ATE327998T1 - Abscheidung von kupfer mit kupferformatkomplexen - Google Patents
Abscheidung von kupfer mit kupferformatkomplexenInfo
- Publication number
- ATE327998T1 ATE327998T1 AT02805576T AT02805576T ATE327998T1 AT E327998 T1 ATE327998 T1 AT E327998T1 AT 02805576 T AT02805576 T AT 02805576T AT 02805576 T AT02805576 T AT 02805576T AT E327998 T1 ATE327998 T1 AT E327998T1
- Authority
- AT
- Austria
- Prior art keywords
- copper
- complexes
- deposition
- format
- novel
- Prior art date
Links
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical class [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 150000001879 copper Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
- C07C31/28—Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C29/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring
- C07C29/15—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively
- C07C29/151—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
- C07C29/153—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the catalyst used
- C07C29/154—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the catalyst used containing copper, silver, gold, or compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Pyridine Compounds (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34063101P | 2001-12-12 | 2001-12-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE327998T1 true ATE327998T1 (de) | 2006-06-15 |
Family
ID=23334264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02805576T ATE327998T1 (de) | 2001-12-12 | 2002-12-12 | Abscheidung von kupfer mit kupferformatkomplexen |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6770122B2 (de) |
| EP (1) | EP1461345B1 (de) |
| JP (1) | JP2005513117A (de) |
| KR (1) | KR20040071193A (de) |
| CN (1) | CN1602314A (de) |
| AT (1) | ATE327998T1 (de) |
| AU (1) | AU2002357160A1 (de) |
| DE (1) | DE60211949D1 (de) |
| IL (1) | IL162005A0 (de) |
| TW (1) | TW200409829A (de) |
| WO (1) | WO2003053895A2 (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1662020B1 (de) * | 2003-07-03 | 2008-05-14 | Mec Company Ltd. | Verfahren zur Herstellung einer dünnen Kupferschicht |
| US7018917B2 (en) | 2003-11-20 | 2006-03-28 | Asm International N.V. | Multilayer metallization |
| DE10360046A1 (de) * | 2003-12-18 | 2005-07-21 | Basf Ag | Kupfer(l)formiatkomplexe |
| US20050274933A1 (en) * | 2004-06-15 | 2005-12-15 | Peng Chen | Formulation for printing organometallic compounds to form conductive traces |
| EP1629902A1 (de) * | 2004-08-30 | 2006-03-01 | E.I. Dupont De Nemours And Company | Verfahren zur Auftragung von Kupfer aus einer überkritischen Lösung, die Kupfer-(1)-Komplexe mit einem neutralen Liganten enthält |
| JP5145052B2 (ja) * | 2008-01-07 | 2013-02-13 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびに記憶媒体 |
| US8309179B2 (en) * | 2009-09-28 | 2012-11-13 | Rohm And Haas Electronics Materials Llc | Selenium/group 1b ink and methods of making and using same |
| KR20110064153A (ko) | 2009-12-07 | 2011-06-15 | 삼성전자주식회사 | 금속 유기 전구체, 이의 제조방법, 및 이를 이용한 전도성 금속막 또는 패턴 형성방법 |
| EP2871260B1 (de) * | 2012-07-09 | 2019-03-06 | Shikoku Chemicals Corporation | Kupferfolienbildner und verfahren zur herstellung einer kupferfolie |
| US9012278B2 (en) | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
| JP6100178B2 (ja) * | 2014-01-06 | 2017-03-22 | 四国化成工業株式会社 | 銅被膜形成剤および銅被膜の形成方法 |
| EP3689984B8 (de) | 2014-06-19 | 2023-07-12 | National Research Council of Canada | Molekulare tinten |
| JP6387282B2 (ja) * | 2014-10-10 | 2018-09-05 | 株式会社Adeka | 銅膜形成用組成物及びそれを用いた銅膜の製造方法 |
| CN107614481B (zh) * | 2015-06-11 | 2021-05-07 | 加拿大国家研究委员会 | 高导电性铜膜的制备 |
| EP3391285B1 (de) * | 2015-12-18 | 2020-10-21 | Abbott Laboratories | Verfahren und systeme zur beurteilung histologischer färbungen |
| WO2018146619A2 (en) | 2017-02-08 | 2018-08-16 | National Research Council Of Canada | Silver molecular ink with low viscosity and low processing temperature |
| TW201842087A (zh) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | 具改良之熱穩定性的分子油墨 |
| TW201842088A (zh) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | 可印刷分子油墨 |
| JP7471341B2 (ja) | 2021-04-21 | 2024-04-19 | エルジー イノテック カンパニー リミテッド | 回路基板、イメージセンサーモジュール、レンズ駆動装置、およびこれを含むカメラモジュール |
| CN114106019A (zh) * | 2021-12-06 | 2022-03-01 | 桂林理工大学 | 吡唑-3-甲酸铜配合物的晶体结构及其磁性质 |
| CN115869949A (zh) * | 2022-12-22 | 2023-03-31 | 中国科学院过程工程研究所 | 一种负载型单原子铜基催化剂及其制备方法和应用 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3771973A (en) * | 1971-05-10 | 1973-11-13 | Hooker Chemical Corp | Metal plating of synthetic polymers |
| US3980654A (en) * | 1973-10-26 | 1976-09-14 | Eastman Kodak Company | Copper (II) complexes |
| US4582731A (en) * | 1983-09-01 | 1986-04-15 | Battelle Memorial Institute | Supercritical fluid molecular spray film deposition and powder formation |
| JPS60195077A (ja) * | 1984-03-16 | 1985-10-03 | 奥野製薬工業株式会社 | セラミツクスの無電解めつき用触媒組成物 |
| US4761467A (en) * | 1985-10-21 | 1988-08-02 | Texaco Inc. | Pyridine ligands for preparation of organic carbonates |
| US4818255A (en) * | 1987-02-10 | 1989-04-04 | Kozo Director-general of Agency of Industrial Science and Technology Iizuka | Material for gas separation |
| US5767303A (en) * | 1996-10-04 | 1998-06-16 | Chiyoda Corporation | Process of producing carbonic diester |
| US5789027A (en) * | 1996-11-12 | 1998-08-04 | University Of Massachusetts | Method of chemically depositing material onto a substrate |
| US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
-
2002
- 2002-12-12 AT AT02805576T patent/ATE327998T1/de not_active IP Right Cessation
- 2002-12-12 JP JP2003554612A patent/JP2005513117A/ja not_active Withdrawn
- 2002-12-12 DE DE60211949T patent/DE60211949D1/de not_active Expired - Lifetime
- 2002-12-12 WO PCT/US2002/039637 patent/WO2003053895A2/en active IP Right Grant
- 2002-12-12 EP EP02805576A patent/EP1461345B1/de not_active Expired - Lifetime
- 2002-12-12 CN CNA028246489A patent/CN1602314A/zh active Pending
- 2002-12-12 KR KR10-2004-7009038A patent/KR20040071193A/ko not_active Application Discontinuation
- 2002-12-12 US US10/317,979 patent/US6770122B2/en not_active Expired - Fee Related
- 2002-12-12 AU AU2002357160A patent/AU2002357160A1/en not_active Abandoned
- 2002-12-12 IL IL16200502A patent/IL162005A0/xx unknown
- 2002-12-13 TW TW091136121A patent/TW200409829A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002357160A8 (en) | 2003-07-09 |
| EP1461345B1 (de) | 2006-05-31 |
| DE60211949D1 (de) | 2006-07-06 |
| WO2003053895A2 (en) | 2003-07-03 |
| AU2002357160A1 (en) | 2003-07-09 |
| US20030165623A1 (en) | 2003-09-04 |
| KR20040071193A (ko) | 2004-08-11 |
| CN1602314A (zh) | 2005-03-30 |
| WO2003053895A3 (en) | 2004-01-15 |
| US6770122B2 (en) | 2004-08-03 |
| TW200409829A (en) | 2004-06-16 |
| JP2005513117A (ja) | 2005-05-12 |
| IL162005A0 (en) | 2005-11-20 |
| EP1461345A2 (de) | 2004-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60211949D1 (de) | Abscheidung von kupfer mit kupferformatkomplexen | |
| MY143357A (en) | A carrier substrate for electronic components | |
| WO2003095701A8 (en) | Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition | |
| WO2002068601A3 (en) | Small peptides capable of modulating the function of cd66 (ceacam) family members | |
| MXPA03006682A (es) | Substrato transparente provisto con un electrodo. | |
| MXPA03006055A (es) | Nuevos compuestos de n-fenilpirrolbisfosfano y sus complejos de metal. | |
| HK1046424A1 (zh) | 化學機械拋光系統及其使用方法 | |
| MX9805499A (es) | Compuestos de azacicloheptano y diazacicloheptano y ciclooctano sustituidos y su uso. | |
| DE69901840T2 (de) | Neue salzform von pantoprazol | |
| WO2003048301A3 (en) | Anti-hla-dr antibodies and the methods of using thereof | |
| AU2003224129A1 (en) | Substrates having a biofilm-inhibiting coating | |
| BRPI0518899A2 (pt) | precursor de compàsito de papel tÉrmico | |
| AU3801997A (en) | Assays for protein kinases using fluorescent protein substrates | |
| TW200617198A (en) | Copper(Ⅱ) complexes for deposition of copper films by atomic layer deposition | |
| TW200500327A (en) | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition | |
| AU2003290592A1 (en) | Antitumor benzoylsulfonamides | |
| DE50210381D1 (de) | Eisenoxide mit höherem veredelungsgrad | |
| ATE341799T1 (de) | Datenträger mit transponderspule | |
| DE59803513D1 (de) | Presshilfsmittel zur herstellung von sinterbaren formteilen aus metallpulver | |
| EP1377165A4 (de) | Tsg101-gag-wechselwirkung und ihre verwendung | |
| ATE334949T1 (de) | Dickfilm-leiterzusammensetzungen zur verwendung auf alumniumnitridsubstraten | |
| DE69933690D1 (de) | Apoptosis induzierender faktor | |
| FR2824752B1 (fr) | Composition utilisable pour le conditionnement de boues | |
| WO2000029420A3 (en) | Methods of making modified nucleosides | |
| DE50207869D1 (de) | Metallorganisches antitumormittel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |