ATE288949T1 - Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung - Google Patents
Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmungInfo
- Publication number
- ATE288949T1 ATE288949T1 AT99959933T AT99959933T ATE288949T1 AT E288949 T1 ATE288949 T1 AT E288949T1 AT 99959933 T AT99959933 T AT 99959933T AT 99959933 T AT99959933 T AT 99959933T AT E288949 T1 ATE288949 T1 AT E288949T1
- Authority
- AT
- Austria
- Prior art keywords
- slurry
- polishing
- cerium oxide
- producing
- mus
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36270798 | 1998-12-21 | ||
| US13637199P | 1999-05-26 | 1999-05-26 | |
| JP33110799A JP3983949B2 (ja) | 1998-12-21 | 1999-11-22 | 研磨用酸化セリウムスラリー、その製造法及び研磨方法 |
| PCT/JP1999/007166 WO2000037578A1 (en) | 1998-12-21 | 1999-12-21 | Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE288949T1 true ATE288949T1 (de) | 2005-02-15 |
Family
ID=27340458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99959933T ATE288949T1 (de) | 1998-12-21 | 1999-12-21 | Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6478836B1 (https=) |
| EP (1) | EP1056816B1 (https=) |
| JP (1) | JP3983949B2 (https=) |
| AT (1) | ATE288949T1 (https=) |
| DE (1) | DE69923666T2 (https=) |
| ES (1) | ES2235540T3 (https=) |
| TW (1) | TW531555B (https=) |
| WO (1) | WO2000037578A1 (https=) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100797218B1 (ko) * | 1998-12-25 | 2008-01-23 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
| EP1201725A4 (en) * | 1999-06-28 | 2007-09-12 | Nissan Chemical Ind Ltd | ABRASIVE COMPOUND FOR HARD DISK GLASS TRAY |
| KR100480760B1 (ko) | 2000-10-02 | 2005-04-07 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 세륨계 연마재 및 세륨계 연마재의 제조방법 |
| US7037352B2 (en) * | 2000-12-12 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Polishing particle and method for producing polishing particle |
| EP1369906B1 (en) * | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polishing compound and method for polishing substrate |
| TWI272249B (en) * | 2001-02-27 | 2007-02-01 | Nissan Chemical Ind Ltd | Crystalline ceric oxide sol and process for producing the same |
| JP2002346912A (ja) * | 2001-05-18 | 2002-12-04 | Nippon Sheet Glass Co Ltd | 情報記録媒体用ガラス基板及びその製造方法 |
| KR100575442B1 (ko) * | 2001-11-16 | 2006-05-03 | 쇼와 덴코 가부시키가이샤 | 세륨계 연마재 및 세륨계 연마재 슬러리 |
| US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
| KR100477939B1 (ko) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | 단결정 산화세륨 분말의 제조방법 |
| JP2004066384A (ja) * | 2002-08-06 | 2004-03-04 | Kaoru Umeya | ペースト状研磨工具及び研磨方法 |
| KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
| US20080219130A1 (en) * | 2003-08-14 | 2008-09-11 | Mempile Inc. C/O Phs Corporate Services, Inc. | Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium |
| US20070166216A1 (en) * | 2003-09-12 | 2007-07-19 | Hitachi Chemical Co., Ltd. | Cerium salt, producing method thereof, cerium oxide and cerium based polishing slurry |
| JP2005138197A (ja) * | 2003-11-04 | 2005-06-02 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| JP4546071B2 (ja) * | 2003-12-10 | 2010-09-15 | パナソニック株式会社 | 半導体装置の製造方法 |
| CN1667026B (zh) | 2004-03-12 | 2011-11-30 | K.C.科技股份有限公司 | 抛光浆料及其制备方法和基板的抛光方法 |
| TWI370843B (en) * | 2004-03-16 | 2012-08-21 | Samsung Corning Prec Mat Co | Ceria slurry for polishing semiconductor thin layer |
| TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| TWI273632B (en) * | 2004-07-28 | 2007-02-11 | K C Tech Co Ltd | Polishing slurry, method of producing same, and method of polishing substrate |
| TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
| JP5013671B2 (ja) * | 2004-12-28 | 2012-08-29 | 日揮触媒化成株式会社 | 金属酸化物ゾルの製造方法および金属酸化物ゾル |
| KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| AT502308B1 (de) * | 2005-07-20 | 2010-03-15 | Treibacher Ind Ag | Glasschleifmittel auf ceroxidbasis und verfahren zu dessen herstellung |
| US7708904B2 (en) * | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| KR101103748B1 (ko) * | 2005-09-27 | 2012-01-06 | 삼성코닝정밀소재 주식회사 | 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법 |
| WO2007069735A1 (ja) * | 2005-12-15 | 2007-06-21 | Mitsui Mining & Smelting Co., Ltd. | 脱酸素剤及び脱酸素剤の製造方法 |
| JP5237542B2 (ja) * | 2006-10-03 | 2013-07-17 | 三井金属鉱業株式会社 | 酸化セリウム系研摩材 |
| WO2009056153A1 (en) * | 2007-10-30 | 2009-05-07 | Pall Corporation | Method and system for manufacturing wafer-like slices from a substrate material |
| JP5499556B2 (ja) * | 2008-11-11 | 2014-05-21 | 日立化成株式会社 | スラリ及び研磨液セット並びにこれらから得られるcmp研磨液を用いた基板の研磨方法及び基板 |
| FI20095088L (fi) * | 2009-02-02 | 2010-08-03 | Lauri Ylikorpi | Päällysteen poistoaine |
| US8859428B2 (en) | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
| CN104130714B (zh) * | 2014-07-01 | 2015-10-28 | 蚌埠市高华电子有限公司 | 一种含有磨料的适用于金属的混合抛光液及其制备方法 |
| EP3020689A1 (en) | 2014-11-12 | 2016-05-18 | Rhodia Operations | Cerium oxide particles and method for production thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS629739A (ja) * | 1985-07-05 | 1987-01-17 | Nissan Chem Ind Ltd | 精密鋳型作製用結合剤 |
| FR2604443A1 (fr) | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
| US5266088A (en) * | 1992-09-23 | 1993-11-30 | Nicsand | Water-based polish |
| JP3311203B2 (ja) * | 1995-06-13 | 2002-08-05 | 株式会社東芝 | 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法 |
-
1999
- 1999-11-22 JP JP33110799A patent/JP3983949B2/ja not_active Expired - Lifetime
- 1999-12-21 TW TW088122526A patent/TW531555B/zh not_active IP Right Cessation
- 1999-12-21 ES ES99959933T patent/ES2235540T3/es not_active Expired - Lifetime
- 1999-12-21 DE DE69923666T patent/DE69923666T2/de not_active Expired - Lifetime
- 1999-12-21 EP EP99959933A patent/EP1056816B1/en not_active Expired - Lifetime
- 1999-12-21 WO PCT/JP1999/007166 patent/WO2000037578A1/en not_active Ceased
- 1999-12-21 AT AT99959933T patent/ATE288949T1/de active
-
2000
- 2000-05-26 US US09/578,481 patent/US6478836B1/en not_active Expired - Lifetime
-
2001
- 2001-10-03 US US09/968,846 patent/US6387139B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3983949B2 (ja) | 2007-09-26 |
| DE69923666T2 (de) | 2005-11-17 |
| ES2235540T3 (es) | 2005-07-01 |
| JP2000239654A (ja) | 2000-09-05 |
| US6387139B1 (en) | 2002-05-14 |
| TW531555B (en) | 2003-05-11 |
| US20020032989A1 (en) | 2002-03-21 |
| EP1056816B1 (en) | 2005-02-09 |
| EP1056816A1 (en) | 2000-12-06 |
| US6478836B1 (en) | 2002-11-12 |
| DE69923666D1 (de) | 2005-03-17 |
| WO2000037578A1 (en) | 2000-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
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