JPS53142836A - Dynamic memory unit - Google Patents

Dynamic memory unit

Info

Publication number
JPS53142836A
JPS53142836A JP5709877A JP5709877A JPS53142836A JP S53142836 A JPS53142836 A JP S53142836A JP 5709877 A JP5709877 A JP 5709877A JP 5709877 A JP5709877 A JP 5709877A JP S53142836 A JPS53142836 A JP S53142836A
Authority
JP
Japan
Prior art keywords
memory unit
dynamic memory
region
volatile memory
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5709877A
Other languages
Japanese (ja)
Inventor
Shozo Saito
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5709877A priority Critical patent/JPS53142836A/en
Publication of JPS53142836A publication Critical patent/JPS53142836A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To perform the transfer of electric charges between the charge storage region and the bit line, by providing the non-volatile memory region adjacent to the charge transfer region and the charge storage region adjacent to it, and by controlling the gates of the charge transfer region and the non-volatile memory region.
JP5709877A 1977-05-19 1977-05-19 Dynamic memory unit Pending JPS53142836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5709877A JPS53142836A (en) 1977-05-19 1977-05-19 Dynamic memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5709877A JPS53142836A (en) 1977-05-19 1977-05-19 Dynamic memory unit

Publications (1)

Publication Number Publication Date
JPS53142836A true JPS53142836A (en) 1978-12-12

Family

ID=13046022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5709877A Pending JPS53142836A (en) 1977-05-19 1977-05-19 Dynamic memory unit

Country Status (1)

Country Link
JP (1) JPS53142836A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57502024A (en) * 1980-12-29 1982-11-11
JPS59967A (en) * 1983-06-03 1984-01-06 Hitachi Ltd Semiconductor nonvolatile memory
JPS6365674A (en) * 1986-09-05 1988-03-24 Agency Of Ind Science & Technol Non-volatile semiconductor random access memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57502024A (en) * 1980-12-29 1982-11-11
JPS59967A (en) * 1983-06-03 1984-01-06 Hitachi Ltd Semiconductor nonvolatile memory
JPS6365674A (en) * 1986-09-05 1988-03-24 Agency Of Ind Science & Technol Non-volatile semiconductor random access memory

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