ATE366469T1 - Halbleiterlaserbauelement und verfahren zu seiner herstellung - Google Patents
Halbleiterlaserbauelement und verfahren zu seiner herstellungInfo
- Publication number
- ATE366469T1 ATE366469T1 AT01925886T AT01925886T ATE366469T1 AT E366469 T1 ATE366469 T1 AT E366469T1 AT 01925886 T AT01925886 T AT 01925886T AT 01925886 T AT01925886 T AT 01925886T AT E366469 T1 ATE366469 T1 AT E366469T1
- Authority
- AT
- Austria
- Prior art keywords
- active layer
- waveguide region
- region
- light
- semiconductor laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000172797 | 2000-06-08 | ||
JP2001116197 | 2001-04-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE366469T1 true ATE366469T1 (de) | 2007-07-15 |
Family
ID=26593596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01925886T ATE366469T1 (de) | 2000-06-08 | 2001-04-25 | Halbleiterlaserbauelement und verfahren zu seiner herstellung |
Country Status (11)
Country | Link |
---|---|
US (3) | US6925101B2 (de) |
EP (1) | EP1306944B1 (de) |
KR (2) | KR100763827B1 (de) |
CN (1) | CN1251372C (de) |
AT (1) | ATE366469T1 (de) |
AU (1) | AU2001252558A1 (de) |
CA (1) | CA2411445C (de) |
DE (1) | DE60129227T2 (de) |
MY (1) | MY135464A (de) |
TW (1) | TW490898B (de) |
WO (1) | WO2001095446A1 (de) |
Families Citing this family (128)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3797151B2 (ja) * | 2001-07-05 | 2006-07-12 | ソニー株式会社 | レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置 |
JP3878868B2 (ja) * | 2002-03-01 | 2007-02-07 | シャープ株式会社 | GaN系レーザ素子 |
JP2004006498A (ja) * | 2002-05-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP4216011B2 (ja) * | 2002-07-17 | 2009-01-28 | シャープ株式会社 | 窒化物半導体レーザ素子チップとそれを含むレーザ装置 |
US7076130B2 (en) * | 2002-09-11 | 2006-07-11 | Adc Telecommunications, Inc. | Semiconductor optical device having asymmetric ridge waveguide and method of making same |
US6927412B2 (en) | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
JP2006511944A (ja) * | 2002-12-20 | 2006-04-06 | クリー インコーポレイテッド | 半導体メサ構造および導電性接合部を含む電子素子ならびに関連素子を形成する方法 |
KR100964399B1 (ko) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
JP2004287093A (ja) * | 2003-03-20 | 2004-10-14 | Fujitsu Ltd | 光導波路、光デバイスおよび光導波路の製造方法 |
US6870969B2 (en) * | 2003-04-23 | 2005-03-22 | Intel Corporation | Method and apparatus for phase shifting and optical beam in an optical device with reduced contact loss |
US7301979B2 (en) * | 2003-05-22 | 2007-11-27 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
US6954558B2 (en) * | 2003-06-24 | 2005-10-11 | Intel Corporation | Method and apparatus for phase shifting an optical beam in an optical device |
JP4472278B2 (ja) * | 2003-06-26 | 2010-06-02 | 三菱電機株式会社 | 半導体レーザ素子 |
US20050116243A1 (en) * | 2003-12-01 | 2005-06-02 | Atsunori Mochida | Semiconductor laser device and its manufacturing method |
JP4751024B2 (ja) * | 2004-01-16 | 2011-08-17 | シャープ株式会社 | 半導体レーザおよびその製造方法 |
JP2005209952A (ja) * | 2004-01-23 | 2005-08-04 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびそれを用いた光ピックアップ装置 |
JP2005268581A (ja) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP2005347665A (ja) * | 2004-06-07 | 2005-12-15 | Fujitsu Ltd | 光半導体装置及びその製造方法 |
JP4613304B2 (ja) * | 2004-09-07 | 2011-01-19 | 独立行政法人産業技術総合研究所 | 量子ナノ構造半導体レーザ |
JP3857294B2 (ja) * | 2004-11-11 | 2006-12-13 | 三菱電機株式会社 | 半導体レーザ |
KR101100425B1 (ko) * | 2005-05-07 | 2011-12-30 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
US7280712B2 (en) * | 2005-08-04 | 2007-10-09 | Intel Corporation | Method and apparatus for phase shifiting an optical beam in an optical device |
US7352788B2 (en) * | 2005-08-15 | 2008-04-01 | Avago Technologies Ecbu Ip (Singapore) Pte, Ltd. | Nitride semiconductor vertical cavity surface emitting laser |
KR100809209B1 (ko) * | 2006-04-25 | 2008-02-29 | 삼성전기주식회사 | 비극성 m면 질화물 반도체 제조방법 |
