DE69124824D1 - Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält - Google Patents

Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält

Info

Publication number
DE69124824D1
DE69124824D1 DE69124824T DE69124824T DE69124824D1 DE 69124824 D1 DE69124824 D1 DE 69124824D1 DE 69124824 T DE69124824 T DE 69124824T DE 69124824 T DE69124824 T DE 69124824T DE 69124824 D1 DE69124824 D1 DE 69124824D1
Authority
DE
Germany
Prior art keywords
photoconductive layer
atoms
fluorine atoms
amount
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124824T
Other languages
English (en)
Other versions
DE69124824T2 (de
Inventor
Hiroaki Niino
Tetsuya Takei
Ryuji Okamura
Toshiyasu Shirasuna
Shigeru Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69124824D1 publication Critical patent/DE69124824D1/de
Publication of DE69124824T2 publication Critical patent/DE69124824T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Light Receiving Elements (AREA)
DE69124824T 1990-04-26 1991-04-25 Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält Expired - Fee Related DE69124824T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11088590 1990-04-26
JP11283590 1990-04-27

Publications (2)

Publication Number Publication Date
DE69124824D1 true DE69124824D1 (de) 1997-04-10
DE69124824T2 DE69124824T2 (de) 1997-07-10

Family

ID=26450404

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124824T Expired - Fee Related DE69124824T2 (de) 1990-04-26 1991-04-25 Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält

Country Status (5)

Country Link
US (1) US5656404A (de)
EP (1) EP0454456B1 (de)
JP (1) JP2962851B2 (de)
AT (1) ATE149701T1 (de)
DE (1) DE69124824T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0618508B1 (de) * 1992-06-18 1997-03-05 Canon Kabushiki Kaisha Bildempfangsschicht bestehend aus nicht-monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung
JP3134974B2 (ja) * 1993-03-15 2001-02-13 キヤノン株式会社 電子写真用光受容部材
EP0679955B9 (de) * 1994-04-27 2005-01-12 Canon Kabushiki Kaisha Elektrophotographisches lichtempfindliches Element und seine Herstellung
JP3530676B2 (ja) 1995-04-26 2004-05-24 キヤノン株式会社 光受容部材の製造方法、該光受容部材、該光受容部材を有する電子写真装置及び該光受容部材を用いた電子写真プロセス
JP3368109B2 (ja) * 1995-08-23 2003-01-20 キヤノン株式会社 電子写真用光受容部材
JP3754751B2 (ja) * 1996-05-23 2006-03-15 キヤノン株式会社 光受容部材
JP3559655B2 (ja) * 1996-08-29 2004-09-02 キヤノン株式会社 電子写真用光受容部材
JPH1090929A (ja) * 1996-09-11 1998-04-10 Canon Inc 電子写真用光受容部材
JPH1165146A (ja) * 1997-08-22 1999-03-05 Canon Inc 電子写真用光受容部材
US5900290A (en) * 1998-02-13 1999-05-04 Sharp Microelectronics Technology, Inc. Method of making low-k fluorinated amorphous carbon dielectric
JP3920103B2 (ja) 2002-01-31 2007-05-30 大阪府 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
JP2004296558A (ja) * 2003-03-26 2004-10-21 Osaka Prefecture 絶縁層埋め込み型単結晶炭化シリコン基板の製造方法及びその製造装置
JP6128885B2 (ja) 2013-02-22 2017-05-17 キヤノン株式会社 電子写真感光体およびその製造方法ならびに電子写真装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
US4510224A (en) * 1982-05-06 1985-04-09 Konishiroku Photo Industry Co., Ltd. Electrophotographic photoreceptors having amorphous silicon photoconductors
JPS6041046A (ja) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd 電子写真用感光体
US4624905A (en) * 1984-02-14 1986-11-25 Sanyo Electric Co., Ltd. Electrophotographic photosensitive member
DE3511315A1 (de) * 1984-03-28 1985-10-24 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Elektrostatographisches, insbesondere elektrophotographisches aufzeichnungsmaterial
US4673629A (en) * 1984-12-31 1987-06-16 Konishiroku Photo Industry Co., Ltd. Photoreceptor having amorphous silicon layers
JPS62141784A (ja) * 1985-12-17 1987-06-25 Canon Inc 光導電素子
US4795691A (en) * 1986-04-17 1989-01-03 Canon Kabushiki Kaisha Layered amorphous silicon photoconductor with surface layer having specific refractive index properties

Also Published As

Publication number Publication date
JPH04218060A (ja) 1992-08-07
DE69124824T2 (de) 1997-07-10
ATE149701T1 (de) 1997-03-15
EP0454456B1 (de) 1997-03-05
EP0454456A1 (de) 1991-10-30
US5656404A (en) 1997-08-12
JP2962851B2 (ja) 1999-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee