ATE129362T1 - Gehäuse für in plastik eingebettete integrierte schaltungen und herstellungsverfahren. - Google Patents
Gehäuse für in plastik eingebettete integrierte schaltungen und herstellungsverfahren.Info
- Publication number
- ATE129362T1 ATE129362T1 AT90308089T AT90308089T ATE129362T1 AT E129362 T1 ATE129362 T1 AT E129362T1 AT 90308089 T AT90308089 T AT 90308089T AT 90308089 T AT90308089 T AT 90308089T AT E129362 T1 ATE129362 T1 AT E129362T1
- Authority
- AT
- Austria
- Prior art keywords
- lead frame
- assembly
- ground plane
- bonded
- die
- Prior art date
Links
- 239000004033 plastic Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002131 composite material Substances 0.000 abstract 3
- 239000004593 Epoxy Substances 0.000 abstract 2
- 239000003822 epoxy resin Substances 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 229920000647 polyepoxide Polymers 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229920006332 epoxy adhesive Polymers 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49527—Additional leads the additional leads being a multilayer
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01079—Gold [Au]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/30—Technical effects
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- H01L2924/30107—Inductance
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- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/415,844 US5068708A (en) | 1989-10-02 | 1989-10-02 | Ground plane for plastic encapsulated integrated circuit die packages |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE129362T1 true ATE129362T1 (de) | 1995-11-15 |
Family
ID=23647438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT90308089T ATE129362T1 (de) | 1989-10-02 | 1990-07-24 | Gehäuse für in plastik eingebettete integrierte schaltungen und herstellungsverfahren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5068708A (de) |
EP (1) | EP0421579B1 (de) |
JP (1) | JP2704213B2 (de) |
AT (1) | ATE129362T1 (de) |
DE (1) | DE69023091T2 (de) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5237205A (en) * | 1989-10-02 | 1993-08-17 | Advanced Micro Devices, Inc. | Ground plane for plastic encapsulated integrated circuit die packages |
US5559369A (en) * | 1989-10-02 | 1996-09-24 | Advanced Micro Devices, Inc. | Ground plane for plastic encapsulated integrated circuit die packages |
JPH03211757A (ja) * | 1989-12-21 | 1991-09-17 | General Electric Co <Ge> | 気密封じの物体 |
DE4012180C1 (de) * | 1990-04-14 | 1991-08-01 | Robert Bosch Gmbh, 7000 Stuttgart, De | |
JP2875076B2 (ja) * | 1990-11-29 | 1999-03-24 | 三井化学株式会社 | フレキシブル配線基板 |
JP2501953B2 (ja) * | 1991-01-18 | 1996-05-29 | 株式会社東芝 | 半導体装置 |
US6111308A (en) * | 1991-06-05 | 2000-08-29 | Advanced Micro Devices, Inc. | Ground plane for plastic encapsulated integrated circuit die packages |
US5455454A (en) * | 1992-03-28 | 1995-10-03 | Samsung Electronics Co., Ltd. | Semiconductor lead frame having a down set support member formed by inwardly extending leads within a central aperture |
JP2586324Y2 (ja) * | 1992-03-31 | 1998-12-02 | 株式会社ヒロテック | 金型交換装置 |
JP2571754Y2 (ja) * | 1992-04-14 | 1998-05-18 | 株式会社ヒロテック | 把持具交換装置 |
JPH0653277A (ja) * | 1992-06-04 | 1994-02-25 | Lsi Logic Corp | 半導体装置アセンブリおよびその組立方法 |
TW238419B (de) * | 1992-08-21 | 1995-01-11 | Olin Corp | |
US5317107A (en) * | 1992-09-24 | 1994-05-31 | Motorola, Inc. | Shielded stripline configuration semiconductor device and method for making the same |
US5457340A (en) * | 1992-12-07 | 1995-10-10 | Integrated Device Technology, Inc. | Leadframe with power and ground planes |
US6205654B1 (en) | 1992-12-11 | 2001-03-27 | Staktek Group L.P. | Method of manufacturing a surface mount package |
US5441918A (en) * | 1993-01-29 | 1995-08-15 | Lsi Logic Corporation | Method of making integrated circuit die package |
US5438277A (en) * | 1993-03-19 | 1995-08-01 | Advanced Micro Devices, Inc. | Ground bounce isolated output buffer |
JP2861725B2 (ja) * | 1993-04-07 | 1999-02-24 | 住友金属鉱山株式会社 | 半導体装置及びそのリードフレーム |
US5294826A (en) * | 1993-04-16 | 1994-03-15 | Northern Telecom Limited | Integrated circuit package and assembly thereof for thermal and EMI management |
US5343074A (en) * | 1993-10-04 | 1994-08-30 | Motorola, Inc. | Semiconductor device having voltage distribution ring(s) and method for making the same |
US5360942A (en) * | 1993-11-16 | 1994-11-01 | Olin Corporation | Multi-chip electronic package module utilizing an adhesive sheet |
US5448020A (en) * | 1993-12-17 | 1995-09-05 | Pendse; Rajendra D. | System and method for forming a controlled impedance flex circuit |
JPH07288385A (ja) * | 1994-04-19 | 1995-10-31 | Hitachi Chem Co Ltd | 多層配線板及びその製造法 |
SG59997A1 (en) * | 1995-06-07 | 1999-02-22 | Ibm | Apparatus and process for improved die adhesion to organic chip carries |
DE19637285B4 (de) * | 1995-09-19 | 2004-08-26 | National Semiconductor Corp.(N.D.Ges.D.Staates Delaware), Santa Clara | Halbleiterbauelement und Verfahren zum Zusammenbau hiervon |
US5691567A (en) | 1995-09-19 | 1997-11-25 | National Semiconductor Corporation | Structure for attaching a lead frame to a heat spreader/heat slug structure |
US6054754A (en) | 1997-06-06 | 2000-04-25 | Micron Technology, Inc. | Multi-capacitance lead frame decoupling device |
US5936837A (en) * | 1997-08-11 | 1999-08-10 | Motorola, Inc. | Semiconductor component having leadframe with offset ground plane |
US5982027A (en) * | 1997-12-10 | 1999-11-09 | Micron Technology, Inc. | Integrated circuit interposer with power and ground planes |
US20040055152A1 (en) * | 1999-01-05 | 2004-03-25 | James Fraivillig | Bonding of a multi-layer circuit to a heat sink |
US6323060B1 (en) | 1999-05-05 | 2001-11-27 | Dense-Pac Microsystems, Inc. | Stackable flex circuit IC package and method of making same |
US6627517B1 (en) * | 1999-12-08 | 2003-09-30 | Altera Corporation | Semiconductor package with improved thermal cycling performance, and method of forming same |
US6262895B1 (en) | 2000-01-13 | 2001-07-17 | John A. Forthun | Stackable chip package with flex carrier |
US6608763B1 (en) | 2000-09-15 | 2003-08-19 | Staktek Group L.P. | Stacking system and method |
JP2002134674A (ja) * | 2000-10-20 | 2002-05-10 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6462408B1 (en) | 2001-03-27 | 2002-10-08 | Staktek Group, L.P. | Contact member stacking system and method |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US7053478B2 (en) | 2001-10-26 | 2006-05-30 | Staktek Group L.P. | Pitch change and chip scale stacking system |
US7371609B2 (en) | 2001-10-26 | 2008-05-13 | Staktek Group L.P. | Stacked module systems and methods |
US7656678B2 (en) | 2001-10-26 | 2010-02-02 | Entorian Technologies, Lp | Stacked module systems |
US7310458B2 (en) | 2001-10-26 | 2007-12-18 | Staktek Group L.P. | Stacked module systems and methods |
US6940729B2 (en) | 2001-10-26 | 2005-09-06 | Staktek Group L.P. | Integrated circuit stacking system and method |
US6956284B2 (en) | 2001-10-26 | 2005-10-18 | Staktek Group L.P. | Integrated circuit stacking system and method |
US7202555B2 (en) | 2001-10-26 | 2007-04-10 | Staktek Group L.P. | Pitch change and chip scale stacking system and method |
US20060255446A1 (en) | 2001-10-26 | 2006-11-16 | Staktek Group, L.P. | Stacked modules and method |
US20030234443A1 (en) | 2001-10-26 | 2003-12-25 | Staktek Group, L.P. | Low profile stacking system and method |
US7026708B2 (en) | 2001-10-26 | 2006-04-11 | Staktek Group L.P. | Low profile chip scale stacking system and method |
US7485951B2 (en) | 2001-10-26 | 2009-02-03 | Entorian Technologies, Lp | Modularized die stacking system and method |
US6914324B2 (en) | 2001-10-26 | 2005-07-05 | Staktek Group L.P. | Memory expansion and chip scale stacking system and method |
GB2385984B (en) * | 2001-11-07 | 2006-06-28 | Micron Technology Inc | Semiconductor package assembly and method for electrically isolating modules |
US7081373B2 (en) | 2001-12-14 | 2006-07-25 | Staktek Group, L.P. | CSP chip stack with flex circuit |
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US7033861B1 (en) | 2005-05-18 | 2006-04-25 | Staktek Group L.P. | Stacked module systems and method |
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CN101869006A (zh) * | 2007-12-04 | 2010-10-20 | E.I.内穆尔杜邦公司 | 用于led安装与互连的可弯曲电路结构 |
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US4147889A (en) * | 1978-02-28 | 1979-04-03 | Amp Incorporated | Chip carrier |
JPS5662349A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Semiconductor device |
GB2097998B (en) * | 1981-05-06 | 1985-05-30 | Standard Telephones Cables Ltd | Mounting of integrated circuits |
US4446477A (en) * | 1981-08-21 | 1984-05-01 | Sperry Corporation | Multichip thin film module |
US4480262A (en) * | 1982-07-15 | 1984-10-30 | Olin Corporation | Semiconductor casing |
JPS59207646A (ja) * | 1983-05-11 | 1984-11-24 | Toshiba Corp | 半導体装置およびリ−ドフレ−ム |
JPS59207645A (ja) * | 1983-05-11 | 1984-11-24 | Toshiba Corp | 半導体装置およびリ−ドフレ−ム |
US4680613A (en) * | 1983-12-01 | 1987-07-14 | Fairchild Semiconductor Corporation | Low impedance package for integrated circuit die |
JPS63148670A (ja) * | 1986-12-12 | 1988-06-21 | Texas Instr Japan Ltd | リ−ドフレ−ム材 |
JPS63124759U (de) * | 1987-02-09 | 1988-08-15 | ||
JP2754534B2 (ja) * | 1987-02-09 | 1998-05-20 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
US4783428A (en) * | 1987-11-23 | 1988-11-08 | Motorola Inc. | Method of producing a thermogenetic semiconductor device |
-
1989
- 1989-10-02 US US07/415,844 patent/US5068708A/en not_active Expired - Lifetime
-
1990
- 1990-07-24 EP EP90308089A patent/EP0421579B1/de not_active Expired - Lifetime
- 1990-07-24 AT AT90308089T patent/ATE129362T1/de not_active IP Right Cessation
- 1990-07-24 DE DE69023091T patent/DE69023091T2/de not_active Expired - Lifetime
- 1990-08-17 JP JP2217995A patent/JP2704213B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0421579B1 (de) | 1995-10-18 |
EP0421579A3 (en) | 1991-10-23 |
DE69023091T2 (de) | 1996-05-15 |
JP2704213B2 (ja) | 1998-01-26 |
DE69023091D1 (de) | 1995-11-23 |
US5068708A (en) | 1991-11-26 |
EP0421579A2 (de) | 1991-04-10 |
JPH03126233A (ja) | 1991-05-29 |
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