ATE32543T1 - Programmierbare speicherzelle und matrix. - Google Patents
Programmierbare speicherzelle und matrix.Info
- Publication number
- ATE32543T1 ATE32543T1 AT82900526T AT82900526T ATE32543T1 AT E32543 T1 ATE32543 T1 AT E32543T1 AT 82900526 T AT82900526 T AT 82900526T AT 82900526 T AT82900526 T AT 82900526T AT E32543 T1 ATE32543 T1 AT E32543T1
- Authority
- AT
- Austria
- Prior art keywords
- cell
- series
- elements
- memory
- memory line
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 1
- 238000003491 array Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17704—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
- H03K19/17708—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns using an AND matrix followed by an OR matrix, i.e. programmable logic arrays
- H03K19/17712—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns using an AND matrix followed by an OR matrix, i.e. programmable logic arrays one of the matrices at least being reprogrammable
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- Read Only Memory (AREA)
- Logic Circuits (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/220,644 US4380804A (en) | 1980-12-29 | 1980-12-29 | Earom cell matrix and logic arrays with common memory gate |
PCT/US1981/001762 WO1982002275A1 (en) | 1980-12-29 | 1981-12-28 | Programmable memory cell and array |
EP82900526A EP0067872B1 (de) | 1980-12-29 | 1981-12-28 | Programmierbare speicherzelle und matrix |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE32543T1 true ATE32543T1 (de) | 1988-03-15 |
Family
ID=22824368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT82900526T ATE32543T1 (de) | 1980-12-29 | 1981-12-28 | Programmierbare speicherzelle und matrix. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4380804A (de) |
EP (1) | EP0067872B1 (de) |
JP (1) | JPS57502024A (de) |
AT (1) | ATE32543T1 (de) |
AU (1) | AU543975B2 (de) |
CA (1) | CA1179428A (de) |
DE (2) | DE3176655D1 (de) |
DK (1) | DK384182A (de) |
WO (1) | WO1982002275A1 (de) |
ZA (1) | ZA818973B (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
CA1196419A (en) * | 1981-12-16 | 1985-11-05 | Inmos Corporation | Three gate non-volatile memory cell |
US4546455A (en) * | 1981-12-17 | 1985-10-08 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
NL8300497A (nl) * | 1983-02-10 | 1984-09-03 | Philips Nv | Halfgeleiderinrichting met niet-vluchtige geheugentransistors. |
US4516313A (en) * | 1983-05-27 | 1985-05-14 | Ncr Corporation | Unified CMOS/SNOS semiconductor fabrication process |
US4545034A (en) * | 1983-06-17 | 1985-10-01 | Texas Instruments Incorporated | Contactless tite RAM |
US4648073A (en) * | 1984-12-31 | 1987-03-03 | International Business Machines Corporation | Sequential shared access lines memory cells |
EP0211069A4 (de) * | 1985-02-11 | 1990-06-27 | Advanced Micro Devices Inc | Effiziente seitenmodusschreibschaltung für eeproms. |
DE68916855T2 (de) * | 1988-05-16 | 1995-01-19 | Matsushita Electronics Corp | Nichtflüchtige Halbleiterspeicheranordnung. |
US5198996A (en) * | 1988-05-16 | 1993-03-30 | Matsushita Electronics Corporation | Semiconductor non-volatile memory device |
US4947222A (en) * | 1988-07-15 | 1990-08-07 | Texas Instruments Incorporated | Electrically programmable and erasable memory cells with field plate conductor defined drain regions |
US5198994A (en) * | 1988-08-31 | 1993-03-30 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
WO1990015412A1 (en) * | 1989-06-08 | 1990-12-13 | Sierra Semiconductor Corporation | A high reliability non-volatile memory circuit and structure |
US5170373A (en) * | 1989-10-31 | 1992-12-08 | Sgs-Thomson Microelectronics, Inc. | Three transistor eeprom cell |
ZA912983B (en) | 1990-04-27 | 1992-01-29 | Takeda Chemical Industries Ltd | Benzimidazole derivatives,their production and use |
JPH05268070A (ja) * | 1992-07-31 | 1993-10-15 | Hitachi Ltd | 半導体集積回路装置 |
JPH05268069A (ja) * | 1992-07-31 | 1993-10-15 | Hitachi Ltd | 半導体集積回路装置 |
JPH09512658A (ja) * | 1994-04-29 | 1997-12-16 | アトメル・コーポレイション | 高速で、不揮発性の電気的にプログラム可能で、かつ消去可能なセルおよび方法 |
US6130842A (en) * | 1997-08-08 | 2000-10-10 | Cypress Semiconductor Corporation | Adjustable verify and program voltages in programmable devices |
US6327182B1 (en) | 1998-06-22 | 2001-12-04 | Motorola Inc. | Semiconductor device and a method of operation the same |
US6232634B1 (en) | 1998-07-29 | 2001-05-15 | Motorola, Inc. | Non-volatile memory cell and method for manufacturing same |
US6168958B1 (en) * | 1998-08-07 | 2001-01-02 | Advanced Micro Devices Inc. | Semiconductor structure having multiple thicknesses of high-K gate dielectrics and process of manufacture therefor |
EP1207534A1 (de) * | 2000-11-17 | 2002-05-22 | Motorola, Inc. | Integrierter EEPROM Schaltkreis und Programmierverfahren hierfür |
JP3683206B2 (ja) * | 2001-11-08 | 2005-08-17 | 沖電気工業株式会社 | 不揮発性半導体記憶装置およびその書き込み方法 |
US7164608B2 (en) * | 2004-07-28 | 2007-01-16 | Aplus Flash Technology, Inc. | NVRAM memory cell architecture that integrates conventional SRAM and flash cells |
US9754669B2 (en) | 2014-09-30 | 2017-09-05 | Anvo-Systems Dresden Gmbh | Flash memory arrangement with a common read-write circuit shared by partial matrices of a memory column |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4112507A (en) * | 1976-01-30 | 1978-09-05 | Westinghouse Electric Corp. | Addressable MNOS cell for non-volatile memories |
US4175291A (en) * | 1976-08-16 | 1979-11-20 | Ncr Corporation | Non-volatile random access memory cell |
JPS53142836A (en) * | 1977-05-19 | 1978-12-12 | Toshiba Corp | Dynamic memory unit |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
US4314265A (en) * | 1979-01-24 | 1982-02-02 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory devices with four layer electrodes |
JPS55138278A (en) * | 1979-04-11 | 1980-10-28 | Hitachi Ltd | Semiconducor non-volatile memory |
-
1980
- 1980-12-29 US US06/220,644 patent/US4380804A/en not_active Expired - Lifetime
-
1981
- 1981-12-04 CA CA000391484A patent/CA1179428A/en not_active Expired
- 1981-12-28 AT AT82900526T patent/ATE32543T1/de not_active IP Right Cessation
- 1981-12-28 AU AU80839/82A patent/AU543975B2/en not_active Ceased
- 1981-12-28 DE DE8282900526T patent/DE3176655D1/de not_active Expired
- 1981-12-28 WO PCT/US1981/001762 patent/WO1982002275A1/en active IP Right Grant
- 1981-12-28 EP EP82900526A patent/EP0067872B1/de not_active Expired
- 1981-12-28 DE DE198282900526T patent/DE67872T1/de active Pending
- 1981-12-28 JP JP82500541A patent/JPS57502024A/ja active Pending
- 1981-12-29 ZA ZA818973A patent/ZA818973B/xx unknown
-
1982
- 1982-08-27 DK DK384182A patent/DK384182A/da not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0067872A4 (de) | 1985-09-26 |
DK384182A (da) | 1982-08-27 |
WO1982002275A1 (en) | 1982-07-08 |
AU543975B2 (en) | 1985-05-09 |
JPS57502024A (de) | 1982-11-11 |
CA1179428A (en) | 1984-12-11 |
AU8083982A (en) | 1982-07-20 |
EP0067872A1 (de) | 1982-12-29 |
ZA818973B (en) | 1982-11-24 |
US4380804A (en) | 1983-04-19 |
DE67872T1 (de) | 1983-04-28 |
DE3176655D1 (en) | 1988-03-24 |
EP0067872B1 (de) | 1988-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE32543T1 (de) | Programmierbare speicherzelle und matrix. | |
US5294819A (en) | Single-transistor cell EEPROM array for analog or digital storage | |
US4648074A (en) | Reference circuit with semiconductor memory array | |
KR880014573A (ko) | 높은 수의 사이클 프로그래밍 인듀런스를 가지는 비휘발성 메모리 장치 | |
KR910010526A (ko) | 페이지 소거 가능한 플래쉬형 이이피롬 장치 | |
TW328179B (en) | Non-volatile semiconductor memory device | |
KR910019060A (ko) | 불휘발성 반도체 기억장치 | |
KR950704789A (ko) | 전계 산화물 아일랜드가 제거되는 메모리 어레이 및 방법(memory array with field oxide islands eliminated and method) | |
KR910006996A (ko) | 비휘발성 메모리 어레이 | |
US3760378A (en) | Semiconductor memory using variable threshold transistors | |
KR900011009A (ko) | 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 | |
EP0083194A3 (de) | Programmierbare und elektrisch löschbare Festwertspeicherzelle mit einem einzigen Transistor | |
US4881199A (en) | Read circuit for reading the state of memory cells | |
EP0361972A3 (de) | Nichtflüchtige Halbleiterspeicheranordnung mit NAND-Typ-Speicherzellenanordnungen | |
US6233176B1 (en) | Programmable semiconductor memory array having series-connected memory cells | |
KR920015379A (ko) | Eeprom 및 eeprom 독출 방법 | |
US10643690B2 (en) | Transposable feedback field-effect electronic device and array circuit using the same | |
KR920017118A (ko) | 불휘발성 반도체 기억장치 | |
KR940022554A (ko) | 반도체 불휘발성 기억 장치 및 디코더 회로 | |
EP0317323A3 (de) | Programmierbarer Halbleiterspeicher | |
US3720925A (en) | Memory system using variable threshold transistors | |
KR950004620B1 (ko) | 프로그램 가능한 불휘발성 스태틱 메모리 셀 및 그 메모리 | |
EP0365720B1 (de) | Programmierbarer Halbleiterspeicher | |
US4004286A (en) | Programmable random access memory (PRAM) integrated circuit memory device | |
KR950034269A (ko) | 비휘발성 반도체 메모리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |