SE402186B - Fet-element med atminstone ett styre, nemligen ett av en isolator helt omgivet flytande minnesstyre - Google Patents

Fet-element med atminstone ett styre, nemligen ett av en isolator helt omgivet flytande minnesstyre

Info

Publication number
SE402186B
SE402186B SE7510483A SE7510483A SE402186B SE 402186 B SE402186 B SE 402186B SE 7510483 A SE7510483 A SE 7510483A SE 7510483 A SE7510483 A SE 7510483A SE 402186 B SE402186 B SE 402186B
Authority
SE
Sweden
Prior art keywords
board
atminstone
namely
completely surrounded
floating memory
Prior art date
Application number
SE7510483A
Other languages
English (en)
Swedish (sv)
Other versions
SE7510483L (sv
Inventor
B Rossler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7510483L publication Critical patent/SE7510483L/xx
Publication of SE402186B publication Critical patent/SE402186B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
SE7510483A 1974-09-20 1975-09-18 Fet-element med atminstone ett styre, nemligen ett av en isolator helt omgivet flytande minnesstyre SE402186B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (de) 1974-09-20 1974-09-20 Speicher-Feldeffekttransistor

Publications (2)

Publication Number Publication Date
SE7510483L SE7510483L (sv) 1976-03-22
SE402186B true SE402186B (sv) 1978-06-19

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510483A SE402186B (sv) 1974-09-20 1975-09-18 Fet-element med atminstone ett styre, nemligen ett av en isolator helt omgivet flytande minnesstyre

Country Status (10)

Country Link
JP (1) JPS5528554B2 (enrdf_load_stackoverflow)
AT (1) AT376845B (enrdf_load_stackoverflow)
BE (1) BE833632A (enrdf_load_stackoverflow)
CH (1) CH591763A5 (enrdf_load_stackoverflow)
DK (1) DK141545C (enrdf_load_stackoverflow)
FR (1) FR2285719A1 (enrdf_load_stackoverflow)
GB (1) GB1483555A (enrdf_load_stackoverflow)
IT (1) IT1042654B (enrdf_load_stackoverflow)
NL (1) NL163373C (enrdf_load_stackoverflow)
SE (1) SE402186B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5887877A (ja) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd 半導体不揮発性メモリ
JPH06252392A (ja) * 1993-03-01 1994-09-09 Nec Corp 電界効果トランジスタ
KR0149571B1 (ko) * 1995-05-04 1998-10-01 김주용 반도체 소자의 트랜지스터 구조
JP2016006894A (ja) * 2015-08-03 2016-01-14 スパンション エルエルシー 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1071383A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Field-effect semiconductor devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL7212151A (enrdf_load_stackoverflow) * 1972-09-07 1974-03-11

Also Published As

Publication number Publication date
DK423275A (da) 1976-03-21
NL7510942A (nl) 1976-03-23
GB1483555A (en) 1977-08-24
JPS5157291A (enrdf_load_stackoverflow) 1976-05-19
BE833632A (fr) 1976-03-19
DK141545B (da) 1980-04-14
DK141545C (da) 1980-09-29
SE7510483L (sv) 1976-03-22
CH591763A5 (enrdf_load_stackoverflow) 1977-09-30
JPS5528554B2 (enrdf_load_stackoverflow) 1980-07-29
NL163373C (nl) 1980-08-15
ATA629275A (de) 1984-05-15
FR2285719B1 (enrdf_load_stackoverflow) 1979-03-23
FR2285719A1 (fr) 1976-04-16
AT376845B (de) 1985-01-10
IT1042654B (it) 1980-01-30

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