DK141545C - Programmerbar lagerfelteffekttransistor med svaevende isoleretstyreelektrode - Google Patents
Programmerbar lagerfelteffekttransistor med svaevende isoleretstyreelektrodeInfo
- Publication number
- DK141545C DK141545C DK423275A DK423275A DK141545C DK 141545 C DK141545 C DK 141545C DK 423275 A DK423275 A DK 423275A DK 423275 A DK423275 A DK 423275A DK 141545 C DK141545 C DK 141545C
- Authority
- DK
- Denmark
- Prior art keywords
- stockfield
- programmable
- effect transistor
- control electrode
- isolated control
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2445079A DE2445079C3 (de) | 1974-09-20 | 1974-09-20 | Speicher-Feldeffekttransistor |
| DE2445079 | 1974-09-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK423275A DK423275A (da) | 1976-03-21 |
| DK141545B DK141545B (da) | 1980-04-14 |
| DK141545C true DK141545C (da) | 1980-09-29 |
Family
ID=5926358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK423275A DK141545C (da) | 1974-09-20 | 1975-09-19 | Programmerbar lagerfelteffekttransistor med svaevende isoleretstyreelektrode |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5528554B2 (enrdf_load_stackoverflow) |
| AT (1) | AT376845B (enrdf_load_stackoverflow) |
| BE (1) | BE833632A (enrdf_load_stackoverflow) |
| CH (1) | CH591763A5 (enrdf_load_stackoverflow) |
| DK (1) | DK141545C (enrdf_load_stackoverflow) |
| FR (1) | FR2285719A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1483555A (enrdf_load_stackoverflow) |
| IT (1) | IT1042654B (enrdf_load_stackoverflow) |
| NL (1) | NL163373C (enrdf_load_stackoverflow) |
| SE (1) | SE402186B (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
| JPS5887877A (ja) * | 1981-11-19 | 1983-05-25 | Sanyo Electric Co Ltd | 半導体不揮発性メモリ |
| JPH06252392A (ja) * | 1993-03-01 | 1994-09-09 | Nec Corp | 電界効果トランジスタ |
| KR0149571B1 (ko) * | 1995-05-04 | 1998-10-01 | 김주용 | 반도체 소자의 트랜지스터 구조 |
| JP2016006894A (ja) * | 2015-08-03 | 2016-01-14 | スパンション エルエルシー | 半導体装置およびその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1071383A (en) * | 1963-06-24 | 1967-06-07 | Hitachi Ltd | Field-effect semiconductor devices |
| US3745426A (en) * | 1970-06-01 | 1973-07-10 | Rca Corp | Insulated gate field-effect transistor with variable gain |
| US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| NL7212151A (enrdf_load_stackoverflow) * | 1972-09-07 | 1974-03-11 |
-
1975
- 1975-08-13 AT AT0629275A patent/AT376845B/de not_active IP Right Cessation
- 1975-08-22 GB GB34866/75A patent/GB1483555A/en not_active Expired
- 1975-09-16 FR FR7528362A patent/FR2285719A1/fr active Granted
- 1975-09-16 CH CH1198175A patent/CH591763A5/xx not_active IP Right Cessation
- 1975-09-17 NL NL7510942.A patent/NL163373C/xx not_active IP Right Cessation
- 1975-09-18 IT IT27369/75A patent/IT1042654B/it active
- 1975-09-18 SE SE7510483A patent/SE402186B/xx not_active IP Right Cessation
- 1975-09-19 BE BE160217A patent/BE833632A/xx not_active IP Right Cessation
- 1975-09-19 JP JP11352375A patent/JPS5528554B2/ja not_active Expired
- 1975-09-19 DK DK423275A patent/DK141545C/da not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DK423275A (da) | 1976-03-21 |
| NL7510942A (nl) | 1976-03-23 |
| GB1483555A (en) | 1977-08-24 |
| JPS5157291A (enrdf_load_stackoverflow) | 1976-05-19 |
| BE833632A (fr) | 1976-03-19 |
| DK141545B (da) | 1980-04-14 |
| SE7510483L (sv) | 1976-03-22 |
| CH591763A5 (enrdf_load_stackoverflow) | 1977-09-30 |
| JPS5528554B2 (enrdf_load_stackoverflow) | 1980-07-29 |
| NL163373C (nl) | 1980-08-15 |
| ATA629275A (de) | 1984-05-15 |
| FR2285719B1 (enrdf_load_stackoverflow) | 1979-03-23 |
| FR2285719A1 (fr) | 1976-04-16 |
| AT376845B (de) | 1985-01-10 |
| IT1042654B (it) | 1980-01-30 |
| SE402186B (sv) | 1978-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PBP | Patent lapsed |