ATE359604T1 - Elektrostatisch gesteuerter tunneleffekt- transistor - Google Patents

Elektrostatisch gesteuerter tunneleffekt- transistor

Info

Publication number
ATE359604T1
ATE359604T1 AT00928255T AT00928255T ATE359604T1 AT E359604 T1 ATE359604 T1 AT E359604T1 AT 00928255 T AT00928255 T AT 00928255T AT 00928255 T AT00928255 T AT 00928255T AT E359604 T1 ATE359604 T1 AT E359604T1
Authority
AT
Austria
Prior art keywords
island
transistor
source
drain
gate
Prior art date
Application number
AT00928255T
Other languages
English (en)
Inventor
Daniel E Grupp
Original Assignee
Acorn Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acorn Tech Inc filed Critical Acorn Tech Inc
Application granted granted Critical
Publication of ATE359604T1 publication Critical patent/ATE359604T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Control Of Eletrric Generators (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT00928255T 1999-04-22 2000-04-21 Elektrostatisch gesteuerter tunneleffekt- transistor ATE359604T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/296,858 US6198113B1 (en) 1999-04-22 1999-04-22 Electrostatically operated tunneling transistor

Publications (1)

Publication Number Publication Date
ATE359604T1 true ATE359604T1 (de) 2007-05-15

Family

ID=23143870

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00928255T ATE359604T1 (de) 1999-04-22 2000-04-21 Elektrostatisch gesteuerter tunneleffekt- transistor

Country Status (10)

Country Link
US (1) US6198113B1 (de)
EP (1) EP1173896B1 (de)
JP (2) JP4109830B2 (de)
KR (1) KR100721632B1 (de)
CN (1) CN1168156C (de)
AT (1) ATE359604T1 (de)
AU (1) AU4651600A (de)
DE (1) DE60034328T2 (de)
TW (1) TW454352B (de)
WO (1) WO2000065669A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818439B1 (fr) * 2000-12-18 2003-09-26 Commissariat Energie Atomique Procede de fabrication d'un ilot de matiere confine entre des electrodes, et applications aux transistors
US6566680B1 (en) * 2001-01-30 2003-05-20 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) tunneling junction transistor
KR100444270B1 (ko) * 2002-07-06 2004-08-12 재단법인서울대학교산학협력재단 음 미분 전도도를 갖는 반도체 소자의 제조 방법
US7902029B2 (en) * 2002-08-12 2011-03-08 Acorn Technologies, Inc. Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
KR100470832B1 (ko) * 2002-08-12 2005-03-10 한국전자통신연구원 두께가 얇은 ｓｏｉ층을 이용한 쇼트키 장벽 관통트랜지스터 및 그 제조방법
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
KR100558287B1 (ko) * 2002-12-10 2006-03-10 한국전자통신연구원 단전자 소자, 그 제조 방법 및 단전자 소자와 ｍｏｓ트랜지스터를 동시에 형성하는 제조방법
US6844566B2 (en) * 2003-05-30 2005-01-18 Texas Instruments Incorporated Suspended gate single-electron device
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor
KR101539669B1 (ko) * 2008-12-16 2015-07-27 삼성전자주식회사 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법
EP2239781A1 (de) * 2009-04-06 2010-10-13 University College Cork-National University of Ireland, Cork Transistor mit variabler Tunnelbarriere
EP2544237B1 (de) 2009-09-16 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Transistor und Anzeigevorrichtung
KR102054650B1 (ko) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US8178400B2 (en) * 2009-09-28 2012-05-15 International Business Machines Corporation Replacement spacer for tunnel FETs
US8258031B2 (en) 2010-06-15 2012-09-04 International Business Machines Corporation Fabrication of a vertical heterojunction tunnel-FET
US8648426B2 (en) * 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
CN102664153B (zh) * 2012-05-08 2016-04-06 肖德元 一种超导场效应晶体管、其制作方法及应用方法
US8889541B1 (en) * 2013-05-07 2014-11-18 International Business Machines Corporation Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
CN111502725B (zh) * 2020-04-20 2021-09-28 中交第三航务工程局有限公司 一种海底掘进隧道的人工岛式中间井结构

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3116427A (en) 1960-07-05 1963-12-31 Gen Electric Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive
JPH0673375B2 (ja) 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
US4751563A (en) 1984-11-05 1988-06-14 International Business Machines, Corp. Microminiaturized electrical interconnection device and its method of fabrication
EP0185104B1 (de) 1984-12-18 1989-04-05 International Business Machines Corporation Tunnel-Transistor für tiefe Temperaturen
US4631352A (en) 1985-12-17 1986-12-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
US5834793A (en) 1985-12-27 1998-11-10 Kabushiki Kaisha Toshiba Semiconductor devices
JPH0666467B2 (ja) * 1985-12-27 1994-08-24 株式会社東芝 半導体装置
US4837604A (en) 1986-04-18 1989-06-06 Hypres, Inc. Femtosecond three-terminal switch and vertical tunnel junction
US5596206A (en) * 1987-03-13 1997-01-21 Semiconductor Energy Laboratory Co., Ltd. Superconducting device
DE69107262D1 (de) 1990-03-20 1995-03-23 Fujitsu Ltd Elektronische anordnung mit stromkanal aus dielektrischem material.
US5019530A (en) 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights
US5401980A (en) 1991-09-04 1995-03-28 International Business Machines Corporation 2D/1D junction device as a Coulomb blockade gate
JP3156307B2 (ja) 1991-10-15 2001-04-16 株式会社日立製作所 一電子トンネルトランジスタ及びその集積回路
DE69202554T2 (de) 1991-12-25 1995-10-19 Nippon Electric Co Tunneltransistor und dessen Herstellungsverfahren.
US5677637A (en) 1992-03-25 1997-10-14 Hitachi, Ltd. Logic device using single electron coulomb blockade techniques
US5475341A (en) 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
JPH0637319A (ja) * 1992-07-13 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Ｓｏｉ型電界効果半導体装置
JPH0697435A (ja) * 1992-09-11 1994-04-08 Hitachi Ltd Ｍｏｓ型半導体装置
JP2586795B2 (ja) * 1993-08-13 1997-03-05 日本電気株式会社 単一電子帯電効果を利用した記憶回路とその製造方法
JP3436779B2 (ja) * 1993-09-22 2003-08-18 株式会社東芝 単一電子トンネリング素子
JP3635683B2 (ja) 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
JPH07211948A (ja) * 1994-01-12 1995-08-11 Fuji Electric Co Ltd 微小トンネル接合超伝導トランジスタ
US5646559A (en) 1994-03-15 1997-07-08 Kabushiki Kaisha Toshiba Single-electron tunnelling logic device
DE4409863C1 (de) 1994-03-22 1995-05-04 Siemens Ag Verfahren zur Herstellung eines Einzelelektronen-Bauelementes
US5604154A (en) 1994-10-27 1997-02-18 Nippon Telegraph And Telephone Corporation Method of manufacturing coulamb blockade element using thermal oxidation
JP3149718B2 (ja) 1995-02-03 2001-03-26 松下電器産業株式会社 単電子トランジスタ
US5754077A (en) 1995-03-16 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET
US5731598A (en) 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same
JP3402905B2 (ja) * 1996-03-04 2003-05-06 株式会社東芝 半導体素子
US5844279A (en) * 1995-09-14 1998-12-01 Kabushiki Kaisha Toshiba Single-electron semiconductor device
KR0170472B1 (ko) 1995-12-21 1999-02-01 정선종 주사관통현미경의 저전압진공증착을 이용한 상온작동 단일전자트랜지스터의 제조방법
US5608321A (en) * 1995-12-28 1997-03-04 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for detecting target species having quadropolar muclei by stochastic nuclear quadrupole resonance
JP3361442B2 (ja) 1996-04-05 2003-01-07 松下電器産業株式会社 量子効果素子の製造方法、半導体装置及び半導体装置の製造方法
US5972744A (en) 1996-04-05 1999-10-26 Matsushita Electric Industrial Co., Ltd. Quantum effect device, method of manufacturing the same
JP3258241B2 (ja) * 1996-09-30 2002-02-18 株式会社東芝 単一電子制御磁気抵抗素子

Also Published As

Publication number Publication date
AU4651600A (en) 2000-11-10
KR20020005710A (ko) 2002-01-17
JP4717855B2 (ja) 2011-07-06
KR100721632B1 (ko) 2007-05-23
EP1173896A1 (de) 2002-01-23
WO2000065669A1 (en) 2000-11-02
DE60034328D1 (de) 2007-05-24
TW454352B (en) 2001-09-11
JP4109830B2 (ja) 2008-07-02
DE60034328T2 (de) 2007-12-20
CN1168156C (zh) 2004-09-22
JP2002543596A (ja) 2002-12-17
CN1347571A (zh) 2002-05-01
EP1173896B1 (de) 2007-04-11
US6198113B1 (en) 2001-03-06
JP2007281489A (ja) 2007-10-25

Similar Documents

Publication Publication Date Title
ATE359604T1 (de) Elektrostatisch gesteuerter tunneleffekt- transistor
Mayer et al. Impact of SOI, Si 1-x Ge x OI and GeOI substrates on CMOS compatible tunnel FET performance
TW335513B (en) Semiconductor component for high voltage
TW200415756A (en) MOSFET having significantly reduced leakage currents and method of fabricating the same
CN109417095B (zh) 隧穿场效应晶体管及其制备方法
Ravindran et al. Gate all around nanowire TFET with high ON/OFF current ratio
EP1284496A4 (de) Übergangsfeldeffekttransistor und seine herstellungsmethode
Abadi et al. Representation of strained gate-all-around junctionless tunneling nanowire filed effect transistor for analog applications
Juyal et al. TCAD simulation of germanium source dopingless tunnel FET
SE9900358D0 (sv) A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
TW200633211A (en) Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer
KR102093141B1 (ko) 자연 헤테로 접합 터널 전계 효과 트랜지스터
Salehi et al. Analysis and optimization of tunnel FET with band gap engineering
MY125101A (en) Electrostatically operated tunneling transistor
US6246093B1 (en) Hybrid surface/buried-channel MOSFET
WO2004049396A3 (en) Vertical gate-depleted single electron transistors
Anand et al. Performance analysis of different material based dual electrode doping-less TFET
Geege et al. A detailed review on double gate and triple gate tunnel field effect transistors
Saini et al. Modelling and comparison of single gate and dual gate organic thin film transistor
Karbalaei et al. Influence of high-k insulator and source stack on the performance of a double gate tunnel FET: a simulation study
Richter et al. Tunnel-FET inverters for ultra-low power logic with supply voltage down to V DD= 0.2 V
JPS5552266A (en) Semiconductor integrated circuit
Takagi et al. III–V-based low power CMOS devices on Si platform
Mori et al. P-channel Super Steep Subthreshold Slope PN-Body Tied SOI FET: Possibility of CMOS
Lim et al. Optically tunable feedback operation of silicon nanowire transistors

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties