ATE291278T1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents
Verfahren zur herstellung eines halbleiterbauelementsInfo
- Publication number
- ATE291278T1 ATE291278T1 AT02779855T AT02779855T ATE291278T1 AT E291278 T1 ATE291278 T1 AT E291278T1 AT 02779855 T AT02779855 T AT 02779855T AT 02779855 T AT02779855 T AT 02779855T AT E291278 T1 ATE291278 T1 AT E291278T1
- Authority
- AT
- Austria
- Prior art keywords
- producing
- semiconductor component
- layers
- laser device
- lasers
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
- G02B6/4221—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements involving a visual detection of the position of the elements, e.g. by using a microscope or a camera
- G02B6/4224—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements involving a visual detection of the position of the elements, e.g. by using a microscope or a camera using visual alignment markings, e.g. index methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/946—Step and repeat
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0124427.6A GB0124427D0 (en) | 2001-10-11 | 2001-10-11 | A method of manufacturing a semiconductor device |
PCT/IE2002/000141 WO2003044871A1 (en) | 2001-10-11 | 2002-10-07 | A method of manufacturing a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE291278T1 true ATE291278T1 (de) | 2005-04-15 |
Family
ID=9923645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02779855T ATE291278T1 (de) | 2001-10-11 | 2002-10-07 | Verfahren zur herstellung eines halbleiterbauelements |
Country Status (8)
Country | Link |
---|---|
US (1) | US7083994B2 (de) |
EP (1) | EP1446841B1 (de) |
JP (1) | JP2005510089A (de) |
AT (1) | ATE291278T1 (de) |
AU (1) | AU2002343185A1 (de) |
DE (1) | DE60203322T2 (de) |
GB (1) | GB0124427D0 (de) |
WO (1) | WO2003044871A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1854189B1 (de) | 2005-02-18 | 2015-04-08 | Binoptics Corporation | Hochzuverlässige photonische vorrichtungen mit geätzten facetten |
IES20050587A2 (en) * | 2005-09-08 | 2007-02-21 | Eblana Photonics Ltd | Multi-stripe laser diode designs which exhibit a high degree of manafacturability |
JP4963060B2 (ja) * | 2005-11-30 | 2012-06-27 | シャープ株式会社 | 窒化物系半導体レーザ素子及びその製造方法 |
US7615404B2 (en) * | 2006-10-31 | 2009-11-10 | Intel Corporation | High-contrast laser mark on substrate surfaces |
DE102009056387B9 (de) | 2009-10-30 | 2020-05-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden |
US8628988B2 (en) * | 2011-12-21 | 2014-01-14 | Emcore Corporation | Conformal metallization process for the fabrication of semiconductor laser devices |
US9230815B2 (en) * | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
US10490971B2 (en) | 2017-06-09 | 2019-11-26 | International Business Machines Corporation | Self-alignment features for III-V ridge process and angled facet die |
GB202103138D0 (en) * | 2021-03-05 | 2021-04-21 | Sivers Photonics Ltd | Photonic device with fiducial marks for alignment of an optical component |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0239481A (ja) * | 1988-07-28 | 1990-02-08 | Seiko Epson Corp | 半導体レーザ製造方法 |
JPH04262589A (ja) * | 1991-02-15 | 1992-09-17 | Nec Kagoshima Ltd | 光半導体装置の製造方法 |
US5259925A (en) * | 1992-06-05 | 1993-11-09 | Mcdonnell Douglas Corporation | Method of cleaning a plurality of semiconductor devices |
DE69204828T2 (de) * | 1992-06-09 | 1996-05-02 | Ibm | Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer. |
JPH0864906A (ja) * | 1994-08-24 | 1996-03-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製法 |
US5790737A (en) * | 1995-11-21 | 1998-08-04 | Mitsubishi Denki Kabushiki Kaisha | Optical semiconductor device |
JP3653150B2 (ja) * | 1995-11-21 | 2005-05-25 | 三菱電機株式会社 | 半導体レーザチップ及びその製造方法 |
US6289030B1 (en) * | 1997-01-31 | 2001-09-11 | Hewlett-Packard Company | Fabrication of semiconductor devices |
JP3822976B2 (ja) * | 1998-03-06 | 2006-09-20 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP2000231041A (ja) * | 1999-02-10 | 2000-08-22 | Nec Corp | 光半導体素子と光伝送路の結合構造及びその結合方法 |
IES20000820A2 (en) * | 2000-10-11 | 2002-05-29 | Nat Univ Ireland | A single frequency laser |
-
2001
- 2001-10-11 GB GBGB0124427.6A patent/GB0124427D0/en not_active Ceased
-
2002
- 2002-10-07 EP EP02779855A patent/EP1446841B1/de not_active Expired - Lifetime
- 2002-10-07 AU AU2002343185A patent/AU2002343185A1/en not_active Abandoned
- 2002-10-07 JP JP2003546410A patent/JP2005510089A/ja not_active Withdrawn
- 2002-10-07 WO PCT/IE2002/000141 patent/WO2003044871A1/en active IP Right Grant
- 2002-10-07 AT AT02779855T patent/ATE291278T1/de not_active IP Right Cessation
- 2002-10-07 US US10/492,061 patent/US7083994B2/en not_active Expired - Lifetime
- 2002-10-07 DE DE60203322T patent/DE60203322T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60203322D1 (de) | 2005-04-21 |
WO2003044871A1 (en) | 2003-05-30 |
JP2005510089A (ja) | 2005-04-14 |
DE60203322T2 (de) | 2006-04-06 |
EP1446841A1 (de) | 2004-08-18 |
GB0124427D0 (en) | 2001-12-05 |
AU2002343185A1 (en) | 2003-06-10 |
US7083994B2 (en) | 2006-08-01 |
EP1446841B1 (de) | 2005-03-16 |
US20050032264A1 (en) | 2005-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |