ATE318007T1 - Photolithographisch strukturierte variable kondensatorstrukturen und herstellungsverfahren - Google Patents

Photolithographisch strukturierte variable kondensatorstrukturen und herstellungsverfahren

Info

Publication number
ATE318007T1
ATE318007T1 AT01935276T AT01935276T ATE318007T1 AT E318007 T1 ATE318007 T1 AT E318007T1 AT 01935276 T AT01935276 T AT 01935276T AT 01935276 T AT01935276 T AT 01935276T AT E318007 T1 ATE318007 T1 AT E318007T1
Authority
AT
Austria
Prior art keywords
electrically conductive
conductive layer
dielectric layer
variable capacitor
free portion
Prior art date
Application number
AT01935276T
Other languages
German (de)
English (en)
Inventor
Christopher L Chua
Eric Peeters
Schuylenbergh Koenraad F Van
Donald L Smith
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of ATE318007T1 publication Critical patent/ATE318007T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/02—Fixed inductances of the signal type without magnetic core

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Measuring Leads Or Probes (AREA)
AT01935276T 2000-05-17 2001-05-10 Photolithographisch strukturierte variable kondensatorstrukturen und herstellungsverfahren ATE318007T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/573,363 US6396677B1 (en) 2000-05-17 2000-05-17 Photolithographically-patterned variable capacitor structures and method of making

Publications (1)

Publication Number Publication Date
ATE318007T1 true ATE318007T1 (de) 2006-03-15

Family

ID=24291680

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01935276T ATE318007T1 (de) 2000-05-17 2001-05-10 Photolithographisch strukturierte variable kondensatorstrukturen und herstellungsverfahren

Country Status (10)

Country Link
US (3) US6396677B1 (enExample)
EP (1) EP1303863B1 (enExample)
JP (1) JP4980539B2 (enExample)
AT (1) ATE318007T1 (enExample)
AU (1) AU2001261384A1 (enExample)
DE (1) DE60117257T2 (enExample)
ES (1) ES2256239T3 (enExample)
MY (1) MY133936A (enExample)
TW (1) TWI244206B (enExample)
WO (1) WO2001088933A1 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429528B1 (en) * 1998-02-27 2002-08-06 Micron Technology, Inc. Multichip semiconductor package
US6799976B1 (en) * 1999-07-28 2004-10-05 Nanonexus, Inc. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US6812718B1 (en) 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US7247035B2 (en) 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
JP2001153886A (ja) * 1999-11-26 2001-06-08 Mitsubishi Electric Corp プローブカード、及びこれを備えたテスト装置
US6392524B1 (en) * 2000-06-09 2002-05-21 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6856225B1 (en) * 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6396677B1 (en) * 2000-05-17 2002-05-28 Xerox Corporation Photolithographically-patterned variable capacitor structures and method of making
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7579848B2 (en) 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US6456420B1 (en) * 2000-07-27 2002-09-24 Mcnc Microelectromechanical elevating structures
US20020096421A1 (en) * 2000-11-29 2002-07-25 Cohn Michael B. MEMS device with integral packaging
US6595787B2 (en) * 2001-02-09 2003-07-22 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
US6534249B2 (en) * 2001-02-09 2003-03-18 Xerox Corporation Method of making low cost integrated out-of-plane micro-device structures
US6635513B2 (en) * 2001-05-29 2003-10-21 Hewlett-Packard Development Company, L.P. Pre-curved spring bolster plate
WO2002098624A1 (en) * 2001-06-05 2002-12-12 Mikro Systems Inc. Methods for manufacturing three-dimensional devices and devices created thereby
US7141812B2 (en) * 2002-06-05 2006-11-28 Mikro Systems, Inc. Devices, methods, and systems involving castings
US7785098B1 (en) 2001-06-05 2010-08-31 Mikro Systems, Inc. Systems for large area micro mechanical systems
US6625004B1 (en) * 2001-08-31 2003-09-23 Superconductor Technologies, Inc. Electrostatic actuators with intrinsic stress gradient
DE60131650T2 (de) * 2001-09-20 2008-10-30 Stmicroelectronics S.R.L., Agrate Brianza Kondensator mit veränderlicher Kapazität
US6998696B2 (en) * 2001-09-21 2006-02-14 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
JP3890952B2 (ja) * 2001-10-18 2007-03-07 ソニー株式会社 容量可変型キャパシタ装置
US6870276B1 (en) * 2001-12-26 2005-03-22 Micron Technology, Inc. Apparatus for supporting microelectronic substrates
US7031136B2 (en) * 2002-04-09 2006-04-18 Ngimat Co. Variable capacitors, composite materials
JP4075503B2 (ja) * 2002-07-30 2008-04-16 ソニー株式会社 マイクロマシンおよびその製造方法
US7098577B2 (en) * 2002-10-21 2006-08-29 Hrl Laboratories, Llc Piezoelectric switch for tunable electronic components
US7085121B2 (en) 2002-10-21 2006-08-01 Hrl Laboratories, Llc Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters
US7656071B2 (en) * 2002-10-21 2010-02-02 Hrl Laboratories, Llc Piezoelectric actuator for tunable electronic components
US6856499B2 (en) 2003-03-28 2005-02-15 Northrop Gurmman Corporation MEMS variable inductor and capacitor
US6844214B1 (en) * 2003-08-21 2005-01-18 Xerox, Corporation Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication
US6973722B2 (en) * 2003-11-17 2005-12-13 Palo Alto Research Center Incorporated Release height adjustment of stressy metal devices by annealing before and after release
US6891711B1 (en) * 2004-04-08 2005-05-10 Kulite Semiconductor Products, Inc. Ultra-miniature, high temperature, capacitive inductive pressure transducer
US7279391B2 (en) * 2004-04-26 2007-10-09 Intel Corporation Integrated inductors and compliant interconnects for semiconductor packaging
US6935867B1 (en) 2004-05-24 2005-08-30 Alps Electric Co., Ltd. Connection unit between substrated and component and method for fabricating connection unit
DE112004002785B4 (de) * 2004-05-31 2014-03-13 Fujitsu Ltd. Variabler Kondensator und Herstellungsverfahren davon
US7265019B2 (en) * 2004-06-30 2007-09-04 International Business Machines Corporation Elastomeric CMOS based micro electromechanical varactor
US7456092B2 (en) * 2004-10-07 2008-11-25 Palo Alto Research Center Incorporated Self-releasing spring structures and methods
JP2006210843A (ja) * 2005-01-31 2006-08-10 Fujitsu Ltd 可変キャパシタ及びその製造方法
FR2884960B1 (fr) * 2005-04-25 2007-07-06 Commissariat Energie Atomique Micro-condensateur electromecanique a capacite variable et procede de fabrication d'un tel micro-condensateur
JP2007005635A (ja) * 2005-06-24 2007-01-11 Toshiba Corp 半導体装置
US7283347B2 (en) * 2005-08-31 2007-10-16 The United States Of America As Represented By The Secretary Of The Air Force Low cost digital variable capacitor
US7539003B2 (en) * 2005-12-01 2009-05-26 Lv Sensors, Inc. Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes
US7550855B2 (en) * 2005-12-02 2009-06-23 Palo Alto Research Center Incorporated Vertically spaced plural microsprings
JP4654897B2 (ja) * 2005-12-09 2011-03-23 イビデン株式会社 部品実装用ピンを有するプリント配線板の製造方法
JP4848752B2 (ja) 2005-12-09 2011-12-28 イビデン株式会社 部品実装用ピンを有するプリント配線板及びこれを使用した電子機器
JP2007165383A (ja) * 2005-12-09 2007-06-28 Ibiden Co Ltd 部品実装用ピンを形成したプリント基板
US20070145523A1 (en) * 2005-12-28 2007-06-28 Palo Alto Research Center Incorporated Integrateable capacitors and microcoils and methods of making thereof
US7517769B2 (en) * 2005-12-28 2009-04-14 Palo Alto Research Center Incorporated Integrateable capacitors and microcoils and methods of making thereof
US8282284B2 (en) * 2006-06-02 2012-10-09 MicroZeus, LLC Methods and systems for micro bearings
WO2007143623A2 (en) 2006-06-02 2007-12-13 Stalford Harold L Methods and systems for micro machines
US8159107B2 (en) * 2006-06-02 2012-04-17 Microzeus Llc Micro rotary machine and methods for using same
US8884474B2 (en) * 2006-06-02 2014-11-11 MicroZeus, LLC Method of fabricating a micro machine
US8915158B2 (en) * 2006-06-02 2014-12-23 MicroZeus, LLC Methods and systems for micro transmissions
US8134276B2 (en) * 2006-06-02 2012-03-13 MicroZeus, LLC Methods and systems for positioning micro elements
US9156674B2 (en) * 2006-06-02 2015-10-13 MicroZeus, LLC Micro transport machine and methods for using same
US8059385B2 (en) * 2006-12-05 2011-11-15 Wispry, Inc. Substrates with slotted metals and related methods
JP4910679B2 (ja) * 2006-12-21 2012-04-04 株式会社ニコン 可変キャパシタ、可変キャパシタ装置、高周波回路用フィルタ及び高周波回路
DE102006062485A1 (de) * 2006-12-28 2008-07-03 Robert Bosch Gmbh Elektrische Kontaktiervorrichtung, insbesondere für elektronische Schaltungen, und elektrische/elektronische Schaltung
DE102007012060A1 (de) * 2007-03-13 2008-09-18 Robert Bosch Gmbh Sensoranordnung zur Druckmessung
JP5083977B2 (ja) 2007-05-17 2012-11-28 パナソニック株式会社 電気機械素子、その駆動方法およびそれを用いた電気機器
US7927905B2 (en) * 2007-12-21 2011-04-19 Palo Alto Research Center Incorporated Method of producing microsprings having nanowire tip structures
US8122973B2 (en) * 2008-05-21 2012-02-28 Stalford Harold L Three dimensional (3D) robotic micro electro mechanical systems (MEMS) arm and system
EP2559533B1 (en) 2008-09-26 2020-04-15 United Technologies Corporation Casting
WO2010064543A1 (ja) * 2008-12-02 2010-06-10 株式会社明電舎 真空コンデンサ
US8749946B2 (en) * 2008-12-02 2014-06-10 Meidensha Corporation Vacuum capacitor
JP5482398B2 (ja) 2010-04-19 2014-05-07 株式会社明電舎 真空コンデンサ
US8490495B2 (en) 2010-05-05 2013-07-23 Consensic, Inc. Capacitive pressure sensor with vertical electrical feedthroughs and method to make the same
US8519534B2 (en) 2010-09-22 2013-08-27 Palo Alto Research Center Incorporated Microsprings partially embedded in a laminate structure and methods for producing same
US8441808B2 (en) 2010-09-22 2013-05-14 Palo Alto Research Center Incorporated Interposer with microspring contacts
US8294184B2 (en) 2011-02-23 2012-10-23 Qualcomm Mems Technologies, Inc. EMS tunable transistor
US8813824B2 (en) 2011-12-06 2014-08-26 Mikro Systems, Inc. Systems, devices, and/or methods for producing holes
US8525353B2 (en) 2011-12-19 2013-09-03 Palo Alto Research Center Incorporated Microspring structures adapted for target device cooling
US10510945B1 (en) * 2014-10-06 2019-12-17 National Technology & Engineering Solutions Of Sandia, Llc Magnetoelastically actuated MEMS device and methods for its manufacture
US10222265B2 (en) * 2016-08-19 2019-03-05 Obsidian Sensors, Inc. Thermomechanical device for measuring electromagnetic radiation
US10497774B2 (en) 2017-10-23 2019-12-03 Blackberry Limited Small-gap coplanar tunable capacitors and methods for manufacturing thereof
US10332687B2 (en) 2017-10-23 2019-06-25 Blackberry Limited Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US544599A (en) * 1895-08-13 Type -whiting machine
JPS5530113A (en) * 1978-08-22 1980-03-03 Nippon Telegraph & Telephone Electrostatically drive relay
CA2062710C (en) 1991-05-31 1996-05-14 Nobuo Shiga Transformer for monolithic microwave integrated circuit
US5336921A (en) 1992-01-27 1994-08-09 Motorola, Inc. Vertical trench inductor
FR2705492B1 (fr) * 1993-05-13 1995-06-30 Gec Alsthom T & D Sa Condensateur à haute stabilité thermique.
US5526172A (en) * 1993-07-27 1996-06-11 Texas Instruments Incorporated Microminiature, monolithic, variable electrical signal processor and apparatus including same
JPH07202278A (ja) * 1993-12-28 1995-08-04 Chodendo Sensor Kenkyusho:Kk 超伝導薄膜
US5446616A (en) * 1994-03-28 1995-08-29 Litton Systems, Inc. Electrode structure and method for anodically-bonded capacitive sensors
US5644349A (en) * 1994-09-07 1997-07-01 Xerox Corporation Mechanical capacitor
US5470790A (en) * 1994-10-17 1995-11-28 Intel Corporation Via hole profile and method of fabrication
DE4437261C1 (de) * 1994-10-18 1995-10-19 Siemens Ag Mikromechanisches elektrostatisches Relais
US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
JP3106389B2 (ja) * 1995-08-18 2000-11-06 株式会社村田製作所 可変容量コンデンサ
US5665648A (en) * 1995-12-21 1997-09-09 Hughes Electronics Integrated circuit spring contact fabrication methods
JPH1012123A (ja) * 1996-06-19 1998-01-16 Honda Motor Co Ltd 冷陰極とその製造方法
JP3566809B2 (ja) * 1996-08-12 2004-09-15 株式会社豊田中央研究所 多結晶シリコン薄膜の製造方法および多結晶シリコン薄膜構造体素子
JPH1079324A (ja) * 1996-09-04 1998-03-24 Murata Mfg Co Ltd 容量可変素子
JPH10189393A (ja) * 1996-12-19 1998-07-21 Murata Mfg Co Ltd 可変容量コンデンサ
US5905241A (en) * 1997-05-30 1999-05-18 Hyundai Motor Company Threshold microswitch and a manufacturing method thereof
US6245444B1 (en) 1997-10-02 2001-06-12 New Jersey Institute Of Technology Micromachined element and method of fabrication thereof
US6127908A (en) * 1997-11-17 2000-10-03 Massachusetts Institute Of Technology Microelectro-mechanical system actuator device and reconfigurable circuits utilizing same
US5944537A (en) * 1997-12-15 1999-08-31 Xerox Corporation Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices
US5979892A (en) * 1998-05-15 1999-11-09 Xerox Corporation Controlled cilia for object manipulation
JP2000021282A (ja) * 1998-07-07 2000-01-21 Omron Corp 静電マイクロリレー
US6242989B1 (en) * 1998-09-12 2001-06-05 Agere Systems Guardian Corp. Article comprising a multi-port variable capacitor
US6147582A (en) 1999-03-04 2000-11-14 Raytheon Company Substrate supported three-dimensional micro-coil
US6184755B1 (en) * 1999-07-16 2001-02-06 Lucent Technologies, Inc. Article comprising a variable inductor
US6229684B1 (en) * 1999-12-15 2001-05-08 Jds Uniphase Inc. Variable capacitor and associated fabrication method
US6392524B1 (en) * 2000-06-09 2002-05-21 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6396677B1 (en) * 2000-05-17 2002-05-28 Xerox Corporation Photolithographically-patterned variable capacitor structures and method of making
US6290510B1 (en) * 2000-07-27 2001-09-18 Xerox Corporation Spring structure with self-aligned release material

Also Published As

Publication number Publication date
EP1303863B1 (en) 2006-02-15
JP4980539B2 (ja) 2012-07-18
JP2004512671A (ja) 2004-04-22
US6606235B2 (en) 2003-08-12
ES2256239T3 (es) 2006-07-16
EP1303863A1 (en) 2003-04-23
DE60117257T2 (de) 2006-07-27
US6396677B1 (en) 2002-05-28
AU2001261384A1 (en) 2001-11-26
US6922327B2 (en) 2005-07-26
DE60117257D1 (de) 2006-04-20
US20030030965A1 (en) 2003-02-13
US20020080554A1 (en) 2002-06-27
WO2001088933A1 (en) 2001-11-22
EP1303863A4 (en) 2004-10-06
TWI244206B (en) 2005-11-21
MY133936A (en) 2007-11-30

Similar Documents

Publication Publication Date Title
ATE318007T1 (de) Photolithographisch strukturierte variable kondensatorstrukturen und herstellungsverfahren
US6597560B2 (en) Micro-electro-mechanical varactor and a method of making and using thereof
JP2004512671A5 (enExample)
US20020079743A1 (en) MEMS-switched stepped variable capacitor and method of making same
FI20000339A7 (fi) Mikromekaaninen säädettävä kondensaattori ja integroitu säädettävä resonaattori
US7141989B1 (en) Methods and apparatus for a MEMS varactor
WO2005112122A3 (en) Nanowire varactor diode and methods of making same
KR970023743A (ko) 반도체장치의 제조방법
EP1113498A3 (en) Voltage variable capacitor with improved c-v linearity
FR2808924B1 (fr) Condenseur a capacite variable
KR20010097701A (ko) 고주파용 ｆｂａｒ 공진기 및 그 제조방법
Bakri-Kassem et al. Two movable plate nitride loaded MEMS variable capacitor
KR970054121A (ko) 반도체소자의 캐패시터 형성방법
KR970054060A (ko) 반도체 메모리 장치의 커패시터 제조방법
TW202610928A (zh) 微機電裝置
KR960002844A (ko) 반도체소자의 캐패시터 제조방법
KR960039373A (ko) 반도체 소자의 캐패시터 제조방법
KR970018206A (ko) 반도체 장치의 커패시터 제조방법
KR950030364A (ko) 캐패시터 제조방법
KR960043182A (ko) 반도체 장치의 커패시터 제조방법
KR920008862A (ko) 고용량의 커패시터를 갖는 반도체 장치의 제조방법
Jin et al. Micromachined tunable RF capacitor with comb structure
KR960026865A (ko) 반도체소자의 캐패시터 제조방법
Yo-Tak et al. Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Using a Corrugated Bridge with HRS MEMS Package
KR970024133A (ko) 반도체 소자의 저장전극 형성방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties