ATE359604T1 - Elektrostatisch gesteuerter tunneleffekt- transistor - Google Patents

Elektrostatisch gesteuerter tunneleffekt- transistor

Info

Publication number
ATE359604T1
ATE359604T1 AT00928255T AT00928255T ATE359604T1 AT E359604 T1 ATE359604 T1 AT E359604T1 AT 00928255 T AT00928255 T AT 00928255T AT 00928255 T AT00928255 T AT 00928255T AT E359604 T1 ATE359604 T1 AT E359604T1
Authority
AT
Austria
Prior art keywords
island
transistor
source
drain
gate
Prior art date
Application number
AT00928255T
Other languages
English (en)
Inventor
Daniel E Grupp
Original Assignee
Acorn Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acorn Tech Inc filed Critical Acorn Tech Inc
Application granted granted Critical
Publication of ATE359604T1 publication Critical patent/ATE359604T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Eletrric Generators (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT00928255T 1999-04-22 2000-04-21 Elektrostatisch gesteuerter tunneleffekt- transistor ATE359604T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/296,858 US6198113B1 (en) 1999-04-22 1999-04-22 Electrostatically operated tunneling transistor

Publications (1)

Publication Number Publication Date
ATE359604T1 true ATE359604T1 (de) 2007-05-15

Family

ID=23143870

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00928255T ATE359604T1 (de) 1999-04-22 2000-04-21 Elektrostatisch gesteuerter tunneleffekt- transistor

Country Status (10)

Country Link
US (1) US6198113B1 (de)
EP (1) EP1173896B1 (de)
JP (2) JP4109830B2 (de)
KR (1) KR100721632B1 (de)
CN (1) CN1168156C (de)
AT (1) ATE359604T1 (de)
AU (1) AU4651600A (de)
DE (1) DE60034328T2 (de)
TW (1) TW454352B (de)
WO (1) WO2000065669A1 (de)

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FR2818439B1 (fr) * 2000-12-18 2003-09-26 Commissariat Energie Atomique Procede de fabrication d'un ilot de matiere confine entre des electrodes, et applications aux transistors
US6566680B1 (en) * 2001-01-30 2003-05-20 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) tunneling junction transistor
KR100444270B1 (ko) * 2002-07-06 2004-08-12 재단법인서울대학교산학협력재단 음 미분 전도도를 갖는 반도체 소자의 제조 방법
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7902029B2 (en) * 2002-08-12 2011-03-08 Acorn Technologies, Inc. Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
KR100470832B1 (ko) * 2002-08-12 2005-03-10 한국전자통신연구원 두께가 얇은 ｓｏｉ층을 이용한 쇼트키 장벽 관통트랜지스터 및 그 제조방법
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
KR100558287B1 (ko) * 2002-12-10 2006-03-10 한국전자통신연구원 단전자 소자, 그 제조 방법 및 단전자 소자와 ｍｏｓ트랜지스터를 동시에 형성하는 제조방법
US6844566B2 (en) * 2003-05-30 2005-01-18 Texas Instruments Incorporated Suspended gate single-electron device
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor
KR101539669B1 (ko) * 2008-12-16 2015-07-27 삼성전자주식회사 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법
EP2239781A1 (de) 2009-04-06 2010-10-13 University College Cork-National University of Ireland, Cork Transistor mit variabler Tunnelbarriere
KR20190045396A (ko) * 2009-09-16 2019-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR102054650B1 (ko) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US8178400B2 (en) * 2009-09-28 2012-05-15 International Business Machines Corporation Replacement spacer for tunnel FETs
US8258031B2 (en) 2010-06-15 2012-09-04 International Business Machines Corporation Fabrication of a vertical heterojunction tunnel-FET
US8648426B2 (en) * 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
CN102664153B (zh) * 2012-05-08 2016-04-06 肖德元 一种超导场效应晶体管、其制作方法及应用方法
US8889541B1 (en) * 2013-05-07 2014-11-18 International Business Machines Corporation Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
US10170627B2 (en) 2016-11-18 2019-01-01 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
CN111502725B (zh) * 2020-04-20 2021-09-28 中交第三航务工程局有限公司 一种海底掘进隧道的人工岛式中间井结构

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Also Published As

Publication number Publication date
CN1168156C (zh) 2004-09-22
JP2002543596A (ja) 2002-12-17
TW454352B (en) 2001-09-11
EP1173896B1 (de) 2007-04-11
CN1347571A (zh) 2002-05-01
US6198113B1 (en) 2001-03-06
JP4717855B2 (ja) 2011-07-06
JP2007281489A (ja) 2007-10-25
DE60034328D1 (de) 2007-05-24
EP1173896A1 (de) 2002-01-23
KR100721632B1 (ko) 2007-05-23
WO2000065669A1 (en) 2000-11-02
JP4109830B2 (ja) 2008-07-02
AU4651600A (en) 2000-11-10
KR20020005710A (ko) 2002-01-17
DE60034328T2 (de) 2007-12-20

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