DE60211949D1 - Abscheidung von kupfer mit kupferformatkomplexen - Google Patents

Abscheidung von kupfer mit kupferformatkomplexen

Info

Publication number
DE60211949D1
DE60211949D1 DE60211949T DE60211949T DE60211949D1 DE 60211949 D1 DE60211949 D1 DE 60211949D1 DE 60211949 T DE60211949 T DE 60211949T DE 60211949 T DE60211949 T DE 60211949T DE 60211949 D1 DE60211949 D1 DE 60211949D1
Authority
DE
Germany
Prior art keywords
copper
complexes
deposition
format
novel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60211949T
Other languages
English (en)
Inventor
Scott Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE60211949D1 publication Critical patent/DE60211949D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/28—Metal alcoholates
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C29/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring
    • C07C29/15—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively
    • C07C29/151—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
    • C07C29/153—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the catalyst used
    • C07C29/154—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the catalyst used containing copper, silver, gold, or compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Pyridine Compounds (AREA)
DE60211949T 2001-12-12 2002-12-12 Abscheidung von kupfer mit kupferformatkomplexen Expired - Lifetime DE60211949D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34063101P 2001-12-12 2001-12-12
PCT/US2002/039637 WO2003053895A2 (en) 2001-12-12 2002-12-12 Copper deposition using copper formate complexes

Publications (1)

Publication Number Publication Date
DE60211949D1 true DE60211949D1 (de) 2006-07-06

Family

ID=23334264

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60211949T Expired - Lifetime DE60211949D1 (de) 2001-12-12 2002-12-12 Abscheidung von kupfer mit kupferformatkomplexen

Country Status (11)

Country Link
US (1) US6770122B2 (de)
EP (1) EP1461345B1 (de)
JP (1) JP2005513117A (de)
KR (1) KR20040071193A (de)
CN (1) CN1602314A (de)
AT (1) ATE327998T1 (de)
AU (1) AU2002357160A1 (de)
DE (1) DE60211949D1 (de)
IL (1) IL162005A0 (de)
TW (1) TW200409829A (de)
WO (1) WO2003053895A2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662020B1 (de) * 2003-07-03 2008-05-14 Mec Company Ltd. Verfahren zur Herstellung einer dünnen Kupferschicht
US7018917B2 (en) 2003-11-20 2006-03-28 Asm International N.V. Multilayer metallization
DE10360046A1 (de) * 2003-12-18 2005-07-21 Basf Ag Kupfer(l)formiatkomplexe
US20050274933A1 (en) * 2004-06-15 2005-12-15 Peng Chen Formulation for printing organometallic compounds to form conductive traces
EP1629902A1 (de) * 2004-08-30 2006-03-01 E.I. Dupont De Nemours And Company Verfahren zur Auftragung von Kupfer aus einer überkritischen Lösung, die Kupfer-(1)-Komplexe mit einem neutralen Liganten enthält
JP5145052B2 (ja) * 2008-01-07 2013-02-13 東京エレクトロン株式会社 成膜方法および成膜装置、ならびに記憶媒体
US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same
KR20110064153A (ko) 2009-12-07 2011-06-15 삼성전자주식회사 금속 유기 전구체, 이의 제조방법, 및 이를 이용한 전도성 금속막 또는 패턴 형성방법
US10405422B2 (en) 2012-07-09 2019-09-03 Shikoku Chemicals Corporation Copper film-forming agent and method for forming copper film
US9012278B2 (en) 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device
JP6100178B2 (ja) * 2014-01-06 2017-03-22 四国化成工業株式会社 銅被膜形成剤および銅被膜の形成方法
KR102387043B1 (ko) 2014-06-19 2022-04-14 내셔날 리서치 카운실 오브 캐나다 분자 잉크
JP6387282B2 (ja) * 2014-10-10 2018-09-05 株式会社Adeka 銅膜形成用組成物及びそれを用いた銅膜の製造方法
CA2988797C (en) * 2015-06-11 2023-08-01 National Research Council Of Canada Preparation of high conductivity copper films
CN109121437A (zh) * 2015-12-18 2019-01-01 雅培实验室 用于评估组织学染色的方法和系统
TW201842087A (zh) 2017-02-08 2018-12-01 加拿大國家研究委員會 具改良之熱穩定性的分子油墨
TW201842088A (zh) 2017-02-08 2018-12-01 加拿大國家研究委員會 可印刷分子油墨
WO2018146619A2 (en) 2017-02-08 2018-08-16 National Research Council Of Canada Silver molecular ink with low viscosity and low processing temperature
EP4084586A1 (de) 2021-04-21 2022-11-02 LG Innotek Co., Ltd. Leiterplatte, bildsensormodul, linsenantriebsvorrichtung und kameramodul damit
CN114106019A (zh) * 2021-12-06 2022-03-01 桂林理工大学 吡唑-3-甲酸铜配合物的晶体结构及其磁性质

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3771973A (en) * 1971-05-10 1973-11-13 Hooker Chemical Corp Metal plating of synthetic polymers
US3980654A (en) * 1973-10-26 1976-09-14 Eastman Kodak Company Copper (II) complexes
US4582731A (en) 1983-09-01 1986-04-15 Battelle Memorial Institute Supercritical fluid molecular spray film deposition and powder formation
JPS60195077A (ja) * 1984-03-16 1985-10-03 奥野製薬工業株式会社 セラミツクスの無電解めつき用触媒組成物
US4761467A (en) * 1985-10-21 1988-08-02 Texaco Inc. Pyridine ligands for preparation of organic carbonates
US4818255A (en) * 1987-02-10 1989-04-04 Kozo Director-general of Agency of Industrial Science and Technology Iizuka Material for gas separation
US5767303A (en) * 1996-10-04 1998-06-16 Chiyoda Corporation Process of producing carbonic diester
US5789027A (en) 1996-11-12 1998-08-04 University Of Massachusetts Method of chemically depositing material onto a substrate
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features

Also Published As

Publication number Publication date
KR20040071193A (ko) 2004-08-11
WO2003053895A3 (en) 2004-01-15
EP1461345A2 (de) 2004-09-29
CN1602314A (zh) 2005-03-30
US6770122B2 (en) 2004-08-03
US20030165623A1 (en) 2003-09-04
TW200409829A (en) 2004-06-16
JP2005513117A (ja) 2005-05-12
IL162005A0 (en) 2005-11-20
EP1461345B1 (de) 2006-05-31
AU2002357160A8 (en) 2003-07-09
ATE327998T1 (de) 2006-06-15
AU2002357160A1 (en) 2003-07-09
WO2003053895A2 (en) 2003-07-03

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Legal Events

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8332 No legal effect for de