1 (en) 2002-11-21

Similar Documents

Publication Publication Date Title
Kang et al. Simple hydrogen plasma doping process of amorphous indium gallium zinc oxide-based phototransistors for visible light detection
DE502005004646D1 (de) Solarzelle mit integrierter schutzdiode
TW513767B (en) Semiconductor device and its manufacturing method
ATE418792T1 (de) Photoelektrische umwandlungsvorrichtung und bildaufnahmesystem
DE69905085T2 (de) Halbleiterscheibe Poliervorrichtung mit bewegbarem Fenster
WO1999045595A3 (de) Photodetektor und seine verwendung
ATE377845T1 (de) Halbleiter-strahlungsdetektionselement
EP1249871A3 (de) Strahlungsdetektor
DE69210063D1 (de) Integrierte Halbleiter-Schaltungseinheit mit Detektionsschaltung für Substrat-Potential
DE69101818T2 (de) Halbleitersubstrat-Ätzgerät.
DE69225801D1 (de) Passivierung mit hoher leistung fuer halbleiteranordnungen
RU94006800A (ru) Фотошаблон и способ его изготовления
DE59407460D1 (de) Halbleiterbauelement mit hoher durchbruchsspannung
DE69841754D1 (de) Detektor für elektromagnetische Strahlung, diesen verwendende Pixelstruktur mit hoher Empfindlichkeit und Verfahren zu seiner Herstellung
Panda et al. Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor
Caria et al. Gallium arsenide photodetectors for imaging in the far ultraviolet region
DE69124824D1 (de) Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält
DE69219509T2 (de) Halbleiteranordnung mit Substrat
KR910013498A (ko) 반도체장치 및 그 제조방법
Tiwari et al. Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum
Panda et al. Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity
DE59610134D1 (de) Halbleiterheterostruktur-strahlungsdetektor, mit zwei spektralen empfindlichkeitsbereichen
JPS5415674A (en) Semiconductor device containing schottky barrier
DE69426185D1 (de) Halbleiterbauelement geschützt durch Dioden
Khudaverdyan Photo-detecting characteristics of double barrier structures

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties