IL162005A0 - Copper deposition using copper formate complexes - Google Patents
Copper deposition using copper formate complexesInfo
- Publication number
- IL162005A0 IL162005A0 IL16200502A IL16200502A IL162005A0 IL 162005 A0 IL162005 A0 IL 162005A0 IL 16200502 A IL16200502 A IL 16200502A IL 16200502 A IL16200502 A IL 16200502A IL 162005 A0 IL162005 A0 IL 162005A0
- Authority
- IL
- Israel
- Prior art keywords
- copper
- deposition
- complexes
- formate complexes
- formate
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052802 copper Inorganic materials 0.000 title abstract 2
- 239000010949 copper Substances 0.000 title abstract 2
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical class [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 title abstract 2
- 150000001879 copper Chemical class 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
- C07C31/28—Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C29/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring
- C07C29/15—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively
- C07C29/151—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
- C07C29/153—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the catalyst used
- C07C29/154—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the catalyst used containing copper, silver, gold, or compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Pyridine Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34063101P | 2001-12-12 | 2001-12-12 | |
| PCT/US2002/039637 WO2003053895A2 (en) | 2001-12-12 | 2002-12-12 | Copper deposition using copper formate complexes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL162005A0 true IL162005A0 (en) | 2005-11-20 |
Family
ID=23334264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL16200502A IL162005A0 (en) | 2001-12-12 | 2002-12-12 | Copper deposition using copper formate complexes |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6770122B2 (xx) |
| EP (1) | EP1461345B1 (xx) |
| JP (1) | JP2005513117A (xx) |
| KR (1) | KR20040071193A (xx) |
| CN (1) | CN1602314A (xx) |
| AT (1) | ATE327998T1 (xx) |
| AU (1) | AU2002357160A1 (xx) |
| DE (1) | DE60211949D1 (xx) |
| IL (1) | IL162005A0 (xx) |
| TW (1) | TW200409829A (xx) |
| WO (1) | WO2003053895A2 (xx) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1662020B1 (en) * | 2003-07-03 | 2008-05-14 | Mec Company Ltd. | Method for producing a copper thin film |
| US7018917B2 (en) | 2003-11-20 | 2006-03-28 | Asm International N.V. | Multilayer metallization |
| DE10360046A1 (de) * | 2003-12-18 | 2005-07-21 | Basf Ag | Kupfer(l)formiatkomplexe |
| US20050274933A1 (en) * | 2004-06-15 | 2005-12-15 | Peng Chen | Formulation for printing organometallic compounds to form conductive traces |
| EP1629902A1 (en) * | 2004-08-30 | 2006-03-01 | E.I. Dupont De Nemours And Company | Method of copper deposition from a supercritical fluid solution containing copper (1) complexes with a neutral ligand |
| JP5145052B2 (ja) * | 2008-01-07 | 2013-02-13 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびに記憶媒体 |
| US8309179B2 (en) * | 2009-09-28 | 2012-11-13 | Rohm And Haas Electronics Materials Llc | Selenium/group 1b ink and methods of making and using same |
| KR20110064153A (ko) | 2009-12-07 | 2011-06-15 | 삼성전자주식회사 | 금속 유기 전구체, 이의 제조방법, 및 이를 이용한 전도성 금속막 또는 패턴 형성방법 |
| US10405422B2 (en) | 2012-07-09 | 2019-09-03 | Shikoku Chemicals Corporation | Copper film-forming agent and method for forming copper film |
| US9012278B2 (en) | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
| JP6100178B2 (ja) * | 2014-01-06 | 2017-03-22 | 四国化成工業株式会社 | 銅被膜形成剤および銅被膜の形成方法 |
| KR102387043B1 (ko) | 2014-06-19 | 2022-04-14 | 내셔날 리서치 카운실 오브 캐나다 | 분자 잉크 |
| JP6387282B2 (ja) * | 2014-10-10 | 2018-09-05 | 株式会社Adeka | 銅膜形成用組成物及びそれを用いた銅膜の製造方法 |
| CA2988797C (en) * | 2015-06-11 | 2023-08-01 | National Research Council Of Canada | Preparation of high conductivity copper films |
| CN109121437A (zh) * | 2015-12-18 | 2019-01-01 | 雅培实验室 | 用于评估组织学染色的方法和系统 |
| TW201842087A (zh) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | 具改良之熱穩定性的分子油墨 |
| TW201842088A (zh) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | 可印刷分子油墨 |
| WO2018146619A2 (en) | 2017-02-08 | 2018-08-16 | National Research Council Of Canada | Silver molecular ink with low viscosity and low processing temperature |
| EP4084586A1 (en) | 2021-04-21 | 2022-11-02 | LG Innotek Co., Ltd. | A circuit board, an image sensor module, a lens driving device, and a camera module including the same |
| CN114106019A (zh) * | 2021-12-06 | 2022-03-01 | 桂林理工大学 | 吡唑-3-甲酸铜配合物的晶体结构及其磁性质 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3771973A (en) * | 1971-05-10 | 1973-11-13 | Hooker Chemical Corp | Metal plating of synthetic polymers |
| US3980654A (en) * | 1973-10-26 | 1976-09-14 | Eastman Kodak Company | Copper (II) complexes |
| US4582731A (en) | 1983-09-01 | 1986-04-15 | Battelle Memorial Institute | Supercritical fluid molecular spray film deposition and powder formation |
| JPS60195077A (ja) * | 1984-03-16 | 1985-10-03 | 奥野製薬工業株式会社 | セラミツクスの無電解めつき用触媒組成物 |
| US4761467A (en) * | 1985-10-21 | 1988-08-02 | Texaco Inc. | Pyridine ligands for preparation of organic carbonates |
| US4818255A (en) * | 1987-02-10 | 1989-04-04 | Kozo Director-general of Agency of Industrial Science and Technology Iizuka | Material for gas separation |
| US5767303A (en) * | 1996-10-04 | 1998-06-16 | Chiyoda Corporation | Process of producing carbonic diester |
| US5789027A (en) | 1996-11-12 | 1998-08-04 | University Of Massachusetts | Method of chemically depositing material onto a substrate |
| US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
-
2002
- 2002-12-12 EP EP02805576A patent/EP1461345B1/en not_active Expired - Lifetime
- 2002-12-12 IL IL16200502A patent/IL162005A0/xx unknown
- 2002-12-12 CN CNA028246489A patent/CN1602314A/zh active Pending
- 2002-12-12 DE DE60211949T patent/DE60211949D1/de not_active Expired - Lifetime
- 2002-12-12 AT AT02805576T patent/ATE327998T1/de not_active IP Right Cessation
- 2002-12-12 US US10/317,979 patent/US6770122B2/en not_active Expired - Fee Related
- 2002-12-12 WO PCT/US2002/039637 patent/WO2003053895A2/en active IP Right Grant
- 2002-12-12 AU AU2002357160A patent/AU2002357160A1/en not_active Abandoned
- 2002-12-12 KR KR10-2004-7009038A patent/KR20040071193A/ko not_active Application Discontinuation
- 2002-12-12 JP JP2003554612A patent/JP2005513117A/ja not_active Withdrawn
- 2002-12-13 TW TW091136121A patent/TW200409829A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040071193A (ko) | 2004-08-11 |
| DE60211949D1 (de) | 2006-07-06 |
| WO2003053895A3 (en) | 2004-01-15 |
| EP1461345A2 (en) | 2004-09-29 |
| CN1602314A (zh) | 2005-03-30 |
| US6770122B2 (en) | 2004-08-03 |
| US20030165623A1 (en) | 2003-09-04 |
| TW200409829A (en) | 2004-06-16 |
| JP2005513117A (ja) | 2005-05-12 |
| EP1461345B1 (en) | 2006-05-31 |
| AU2002357160A8 (en) | 2003-07-09 |
| ATE327998T1 (de) | 2006-06-15 |
| AU2002357160A1 (en) | 2003-07-09 |
| WO2003053895A2 (en) | 2003-07-03 |
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