US20070280309A1 (en) * | 2006-05-23 | 2007-12-06 | Ansheng Liu | Optical waveguide with single sided coplanar contact optical phase modulator |
JP4948134B2 (ja) * | 2006-11-22 | 2012-06-06 | シャープ株式会社 | 窒化物半導体発光素子 |
US7773650B2 (en) * | 2006-12-28 | 2010-08-10 | Nichia Corporation | Nitride semiconductor laser element |
US7646798B2 (en) * | 2006-12-28 | 2010-01-12 | Nichia Corporation | Nitride semiconductor laser element |
US7668218B2 (en) * | 2007-02-20 | 2010-02-23 | Nichia Corporation | Nitride semiconductor laser element |
DE102007051315B4 (de) | 2007-09-24 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
US8242006B2 (en) * | 2007-12-21 | 2012-08-14 | General Electric Company | Smooth electrode and method of fabricating same |
JP2009200478A (ja) * | 2008-01-21 | 2009-09-03 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
US8144743B2 (en) * | 2008-03-05 | 2012-03-27 | Rohm Co., Ltd. | Nitride based semiconductor device and fabrication method for the same |
DE102008016613B4 (de) * | 2008-04-01 | 2010-04-15 | Epcos Ag | Verfahren zur Herstellung eines elektrischen Bauelements mit mindestens einer dielektrischen Schicht und ein elektrisches Bauelement mit mindestens einer dielektrischen Schicht |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
KR101479623B1 (ko) * | 2008-07-22 | 2015-01-08 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
CN102131957A (zh) * | 2008-08-28 | 2011-07-20 | 硅绝缘体技术有限公司 | 基于紫外线吸收的监测器和对氯化物气流的控制 |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
WO2010120819A1 (en) * | 2009-04-13 | 2010-10-21 | Kaai, Inc. | Optical device structure using gan substrates for laser applications |
US8294179B1 (en) | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8293628B2 (en) * | 2009-05-28 | 2012-10-23 | Technion Research & Development Foundation Ltd. | Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8384300B2 (en) * | 2009-09-01 | 2013-02-26 | Topanga Technologies, Inc. | Integrated RF electrodeless plasma lamp device and methods |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
KR20110042560A (ko) * | 2009-10-19 | 2011-04-27 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법 및 발광소자 패키지 |
TWI411128B (zh) * | 2009-10-20 | 2013-10-01 | Univ Nat Cheng Kung | 發光二極體晶片之製造方法 |
KR100999779B1 (ko) | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US8367450B2 (en) * | 2010-02-21 | 2013-02-05 | Technion Research & Development Foundation Ltd. | Light emitting system and method of fabricating and using the same |
US8492702B2 (en) * | 2010-02-21 | 2013-07-23 | Technion Research & Development Foundation Limited | Method and system for detecting light having a light absorbing layer with bandgap modifying atoms |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
JP5742344B2 (ja) * | 2011-03-20 | 2015-07-01 | 富士通株式会社 | 受光素子、光受信器及び光受信モジュール |
US8913897B2 (en) * | 2011-04-29 | 2014-12-16 | Huawei Technologies Co., Ltd. | Laser diode, method for manufacturing laser diode and passive optical network system |
DE102011100175B4 (de) * | 2011-05-02 | 2021-12-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
US8603847B2 (en) * | 2012-01-16 | 2013-12-10 | Varian Semiconductor Equipment Associates, Inc. | Integration of current blocking layer and n-GaN contact doping by implantation |
JP2013149724A (ja) * | 2012-01-18 | 2013-08-01 | Sumitomo Electric Ind Ltd | 光集積素子の製造方法 |
JP5880065B2 (ja) | 2012-01-18 | 2016-03-08 | 住友電気工業株式会社 | 光集積素子の製造方法 |
JP5880063B2 (ja) * | 2012-01-18 | 2016-03-08 | 住友電気工業株式会社 | 光集積素子の製造方法 |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9099843B1 (en) | 2012-07-19 | 2015-08-04 | Soraa Laser Diode, Inc. | High operating temperature laser diodes |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
DE102012111512B4 (de) * | 2012-11-28 | 2021-11-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterstreifenlaser |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
DE102014105191B4 (de) | 2014-04-11 | 2019-09-19 | Osram Opto Semiconductors Gmbh | Halbleiter-Streifenlaser und Halbleiterbauteil |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
CN104184045B (zh) * | 2014-08-22 | 2017-04-05 | 华中科技大学 | 一种定波长单纵模工作的脊波导分布反馈半导体激光器 |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
JP2016092364A (ja) | 2014-11-11 | 2016-05-23 | スタンレー電気株式会社 | 発光装置及び灯具 |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
JP6409614B2 (ja) | 2015-02-23 | 2018-10-24 | 日亜化学工業株式会社 | 半導体素子の製造方法及び半導体素子 |
KR102347387B1 (ko) * | 2015-03-31 | 2022-01-06 | 서울바이오시스 주식회사 | 자외선 발광 소자 |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
DE102015116712A1 (de) | 2015-10-01 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US9847454B2 (en) * | 2015-10-02 | 2017-12-19 | Epistar Corporation | Light-emitting device |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US11495942B2 (en) * | 2016-10-28 | 2022-11-08 | Nlight, Inc. | Method, system and apparatus for higher order mode suppression |
WO2018168430A1 (ja) * | 2017-03-16 | 2018-09-20 | パナソニックIpマネジメント株式会社 | 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
KR102651547B1 (ko) * | 2018-09-07 | 2024-03-28 | 삼성전자주식회사 | 발광 장치 및 이를 포함하는 디스플레이 장치 |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
WO2020255281A1 (ja) * | 2019-06-19 | 2020-12-24 | 三菱電機株式会社 | 半導体光素子 |
CN114498299B (zh) * | 2022-01-21 | 2023-01-31 | 度亘激光技术(苏州)有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US165635A (en) * | 1875-07-13 | Improvement in watch-key combination tools | ||
JPS52153686A (en) | 1976-06-16 | 1977-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device |
JPS603177A (ja) | 1983-06-21 | 1985-01-09 | Toshiba Corp | 半導体レ−ザ装置 |
JPS60192379A (ja) | 1984-03-12 | 1985-09-30 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
JPH02199889A (ja) * | 1989-01-30 | 1990-08-08 | Toshiba Corp | 半導体レーザ装置及びその製造方法 |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5565693A (en) * | 1993-01-07 | 1996-10-15 | Nec Corporation | Semiconductor optical integrated circuits |
JP2814906B2 (ja) | 1993-01-07 | 1998-10-27 | 日本電気株式会社 | 光半導体素子およびその製造方法 |
JP2601173B2 (ja) | 1993-12-20 | 1997-04-16 | 日本電気株式会社 | 半導体光導波路およびその製造方法 |
FR2730821B1 (fr) * | 1995-02-22 | 1997-04-30 | Alcatel Optronics | Guide optique segmente pouvant notamment etre inclus dans un dispositif semiconducteur |
US5946336A (en) | 1996-01-11 | 1999-08-31 | Canon Kabushiki Kaisha | Optical semiconductor apparatus, fabrication method thereof, modulation method therefor, light source apparatus and optical communication system or method using the same |
CA2276335C (en) * | 1997-01-09 | 2006-04-11 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6014396A (en) * | 1997-09-05 | 2000-01-11 | Sdl, Inc. | Flared semiconductor optoelectronic device |
JP3604278B2 (ja) | 1998-02-17 | 2004-12-22 | 日亜化学工業株式会社 | 窒化物半導体レーザー素子 |
JP3630977B2 (ja) * | 1998-03-19 | 2005-03-23 | キヤノン株式会社 | 位相調整領域を有するレーザ及びその使用法 |
JP4166885B2 (ja) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
JP2000031599A (ja) | 1998-07-14 | 2000-01-28 | Sony Corp | 窒化物系iii−v族化合物半導体レーザ |
TW451535B (en) * | 1998-09-04 | 2001-08-21 | Sony Corp | Semiconductor device and package, and fabrication method thereof |
JP3031415B1 (ja) * | 1998-10-06 | 2000-04-10 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP2000353859A (ja) * | 1999-06-10 | 2000-12-19 | Sharp Corp | 光導波路及び半導体レーザ素子 |
US6657237B2 (en) | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
ATE487255T1 (de) * | 2001-05-31 | 2010-11-15 | Nichia Corp | Halbleiterlaserelement |
-
2001
- 2001-04-25 KR KR1020027016670A patent/KR100763827B1/ko active IP Right Grant
