ATE257522T1 - Herstellungsverfahren für ruthenium- metallschichten - Google Patents

Herstellungsverfahren für ruthenium- metallschichten

Info

Publication number
ATE257522T1
ATE257522T1 AT99942116T AT99942116T ATE257522T1 AT E257522 T1 ATE257522 T1 AT E257522T1 AT 99942116 T AT99942116 T AT 99942116T AT 99942116 T AT99942116 T AT 99942116T AT E257522 T1 ATE257522 T1 AT E257522T1
Authority
AT
Austria
Prior art keywords
ruthenium metal
production process
metal layers
dienes
diene
Prior art date
Application number
AT99942116T
Other languages
English (en)
Inventor
Brian A Vaartstra
Eugene P Marsh
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE257522T1 publication Critical patent/ATE257522T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
AT99942116T 1998-08-27 1999-08-11 Herstellungsverfahren für ruthenium- metallschichten ATE257522T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/140,878 US6074945A (en) 1998-08-27 1998-08-27 Methods for preparing ruthenium metal films
PCT/US1999/018261 WO2000012777A1 (en) 1998-08-27 1999-08-11 Methods for preparing ruthenium metal films

Publications (1)

Publication Number Publication Date
ATE257522T1 true ATE257522T1 (de) 2004-01-15

Family

ID=22493203

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99942116T ATE257522T1 (de) 1998-08-27 1999-08-11 Herstellungsverfahren für ruthenium- metallschichten

Country Status (10)

Country Link
US (1) US6074945A (de)
EP (1) EP1115900B1 (de)
JP (1) JP2002523907A (de)
KR (1) KR100629029B1 (de)
AT (1) ATE257522T1 (de)
AU (1) AU5556399A (de)
DE (1) DE69914092T2 (de)
MY (1) MY121432A (de)
TW (1) TW504521B (de)
WO (1) WO2000012777A1 (de)

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US5962716A (en) 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6197628B1 (en) 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
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US6323081B1 (en) * 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
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US6429127B1 (en) 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
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JP2002212112A (ja) * 2001-01-22 2002-07-31 Tanaka Kikinzoku Kogyo Kk 化学気相蒸着用のルテニウム化合物並びにルテニウム薄膜及びルテニウム化合物薄膜の化学気相蒸着方法。
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WO2019088722A1 (ko) * 2017-11-01 2019-05-09 (주)디엔에프 루테늄함유 박막의 제조방법 및 이로부터 제조된 루테늄함유 박막
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Also Published As

Publication number Publication date
AU5556399A (en) 2000-03-21
DE69914092T2 (de) 2004-10-14
US6074945A (en) 2000-06-13
TW504521B (en) 2002-10-01
WO2000012777A1 (en) 2000-03-09
EP1115900A1 (de) 2001-07-18
JP2002523907A (ja) 2002-07-30
KR100629029B1 (ko) 2006-09-26
MY121432A (en) 2006-01-28
EP1115900B1 (de) 2004-01-07
KR20010079702A (ko) 2001-08-22
DE69914092D1 (de) 2004-02-12

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