ES2287309T3 - Dispositivos y circuitos nanoelectricos. - Google Patents

Dispositivos y circuitos nanoelectricos. Download PDF

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Publication number
ES2287309T3
ES2287309T3 ES02764075T ES02764075T ES2287309T3 ES 2287309 T3 ES2287309 T3 ES 2287309T3 ES 02764075 T ES02764075 T ES 02764075T ES 02764075 T ES02764075 T ES 02764075T ES 2287309 T3 ES2287309 T3 ES 2287309T3
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ES
Spain
Prior art keywords
lines
devices
diode
diode devices
nanoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES02764075T
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English (en)
Inventor
Aimin Song
Par Omling
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PLASTIC EPRINT Ltd
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PLASTIC EPRINT Ltd
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Publication of ES2287309T3 publication Critical patent/ES2287309T3/es
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

Componente (130; 160) de circuito electrónico, que comprende un sustrato que soporta portadores de carga móviles, medios (8; 60; 70; 80; 114) de barrera aislantes alargados de división formados en la superficie del sustrato de manera que se definen zonas de sustrato primera (10; 50; 102; 154; 156) y segunda (12; 52; 54; 100; 104; 158) sobre cualquier lado de dichos medios de barrera, comprendiendo dichos medios de barrera una abertura, incluyendo además los medios de barrera barreras (16; 18; 66; 68; 82; 84; 120; 122; 174; 176) aislantes alargadas primera y segunda que se extienden desde los bordes de la abertura en la segunda zona (12; 52; 54; 100; 104; 158) de sustrato y que están situadas próximas entre sí pero separadas por una cantidad predeterminada para proporcionar un canal (20; 62; 64; 86; 88; 116; 118; 182; 184) alargado que se extiende entre las zonas de sustrato primera y segunda con un ancho predeterminado, que proporciona una trayectoria de flujo de portadores de carga en el sustrato desde la primera zona (10; 50; 102; 154; 156) de sustrato hacia la segunda zona (12; 52; 54; 100; 104; 158) de sustrato, y en el que dicho ancho predeterminado de dicho canal alargado es de tal manera que cuando se aplica una diferencia de voltaje entre dichas zonas de sustrato primera (10; 50; 102; 154; 156) y segunda (12; 52; 54; 100; 104; 158) tal como para provocar el flujo de dichos portadores de carga móviles a través de dicho canal (20; 62; 64; 86; 88; 116; 118; 182; 184) alargado, el voltaje existente en la segunda zona de sustrato influye, a través de dichas barreras (16; 18; 66; 68; 82; 84; 120; 122; 174; 176) aislantes primera y segunda, en el tamaño de las regiones de agotamiento existentes dentro de dicho canal alargado, por los que las características de conductividad del canal dependen de dicha diferencia de voltaje.
ES02764075T 2001-04-20 2002-04-18 Dispositivos y circuitos nanoelectricos. Expired - Lifetime ES2287309T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0109782.3A GB0109782D0 (en) 2001-04-20 2001-04-20 Nanoelectronic devices and circuits

Publications (1)

Publication Number Publication Date
ES2287309T3 true ES2287309T3 (es) 2007-12-16

Family

ID=9913182

Family Applications (1)

Application Number Title Priority Date Filing Date
ES02764075T Expired - Lifetime ES2287309T3 (es) 2001-04-20 2002-04-18 Dispositivos y circuitos nanoelectricos.

Country Status (12)

Country Link
US (1) US7224026B2 (es)
EP (1) EP1380053B1 (es)
JP (1) JP4902094B2 (es)
KR (1) KR100884040B1 (es)
CN (1) CN100377354C (es)
AT (1) ATE363733T1 (es)
AU (1) AU2002308010B2 (es)
CA (1) CA2444681C (es)
DE (1) DE60220394T2 (es)
ES (1) ES2287309T3 (es)
GB (1) GB0109782D0 (es)
WO (1) WO2002086973A2 (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
JP3908503B2 (ja) * 2001-10-30 2007-04-25 富士通株式会社 光スイッチ
US7838875B1 (en) 2003-01-22 2010-11-23 Tsang Dean Z Metal transistor device
GB0415995D0 (en) * 2004-07-16 2004-08-18 Song Aimin Memory array
US7874250B2 (en) * 2005-02-09 2011-01-25 Schlumberger Technology Corporation Nano-based devices for use in a wellbore
JP2008544477A (ja) 2005-05-09 2008-12-04 ナノ イープリント リミテッド 電子デバイス
US20080253167A1 (en) * 2007-04-16 2008-10-16 Ralf Symanczyk Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
CN101431106B (zh) * 2008-12-05 2012-06-06 中山大学 基于负微分迁移率的平面纳米电磁辐射器结构
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
GB2475561A (en) 2009-11-24 2011-05-25 Nano Eprint Ltd Planar electronic devices
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
JP5594780B2 (ja) * 2011-02-28 2014-09-24 日本電信電話株式会社 半導体回路
GB2532895B (en) 2012-02-21 2016-07-13 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
JP5814194B2 (ja) * 2012-07-27 2015-11-17 日本電信電話株式会社 半導体論理回路
EP2731263A1 (en) * 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Device and method for mixing electromagnetic waves with frequencies up to the THz range
EP2731264A1 (en) * 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Device and method for direct demodulation of signals with carrier frequencies up to the THz range
CN103219944B (zh) * 2013-04-23 2015-09-16 华南师范大学 一种基于低维半导体结构的倍频器
CN103489937B (zh) * 2013-10-11 2017-01-25 中国科学院半导体研究所 一种非对称沟道量子点场效应光子探测器
CN104112752B (zh) * 2014-05-16 2017-03-08 华南师范大学 具有相位锁定功能的平面纳米振荡器阵列
FR3030886B1 (fr) * 2014-12-22 2017-03-10 Centre Nat Rech Scient Dispositif de modulation comportant une nano-diode
CN108598258B (zh) * 2018-04-27 2021-11-09 华南师范大学 一种具有静态负微分电阻特性的太赫兹器件
JP2020009883A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829356A (en) * 1971-04-16 1974-08-13 Nl Industries Inc Sintered ceramic bodies with porous portions
US3679950A (en) * 1971-04-16 1972-07-25 Nl Industries Inc Ceramic capacitors
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
JPH0411784A (ja) * 1990-04-28 1992-01-16 Fujitsu Ltd 量子ポイントコンタクト装置およびその製造方法
JPH04229656A (ja) * 1990-06-13 1992-08-19 Fujitsu Ltd 量子波屈折デバイス
JPH05315598A (ja) * 1992-05-08 1993-11-26 Fujitsu Ltd 半導体装置
JP3182892B2 (ja) * 1992-07-03 2001-07-03 松下電器産業株式会社 量子素子の製造方法
JPH06140636A (ja) * 1992-10-28 1994-05-20 Sony Corp 量子細線トランジスタとその製法
GB9226847D0 (en) 1992-12-23 1993-02-17 Hitachi Europ Ltd Complementary conductive device
GB9311111D0 (en) * 1993-05-28 1993-07-14 Hitachi Europ Ltd Quantum structure devices
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JP3414992B2 (ja) * 1997-08-13 2003-06-09 日本電信電話株式会社 半導体光素子とその製造方法
JP3776266B2 (ja) * 1998-09-14 2006-05-17 富士通株式会社 赤外線検知器とその製造方法
TW514968B (en) 2000-09-01 2002-12-21 Btg Int Ltd Nanoelectronic devices, circuits including such devices and methods for achieving transistor action and rectifying an alternating voltage in such device
EP1251562A1 (en) 2001-04-20 2002-10-23 Btg International Limited Nanoelectronic devices and circuits
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits

Also Published As

Publication number Publication date
WO2002086973A3 (en) 2003-10-16
ATE363733T1 (de) 2007-06-15
EP1380053A2 (en) 2004-01-14
CA2444681A1 (en) 2002-10-31
AU2002308010B2 (en) 2007-08-09
WO2002086973A2 (en) 2002-10-31
EP1380053B1 (en) 2007-05-30
JP2004534388A (ja) 2004-11-11
CA2444681C (en) 2013-12-17
US20040149679A1 (en) 2004-08-05
CN100377354C (zh) 2008-03-26
DE60220394T2 (de) 2008-01-31
DE60220394D1 (de) 2007-07-12
GB0109782D0 (en) 2001-06-13
JP4902094B2 (ja) 2012-03-21
KR20040012755A (ko) 2004-02-11
KR100884040B1 (ko) 2009-02-19
US7224026B2 (en) 2007-05-29
CN1669144A (zh) 2005-09-14

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