- 2001-04-25 WO PCT/JP2001/003548 patent/WO2001095446A1/ja active IP Right Grant
- 2001-04-25 KR KR1020067005150A patent/KR100763829B1/ko active IP Right Grant
- 2001-04-25 DE DE60129227T patent/DE60129227T2/de not_active Expired - Lifetime
- 2001-04-25 AT AT01925886T patent/ATE366469T1/de not_active IP Right Cessation
- 2001-04-25 EP EP01925886A patent/EP1306944B1/de not_active Expired - Lifetime
- 2001-04-25 CA CA2411445A patent/CA2411445C/en not_active Expired - Lifetime
- 2001-04-25 AU AU2001252558A patent/AU2001252558A1/en not_active Abandoned
- 2001-04-25 CN CNB018108644A patent/CN1251372C/zh not_active Expired - Fee Related
- 2001-04-25 US US10/297,332 patent/US6925101B2/en not_active Expired - Lifetime
- 2001-06-07 MY MYPI20012673A patent/MY135464A/en unknown
- 2001-06-08 TW TW090113969A patent/TW490898B/zh not_active IP Right Cessation
-
2005
- 2005-03-28 US US11/090,242 patent/US7470555B2/en not_active Expired - Fee Related
-
2008
- 2008-11-19 US US12/274,101 patent/US7709281B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
MY135464A (en) | 2008-04-30 |
KR100763829B1 (ko) | 2007-10-05 |
CA2411445A1 (en) | 2002-12-04 |
EP1306944A4 (de) | 2005-11-30 |
US20050170542A1 (en) | 2005-08-04 |
EP1306944A1 (de) | 2003-05-02 |
TW490898B (en) | 2002-06-11 |
KR20030007907A (ko) | 2003-01-23 |
WO2001095446A1 (fr) | 2001-12-13 |
CN1251372C (zh) | 2006-04-12 |
US20090129418A1 (en) | 2009-05-21 |
US6925101B2 (en) | 2005-08-02 |
CN1434996A (zh) | 2003-08-06 |
CA2411445C (en) | 2011-08-16 |
US7470555B2 (en) | 2008-12-30 |
EP1306944B1 (de) | 2007-07-04 |
KR20060036488A (ko) | 2006-04-28 |
DE60129227T2 (de) | 2008-03-13 |
US20030128729A1 (en) | 2003-07-10 |
KR100763827B1 (ko) | 2007-10-05 |
AU2001252558A1 (en) | 2001-12-17 |
US7709281B2 (en) | 2010-05-04 |
DE60129227D1 (de) | 2007-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE366469T1 (de) | Halbleiterlaserbauelement und verfahren zu seiner herstellung | |
JP2004523113A5 (de) | ||
WO2002101894A1 (fr) | Element laser a semi-conducteurs | |
DE69610101T2 (de) | Mindestens fünflagige optische vorrichtung | |
JP2008096484A (ja) | 光半導体装置 | |
DE602006002459D1 (de) | Optoelektronische Vorrichtung mit einem Laser mit integriertem Modulator und Herstellungsverfahren dafür | |
IL160688A0 (en) | A semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same | |
ATE488038T1 (de) | Photonische integrierte bauelemente mit mehreren ebenen | |
SE9800756D0 (sv) | A method of fabricating mirrors in polymer waveguides | |
EP1146614A3 (de) | Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren | |
JP2006251063A (ja) | 光コネクタ、光結合方法及び光素子 | |
JP2003177368A5 (de) | ||
JP6233300B2 (ja) | 光位相変調素子、素子設定方法、光機能回路、及び光マトリックス回路 | |
ATE491964T1 (de) | Optischer wellenleiter | |
WO2003030317A1 (fr) | Dispositif laser a semi-conducteur a base de gan | |
TW346694B (en) | Self-pulsation semiconductor laser | |
ATE430393T1 (de) | Optoelektronische einrichtungen mit gefaltetem resonator | |
ATE291278T1 (de) | Verfahren zur herstellung eines halbleiterbauelements | |
Galarza et al. | A new spot-size converter concept using fiber-matched antiresonant reflecting optical waveguides | |
Ledentsov et al. | Passive cavity laser and tilted wave laser for Bessel-like beam coherently coupled bars and stacks | |
ATE552632T1 (de) | Verfahren und vorrichtung zur erzeugung und verstärkung von licht in einer halbführenden faser mit kern mit hohem seitenverhältnis | |
ATE139037T1 (de) | Optischer baustein mit optischem koppler zum aufspalten oder zusammenführen von licht und verfahren zu dessen herstellung | |
WO2004005982A3 (de) | Mikrostrukturierung von lichtwellenleitern zur erzeugung von optischen funktionselementen | |
KR950034943A (ko) | 광디바이스 | |
JP3925706B2 (ja) | 半導体レーザ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |