ATE329997T1 - Reinigerzusammensetzung - Google Patents

Reinigerzusammensetzung

Info

Publication number
ATE329997T1
ATE329997T1 AT02723854T AT02723854T ATE329997T1 AT E329997 T1 ATE329997 T1 AT E329997T1 AT 02723854 T AT02723854 T AT 02723854T AT 02723854 T AT02723854 T AT 02723854T AT E329997 T1 ATE329997 T1 AT E329997T1
Authority
AT
Austria
Prior art keywords
organic
combination
cleaner composition
corrosion
alkanolamine
Prior art date
Application number
AT02723854T
Other languages
English (en)
Inventor
Shahriar Naghshineh
Yassaman Hashemi
Original Assignee
Esc Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Esc Inc filed Critical Esc Inc
Application granted granted Critical
Publication of ATE329997T1 publication Critical patent/ATE329997T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K8/00Cosmetics or similar toiletry preparations
    • A61K8/18Cosmetics or similar toiletry preparations characterised by the composition
    • A61K8/30Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds
    • A61K8/67Vitamins
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61QSPECIFIC USE OF COSMETICS OR SIMILAR TOILETRY PREPARATIONS
    • A61Q19/00Preparations for care of the skin
    • A61Q19/10Washing or bathing preparations
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005Other compounding ingredients characterised by their effect
    • C11D3/0073Anticorrosion compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/042Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/046Salts
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2086Hydroxy carboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/24Organic compounds containing halogen
    • C11D3/245Organic compounds containing halogen containing fluorine
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20Other heavy metals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40Specific cleaning or washing processes
    • C11D2111/46Specific cleaning or washing processes applying energy, e.g. irradiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • H10P70/27Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Animal Behavior & Ethology (AREA)
  • Materials Engineering (AREA)
  • Emergency Medicine (AREA)
  • Metallurgy (AREA)
  • Veterinary Medicine (AREA)
  • Public Health (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Birds (AREA)
  • Dermatology (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT02723854T 2001-04-19 2002-04-12 Reinigerzusammensetzung ATE329997T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/839,475 US6627587B2 (en) 2001-04-19 2001-04-19 Cleaning compositions

Publications (1)

Publication Number Publication Date
ATE329997T1 true ATE329997T1 (de) 2006-07-15

Family

ID=25279816

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02723854T ATE329997T1 (de) 2001-04-19 2002-04-12 Reinigerzusammensetzung

Country Status (8)

Country Link
US (2) US6627587B2 (de)
EP (1) EP1381663B1 (de)
JP (1) JP2005507436A (de)
KR (1) KR20040022422A (de)
CN (1) CN1503838A (de)
AT (1) ATE329997T1 (de)
DE (1) DE60212366T2 (de)
WO (1) WO2002086045A1 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
JP4252758B2 (ja) * 2002-03-22 2009-04-08 関東化学株式会社 フォトレジスト残渣除去液組成物
KR20050017142A (ko) * 2003-08-08 2005-02-22 삼성전자주식회사 린스 용액 및 이를 이용한 반도체 소자 세정 방법
KR100651366B1 (ko) * 2003-09-05 2006-11-28 삼성전기주식회사 세정력과 폴리이미드면 접착력을 지닌 브라운 옥사이드전처리제 조성물 및 브라운 옥사이드 공정을 통한폴리이미드면 접착력 향상 방법
CN1934233B (zh) * 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
US7276402B2 (en) 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN1918698B (zh) * 2004-02-09 2010-04-07 三菱化学株式会社 半导体装置用基板的洗涤液及洗涤方法
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
DE602005000732T2 (de) * 2004-06-25 2007-12-06 Jsr Corp. Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
WO2006081406A1 (en) * 2005-01-27 2006-08-03 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923424B2 (en) 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
WO2006088737A2 (en) * 2005-02-14 2006-08-24 Small Robert J Semiconductor cleaning
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
SG10201504423QA (en) 2005-06-07 2015-07-30 Entegris Inc Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
US20090212021A1 (en) * 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
WO2007047365A2 (en) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
EP1946358A4 (de) 2005-11-09 2009-03-04 Advanced Tech Materials Zusammensetzung und verfahren zum recycling von halbleiterwafern mit materialien mit niedriger dielektrizitätskonstante
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
CN101473073B (zh) * 2006-04-26 2012-08-08 高级技术材料公司 半导体加工系统的清洁
WO2008008362A2 (en) * 2006-07-11 2008-01-17 Byocoat Enterprises, Inc. Compositions and methods for reducing or preventing microorganism growth or survival in aqueous environments
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR101644763B1 (ko) * 2007-05-17 2016-08-01 엔테그리스, 아이엔씨. Cmp후 세정 제제용 신규한 항산화제
US8968583B2 (en) * 2007-07-25 2015-03-03 International Business Machines Corporation Cleaning process for microelectronic dielectric and metal structures
US8226775B2 (en) * 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
SG188150A1 (en) 2008-02-11 2013-03-28 Advanced Tech Materials Ion source cleaning in semiconductor processing systems
JP5347291B2 (ja) * 2008-03-21 2013-11-20 信越化学工業株式会社 シリコーンレンズ成型用金型の洗浄方法
JP2008205490A (ja) * 2008-03-24 2008-09-04 Nec Corp デバイス基板用の洗浄組成物及び該洗浄組成物を用いた洗浄方法並びに洗浄装置
US20100018550A1 (en) * 2008-07-25 2010-01-28 Surface Chemistry Discoveries, Inc. Cleaning compositions with very low dielectric etch rates
WO2010042457A1 (en) * 2008-10-09 2010-04-15 Mallinckrodt Baker, Inc. Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅の洗浄及び保護配合物
US8366954B2 (en) 2009-01-13 2013-02-05 Avantor Performance Materials, Bv Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
WO2011094568A2 (en) 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
SG183510A1 (en) * 2010-03-05 2012-09-27 Lam Res Corp Cleaning solution for sidewall polymer of damascene processes
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅または銅合金用エッチング液
CN104508072A (zh) 2012-02-15 2015-04-08 安格斯公司 用于cmp后去除的组合物及使用方法
SG10201610541UA (en) 2012-05-18 2017-01-27 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
WO2014092756A1 (en) * 2012-12-13 2014-06-19 Parker-Hannifin Corporation Cleaning composition for metal articles
TWI655273B (zh) 2013-03-04 2019-04-01 美商恩特葛瑞斯股份有限公司 選擇性蝕刻氮化鈦之組成物及方法
US20160122696A1 (en) * 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
CN103441129A (zh) * 2013-08-23 2013-12-11 京东方科技集团股份有限公司 阵列基板及其制作方法和显示装置
US9735177B2 (en) 2013-08-23 2017-08-15 Boe Technology Group Co., Ltd. Array substrate, method for manufacturing the same and display device
CN105492576B (zh) 2013-08-30 2019-01-04 恩特格里斯公司 选择性蚀刻氮化钛的组合物和方法
EP3719105B1 (de) 2013-12-06 2023-09-27 Fujifilm Electronic Materials USA, Inc. Reinigungsformulierung zur entfernung von rückständen auf oberflächen
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
SG10201805234YA (en) 2013-12-20 2018-08-30 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
CN104031771A (zh) * 2014-06-17 2014-09-10 滁州斯迈特复合材料有限公司 胃镜清洁剂
TWI649454B (zh) * 2017-11-10 2019-02-01 關東鑫林科技股份有限公司 蝕刻液組成物及使用該蝕刻液組成物之蝕刻方法
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
JP6924690B2 (ja) * 2017-12-21 2021-08-25 花王株式会社 樹脂マスク剥離洗浄方法
US10752867B2 (en) 2018-03-28 2020-08-25 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
WO2022025161A1 (ja) * 2020-07-31 2022-02-03 株式会社トクヤマ シリコンエッチング液、並びに該エッチング液を用いたシリコンデバイスの製造方法およびシリコン基板の処理方法
CN114318353B (zh) * 2021-12-27 2023-12-05 广东红日星实业有限公司 一种除灰剂及其制备方法和应用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617251A (en) 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
US5143648A (en) 1989-07-20 1992-09-01 Nippon Hypox Laboratories Incorporated Ascorbic acid derivative and use as antioxidant
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6326130B1 (en) 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5597420A (en) 1995-01-17 1997-01-28 Ashland Inc. Stripping composition having monoethanolamine
WO1997018582A1 (en) 1995-11-15 1997-05-22 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
JP2001508239A (ja) 1997-01-09 2001-06-19 アドバンスド ケミカル システムズ インターナショナル,インコーポレイテッド 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法
US5997658A (en) 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
US6453914B2 (en) * 1999-06-29 2002-09-24 Micron Technology, Inc. Acid blend for removing etch residue
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
US6645930B1 (en) * 2000-07-10 2003-11-11 Ekc Technology, Inc. Clean room wipes for neutralizing caustic chemicals
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions

Also Published As

Publication number Publication date
JP2005507436A (ja) 2005-03-17
US6627587B2 (en) 2003-09-30
US20030207777A1 (en) 2003-11-06
US6851432B2 (en) 2005-02-08
EP1381663B1 (de) 2006-06-14
EP1381663A1 (de) 2004-01-21
KR20040022422A (ko) 2004-03-12
US20030017962A1 (en) 2003-01-23
WO2002086045A1 (en) 2002-10-31
DE60212366T2 (de) 2006-10-12
CN1503838A (zh) 2004-06-09
DE60212366D1 (de) 2006-07-27

Similar Documents

Publication Publication Date Title
DE60212366D1 (de) Reinigerzusammensetzung
SG129274A1 (en) Cleaaning solution and cleaning process using the solution
ATE533571T1 (de) Verbesserte wässrige zusammensetzungen zum abbeizen und reinigen
DE69837011D1 (de) Wässerige abstreif- und reinigungszusammenstellungen
AU4980300A (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
ATE517974T1 (de) Wässrige stripp- und reinigungszusammensetzung
ES2723751T3 (es) Método de limpieza con composiciones de limpieza que contienen un compuesto de magnesio soluble en agua
MX2010006373A (es) Composiciones alcalinas de limpieza.
DE69529832D1 (de) Wässeriges metallreinigungsmittel
PH12014500719B1 (en) Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
CN107130253A (zh) 一种铝合金清洗剂
MY165756A (en) SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-k DIELECTRICS
IL156551A0 (en) Composition comprising an oxidizing and complexing compound
RU2015153430A (ru) Композиции конверсионного покрытия на основе перманганата
SG131867A1 (en) Aqueous cleaning composition and method for using same
ES2738698T3 (es) Uso de ácido alcanosulfónico para la limpieza en las industrias azucareras
JP6557575B2 (ja) エッチング液組成物及びエッチング方法
CN102534641A (zh) 一种有机酸清洗剂及其制造方法
SG146575A1 (en) Semiconductor etch residue remover and cleansing compositions
JP5700784B2 (ja) エッチング液組成物
CN101358353A (zh) 一种氨基酸类复合酸洗缓蚀剂及其应用方法
WO2011031092A3 (ko) 평판표시장치 제조용 기판의 세정액 조성물
CN106435616B (zh) 一种TiNC膜的退镀液及退镀工艺
ES2708173T3 (es) Formulaciones de inhibidor de pérdida de metal y procesos
CN106007013A (zh) 一种有机水质稳定剂

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties