AT376845B - Speicher-feldeffekttransistor - Google Patents

Speicher-feldeffekttransistor

Info

Publication number
AT376845B
AT376845B AT0629275A AT629275A AT376845B AT 376845 B AT376845 B AT 376845B AT 0629275 A AT0629275 A AT 0629275A AT 629275 A AT629275 A AT 629275A AT 376845 B AT376845 B AT 376845B
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
memory field
memory
transistor
Prior art date
Application number
AT0629275A
Other languages
German (de)
English (en)
Other versions
ATA629275A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA629275A publication Critical patent/ATA629275A/de
Application granted granted Critical
Publication of AT376845B publication Critical patent/AT376845B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
AT0629275A 1974-09-20 1975-08-13 Speicher-feldeffekttransistor AT376845B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (de) 1974-09-20 1974-09-20 Speicher-Feldeffekttransistor

Publications (2)

Publication Number Publication Date
ATA629275A ATA629275A (de) 1984-05-15
AT376845B true AT376845B (de) 1985-01-10

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0629275A AT376845B (de) 1974-09-20 1975-08-13 Speicher-feldeffekttransistor

Country Status (10)

Country Link
JP (1) JPS5528554B2 (enrdf_load_stackoverflow)
AT (1) AT376845B (enrdf_load_stackoverflow)
BE (1) BE833632A (enrdf_load_stackoverflow)
CH (1) CH591763A5 (enrdf_load_stackoverflow)
DK (1) DK141545C (enrdf_load_stackoverflow)
FR (1) FR2285719A1 (enrdf_load_stackoverflow)
GB (1) GB1483555A (enrdf_load_stackoverflow)
IT (1) IT1042654B (enrdf_load_stackoverflow)
NL (1) NL163373C (enrdf_load_stackoverflow)
SE (1) SE402186B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5887877A (ja) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd 半導体不揮発性メモリ
JPH06252392A (ja) * 1993-03-01 1994-09-09 Nec Corp 電界効果トランジスタ
KR0149571B1 (ko) * 1995-05-04 1998-10-01 김주용 반도체 소자의 트랜지스터 구조
JP2016006894A (ja) * 2015-08-03 2016-01-14 スパンション エルエルシー 半導体装置およびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419766A (en) * 1963-06-24 1968-12-31 Hitachi Ltd Method of producing insulated gate field effect transistors with improved characteristics
DE2126303A1 (de) * 1970-06-01 1971-12-16 Rca Corp Eine isolierte Gate-Elektrode aufweisender Feldeffekt-Transistor mit veränderlicher Verstärkung
DE2129181A1 (de) * 1970-06-15 1971-12-23 Intel Corp Festkörper-Speichervorrichtung mit schwebender Gate-Elektrode
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
DE2201150A1 (de) * 1971-01-14 1972-08-10 Rca Corp Ladungsgekoppelte Halbleiterschaltung
DE2341822A1 (de) * 1972-09-07 1974-03-14 Philips Nv Digitales schieberegister

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419766A (en) * 1963-06-24 1968-12-31 Hitachi Ltd Method of producing insulated gate field effect transistors with improved characteristics
DE2126303A1 (de) * 1970-06-01 1971-12-16 Rca Corp Eine isolierte Gate-Elektrode aufweisender Feldeffekt-Transistor mit veränderlicher Verstärkung
DE2129181A1 (de) * 1970-06-15 1971-12-23 Intel Corp Festkörper-Speichervorrichtung mit schwebender Gate-Elektrode
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
DE2201150A1 (de) * 1971-01-14 1972-08-10 Rca Corp Ladungsgekoppelte Halbleiterschaltung
DE2341822A1 (de) * 1972-09-07 1974-03-14 Philips Nv Digitales schieberegister

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL SC-7, NR.5, OKT. 1972, S.369-375. *
PROCEEDINGS OF THE 4TH CONFERENCE ON SOLID STATE DEVICES, TOKIO, 1972, SUPPLEMENT TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS, VOL. 42. 1973, S.158-166 *
SOLID STATE ELECTRONICS, VOL.16, 1973, S.483-490. *

Also Published As

Publication number Publication date
DK141545C (da) 1980-09-29
JPS5157291A (enrdf_load_stackoverflow) 1976-05-19
SE402186B (sv) 1978-06-19
ATA629275A (de) 1984-05-15
FR2285719B1 (enrdf_load_stackoverflow) 1979-03-23
IT1042654B (it) 1980-01-30
SE7510483L (sv) 1976-03-22
GB1483555A (en) 1977-08-24
CH591763A5 (enrdf_load_stackoverflow) 1977-09-30
DK423275A (da) 1976-03-21
NL7510942A (nl) 1976-03-23
FR2285719A1 (fr) 1976-04-16
DK141545B (da) 1980-04-14
JPS5528554B2 (enrdf_load_stackoverflow) 1980-07-29
NL163373C (nl) 1980-08-15
BE833632A (fr) 1976-03-19

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee