ATE288949T1 - Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung - Google Patents

Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung

Info

Publication number
ATE288949T1
ATE288949T1 AT99959933T AT99959933T ATE288949T1 AT E288949 T1 ATE288949 T1 AT E288949T1 AT 99959933 T AT99959933 T AT 99959933T AT 99959933 T AT99959933 T AT 99959933T AT E288949 T1 ATE288949 T1 AT E288949T1
Authority
AT
Austria
Prior art keywords
slurry
polishing
cerium oxide
producing
mus
Prior art date
Application number
AT99959933T
Other languages
German (de)
English (en)
Inventor
Takanori Kido
Masayuki Sanbayashi
Fumio Tsujino
Kagetaka Ichikawa
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE288949T1 publication Critical patent/ATE288949T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT99959933T 1998-12-21 1999-12-21 Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung ATE288949T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP36270798 1998-12-21
US13637199P 1999-05-26 1999-05-26
JP33110799A JP3983949B2 (ja) 1998-12-21 1999-11-22 研磨用酸化セリウムスラリー、その製造法及び研磨方法
PCT/JP1999/007166 WO2000037578A1 (en) 1998-12-21 1999-12-21 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry

Publications (1)

Publication Number Publication Date
ATE288949T1 true ATE288949T1 (de) 2005-02-15

Family

ID=27340458

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99959933T ATE288949T1 (de) 1998-12-21 1999-12-21 Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung

Country Status (8)

Country Link
US (2) US6478836B1 (https=)
EP (1) EP1056816B1 (https=)
JP (1) JP3983949B2 (https=)
AT (1) ATE288949T1 (https=)
DE (1) DE69923666T2 (https=)
ES (1) ES2235540T3 (https=)
TW (1) TW531555B (https=)
WO (1) WO2000037578A1 (https=)

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EP1201725A4 (en) * 1999-06-28 2007-09-12 Nissan Chemical Ind Ltd ABRASIVE COMPOUND FOR HARD DISK GLASS TRAY
KR100480760B1 (ko) 2000-10-02 2005-04-07 미쓰이 긴조꾸 고교 가부시키가이샤 세륨계 연마재 및 세륨계 연마재의 제조방법
US7037352B2 (en) * 2000-12-12 2006-05-02 Showa Denko Kabushiki Kaisha Polishing particle and method for producing polishing particle
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TWI272249B (en) * 2001-02-27 2007-02-01 Nissan Chemical Ind Ltd Crystalline ceric oxide sol and process for producing the same
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
KR100575442B1 (ko) * 2001-11-16 2006-05-03 쇼와 덴코 가부시키가이샤 세륨계 연마재 및 세륨계 연마재 슬러리
US7666239B2 (en) * 2001-11-16 2010-02-23 Ferro Corporation Hydrothermal synthesis of cerium-titanium oxide for use in CMP
KR100477939B1 (ko) * 2002-04-15 2005-03-18 주식회사 엘지화학 단결정 산화세륨 분말의 제조방법
JP2004066384A (ja) * 2002-08-06 2004-03-04 Kaoru Umeya ペースト状研磨工具及び研磨方法
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Cmp용 세리아 연마제 및 그 제조 방법
US20080219130A1 (en) * 2003-08-14 2008-09-11 Mempile Inc. C/O Phs Corporate Services, Inc. Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium
US20070166216A1 (en) * 2003-09-12 2007-07-19 Hitachi Chemical Co., Ltd. Cerium salt, producing method thereof, cerium oxide and cerium based polishing slurry
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4546071B2 (ja) * 2003-12-10 2010-09-15 パナソニック株式会社 半導体装置の製造方法
CN1667026B (zh) 2004-03-12 2011-11-30 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
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US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
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TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
JP5013671B2 (ja) * 2004-12-28 2012-08-29 日揮触媒化成株式会社 金属酸化物ゾルの製造方法および金属酸化物ゾル
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법
AT502308B1 (de) * 2005-07-20 2010-03-15 Treibacher Ind Ag Glasschleifmittel auf ceroxidbasis und verfahren zu dessen herstellung
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
KR101103748B1 (ko) * 2005-09-27 2012-01-06 삼성코닝정밀소재 주식회사 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법
WO2007069735A1 (ja) * 2005-12-15 2007-06-21 Mitsui Mining & Smelting Co., Ltd. 脱酸素剤及び脱酸素剤の製造方法
JP5237542B2 (ja) * 2006-10-03 2013-07-17 三井金属鉱業株式会社 酸化セリウム系研摩材
WO2009056153A1 (en) * 2007-10-30 2009-05-07 Pall Corporation Method and system for manufacturing wafer-like slices from a substrate material
JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるcmp研磨液を用いた基板の研磨方法及び基板
FI20095088L (fi) * 2009-02-02 2010-08-03 Lauri Ylikorpi Päällysteen poistoaine
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
CN104130714B (zh) * 2014-07-01 2015-10-28 蚌埠市高华电子有限公司 一种含有磨料的适用于金属的混合抛光液及其制备方法
EP3020689A1 (en) 2014-11-12 2016-05-18 Rhodia Operations Cerium oxide particles and method for production thereof

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JPS629739A (ja) * 1985-07-05 1987-01-17 Nissan Chem Ind Ltd 精密鋳型作製用結合剤
FR2604443A1 (fr) 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
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JP3311203B2 (ja) * 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法

Also Published As

Publication number Publication date
JP3983949B2 (ja) 2007-09-26
DE69923666T2 (de) 2005-11-17
ES2235540T3 (es) 2005-07-01
JP2000239654A (ja) 2000-09-05
US6387139B1 (en) 2002-05-14
TW531555B (en) 2003-05-11
US20020032989A1 (en) 2002-03-21
EP1056816B1 (en) 2005-02-09
EP1056816A1 (en) 2000-12-06
US6478836B1 (en) 2002-11-12
DE69923666D1 (de) 2005-03-17
WO2000037578A1 (en) 2000-06-29

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