ATE263852T1 - Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats - Google Patents
Vorrichtung und verfahren zur epitaktischen bearbeitung eines substratsInfo
- Publication number
- ATE263852T1 ATE263852T1 AT01946908T AT01946908T ATE263852T1 AT E263852 T1 ATE263852 T1 AT E263852T1 AT 01946908 T AT01946908 T AT 01946908T AT 01946908 T AT01946908 T AT 01946908T AT E263852 T1 ATE263852 T1 AT E263852T1
- Authority
- AT
- Austria
- Prior art keywords
- susceptor
- inductor
- processing
- temperature uniformity
- epitactically
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/495,402 US6436796B1 (en) | 2000-01-31 | 2000-01-31 | Systems and methods for epitaxial processing of a semiconductor substrate |
PCT/US2001/002095 WO2001055479A1 (en) | 2000-01-31 | 2001-01-22 | Apparatus and method for epitaxially processing a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE263852T1 true ATE263852T1 (de) | 2004-04-15 |
Family
ID=23968515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01946908T ATE263852T1 (de) | 2000-01-31 | 2001-01-22 | Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats |
Country Status (7)
Country | Link |
---|---|
US (1) | US6436796B1 (de) |
EP (1) | EP1252364B1 (de) |
JP (1) | JP4970683B2 (de) |
KR (1) | KR100694351B1 (de) |
AT (1) | ATE263852T1 (de) |
DE (1) | DE60102669T2 (de) |
WO (1) | WO2001055479A1 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4427254B2 (ja) * | 2001-03-20 | 2010-03-03 | マットソン テクノロジイ インコーポレイテッド | 誘電体皮膜を堆積するための方法 |
KR20020080954A (ko) * | 2001-04-18 | 2002-10-26 | 주성엔지니어링(주) | 냉벽 화학기상증착 방법 및 장치 |
TW559905B (en) * | 2001-08-10 | 2003-11-01 | Toshiba Corp | Vertical chemical vapor deposition system cross-reference to related applications |
KR100402332B1 (ko) * | 2001-09-07 | 2003-10-22 | 주식회사 시스넥스 | 균일하게 가스분사가 이루어지는 샤워헤드와유도가열방식에 의해 서셉터 상부의 온도를 균일하게가열하는 수직형 화학기상증착 반응기 |
US20040247787A1 (en) * | 2002-04-19 | 2004-12-09 | Mackie Neil M. | Effluent pressure control for use in a processing system |
WO2003089682A1 (en) * | 2002-04-19 | 2003-10-30 | Mattson Technology, Inc. | System for depositing a film onto a substrate using a low vapor pressure gas precursor |
DE10302653A1 (de) * | 2003-01-20 | 2004-08-19 | Htm Reetz Gmbh | Vorrichtung zur Thermomigration |
DE102007023970A1 (de) * | 2007-05-23 | 2008-12-04 | Aixtron Ag | Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate |
WO2009120859A1 (en) * | 2008-03-26 | 2009-10-01 | Gt Solar, Inc. | Gold-coated polysilicon reactor system and method |
US20100075488A1 (en) * | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
KR101121432B1 (ko) * | 2010-04-20 | 2012-03-16 | 엘아이지에이디피 주식회사 | 서셉터 코팅장치 및 코팅방법 |
JP4676567B1 (ja) * | 2010-07-20 | 2011-04-27 | 三井造船株式会社 | 半導体基板熱処理装置 |
KR101205433B1 (ko) * | 2010-07-28 | 2012-11-28 | 국제엘렉트릭코리아 주식회사 | 기판 서셉터 및 그것을 갖는 증착 장치 |
CN102505145B (zh) * | 2011-10-28 | 2014-12-10 | 江西赛维Ldk太阳能多晶硅有限公司 | 石墨预热片、半导体预热装置、硅芯炉及磷检炉 |
US20130130184A1 (en) * | 2011-11-21 | 2013-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Controlling Wafer Temperature |
CN103160810B (zh) * | 2011-12-09 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于感应加热的托盘及等离子体加工设备 |
TWI650832B (zh) | 2013-12-26 | 2019-02-11 | 維克儀器公司 | 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具 |
US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
JP2016035080A (ja) * | 2014-08-01 | 2016-03-17 | 大陽日酸株式会社 | サセプタカバーおよび該サセプタカバーを備えた気相成長装置 |
JP6361495B2 (ja) * | 2014-12-22 | 2018-07-25 | 東京エレクトロン株式会社 | 熱処理装置 |
ITUB20160556A1 (it) * | 2016-02-08 | 2017-08-08 | L P E S P A | Suscettore con perno riscaldato e reattore per deposizione epitassiale |
WO2018051304A1 (en) * | 2016-09-19 | 2018-03-22 | King Abdullah University Of Science And Technology | Susceptor |
USD860146S1 (en) | 2017-11-30 | 2019-09-17 | Veeco Instruments Inc. | Wafer carrier with a 33-pocket configuration |
USD858469S1 (en) | 2018-03-26 | 2019-09-03 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD863239S1 (en) | 2018-03-26 | 2019-10-15 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD854506S1 (en) | 2018-03-26 | 2019-07-23 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD860147S1 (en) | 2018-03-26 | 2019-09-17 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD866491S1 (en) | 2018-03-26 | 2019-11-12 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
US11582837B2 (en) | 2018-05-18 | 2023-02-14 | Hateo Corporation | Temperature-regulating appliance with removable base |
US11483903B2 (en) * | 2018-05-18 | 2022-10-25 | Hatco Corporation | Multi-coil induction warming system |
US11609121B2 (en) | 2018-05-18 | 2023-03-21 | Hatco Corporation | Sensor and control systems for food preparation |
DE102018114208A1 (de) * | 2018-06-14 | 2019-12-19 | Aixtron Se | Abdeckplatte zur Abdeckung der zur Prozesskammer weisenden Seite eines Suszeptors einer Vorrichtung zum Abscheiden von SiC-Schichten |
CN110306171B (zh) * | 2019-06-28 | 2023-09-08 | 郑州磨料磨具磨削研究所有限公司 | 一种改善气体分布的沉积室及mpcvd装置 |
CN112366174B (zh) * | 2020-09-30 | 2023-10-13 | 华灿光电(浙江)有限公司 | 石墨基座和mocvd设备 |
CN113862780A (zh) * | 2021-08-16 | 2021-12-31 | 西安电子科技大学芜湖研究院 | 一种应用于mocvd设备的可伸缩基座 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58158438U (ja) | 1982-04-16 | 1983-10-22 | 東芝機械株式会社 | エピタキシヤル成長装置のコイル保持装置 |
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
JPS6318618A (ja) * | 1986-07-11 | 1988-01-26 | Toshiba Ceramics Co Ltd | サセプタ−用カバ− |
JPS63119525A (ja) * | 1986-11-08 | 1988-05-24 | Hitachi Electronics Eng Co Ltd | プラズマcvd装置 |
JPH025518A (ja) * | 1988-06-24 | 1990-01-10 | Nec Corp | 気相成長装置 |
JPH03160716A (ja) * | 1989-11-20 | 1991-07-10 | Kyushu Electron Metal Co Ltd | サセプターの温度制御方法 |
JPH0410333U (de) * | 1990-05-16 | 1992-01-29 | ||
JPH0653139A (ja) * | 1992-07-30 | 1994-02-25 | Nec Corp | サセプタ |
JP3313789B2 (ja) | 1992-11-09 | 2002-08-12 | 株式会社日立国際電気 | 基板処理方法及び半導体製造装置及び半導体装置の製造方法 |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5824158A (en) * | 1993-06-30 | 1998-10-20 | Kabushiki Kaisha Kobe Seiko Sho | Chemical vapor deposition using inductively coupled plasma and system therefor |
JP3824675B2 (ja) | 1995-03-03 | 2006-09-20 | 有限会社デジタル・ウェーブ | 結晶製造装置 |
JP3206375B2 (ja) * | 1995-06-20 | 2001-09-10 | 信越半導体株式会社 | 単結晶薄膜の製造方法 |
US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
JPH10168565A (ja) * | 1996-12-13 | 1998-06-23 | Mitsubishi Electric Corp | イオン化pvd装置および半導体装置の製造方法 |
US6217662B1 (en) * | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
US6184489B1 (en) * | 1998-04-13 | 2001-02-06 | Nec Corporation | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
US6200911B1 (en) * | 1998-04-21 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power |
DE19934336A1 (de) * | 1998-09-03 | 2000-03-09 | Siemens Ag | Vorrichtung zum Herstellen und Bearbeiten von Halbleitersubstraten |
US6200433B1 (en) * | 1999-11-01 | 2001-03-13 | Applied Materials, Inc. | IMP technology with heavy gas sputtering |
-
2000
- 2000-01-31 US US09/495,402 patent/US6436796B1/en not_active Expired - Lifetime
-
2001
- 2001-01-22 KR KR1020027009824A patent/KR100694351B1/ko active IP Right Grant
- 2001-01-22 AT AT01946908T patent/ATE263852T1/de not_active IP Right Cessation
- 2001-01-22 JP JP2001554504A patent/JP4970683B2/ja not_active Expired - Lifetime
- 2001-01-22 DE DE60102669T patent/DE60102669T2/de not_active Expired - Lifetime
- 2001-01-22 EP EP01946908A patent/EP1252364B1/de not_active Expired - Lifetime
- 2001-01-22 WO PCT/US2001/002095 patent/WO2001055479A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1252364B1 (de) | 2004-04-07 |
EP1252364A1 (de) | 2002-10-30 |
DE60102669D1 (de) | 2004-05-13 |
DE60102669T2 (de) | 2005-06-16 |
US6436796B1 (en) | 2002-08-20 |
JP4970683B2 (ja) | 2012-07-11 |
KR20020086486A (ko) | 2002-11-18 |
JP2003520746A (ja) | 2003-07-08 |
KR100694351B1 (ko) | 2007-03-12 |
WO2001055479A1 (en) | 2001-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE263852T1 (de) | Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats | |
ATE440376T1 (de) | Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats | |
US5155062A (en) | Method for silicon carbide chemical vapor deposition using levitated wafer system | |
TW200721271A (en) | Method and apparatus for the low temperature deposition of doped silicon nitride films | |
ES2184354T3 (es) | Crecimiento de capas epitaxiales muy uniformes de carburo de silicio. | |
TW200509291A (en) | MEMS based multi-polar electrostatic chuck | |
TW200708628A (en) | Method for silicon nitride chemical vapor deposition | |
TW281778B (en) | Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers | |
ATE495282T1 (de) | Vorrichtung und verfahren zum abscheiden kristalliner schichten wahlweise mittels mocvd oder hvpe | |
DE60133092D1 (de) | Örtliche erwärmung und kühlung von substraten | |
SG157279A1 (en) | Method for producing an epitaxially coated semiconductor wafer | |
DE60135672D1 (de) | Elektrostatisch festgeklemmter randring für die plasmaverarbeitung | |
GB1425965A (en) | Method of treating monocrystalline wafers | |
WO2009075124A1 (ja) | 半導体装置の製造方法および半導体装置 | |
SE9500326D0 (sv) | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD | |
ATE230445T1 (de) | Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern | |
WO2000077830A3 (en) | A method for the preparation of an epitaxial silicon wafer with intrinsic gettering | |
CN108028179A (zh) | 用于沉积共形bcn膜的方法 | |
EP0164928A3 (de) | Senkrechter Heisswandreaktor zur chemischen Abscheidung aus der Gasphase | |
IL135550A0 (en) | Method and apparatus for temperature controlled vapor deposition on a substrate | |
TWI255874B (en) | Method for forming an epitaxial silicon wafer with a denuded zone | |
KR101926687B1 (ko) | 에피 웨이퍼 제조 장치, 에피 웨이퍼 제조 방법 및 에피 웨이퍼 | |
DE60322042D1 (de) | Verfahren zur ausbildung einer silizium-epitaxialschicht | |
EP0728850A3 (de) | Reaktionskammer mit quasi heisser Wandung | |
FR3068506B1 (fr) | Procede pour preparer un support pour une structure semi-conductrice |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |