ATE213360T1 - Esd-schutzstruktur für halbleiterchips - Google Patents

Esd-schutzstruktur für halbleiterchips

Info

Publication number
ATE213360T1
ATE213360T1 AT96942060T AT96942060T ATE213360T1 AT E213360 T1 ATE213360 T1 AT E213360T1 AT 96942060 T AT96942060 T AT 96942060T AT 96942060 T AT96942060 T AT 96942060T AT E213360 T1 ATE213360 T1 AT E213360T1
Authority
AT
Austria
Prior art keywords
active areas
transistor
coupled
protection structure
well resistors
Prior art date
Application number
AT96942060T
Other languages
English (en)
Inventor
Stephen L Casper
Manny K F Ma
Joseph C Sher
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE213360T1 publication Critical patent/ATE213360T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
AT96942060T 1995-11-30 1996-11-25 Esd-schutzstruktur für halbleiterchips ATE213360T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56542195A 1995-11-30 1995-11-30
PCT/US1996/018886 WO1997020348A1 (en) 1995-11-30 1996-11-25 Structure for esd protection in semiconductor chips

Publications (1)

Publication Number Publication Date
ATE213360T1 true ATE213360T1 (de) 2002-02-15

Family

ID=24258518

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96942060T ATE213360T1 (de) 1995-11-30 1996-11-25 Esd-schutzstruktur für halbleiterchips

Country Status (8)

Country Link
US (2) US5767552A (de)
EP (1) EP0864176B1 (de)
JP (1) JP3232335B2 (de)
KR (1) KR100298819B1 (de)
AT (1) ATE213360T1 (de)
AU (1) AU1123597A (de)
DE (1) DE69619265T2 (de)
WO (1) WO1997020348A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE213360T1 (de) * 1995-11-30 2002-02-15 Micron Technology Inc Esd-schutzstruktur für halbleiterchips
JP3535744B2 (ja) * 1998-06-26 2004-06-07 Ｎｅｃマイクロシステム株式会社 半導体集積回路
JP4295370B2 (ja) * 1998-07-02 2009-07-15 Ｏｋｉセミコンダクタ株式会社 半導体素子
US6265756B1 (en) * 1999-04-19 2001-07-24 Triquint Semiconductor, Inc. Electrostatic discharge protection device
US6587320B1 (en) 2000-01-04 2003-07-01 Sarnoff Corporation Apparatus for current ballasting ESD sensitive devices
US6552406B1 (en) 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
US6465870B2 (en) * 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
US6678133B2 (en) * 2001-03-09 2004-01-13 Micron Technology, Inc. Electrostatic discharge protection with input impedance
DE10209069B4 (de) * 2002-02-28 2008-12-04 IHP GmbH - Innovations for High Performance Microelectronics/ Institut für innovative Mikroelektronik GmbH Spannungsbegrenzungselement für hochintegrierte Schaltungen
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
JP4993941B2 (ja) * 2006-04-27 2012-08-08 パナソニック株式会社 半導体集積回路及びこれを備えたシステムｌｓｉ
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits

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JPH0691196B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置
FR2598852B1 (fr) * 1986-05-16 1988-10-21 Eurotechnique Sa Dispositif de protection d'entree pour circuits integres en technologie cmos.
US4822749A (en) * 1987-08-27 1989-04-18 North American Philips Corporation, Signetics Division Self-aligned metallization for semiconductor device and process using selectively deposited tungsten
US4977537A (en) 1988-09-23 1990-12-11 Dallas Semiconductor Corporation Dram nonvolatizer
US5304502A (en) * 1988-11-08 1994-04-19 Yamaha Corporation Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor
US5079441A (en) 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
US5051860A (en) * 1989-05-12 1991-09-24 Western Digital Corporation Electro-static discharge protection circuit with bimodal resistance characteristics
US5066999A (en) * 1989-10-23 1991-11-19 Micron Technology, Inc. Resistor under wirebond pad
US5227327A (en) 1989-11-10 1993-07-13 Seiko Epson Corporation Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits
US5283449A (en) * 1990-08-09 1994-02-01 Nec Corporation Semiconductor integrated circuit device including two types of MOSFETS having source/drain region different in sheet resistance from each other
US5148056A (en) 1991-03-27 1992-09-15 Mos Electronics Corp. Output buffer circuit
US5274276A (en) 1992-06-26 1993-12-28 Micron Technology, Inc. Output driver circuit comprising a programmable circuit for determining the potential at the output node and the method of implementing the circuit
JP3013624B2 (ja) * 1992-09-01 2000-02-28 日本電気株式会社 半導体集積回路装置
US5838033A (en) * 1993-09-08 1998-11-17 Lucent Technologies Inc. Integrated circuit with gate conductor defined resistor
DE4423591C2 (de) * 1994-07-06 1996-08-29 Itt Ind Gmbh Deutsche Schutzstruktur für integrierte Schaltungen
US5440162A (en) * 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5517049A (en) * 1994-09-30 1996-05-14 Vlsi Technology, Inc. CMOS output buffer with enhanced ESD resistance
US5576557A (en) * 1995-04-14 1996-11-19 United Microelectronics Corp. Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
US5682047A (en) * 1995-06-07 1997-10-28 Lsi Logic Corporation Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection
JPH0936357A (ja) 1995-07-18 1997-02-07 Matsushita Electric Ind Co Ltd 半導体装置
US5654860A (en) * 1995-08-16 1997-08-05 Micron Technology, Inc. Well resistor for ESD protection of CMOS circuits
ATE213360T1 (de) * 1995-11-30 2002-02-15 Micron Technology Inc Esd-schutzstruktur für halbleiterchips
KR100190008B1 (ko) 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5637902A (en) * 1996-01-16 1997-06-10 Vlsi Technology, Inc. N-well resistor as a ballast resistor for output MOSFET
US5744839A (en) * 1996-06-11 1998-04-28 Micron Technology, Inc. ESD protection using selective siliciding techniques
US5763919A (en) * 1996-07-08 1998-06-09 Winbond Electronics Corporation MOS transistor structure for electro-static discharge protection circuitry having dispersed parallel paths
JPH1070266A (ja) * 1996-08-26 1998-03-10 Nec Corp 半導体装置およびその製造方法
JP3169844B2 (ja) * 1996-12-11 2001-05-28 日本電気株式会社 半導体装置
TW423160B (en) 1997-04-03 2001-02-21 Winbond Electronics Corp Lateral silicon controlled rectifier for electrostatic discharge protection
US5910673A (en) 1997-12-04 1999-06-08 Sharp Microelectronics Technology, Inc. Locos MOS device for ESD protection
US5929493A (en) * 1998-03-31 1999-07-27 Texas Instruments--Acer Incorporated CMOS transistors with self-aligned planarization twin-well by using fewer mask counts
US6211001B1 (en) * 1998-07-24 2001-04-03 Sharp Laboratories Of America, Inc. Electrostatic discharge protection for salicided devices and method of making same
US6184557B1 (en) * 1999-01-28 2001-02-06 National Semiconductor Corporation I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protection

Also Published As

Publication number Publication date
US6586290B1 (en) 2003-07-01
EP0864176B1 (de) 2002-02-13
WO1997020348A1 (en) 1997-06-05
US5767552A (en) 1998-06-16
JP3232335B2 (ja) 2001-11-26
KR100298819B1 (ko) 2001-11-02
EP0864176A1 (de) 1998-09-16
JPH11504766A (ja) 1999-04-27
DE69619265T2 (de) 2002-10-24
AU1123597A (en) 1997-06-19
DE69619265D1 (de) 2002-03-21
KR19990071816A (ko) 1999-09-27

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties