ATE363733T1 - Nanoelektronische bauelemente und schaltungen - Google Patents

Nanoelektronische bauelemente und schaltungen

Info

Publication number
ATE363733T1
ATE363733T1 AT02764075T AT02764075T ATE363733T1 AT E363733 T1 ATE363733 T1 AT E363733T1 AT 02764075 T AT02764075 T AT 02764075T AT 02764075 T AT02764075 T AT 02764075T AT E363733 T1 ATE363733 T1 AT E363733T1
Authority
AT
Austria
Prior art keywords
lines
diode
diode devices
circuits
substrate
Prior art date
Application number
AT02764075T
Other languages
English (en)
Inventor
Aimin Song
Paer Omling
Original Assignee
Plastic Eprint Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plastic Eprint Ltd filed Critical Plastic Eprint Ltd
Application granted granted Critical
Publication of ATE363733T1 publication Critical patent/ATE363733T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT02764075T 2001-04-20 2002-04-18 Nanoelektronische bauelemente und schaltungen ATE363733T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0109782.3A GB0109782D0 (en) 2001-04-20 2001-04-20 Nanoelectronic devices and circuits

Publications (1)

Publication Number Publication Date
ATE363733T1 true ATE363733T1 (de) 2007-06-15

Family

ID=9913182

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02764075T ATE363733T1 (de) 2001-04-20 2002-04-18 Nanoelektronische bauelemente und schaltungen

Country Status (12)

Country Link
US (1) US7224026B2 (de)
EP (1) EP1380053B1 (de)
JP (1) JP4902094B2 (de)
KR (1) KR100884040B1 (de)
CN (1) CN100377354C (de)
AT (1) ATE363733T1 (de)
AU (1) AU2002308010B2 (de)
CA (1) CA2444681C (de)
DE (1) DE60220394T2 (de)
ES (1) ES2287309T3 (de)
GB (1) GB0109782D0 (de)
WO (1) WO2002086973A2 (de)

Families Citing this family (24)

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GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
JP3908503B2 (ja) * 2001-10-30 2007-04-25 富士通株式会社 光スイッチ
US7838875B1 (en) * 2003-01-22 2010-11-23 Tsang Dean Z Metal transistor device
GB0415995D0 (en) 2004-07-16 2004-08-18 Song Aimin Memory array
US7874250B2 (en) * 2005-02-09 2011-01-25 Schlumberger Technology Corporation Nano-based devices for use in a wellbore
EP2264803B1 (de) 2005-05-09 2019-01-30 Pragmatic Printing Ltd Organische gleichrichterschaltung
US20080253167A1 (en) * 2007-04-16 2008-10-16 Ralf Symanczyk Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
CN101431106B (zh) * 2008-12-05 2012-06-06 中山大学 基于负微分迁移率的平面纳米电磁辐射器结构
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
GB2475561A (en) 2009-11-24 2011-05-25 Nano Eprint Ltd Planar electronic devices
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
JP5594780B2 (ja) * 2011-02-28 2014-09-24 日本電信電話株式会社 半導体回路
GB2532895B (en) 2012-02-21 2016-07-13 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
JP5814194B2 (ja) * 2012-07-27 2015-11-17 日本電信電話株式会社 半導体論理回路
EP2731263A1 (de) * 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Vorrichtung und Verfahren zum Mischen elektromagnetischer Wellen mit Frequenzen bis in den THz-Bereich
EP2731264A1 (de) * 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Vorrichtung und Verfahren zur direkten Demodulation von Signalen mit Trägerfrequenzen bis in den THz-Bereich
CN103219944B (zh) 2013-04-23 2015-09-16 华南师范大学 一种基于低维半导体结构的倍频器
CN103489937B (zh) * 2013-10-11 2017-01-25 中国科学院半导体研究所 一种非对称沟道量子点场效应光子探测器
CN104112752B (zh) * 2014-05-16 2017-03-08 华南师范大学 具有相位锁定功能的平面纳米振荡器阵列
FR3030886B1 (fr) 2014-12-22 2017-03-10 Centre Nat Rech Scient Dispositif de modulation comportant une nano-diode
CN108598258B (zh) * 2018-04-27 2021-11-09 华南师范大学 一种具有静态负微分电阻特性的太赫兹器件
JP2020009883A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器

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Also Published As

Publication number Publication date
KR20040012755A (ko) 2004-02-11
WO2002086973A3 (en) 2003-10-16
AU2002308010B2 (en) 2007-08-09
DE60220394D1 (de) 2007-07-12
US20040149679A1 (en) 2004-08-05
EP1380053B1 (de) 2007-05-30
KR100884040B1 (ko) 2009-02-19
CA2444681A1 (en) 2002-10-31
JP4902094B2 (ja) 2012-03-21
CA2444681C (en) 2013-12-17
ES2287309T3 (es) 2007-12-16
CN100377354C (zh) 2008-03-26
EP1380053A2 (de) 2004-01-14
JP2004534388A (ja) 2004-11-11
GB0109782D0 (en) 2001-06-13
US7224026B2 (en) 2007-05-29
WO2002086973A2 (en) 2002-10-31
DE60220394T2 (de) 2008-01-31
CN1669144A (zh) 2005-09-14

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